2N5849 (SILICON)

40W-50 MHz
RF POWER
NPN SILICON RF POWER TRANSISTOR TRANSISTOR
NPN SILICON

· .. designed primarily for use in large·signal amplifier output stages,

the 2N5849 is intended for use in industrial communications equip·
ment operating at frequencies to 80 MHz.

• Optimized for Operation from a 12.5 Volt Supply

• 40 Watts (Min) RF Power Output at 50 MHz
• Balanced Emitter Construction for Burn Out Protection

'MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 24 Vdc
Collector-Base Voltage VCB 4B Vdc MILLIMETERS INCHES
DIM MIN MAX MIN MAX
Emitter-Base Voltage VEB 4.0 Vdc
A 12.57 12.90 0.459 0.508
Collector Current Continuous IC 7.0 Adc 10.54 10.80 0.415 0.425
8
Total Device Dissipation @TC - 25°C PD 100 Watts C 21.21 21.46 0.835 0.845
Derate above 25°C 571 mW/oC 0 5.59 5.84 0.220 0.230
E 1.83 1.98 0.072 0.078
Storage Temperature Range T stg -65 to +200 °c F 2.79 2.92 0.110 0.115
H 26.42 28.70 1.040 1.130
J 0.10 0.15 0.004 0.006
-Indicates JEDEC Registered Data. K 13.21 14.35 0.520 0.565
This device IS designed for RF operation. The total device dissipation rating applies L 1.65 1.90 0.065 0.D75
onlv when the device is operated as an RF amplifier. M 45 NOM
0 45 0 NOM
P 1.27 0.050
A 9.78 10.01 0.385 0.394
S 3.89 4.45 0.153 0.175
T 2.03 2.29 0.080 0.090
U 2.54 3.30 0.100 0.130
NOTE: 145A·02 USES 10·32NF2ASTUO.
CASE 145A-02

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2N5849 (continued)

*ELECTRICAL CHARACTERISTICS (TC ~ 250C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l) BVCEO 24 - - Vde
(lC = 200 mAde, IB = 0)

Collector-Emitter Breakdown Voltage(l)

(lC = 100 mAde, VBE = 0)
BVCES 48 - - Vde

Emitter-Base Breakdown Voltage BVEBO 4.0 - - Vde

(Ie = 10 mAde,lc = 0)

Collector Cutoff Current ICES - - 10 mAde

(VCE = 15 Vde, VBE = 0, T A = +1250 C)
Collector Cutoff Current ICBO - - 1.0 mAde
(VCB = 15 Vde, IE = 0)

ON CHARACTERISTICS
DC Current Gain
(I C = 2.4 Ade, V CE = 5.0 Vde)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 12.5 Vde, IE = 0, f = 0.1 to 1.0 MHz)

FUNCTIONAL TEST
Common-Emitter Amplifier Power Gain GpE 7.5 - - dB
(Pout = 40 W, VCC = 12.5 Vde, f = 50 MHz)

Collector Efficiency 1] 50 - - %
(Pout = 40 W, VCC = 12.5 Vde, f = 50 MHz)

·'ndicates JEDEC Registered Data.

(1)Pulsed thru a 25 mH Inductor.

FIGURE 1 - 50 MHz POWER GAIN TEST CIRCUIT

Vee

+
1.° T
"F
t1
L3
0PF
Cl
C2
C3
25·280 pF, Area 464 or Equivalent
80·480 pF, Area 466 or Equivalent
0-75 pF, Hammarlund MAPC 75 or Equivalent
C4 0-50 pF, Hammarlund MAPC 50 or Equivalent
e4 L1 lTurn #14 AWG 5/1S" I.D.
L2 2-1/2 Turns #22 AWG on 3/8" Ferrite Bead
L3 18 Turns #18 AWG 3/8"1.0. 2 Layers, 9 Turns Each
L4 4Turns#14AWG 711S"I.D.7/1S" Long

2-298
2N5849 (continued)

