STTA3006P/PI

 STTA6006TV1/2

TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE

MAIN PRODUCT CHARACTERISTICS

IF(AV) 30A / 2 x 30A K2 A2 A2 K1

VRRM 600V
trr (typ) 35ns
VF (max) 1.5V K1 A1 K2 A1

FEATURES AND BENEFITS STTA6006TV1 STTA6006TV2

SPECIFICTO”FREEWHEELMODE”OPERATIONS:
FREEWHEEL OR BOOSTER DIODE
ULTRA-FAST AND SOFT RECOVERY
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR
HIGH FREQUENCY OPERATIONS
INSULATED PACKAGE : ISOTOP & DOP3I
Electrical insulation : 2500VRMS ISOTOPTM
Capacitance < 12 pF (DOP3I)
Capacitance < 45 pF (ISOTOP)
DESCRIPTION K
The TURBOSWITCH is a very high performance
series of ultra-fast high voltage power diodes from
600V to 1200V.
TURBOSWITCH family, drastically cuts losses in
both the diode and the associated switching IGBT A A
or MOSFET in all ”freewheel mode” operations K
and is particularly suitable and efficient in motor K
control freewheel applications and in boosterdiode
applications in power factor control circuitries. SOD93 DOP3I
Packaged either in ISOTOP, DOP3I or SOD93 STTA3006P STTA3006PI
these 600V devices are particularly intended for
use on 240V domestic mains.

ABSOLUTE RATINGS (limiting values, per diode)

Symbol Parameter Value Unit

VRRM Repetitive peak reverse voltage 600 V
VRSM Non repetitive peak reverse voltage 600 V
IF(RMS) RMS forward current 50 A
IFRM Repetitive peak forward current tp=5µs F=5kHz square 300 A
IFSM Surge non repetitive forward current tp=10 ms sinusoidal 230 A
Tj Maximum operating junction temperature 150 °C
T stg Storage temperature range -65 to 150 °C
TM : TURBOSWITCH is a trademark of STMicroelectronics

November 1999 - Ed: 4C 1/9

STTA6006TV1/2/ STTA3006P/PI

THERMAL AND POWER DATA (Per diode)

Symbol Parameter Test conditions Value Unit

Rth(j-c) Junction to case thermal ISOTOP Per diode 1.4 °C/W
resistance Total 0.75
DOP3I 1.8
SOD93 1.2
Rth(c) ISOTOP Coupling 0.1 °C/W
P1 Conduction power dissipation ISOTOP Tc= 74°C 54 W
IF(AV) = 30A δ =0.5 DOP3I Tc= 52°C
SOD93 Tc= 85°C
Pmax Total power dissipation ISOTOP Tc= 66°C 60 W
Pmax = P1 + P3 (P3 = 10% P1) DOP3I Tc= 42°C
SOD93 Tc= 78°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol Parameter Test conditions Min Typ Max Unit

VF * Forward voltage drop IF =30A Tj = 25°C 1.75 V
Tj = 125°C 1.25 1.5 V
IR ** Reverse leakage current VR =0.8 × Tj = 25°C 150 µA
VRRM Tj = 125°C 3 8 mA
Vto Threshold voltage Ip < 3.IAV Tj = 125°C 1.15 V
rd Dynamic resistance 11 mΩ
Test pulses : * tp = 380 µs, δ < 2%
** tp = 5 ms, δ < 2%

To evaluate the maximum conduction losses use the following equation :

P = Vto x IF(AV) + rd x IF2(RMS)

DYNAMIC ELECTRICAL CHARACTERISTICS

TURN-OFF SWITCHING
Symbol Parameter Test conditions Min Typ Max Unit
trr Reverse recovery Tj = 25°C ns
time IF = 0.5 A IR = 1A Irr = 0.25A 35
IF = 1 A dIF/dt =-50A/µs VR =30V 65
IRM Maximum reverse Tj = 125°C VR = 400V IF =30A A
recovery current dIF/dt = -240 A/µs 19
dIF/dt = -500 A/µs 20
S factor Softness factor Tj = 125°C VR = 400V IF =30A -
dIF/dt = -500 A/µs 0.40

