< Silicon RF Power MOS FET (Discrete) >

RD12MVS1
RoHS Compliance,Silicon MOSFET Power Transistor, 175MHz, 12W

DESCRIPTION OUTLINE DRAWING

RD12MVS1 is a MOS FET type transistor
specifically designed for VHF RF power
amplifiers applications.

FEATURES
High Power Gain:
Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz
High Efficiency: 57%typ. (175MHz)
Integrated gate protection diode.

APPLICATION
For output stage of high power amplifiers in
VHF band mobile radio sets.

RoHS COMPLIANT
RD12MVS1 is a RoHS compliant product.

ABSOLUTE MAXIMUM RATINGS

(Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to Source Voltage VGS=0V 50 V
VGSS Gate to Source Voltage VDS=0V -5/+10 V
ID Drain Current - 4 A
Pin Input Power Zg=Zl=50 2 W
Pch Channel Dissipation Tc=25°C 50 W
Tj Junction Temperature - 150 °C

Tstg Storage Temperature - -40 to +125 °C

Rthj-c Thermal Resistance Junction to Case 2.5 °C/W

Note: Above parameters are guaranteed independently.

Publication Date : Jun．2019

1
< Silicon RF Power MOS FET (Discrete) >

RD12MVS1
RoHS Compliance,Silicon MOSFET Power Transistor, 175MHz, 12W

ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)

LIMITS UNIT
SYMBOL PARAMETER CONDITIONS
MIN. TYP. MAX.
IDSS Zero Gate Voltage Drain Current VDS=17V, VGS=0V - - 10 uA
IGSS Gate to Source Leak Current VGS=10V, VDS=0V - - 1 uA
VTH Gate Threshold Voltage VDS=12V, IDS=1mA 1.8 - 4.4 V
Pout Output Power f=175MHz,VDD=7.2V 11.5 12 - W
D Drain Efficiency Pin=1.0W,Idq=1.0A 55 57 - %
VDD=9.2V,Po=12W(Pin Control)
Load VSWR tolerance f=175MHz,Idq=1.0A,Zg=50 Not destroy -
Load VSWR=20:1(All Phase)
Note: Above parameters, ratings, limits and conditions are subject to change.

Publication Date : Jun．2019

2
< Silicon RF Power MOS FET (Discrete) >

RD12MVS1
RoHS Compliance,Silicon MOSFET Power Transistor, 175MHz, 12W

TYPICAL CHARACTERISTICS

Vds-Ids CHARACTERISTICS Vgs-Ids CHARACTERISTICS

10
10 Vgs=7.5V
Ta=25 9 Ta=25℃
9 Vds=10V
Vgs=7.0V
8
8
Vgs=6.5V 7
7
6
6
Vgs=6.0V
Ids(A)

Ids(A)
5
4 4
Vgs=5.5V
3 3
Vgs=5.0V
2 2
Vgs=4.5V
1 1
Vgs=4.0V 0
0
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7
Vds(V) Vgs(V)

Vds VS. Ciss CHARACTERISTICS Vds VS. Coss CHARACTERISTICS

160 180
Ta=+25℃
Ta=+25℃ 160 f=1MHz
140
f=1MHz
140
120
120
100
Coss(pF)
Ciss(pF)

100
80
80
60
60
40
40
20
20
0
0
0 5 10 15 20
0 5 10 15 20
Vds(V)
Vds(V)

Vds VS. Crss CHARACTERISTICS

20
18 Ta=+25℃
f=1MHz
16
14
12
Crss(pF)

10
8
6
4
2
0
0 5 10 15 20
Vds(V)

Publication Date : Jun．2019

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< Silicon RF Power MOS FET (Discrete) >

RD12MVS1
RoHS Compliance,Silicon MOSFET Power Transistor, 175MHz, 12W

TYPICAL CHARACTERISTICS

Pin-Po CHARACERISTICS @f=175MHz Pin-Po CHARACERISTICS @f=175MHz

45 90 14 90

40 80 Po
12 80
Po
35 ηd 70
10 70
30 60 ηd

Pout(W)、Idd(A)
Po(ｄBm)、Gp(dB)

