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Comprehensive Exam

This document contains a 10 question comprehensive exam on electrical sciences for a semester 2 exam at BITS Pilani KK Birla Goa Campus. The questions cover topics like RLC circuits, mesh analysis, diode models, semiconductor properties, transistor biasing circuits, common emitter amplifiers, and determining component values in transistor amplifier circuits. Students are instructed to show working, highlight final answers, and include identifying information on exam pages. Questions involve calculating resonant frequency, half-power frequencies, power dissipation, mesh currents, load voltages/currents with different diode models, material properties, bias point values, voltage/current gains, input/output resistances, and determining resistor values to set bias points.

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Monit Agrawal
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78 views4 pages

Comprehensive Exam

This document contains a 10 question comprehensive exam on electrical sciences for a semester 2 exam at BITS Pilani KK Birla Goa Campus. The questions cover topics like RLC circuits, mesh analysis, diode models, semiconductor properties, transistor biasing circuits, common emitter amplifiers, and determining component values in transistor amplifier circuits. Students are instructed to show working, highlight final answers, and include identifying information on exam pages. Questions involve calculating resonant frequency, half-power frequencies, power dissipation, mesh currents, load voltages/currents with different diode models, material properties, bias point values, voltage/current gains, input/output resistances, and determining resistor values to set bias points.

Uploaded by

Monit Agrawal
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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BITS PILANI K K BIRLA GOA CAMPUS, SEMESTER II, 2020-2021

ELECTRICAL SCIENCES EEE F111 COMPREHENSIVE EXAM


Closed Book Date: 25 June 2021
Marks: 80 Duration: 120 minutes

Instructions:
1. Numerical answers should be accurate up to 2 places after the decimal point and with appropriate units.
2. Highlight the final answers with box.
3. Mention question number, your name and ID on each page of the answer book PDF.

Q1. In the parallel RLC circuit shown in the figure below, let R = 9 kΩ, L = 0.3mH, and C = 8 μF. Calculate the following

a) Resonant frequency , Quality factor (Q), and Bandwidth (BW)


b) Half-Power frequencies and , in rad/sec.
c) Power dissipated at [8 Marks]

Q2. Find in the circuit shown in figure below using mesh analysis. [8 Marks]

Q3. Compare the load voltage and load current for the circuit below using the following diode models: (i) Ideal diode
model, (ii) Non-ideal diode model and (iii) Resistance model. [7 Marks]

Q4. Consider a Si semiconductor with intrinsic concentration of Ni = 1.5 x 1010 cm-3 doped to a concentration of ND = 8 x
1015 cm-3 at T= 300 K. Electron mobility and hole mobility are 1350 cm2/V-s and 480 cm2/V-s, respectively.

(a) Determine the hole concentration and resistivity of the material.

(b) Determine the applied electric field that will induce drift current density of 173 A/cm2. [6 Marks]
Q5. A germanium transistor with the value of VEB = 0.3 V is used in the biasing circuit given below. The transistor is
operating in active region. If the value of β varies between 50 and 200, calculate the corresponding minimum and
maximum values of emitter current. Also, calculate the corresponding minimum and maximum values of collector to
emitter voltage. [8 Marks]

Q6. The transistor used in the biasing circuit given below has a value of β =100. If the value of RB=150 kΩ, calculate the
values of IB, IC and VCE and thereby determine the region of operation of the transistor. (VBE (active) = 0.7 V,
VBE(saturation) = 0.8 V, VCE (saturation) = 0.2 V) [6 Marks]

Q7. For a Common-Emitter amplifier circuit shown in the following figure,

(a) Calculate the voltage gain Av = v0/vin, input resistance Rin, load to source current gain Ai and output resistance R0.

(b) Repeat part (a) if the emitter resistance (1 k-ohm) is split into RE1 = 100 ohm and RE2 = 900 ohm in series and the
bypass capacitor is connected in parallel to RE2 only.

For the given BJT, β = 100. From DC analysis, the operating point is found as ICQ = 4.12 mA and VCEQ = 6.72 volts. Use the
rπ-hfe small signal ac model of BJT. [12 Marks]
Q8. Determine the operating or Q-point and find the maximum peak value of the base current for the BJT to be in active
region operation. Assume the BJT current gain βDC = 200. [6 Marks]

Q9. For a BJT amplifier given below, the dynamic emitter resistance, re = 25 Ω, and the current gain of the transistor is
80. The coupling and bypass capacitors may be assumed of negligible impedance at the signal frequency. Determine
input impedance, output impedance, and voltage gain V0/Vi of the amplifier. Take VBE = 0.7 V, all resistor values are in Ω.
[10 Marks]
Q10. For a BJT amplifier shown below, determine the value of R1, R2 and RL in Ω such that the quiescent current flowing
through the transistor is 1 mA, and the collector voltages are VC1= 3 V and VC2= 6 V. Assume that  is very high and base
current is negligible. R3 = 18 K Ω, RE = 200 Ω. [9 Marks]

END

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