Scribd
Upload
85 views6 pages

Course: Electronic Circuit Devices Lab No: 02 Title: Bipolar Junction Transistor DC Response. CID: - Date

This lab exercise aims to: 1) Demonstrate relationships between collector current (IC), base current (IB), and collector-emitter voltage (VCE) in a bipolar junction transistor (BJT) through measurement and calculation. 2) Plot output characteristic curves and generate a dc load line for a BJT in a basic base bias circuit. 3) Calculate current gain (hFE) and verify transistor operation through diode checks and measurement of currents and voltages.

Uploaded by

Aamir Chohan
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
85 views6 pages

Course: Electronic Circuit Devices Lab No: 02 Title: Bipolar Junction Transistor DC Response. CID: - Date

This lab exercise aims to: 1) Demonstrate relationships between collector current (IC), base current (IB), and collector-emitter voltage (VCE) in a bipolar junction transistor (BJT) through measurement and calculation. 2) Plot output characteristic curves and generate a dc load line for a BJT in a basic base bias circuit. 3) Calculate current gain (hFE) and verify transistor operation through diode checks and measurement of currents and voltages.

Uploaded by

Aamir Chohan
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 6

Department of Electronics & Telecommunication Engineering

Course: Electronic Circuit Devices

Lab No: 02

Title: Bipolar Junction Transistor DC Response.

CID: ________________

Date: _______________

S. No. Name SID Initials Marks


1

Faculty/Lab Engineer

Comments
Objectives
After completing this exercise, you should be able to:

 Demonstrate the relationship between collector current(IC) and base current (IB).
 Plot the output characteristic curves for a bipolar junction transistor (BJT) using measured
component values.
 Verify whether a BJT is faulty using the diode-check function of a DMM.
 Calculate the dc forward current gain (hFE) for a BJT using measured values of Ic and IB.
 Demonstrate the relationship among IB, IC, and VCE in a BJT.
 Draw the dc load line for a base-bias circuit. Use the dc load line to identify combinations of IC
and VCE for a BJT circuit.
 Perform a dc analysis of a voltage-divider bias circuit.
 Explain the effect that RIN (base) has on the base voltage of a voltage divider biased circuit.
 Demonstrate the stability of the voltage divider bias circuit.

Discussion
Bipolar Junction Transistor

The BJT is a three-terminal device designed so that its collector current (IC) is controlled by its Base
Current (IB). For this reason, the BJT is referred to as a current-controlled device. In contrast, another
type of transistor, the field effect transistor (FET), is a voltage-controlled device.

There is a direct relationship between the value of collector current and base current. IC changes
proportional with Ib. The factor by which current increases from base to collector is referred to as
forward current gain and is represented by Greek letter Beta (β). This relationship can be expressed as:

IC =β IB

Another measurement of interest when evaluating a BJT circuit is the voltage across the collector and
emitter terminals of the transistor (VCE). The Value of VCE is determined by the collector supply voltage
(VCCs), any resistance in the collector and emitter circuits (RC and RE), and the collector current (IC). In this
exercise, you will observe and measure the current and voltage relationships for the BJT.

Base Bias

Base bias is the simplest of the transistor biasing circuits. It consists of a single transistor, two resistors,
and a single dc power supply. In this exercise you will use base bias to re-examine the relationships
among IB, IC, and VCE.

A dc load line is a graph that represents every possible combination of IC and VCE for a transistor biasing
circuit. You will generate the dc load line for the base-bias circuit.
Useful Relationships

VCE(off)=VCC

VCEQ = 0.5 VCC

IC =0.5IC (sat)

Materials
1 Dual-Polarity Variable dc power supply
1 DMMs
1 Protoboard
1 resistor 100K, 2K, 10K, 560, 1.5K, 6.8K, 33K, 68K, 330K.
1 5M potentiometer
2 2N3904 npn transistor
1 2N3906 pnp transistor

Procedure

Part I: BJT testing


There are two junctions in a BJT: the base emitter junction, and the collector base
junction. Connecting a DMM (set to the diode test function) across either junction
should result in the same readings you would obtain when testing a diode. It is
important to note that both pn-junctions lie between the emitter and collector
terminals. As a result, both forward and reverse readings across these two terminals
should always read as an open.

1. Set your DMM to the diode-check function and measure the voltage drop across the
junctions of the 2N3904 as shown in Figure 3a. Note the polarity signs of the meter
connections. Record these values in the boxes provided in the figure.
Figure 3a: npn transistor tests.

2. Repeat Step 10 for the 2N3906 pnp transistor Record your measurements in the
circles provided in Figure 3b.

Figure 3b: pnp transistor tests.

Part III: BJT Voltage and Current Characteristics for Base Bias

3. Measure the values all the resistances for the circuit in Figure 4 and Record these
Values in table below:
Component Normal Value Measured Value
RB2 10K
RC 2K

4. Adjust RB1 until you get a reading of 2 mA in the collector circuit.


5. Measure the VRB2 with your DMM, and use the measured value of RB2 to calculate
the IB. Then measure VCE, and record both these results in Table 2.
6. Repeat steps 13 and 14 for values of IC = 4mA, 6mA and 8mA. Record your results in
Table below.
7. Use the values of IC and IB to calculate the value of dc forward current gain (hFE) for
the transistor at each value of IC. Record these calculations in Table.
Figure 4: Base Bias Test Circuit

IC IB VCE hFE
2mA
4mA
6mA
8mA
Table 2: Current values for the transistor in Figure 4.

Part IV: Base Bias


8. Using your measured value of RC and a VCC of 20V, calculate IC and VCE. Then plot the
dc load line for this circuit in the space provided in Figure 5.
IC (sat) = ____________ VCE (off)=_______________
9. Use the load line drawn in figure 5 to predict the value of IC for VCE values of 2V, 8V,
and 16 V. Enter these values in Table 3.
10. Adjust RB1 until VCE =2V. Measure IC and record this value in Table 3. Repeat the
adjustment for the other VCE values listed in step 8. Enter your results in table.
VCE Ic (Predicted) Ic (Measured)
2V
8V
16 V
Table 3: Predicted and Measured Current Values
Figure 5: The dc load line for the circuit in Figure 4

You might also like