FIGURE 2 - POWER OUTPUT versus POWER INPUT FIGURE 3 - POWER OUTPUT versus FREQUENCY

60 60
f = 50 MHz Vcc = 12.5 Vdc
Vcc = 12.5 Vdc 50
50
~
~
f-

'"
~ 40
<r

V ~
- f-

~ '"
<r
;0:
40

30

~ 30 ~ 25 r - - - - i 1 . 0 w~--7'i:'--=76-+--=/-I-=:>k,----I
~ ~
i= // ~
20
5 20
5
0': 10 I ; 15

I
o 10~25'-----~3~0---~~--~'----~-~~-~
o 1.0 2.0 3.0 4.0 5.0 6.0 7.0 B.O

Pin, INPUT POWER (WATTS) f, FREQUENCY (MHz)

FIGURE 4 - PARALLEL EQUIVALENT INPUT FIGURE 5 - PARALLEL EQUIVALENT INPUT

RESISTANCE versus FREQUENCY CAPACITANCE versus FREQUENCY

5.0 3000
Vcc =12.5 Vdc VCC = 12.5 Vdc

---....
--- -
2500
4.0
'"~
S
'\.. ~ 2000
w .........
w
'-' 3.0
z
"- ~
;::U
1500
...... ......... ~out=20W
'in"
~
""'- I'... Pout =20 W
:::5
1000

500
40W ...............
~
~ ............
2.0
~ I-
"' -...........
~ ............ "-...
I - - - ~ t--
~

'"
1.0
- -I--
J
-1000
-500
...........
-1500
25 30 35 40 50 60 70 BO 25 30 35 40 50 60 70 BO
f, FREQUENCY (MHz) f, FREQUENCY (MHz)

FIGURE 6 - PARALLEL EQUIVALENT OUTPUT

CAPACITANCE versus FREQUENCY FIGURE 7 - DC SAFE OPERATING AREA
1000 10
Vcc = 12.5 Vdc -TC - 25°C
900 7.0
~
~
0:
w
'"
~
Ie Max
"'
'-'
z
'"e;
BOO
............
~
5.0
"'
-----
f-
........
~:.
700
~
::>
'-'

- -- -
<r 3.0
f- 600
r--
0
::>
i=
::>
0 500
--!:W.
~8 2.0
j :3
400
BVCEO Min
300 1.0
25 30 35 40 50 60 70 BO 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
f, FREQUENCY (MHz) VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)

2-299
2N5849 (continued)

40 WATT. 50 MHz TRANSMITTER SCHEMATIC

(Information obtained from AN-502Aj

,--4>-------.-------.,....----,..-----.-----.--0 +12.5 Vdc

0.005pF 1 15 pF

20 pF
2N5847
2N4073 170·780
IOn
9-180pF
I RFC
VK200'
pF
1I2W

-= -=

P.=40W * Ferroxcube Part Number

Pin = 20 mW RFCI - 20 Turns #18 AWG, 3/16" 1.0., 2 Layers,
Overall Gain = 33 dB 10 Turns Each, Close Wound.
Overall Efficiency = 59.2% RFC2 - 18 Turns, #18 AWG, 3/16" 1.0., 2 Layers,
9 Turns Each. Close Wound.

APPLICATION INFORMATION

In addition to a fine selection of quality AF Semiconductors.

Motorola provides applications information in the form of Appli~
cation Notes. Any of the notes listed on this page may be obtained
by writing to the Technical Information Center, Motorola Semi~
conductor Products Inc., P.O. Box 20924. Phoenix, Arizona 85036.
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Solutions
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AN-481 A Broadband 4-Watt Aircraft Transmitter

AN-495 A 25-Watt.175-MHz Transmitterfor 12.5-Volt
Operation
AN-502A A 40-Watt, 50-MHz Transmitter for 12.5-Volt
Operation
AN-507 A 13-Watt Broadband AM Aircraft Transmitter

2-300