QSZ4

Transistors

General purpose transistor

(isolated transistor and diode)
QSZ4

A 2SB1706 and a 2SD2671 are housed independently in a TSMT5 package.

zApplications zDimensions (Unit : mm)

DC / DC converter QSZ4
Motor driver

(5) (4)

zFeatures
1) Low VCE(sat)
2) Small package
(1) (2) (3)

ROHM : TSMT5 Each lead has same dimensions

zStructure
Silicon epitaxial planar transistor Abbreviated symbol : Z04

zEquivalent circuit

(5) (4)

Tr1 Tr2

(1) (2) (3)

zPackaging specifications
Type QSZ4
Package TSMT5
Marking Z04
Code TR
Basic ordering unit(pieces) 3000

Rev.B 1/4
 QSZ4
Transistors

zAbsolute maximum ratings (Ta=25°C)

Tr1
Parameter Symbol Limits Unit
Collector-base voltage VCBO −30 V
Collector-emitter voltage VCEO −30 V
Emitter-base voltage VEBO −6 V
IC −2 A
Collector current ∗1
ICP −4 A
500 mW/Total ∗2
Power dissipation Pc 1.25 W/Total ∗3
0.9 W/Element ∗3
Junction temperature Tj 150 °C
Range of storage temperature Tstg −55 to +150 °C
∗1 Single pulse, Pw=1ms.
∗2 Each terminal mounted on a recommended land.
∗3 Mounted on a 25×25× t 0.8mm ceramic substrate.

Tr 2
Parameter Symbol Limits Unit
Collector-base voltage VCBO 30 V
Collector-emitter voltage VCEO 30 V
Emitter-base voltage VEBO 6 V
IC 2 A
Collector current ∗1
ICP 4 A
500 mW/Total ∗2
Power dissipation Pc 1.25 W/Total ∗3
0.9 W/Element ∗3
Junction temperature Tj 150 °C
Range of storage temperature Tstg −55 to +150 °C
∗1 Single pulse, Pw=1ms.
∗2 Each terminal mounted on a recommended land.
∗3 Mounted on a 25×25× t 0.8mm ceramic substrate.

zElectrical characteristics (Ta=25°C)

Tr1
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO −30 − − V IC= −10µA
Collector-emitter breakdown voltage BVCEO −30 − − V IC= −1mA
Emitter-base breakdown voltage BVEBO −6 − − V IE= −10µA
Collector cutoff current ICBO − − −100 nA VCB= −30V
Emitter cutoff current IEBO − − −100 nA VEB= −6V
Collector-emitter saturation voltage VCE(sat) − −180 −370 mV IC= −1.5A, IB= −75mA
DC current gain hFE 270 − 680 − VCE= −2V, IC= −200mA∗
Transition frequency fT − 280 − MHz VCE= −2V, IE=200mA, f=100MHz∗
Collector output capacitance Cob − 20 − pF VCB= −10V, IE=0A, f=1MHz
∗ Pulsed

Tr 2
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO 30 − − V IC=10µA
Collector-emitter breakdown voltage BVCEO 30 − − V IC=1mA
Emitter-base breakdown voltage BVEBO 6 − − V IE=10µA
Collector cutoff current ICBO − − 100 nA VCB=30V
Emitter cutoff current IEBO − − 100 nA VEB=6V
Collector-emitter saturation voltage VCE(sat) − 180 370 mV IC=1.5A, IB=75mA
DC current gain hFE 270 − 680 − VCE=2V, IC=200mA ∗
Transition frequency fT − 280 − MHz VCE=2V, IE= −200mA, f=100MHz∗
Collector output capacitance Cob − 20 − pF VCB=10V, IE=0A, f=1MHz
∗ Pulsed

Rev.B 2/4
 QSZ4
Transistors

zElectrical characteristic curves

Tr1(PNP)

COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

1000 10 10

BASE SATURATION VOLTAGE : VBE(sat) (V)

VCE= −2V IC/IB=20/1 Ta=25 C
Ta=100 C
Pulsed Pulsed Pulsed
DC CURRENT GAIN : hFE

Ta=25 C
1
Ta=−40 C

100 1
IC/IB=50/1

0.1 IC/IB=20/1 IC/IB=10/1

Ta=−40 C

Ta=25 C

Ta=100 C

10 0.01 0.1
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10

COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A)

Fig.1 DV current gain Fig.2 Collector-emitter saturation voltage Fig.3 Base-emitter saturation voltage
vs. collector current vs. collector current vs. collectir current

10 1000 10000
VBE=2V Ta=25 C Ta=25 C
TRANSITION FREQUENCY : fT (MHz)

Pulsed VCE= −2V VCE= −12V

COLLECTOR CURRENT :IC (A)

f=100MHz IC/IB=20/1
Pulsed

SWITCHINGTIME : (ns)
1000
Ta=100 C
tstg
Ta=25 C
1

Ta=−40 C
100 100

tf

0.1
tdon
10

tr

0.01 10
1
0.1 1 10 0.01 0.1 1 10 0.01 0.1 1 10
BASE TO EMITTER CURRENT : VBE (V) EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC(A)
Fig.4 Grounded emitter propagation Fig.5 Gain bandwidth product Fig.6 Switching time
characteristics vs. emitter curent

1000
IC=0A
f=1MHz
Cib Ta=25 C
COLLECTOR CURRENT :IC (A)

100

Cob

10

1
0.001 0.01 0.1 1 10 100
EMITTER TO BASE VOLTAGE : VBE (V)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

Rev.B 3/4
 QSZ4
Transistors

Tr2(NPN)

COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

BASE SATURATION VOLTAGE : VBE(sat) (V)

1000 10 10
VCE=−2V IC/IB=20/1 IC/IB=20/1
Pulsed Pulsed Pulsed
Ta=125 C
Ta=25 C
DC CURRENT GAIN : hFE

Ta=−25 C Ta=−25 C
1
Ta=25 C
Ta=−25 C Ta=125 C
1
Ta=25 C
100 Ta=125 C
0.1

10 0.01 0.1
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10

COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A)

Fig.8 DC current gain Fig.9 Collector-emitter saturation voltage Fig.10 Base-emitter saturation voltage
vs. collector current base-emitter saturation voltage vs. collector current
vs. collector current

10 1000 1000

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

VCE=−2V Ta=25 C IC=0A
TRANSITION FREQUENCY : fT (MHz)

Pulsed VCE=−2V

EMITTER INPUT CAPACITANCE : Cib (pF)

f=1MHz
f= 100MHz
COLLECTOR CURRENT : IC (A)

Ta=25 C
Ta=125 C Cob
1

Ta=25 C

Ta=−25 C
0.1 100 100

Cib
0.01

0.001 10 10
0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100

BASE TO EMITTER CURRENT : VBE (V) EMITTER CURRENT : IE (A) EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR TO BASE VOLTAGE : VCB (V)

Fig.11 Grounded emitter propagation Fig.12 Gain bandwidth product Fig.13 Collector output chapacitance
characteristics vs. emitter current vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

Rev.B 4/4
Appendix

Notes
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The contents described herein are subject to change without notice. The specifications for the
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that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
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range of the specifications or due to non-compliance with the NOTES specified in this catalog.

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Appendix1-Rev2.0