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Freescale Semiconductor Document Number: MRF5S19060N

Technical Data Rev. 4, 8/2005

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1
Designed for broadband commercial and industrial applications with
frequencies from 1930 to 1990 MHz. The high gain and broadband MRF5S19060NBR1
performance of these devices make them ideal for large - signal, common - MRF5S19060MR1
source amplifier applications in 28 Volt base station equipment.
• Typical 2 - carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, MRF5S19060MBR1
Pout = 12 Watts Avg., Full Frequency Band. IS - 95 (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF. 1990 MHz, 12 W AVG., 28 V
Power Gain — 14 dB 2 x N - CDMA
Drain Efficiency — 23%
LATERAL N - CHANNEL
IM3 @ 2.5 MHz Offset — - 37 dBc @ 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — - 51 dBc @ 30 kHz Channel Bandwidth RF POWER MOSFETs
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 12 Watts Avg.
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant. CASE 1486 - 03, STYLE 1
• 200°C Capable Plastic Package TO - 270 WB - 4
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. PLASTIC
MRF5S19060NR1(MR1)

CASE 1484 - 02, STYLE 1

TO - 272 WB - 4
PLASTIC
MRF5S19060NBR1(MBR1)
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain - Source Voltage VDSS - 0.5, +65 Vdc
Gate - Source Voltage VGS - 0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C PD 218.8 W
Derate above 25°C 1.25 W/°C
Storage Temperature Range Tstg - 65 to +175 °C
Operating Junction Temperature TJ 200 °C

Table 2. Thermal Characteristics

Characteristic Symbol Value (1,2) Unit
Thermal Resistance, Junction to Case RθJC °C/W
Case Temperature 75°C, 12 W CW 0.80
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

 Freescale Semiconductor, Inc., 2005. All rights reserved. MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1
RF Device Data
Freescale Semiconductor 1
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22 - A114) 1C (Minimum)
Machine Model (per EIA/JESD22 - A115) C (Minimum)
Charge Device Model (per JESD22 - C101) IV (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology Rating Package Peak Temperature Unit
Per JESD 22 - A113, IPC/JEDEC J - STD - 020 3 260 °C

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current IDSS — — 10 µAdc
(VDS = 65 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current IDSS — — 1 µAdc
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate - Source Leakage Current IGSS — — 1 µAdc
(VGS = 5 Vdc, VDS = 0 Vdc)

On Characteristics
Gate Threshold Voltage VGS(th) 2.5 — 3.5 Vdc
(VDS = 10 Vdc, ID = 225 µAdc)
Gate Quiescent Voltage VGS(Q) — 3.8 — Vdc
(VDS = 28 Vdc, ID = 750 mAdc)
Drain - Source On - Voltage VDS(on) — 0.26 — Vdc
(VGS = 5 Vdc, ID = 2.25 Adc)
Forward Transconductance gfs — 5 — S
(VDS = 10 Vdc, ID = 2.25 Adc)

Dynamic Characteristics (1)

Reverse Transfer Capacitance Crss — 1.5 — pF
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 750 mA, Pout = 12 W Avg., f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz., 2 - carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain Gps 12.5 14 16 dB
Drain Efficiency ηD 21 23 — %
Intermodulation Distortion IM3 — - 37 - 35 dBc
Adjacent Channel Power Ratio ACPR — - 51 - 48 dBc
Input Return Loss IRL — - 12 -9 dB
1. Part is internally matched both on input and output.
(continued)

MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1

RF Device Data
2 Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical RF Performance (50 ohm system)
Pulse Peak Power Psat — 110 — W
(VDD = 28 Vdc, 1 - Tone CW Pulsed, IDQ = 750 mA, tON = 8 µs,
1% Duty Cycle)
Video Bandwidth VBW — 35 — MHz
(VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 750 mA, Tone Spacing =
1 MHz to VBW, ∆ IM3<2dB)

MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1

RF Device Data
Freescale Semiconductor 3
 Z11
VBIAS VSUPPLY
R1
+ + + +
R2
C1 C2 Z6
C3 C4 C5 C6

R3

RF RF
INPUT OUTPUT
Z1 Z2 Z3 Z4 Z5 Z7 Z8 Z9 Z10

C7 C12
DUT
C8 C9 C10 C11

Z12

+ +
C13 C14 C15

Z1 0.250″ x 0.083″ Microstrip Z8* 0.420″ x 0.083″ Microstrip

Z2* 0.500″ x 0.083″ Microstrip Z9* 0.975″ x 0.083″ Microstrip
Z3* 0.500″ x 0.083″ Microstrip Z10 0.250″ x 0.083″ Microstrip
Z4* 0.515″ x 0.083″ Microstrip Z11 0.700″ x 0.080″ Microstrip
Z5 0.480″ x 1.000″ Microstrip Z12 0.700″ x 0.080″ Microstrip
Z6 1.140″ x 0.080″ Microstrip PCB Taconic TLX8 - 0300, 0.030″, εr = 2.55
Z7 0.600″ x 1.000″ Microstrip * Variable for tuning