25 50 8 60

ηd(%)

ηd(%)
Gp
20 40
6 Ta=+25℃ 50
f=175MHz
15 30 Vdd=7.2V
4 Idq=1.0A 40
10 Ta=+25℃ 20
f=175MHz
5 Vdd=7.2V 10 2 30
Idq=1.0A Idd
0 0
0 5 10 15 20 25 30 35 0 20
0 500 1000 1500 2000
Pin(dBm)
Pin(mW)

Vdd-Po CHARACTERISTICS @f=175MHz

25 5
Ta=25°C
f=175MHz Po
Pin=1.0W
20 Idq=1.0A 4
Zg=ZI=50 ohm

Idd
15 3
Idd(A)
Po(W)

10 2

5 1

0 0
4 6 8 10 12
Vdd(V)

Publication Date : Jun．2019

4
< Silicon RF Power MOS FET (Discrete) >

RD12MVS1
RoHS Compliance,Silicon MOSFET Power Transistor, 175MHz, 12W

TEST CIRCUIT (f=175MHz)

Vgg Vdd

C1 C2 C3

W W

L2
24.9nH
47pF 4.7kOHM 33pF
Contact Contact
3.5mm 3.5mm 6.0mm 5.0mm 25mm RF-OUT
330pF L1
35mm 3mm 8nH 4mm 12mm
RF-in
20mm 330pF

RD12MV
S1
100pF 15pF 24pF 68pF

Note:Boad material PTFE substrate L:Enameled Wire

Micro strip line width=2.2mm/50、er:2.7、t=0.8mm L1:4Turns、D:0.43mm、φ1.66mm(outside diameter)
W:Line width=1.0mm L2:6Turns、D:0.43mm、φ2.46mm(outside diameter)
Chip Condencer :GRM40 C1、C2:1000ｐF
Copper Board spring t=0.1mm C3: 10μF、50V

INPUT / OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS

175MHz Zin* Zout*

Zo=50Ω

Vdd=7.2V, Idq=1.0A(Vgg adj.), Pin=1.0W

f=175MHz Zout*
Zin*=0.965-j7.73
Zout*=1.73-j1.14

Zin*: Complex conjugate of input impedance

Zout*: Complex conjugate of output impedance
f=175MHz Zin*

Publication Date : Jun．2019

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< Silicon RF Power MOS FET (Discrete) >

RD12MVS1
RoHS Compliance,Silicon MOSFET Power Transistor, 175MHz, 12W

RD12MVS1 S-PARAMETER DATA (@Vdd=12.5V, Id=1.0A)