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TURN-ON SWITCHING

Symbol Parameter Test conditions Min Typ Max Unit

t fr Forward recovery Tj = 25°C ns
time IF =30A, dIF/dt = 240 A/µs 600
measured at, 1.1 × VFmax
VFp Peak forward voltage Tj = 25°C V
IF =30A, dIF/dt = 240 A/µs 12

Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward
current.
P1(W) VFM(V)
60 3.50
T MAXIMUM VALUES
=0.1
50 3.00
2.50
40 =tp/T tp
2.00
30 Tj=125 oC
=1 1.50
=0.5
20
1.00
= 0. 2
10 0.50
IF(av)(A) IFM(A)
0 0.00
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0.1 1 10 100

Fig. 3: Relative variation of thermal transient Fig. 4: Peak reverse recovery current versus
impedance junction to case versus pulse duration. dIF/dt.
IRM(A)
45
90% CONFIDENCE Tj=125oC
40 VR=400V
35 IF=60A
30
25 I F= 30A
20
15 I F=15A

10
5
dIF/dt(A/ s)
0
0 100 200 300 400 500 600 700 800 900 1000

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Fig. 5: Reverse recovery time versus dIF/dt. Fig. 6: Softness factor (tb/ta) versus dIF/dt.

trr(ns) S factor
250 0.90
90% CONFIDENCE Tj=125 oC 0.85 Typical values Tj=125 oC
225
VR= 400V
0.80
200 0.75 IF<2xI F( av)
175 0.70 VR=400V
I F=60A
0.65
150 0.60
IF=30A
125 0.55
100 0.50
0.45
75 IF=15A 0.40
50 0.35
0.30
25 0.25
dIF/dt( A/ s) dIF/dt(A/ s)
0 0.20
0 100 200 300 400 500 600 700 800 900 1000 0 100 200 300 400 500 600 700 800 900 1000

Fig. 7: Relative variation of dynamic parameters Fig. 8: Transient peak forward voltage versus
versus junction temperature (reference Tj=125°C). dIF/dt.
VFP(V)
3.25 16
3.00 15 90% CONFIDENCE Tj=125 oC
14 IF=IF(av)
2.75 13
2.50 12
11
2.25 10
2.00 9
S factor 8
1.75 7
1.50 6
5
1.25 4
1.00 IRM 3
0.75 2
Tj(oC) 1 dIF/dt(A/ s)
0.50 0
0 25 50 75 100 125 150 0 100 200 300 400 500 600

Fig. 9: Forward recovery time versus dIF/dt.

tfr(ns)
600
550 90% CONFIDENCE Tj=125oC
500 VFr=1.1*VF max.
450 IF =IF (av)
400
350
300
250
200
150
100
50 dIF/dt(A/ s)
0
0 100 200 300 400 500 600

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APPLICATION DATA
The TURBOSWITCH is especially designed to transistor, thus optimizing the overall performance
provide the lowest overall power losses in any in the end application.
”FREEWHEEL Mode” application (Fig.A) The way of calculating the power losses is given
considering both the diode and the companion below:

TOTAL LOSSES
due to the diode
P = P1+ P2+ P3+ P4+ P5 Watts

CONDUCTION REVERSE SWITCHING SWITCHING

LOSSES LOSSES LOSSES LOSSES
in the diode in the diode in the diode in the tansistor
due to the diode

Fig. A : ”FREEWHEEL” MODE.