Figure 1. MRF5S19060NR1(NBR1)/MR1(MBR1) Test Circuit Schematic

Table 6. MRF5S19060NR1(NBR1)/MR1(MBR1) Test Circuit Component Designations and Values

Part Description Part Number Manufacturer
C1 1 µF, 35 V Tantalum Capacitor TAJB105K35 AVX
C2 10 pF 100B Chip Capacitor 100B10R0CW ATC
C3, C7, C12, C13 6.8 pF 100B Chip Capacitors 100B6R8CW ATC
C4, C5, C14, C15 10 µF, 35 V Tantalum Capacitors TAJD106K035 AVX
C6 220 µF, 63 V Electrolytic Capacitor, Radial 13668221 Philips
C8 0.8 pF 100B Chip Capacitor 100B0R8BW ATC
C9 1.5 pF 100B Chip Capacitor 100B1R5BW ATC
C10 1.0 pF 100B Chip Capacitor 100B1R0BW ATC
C11 0.2 pF 100B Chip Capacitor 100B0R2BW ATC
R1, R2 10 kW, 1/4 W Chip Resistors (1206)
R3 10 W, 1/4 W Chip Resistors (1206)

MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1

RF Device Data
4 Freescale Semiconductor
 VGG VDD
C3
R1

R2 C1 C2
C4 C5

R3 C6

CUT OUT AREA

C7 C8 C9 C10 C11 C12

C14 C15

C13

MRF5S19060M
Rev 0

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.

Figure 2. MRF5S19060NR1(NBR1)/MR1(MBR1) Test Circuit Component Layout

MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1

RF Device Data
Freescale Semiconductor 5
 TYPICAL CHARACTERISTICS

14.8 24

EFFICIENCY (%)
ηD, DRAIN
14.6 23
ηD

Gps, POWER GAIN (dB)

VDD = 28 Vdc, Pout = 12 W (Avg.), IDQ = 750 mA
14.4 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing, 22
Gps

IRL, INPUT RETURN LOSS (dB)

1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
14.2 @ 0.01% Probability (CCDF) −35 −5
IM3

IM3 (dBc), ACPR (dBc)

14 IRL −41 −10

13.8 −47 −15

ACPR
13.6 −53 −20
1900 1920 1940 1960 1980 2000 2020
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance @ Pout = 12 Watts Avg.

14.2 39

EFFICIENCY (%)
ηD, DRAIN
14 37
ηD
Gps, POWER GAIN (dB)

13.8 Gps 35
VDD = 28 Vdc, Pout = 30 W (Avg.), IDQ = 750 mA

IRL, INPUT RETURN LOSS (dB)

2−Carrier N−CDMA, 2.5 MHz Carrier Spacing, IM3
13.6 −25 −5

IM3 (dBc), ACPR (dBc)

1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
IRL
@ 0.01% Probability (CCDF)
13.4 −31 −10

13.2 ACPR −37 −15

13 −43 −20
1900 1920 1940 1960 1980 2000 2020
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier N - CDMA Broadband Performance @ Pout = 30 Watts Avg.

17 −15
VDD = 28 Vdc VDD = 28 Vdc
INTERMODULATION DISTORTION (dBc)

f1 = 1960 MHz, f2 = 1962.5 MHz −20 f1 = 1960 MHz, f2 = 1962.5 MHz

IDQ = 1150 mA Two −Tone Measurements, 2.5 MHz Tone Spacing Two −Tone Measurements,
16 −25 2.5 MHz Tone Spacing
Gps, POWER GAIN (dB)

950 mA
IMD, THIRD ORDER

−30 IDQ = 350 mA

15
750 mA −35
1150 mA
−40
14 950 mA
550 mA −45
750 mA
13 −50
350 mA 550 mA
−55
12 −60
1 10 100 1 10 100
Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus Figure 6. Third Order Intermodulation Distortion
Output Power versus Output Power

MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1

RF Device Data
6 Freescale Semiconductor
 TYPICAL CHARACTERISTICS

−10 54
IMD, INTERMODULATION DISTORTION (dBc)

P3dB = 49.4 dBm (87 W)

VDD = 28 Vdc, Pout = 12 W (Avg.), IDQ = 750 mA 53 Ideal
−15
Two −Tone Measurements, Center Frequency = 1960 MHz
−20 52

Pout, OUTPUT POWER (dBm)

P1dB = 48.65 dBm (73.3 W)
51
−25 Actual
3rd Order 50
−30
49
−35
48
−40 5th Order 47
−45 46 VDD = 28 Vdc, IDQ = 750 mA
7th Order
Pulsed CW, 8 µsec(on), 1 msec(off)
−50 45 f = 1960 MHz
−55 44
0.1 1 10 100 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44
TWO −TONE SPACING (MHz) Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products Figure 8. Pulse CW Output Power versus
versus Tone Spacing Input Power
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)