Freq. S11 S21 S12 S22
[MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
25 1.054 -11.4 17.086 -131.5 0.001 102.9 0.883 169.4
50 1.541 -42.0 93.038 -155.2 0.011 114.5 0.798 80.1
75 1.522 -82.5 102.995 160.8 0.018 71.7 0.586 -11.3
100 1.261 -106.9 84.221 136.0 0.019 46.9 0.577 -71.6
125 1.117 -118.4 71.094 125.1 0.019 35.4 0.599 -96.0
150 0.994 -128.5 58.269 115.8 0.019 26.1 0.627 -114.9
175 0.930 -134.5 50.406 110.3 0.019 20.7 0.644 -124.9
200 0.874 -140.5 42.557 104.9 0.019 15.6 0.656 -133.7
225 0.845 -143.9 38.111 101.7 0.019 12.0 0.665 -138.4
250 0.821 -147.1 33.867 98.6 0.019 8.7 0.671 -142.7
300 0.796 -150.9 28.814 94.5 0.019 5.1 0.679 -147.4
325 0.784 -153.1 25.786 91.9 0.018 2.3 0.686 -150.1
350 0.776 -154.8 23.568 89.8 0.018 0.1 0.690 -152.2
375 0.773 -155.4 22.607 88.8 0.018 -0.5 0.692 -152.7
400 0.768 -156.6 20.864 87.0 0.018 -2.8 0.695 -154.2
425 0.765 -157.7 19.360 85.3 0.018 -4.1 0.699 -155.3
450 0.764 -158.1 18.677 84.5 0.018 -4.8 0.701 -155.8
475 0.762 -159.1 17.132 82.6 0.018 -7.1 0.705 -157.0
500 0.762 -159.7 16.409 81.5 0.018 -7.9 0.707 -157.5
550 0.761 -160.5 15.078 79.6 0.018 -9.8 0.712 -158.4
600 0.763 -161.5 13.430 76.9 0.018 -12.1 0.721 -159.5
650 0.766 -162.2 12.272 74.7 0.017 -14.2 0.726 -160.2
700 0.769 -162.8 11.210 72.6 0.017 -16.2 0.733 -160.8
750 0.771 -163.1 10.735 71.6 0.017 -17.4 0.736 -161.1
800 0.775 -163.6 9.876 69.5 0.017 -19.1 0.743 -161.5
850 0.780 -164.0 9.064 67.6 0.017 -20.7 0.750 -162.1
900 0.784 -164.3 8.609 66.3 0.016 -22.0 0.755 -162.4
950 0.790 -164.8 7.787 63.8 0.016 -24.5 0.765 -162.9
1000 0.794 -165.0 7.432 62.7 0.016 -25.8 0.769 -163.0

Publication Date : Jun．2019

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< Silicon RF Power MOS FET (Discrete) >

RD12MVS1
RoHS Compliance,Silicon MOSFET Power Transistor, 175MHz, 12W

ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice that have
a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch
off. At the near the product,do not place the combustible material that have possibilities to arise the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice
that do not leakage the unnecessary electric wave and use this products without cause damage for human and
property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.

PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:

1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details
regarding operation of these products from the formal specification sheet. For copies of the formal
specification sheets, please contact one of our sales offices.

2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed
for consumer mobile communication terminals and were not specifically designed for use in other applications.
In particular, while these products are highly reliable for their designed purpose, they are not manufactured
under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed
necessary for critical communications elements and In the application, which is base station applications and
fixed station applications that operate with long term continuous transmission and a higher on-off frequency
during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain
period and others as needed. For the reliability report which is described about predicted operating life time of
Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or an authorized Mitsubishi
Semiconductor product distributor.

3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore
appropriate ESD precautions are required.

4. In the case of use in below than recommended frequency, there is possibility to occur that the device is
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.

5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is
recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan,
etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.

6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to
extreme short current flow between the drain and the source of the device. These results causes in fire or
injury.

7. For specific precautions regarding assembly of these products into the equipment, please refer to the
supplementary items in the specification sheet.

8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in
any way from it’s original form.

9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page
of this data sheet.

Publication Date : Jun．2019

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< Silicon RF Power MOS FET (Discrete) >

RD12MVS1
RoHS Compliance,Silicon MOSFET Power Transistor, 175MHz, 12W

10. Please avoid use in the place where water or organic solvents can adhere directly to the product and the
environments with the possibility of caustic gas, dust, salinity, etc. Reliability could be markedly decreased
and also there is a possibility failures could result causing a serious accident. Likewise, there is a possibility
of causing a serious accident if used in an explosive gas environment. Please allow for adequate safety
margin in your designs.

11. Please refer to the additional precautions in the formal specification sheet.

Keep safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.

Notes regarding these materials

•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s
rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application
examples contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and algorithms
represents information on products at the time of publication of these materials, and are subject to change by
Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore
recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor
product distributor for the latest product information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or
errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including
the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).
•When using any or all of the information contained in these materials, including product data, diagrams, charts,
programs, and algorithms, please be sure to evaluate all information as a total system before making a final
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responsibility for any damage, liability or other loss resulting from the information contained herein.
•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system
that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric
Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product
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aerospace, nuclear, or undersea repeater use.
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Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
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•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for
further details on these materials or the products contained therein.

© 2017 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.

Publication Date : Jun．2019

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