SWITCHING
TRANSISTOR

IL
DIODE:
TURBOSWITCH

VR
t
T

F = 1/T = t/T
LOAD

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APPLICATION DATA (Cont’d)

Fig. B: STATIC CHARACTERISTICS

Conduction losses :
I P1 = Vt0 . IF(AV) + Rd . IF2(RMS)

IF

Rd

VR
V
V tO VF
IR
Reverse losses :
P2 = VR . IR . (1 - δ)

Fig. C: TURN-OFF CHARACTERISTICS

V Turn-on losses :
IL (in the transistor, due to the diode)
TRANSISTOR
I VR × IRM 2 × ( 3 + 2 × S ) × F
P5 =
t
6 x dIF ⁄ dt
VR × IRM × IL × ( S + 2 ) × F
+
2 x dIF ⁄ dt
I
dI F /dt DIODE
Turn-off losses (in the diode) :
ta tb
V
t
VR × IRM 2 × S × F
dIR /dt P3 =
I RM 6 x dIF ⁄ dt
VR
trr = ta + tb S = tb / ta P3 and P5 are suitable for power MOSFET and
IGBT
Fig. D: TURN-ON CHARACTERISTICS

IF
I Fmax
dI F /dt

0 t Turn-on losses :
VF P4 = 0.4 (VFP - VF) . IFmax . tfr . F
V Fp

VF
1.1V F

0 t
tfr

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PACKAGE MECHANICAL DATA
ISOTOP

DIMENSIONS
REF. Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 11.80 12.20 0.465 0.480
A1 8.90 9.10 0.350 0.358
B 7.8 8.20 0.307 0.323
C 0.75 0.85 0.030 0.033
C2 1.95 2.05 0.077 0.081
D 37.80 38.20 1.488 1.504
D1 31.50 31.70 1.240 1.248
E 25.15 25.50 0.990 1.004
E1 23.85 24.15 0.939 0.951
E2 24.80 0.976
G 14.90 15.10 0.587 0.594
G1 12.60 12.80 0.496 0.504
G2 3.50 4.30 0.138 0.169
F 4.10 4.30 0.161 0.169
F1 4.60 5.00 0.181 0.197
P 4.00 4.30 0.157 0.69
P1 4.00 4.40 0.157 0.173
S 30.10 30.30 1.185 1.193

Cooling method : by conduction (C)

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PACKAGE MECHANICAL DATA
SOD93
DIMENSIONS
REF. Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 4.70 4.90 0.185 0.193
C 1.17 1.37 0.046 0.054
D 2.50 0.098
D1 1.27 0.050
E 0.50 0.78 0.020 0.031
F 1.10 1.30 0.043 0.051
F3 1.75 0.069
G 10.80 11.10 0.425 0.437
H 14.70 15.20 0.578 0.598
L 12.20 0.480
L2 16.20 0.638
L3 18.0 0.709
L5 3.95 4.15 0.156 0.163
L6 31.00 1.220
O 4.00 4.10 0.157 0.161

Cooling method : by conduction (C)

Recommended torque value : 0.8 m.N
Maximum torque value : 1m.N

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PACKAGE MECHANICAL DATA
DOP3I
DIMENSIONS
REF. Millimeters Inches
Min. Max. Min. Max.
A 4.4 4.6 0.173 0.181
B 1.45 1.55 0.057 0.061
C 14.35 15.60 0.565 0.614
D 0.5 0.7 0.020 0.028
E 2.7 2.9 0.106 0.114
F 15.8 16.5 0.622 0.650
G 20.4 21.1 0.815 0.831
H 15.1 15.5 0.594 0.610
K 3.4 3.65 0.134 0.144
L 4.08 4.17 0.161 0.164
N 10.8 11.3 0.425 0.444
P 1.20 1.40 0.047 0.055
R 4.60 typ. 0.181 typ.

Cooling method : by conduction (C)

Recommended torque value : 0.8 m.N
Maximum torque value : 1m.N

Ordering type Marking Package Weight Base qty Delivery mode

STTA6006P STTA6006P SOD93 3.79g 30 Tube
STTA6006PI STTA6006PI DOP3I 4.52g 30 Tube
STTA6006TV1 STTA6006TV1 ISOTOP 27g 10 Tube
STTA6006TV2 STTA006TV2 ISOTOP without screws 10 Tube
Epoxy meets UL94,V0

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use of such information nor for any infringementof patents or other rights of thirdparties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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