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    Electronics Circuit - 1 Lab Report: Name of The Experiment - Study of Diode Characteristics

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    Istiaque Ahmed
    This document summarizes a student's lab report on studying the I-V characteristics of a silicon p-n junction diode. The objectives were to examine the diode's behavior under forward and reverse bias. Components used included a diode, resistor, power supply, signal generator and oscilloscope. Under forward bias, the diode acts like a closed switch with low resistance, allowing current to flow. In reverse bias, it acts like an open switch with high resistance, blocking most current flow. Tables of experimental forward and reverse bias voltage and current values were recorded to plot the I-V characteristics curves.

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    Electronics Circuit - 1 Lab Report: Name of The Experiment - Study of Diode Characteristics

    Uploaded by

    Istiaque Ahmed
    151 views5 pages
    This document summarizes a student's lab report on studying the I-V characteristics of a silicon p-n junction diode. The objectives were to examine the diode's behavior under forward and reverse bias. Components used included a diode, resistor, power supply, signal generator and oscilloscope. Under forward bias, the diode acts like a closed switch with low resistance, allowing current to flow. In reverse bias, it acts like an open switch with high resistance, blocking most current flow. Tables of experimental forward and reverse bias voltage and current values were recorded to plot the I-V characteristics curves.

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    Electronics Circuit

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    This document summarizes a student's lab report on studying the I-V characteristics of a silicon p-n junction diode. The objectives were to examine the diode's behavior under forward and reverse bias. Components used included a diode, resistor, power supply, signal generator and oscilloscope. Under forward bias, the diode acts like a closed switch with low resistance, allowing current to flow. In reverse bias, it acts like an open switch with high resistance, blocking most current flow. Tables of experimental forward and reverse bias voltage and current values were recorded to plot the I-V characteristics curves.

    Copyright:

    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    151 views5 pages

    Electronics Circuit - 1 Lab Report: Name of The Experiment - Study of Diode Characteristics

    Uploaded by

    Istiaque Ahmed
    This document summarizes a student's lab report on studying the I-V characteristics of a silicon p-n junction diode. The objectives were to examine the diode's behavior under forward and reverse bias. Components used included a diode, resistor, power supply, signal generator and oscilloscope. Under forward bias, the diode acts like a closed switch with low resistance, allowing current to flow. In reverse bias, it acts like an open switch with high resistance, blocking most current flow. Tables of experimental forward and reverse bias voltage and current values were recorded to plot the I-V characteristics curves.

    Copyright:

    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    of 5

    Electronics Circuit -1

    Lab Report
    Name of The Experiment – Study of Diode Characteristics

    Students ID –
    Name of the Experiment –

    Study of Diode Characteristics

    Objective –

    To study the I-V characteristics of silicon p-n junction diodes in forward and
    reverse bias.

    Component/ Materials Required –

    Materials Quantity
    p-n Junction diode(N4003) One
    Resistor (1k) One
    Trainer Board One
    Dc Power Supply One
    Signal Generator One
    Oscilloscope one
    Chords and wire lot

    Biasing of P-N Junction Diode –

    Forward bias operation

    The P-N junction supports uni-directional current flow. If +ve terminal of the input
    supply is connected to P-side and –ve terminal is connectedthe n side, then diode
    is said to be forward biasedcondition. In this condition the height of the potential
    barrier at the junction is lowered by an amount equal to given forward biasing
    voltage. Both the holes from p-side and electrons from n-side crossthe junction
    simultaneously thereby decreasing the depleted region. This constitutesa forward
    current (majority carrier movement–diffusion current). Assuming current flowing
    through the diode to be very large, the diode can be approximated as short-
    circuited switch.Diode offers a very small resistance called forward resistance(few
    ohms)
    Reverse bias operation

    If negative terminal of the input supply is connected to p-sideand –ve terminal is


    connected to n-side then the diode is said to be reverse biased. In this condition
    an amount equal to reverse biasing voltage increases the height of the potential
    barrier at the junction. Both the holes on P-side and electrons on N-side tend to
    move away from the junction there by increasing the depleted region.However
    the process cannot continue indefinitely, thus a small current called reverse
    saturation current continues to flow in the diode. This current is negligible; the
    diode can be approximated as an open circuited switchit offers a very high
    resistancecalled reverse resistance(few Kiloohms).
    Forward Bias Diode Procedure –
     Connect the circuit as shown.
     Initially vary Regulated Power Supply voltage in Va.
     Tabulate different forward current.
     Plot the V-I characteristics.
     Compare the theoretical and practical values.

    Vdc Vd Vr Id
    0 0.004v 0v 0mA
    0.2 0.268v 0.026v 0.026mA
    0.4 0.400v 0.127v 0.127mA
    0.6 0.504v 0.309v 0.309mA
    0.8 0.543v 0.462v 0.462mA
    1.0 0.580v 0.668v 0.668mA
    1.2 0.590v 0.824v 0.824mA
    1.4 0.600v 1.024v 1.024mA
    1.6 0.607v 1.200v 1.200mA
    1.8 0.615v 1.447v 1.447mA
    2.0 0.620v 1.573v 1.573mA
    2.2 0.627v 1.834v 1.834mA
    2.4 0.631v 2.044v 2.044mA
    2.6 0.634v 2.177v 2.177mA
    3.0 0.639v 2.395v 2.395mA
    10 0.699v 9.314v 9.314mA
    12 0.701v 11.32v 11.32mA
    14 0.713v 13.28v 13.28mA

    Reverse Bias Diode Procedure –


     Connect the circuit as shown.
     Initially vary Regulated Power Supply voltage in Va.
     Tabulate different forward current.
     Plot the V-I characteristics.
     Compare the theoretical and practical values.
    V Vd Vr
    0v 0.7mv 0
    2v 2.053mv 0
    4v 4.01mv 0
    6v 6.07mv 0
    8v 8.03mv 0
    10v 10.03mv 0
    12v 12.07mv 0
    14v 14.01mv 0
    16v 16.09mv 0
    18v 18.03mv 0
    20v 20.01mv 0

    14
    I
    12

    10

    I
    6

    0
    0 6 2 -8 -4 0 4 8 2 6 2 4 8 10 14
    -2 -1 -1 0. 0. 1. 1. 2. 2.

    Result –

    Volt-Ampere characteristics of P-N Diode are studied.

    Analyzing the characteristics of PN diode are studied

    Calculating the resistance in forward bias and reverse bias are studied.

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