40 −10
VDD = 28 Vdc, IDQ = 750 mA TC = −30_C
25_C ηD
35 f1 = 1960 MHz, f2 = 1962.5 MHz 85_C −20
2−Carrier N−CDMA, 2.5 MHz Carrier 85_C
30 IM3 −30
Spacing, 1.2288 MHz Channel

IM3, (dBc), ACPR (dBc)

25_C
Bandwidth, PAR = 9.8 dB −30_C
25 −40
@ 0.01% Probability (CCDF) ACPR
85_C
20 25_C −50
Gps −30_C
15 −30_C −60
25_C
10 85_C −70

5 −80

0 −90
1 10 100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. 2 - Carrier N - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power

16 60 16
TC = −30_C 25_C
15 50 15
ηD, DRAIN EFFICIENCY (%)

−30_C
Gps, POWER GAIN (dB)

25_C
VDD = 32 V
Gps, POWER GAIN (dB)

14 40 14
85_C 85_C
13 30 13
VDD = 28 Vdc ηD 28 V
IDQ = 750 mA
12 f = 1960 MHz 20 12

11 Gps 10 11 IDQ = 750 mA

24 V f = 1960 MHz
10 0 10
1 10 100 30 50 70 90
Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency Figure 11. Power Gain versus Output Power
versus CW Output Power
MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1
RF Device Data
Freescale Semiconductor 7
 TYPICAL CHARACTERISTICS

109

MTTF FACTOR (HOURS X AMPS2)

108

107

106
90 100 110 120 130 140 150 160 170 180 190 200 210
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.

Figure 12. MTTF Factor versus Junction Temperature

N - CDMA TEST SIGNAL

100 0
1.2288 MHz
−10 Channel BW
10
−20
−IM3 @ +IM3 @
1
PROBABILITY (%)

−30 1.2288 MHz 1.2288 MHz

Integrated BW Integrated BW
−40
0.1
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
(dB)

−50
Through 13) 1.2288 MHz Channel Bandwidth
0.01
Carriers. ACPR Measured in 30 kHz Bandwidth @ −60
±885 kHz Offset. IM3 Measured in 1.2288 MHz
0.001 Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ −70 −ACPR @ 30 kHz +ACPR @ 30 kHz
0.01% Probability on CCDF. Integrated BW Integrated BW
−80
0.0001
0 2 4 6 8 10 −90
PEAK −TO−AVERAGE (dB)
−100
Figure 13. 2 - Carrier CCDF N - CDMA −7.5 −6 −4.5 −3 −1.5 0 1.5 3 4.5 6 7.5
f, FREQUENCY (MHz)
Figure 14. 2 - Carrier N - CDMA Spectrum

MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1

RF Device Data
8 Freescale Semiconductor
 f = 1990 MHz
Zload
f = 1930 MHz f = 1990 MHz
Zsource
f = 1930 MHz

Zo = 5 Ω

VDD = 28 Vdc, IDQ = 750 mA, Pout = 12 W Avg.

f Zsource Zload
MHz Ω Ω

1930 3.11 - j4.55 2.60 - j3.18

1960 3.06 - j4.38 2.50 - j2.85

1990 2.93 - j4.28 2.44 - j2.53

Zsource = Test circuit impedance as measured from

gate to ground.

Zload = Test circuit impedance as measured

from drain to ground.

Input Device Output

Matching Under Matching
Network Test Network

Z Z
source load

Figure 15. Series Equivalent Source and Load Impedance

MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1

RF Device Data
Freescale Semiconductor 9
 PACKAGE DIMENSIONS

B E1
A
2X
E3

GATE LEAD
DRAIN LEAD

D1 D
4X
e

4X
b1
aaa M C A

2X
2X
D2
E NOTES:
1. CONTROLLING DIMENSION: INCH.
F 2. INTERPRET DIMENSIONS AND TOLERANCES
H DATUM ZONE J PER ASME Y14.5M−1994.
c1 PLANE 3. DATUM PLANE −H− IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
A THE TOP OF THE PARTING LINE.
A1 4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO
A2 2X INCLUDE MOLD MISMATCH AND ARE DETER−
NOTE 7 E2 SEATING MINED AT DATUM PLANE −H−.
C PLANE 5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR
E5 PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE “b1" DIMENSION AT MAXIMUM MATERIAL
E4 PIN 5
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT

ÇÇÇÇÇÇ
DATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY.

ÇÇÇÇÇÇ
8. HATCHING REPRESENTS THE EXPOSED AREA
NOTE 8 OF THE HEAT SLUG.

ÇÇÇÇÇÇ
INCHES MILLIMETERS

ÇÇÇÇÇÇ
DIM MIN MAX MIN MAX
A .100 .104 2.54 2.64
A1 .039 .043 0.99 1.09

ÇÇÇÇÇÇ
A2 .040 .042 1.02 1.07
4 1 D .712 .720 18.08 18.29

ÇÇÇÇÇÇ
D1 .688 .692 17.48 17.58
D2 .011 .019 0.28 0.48

ÇÇÇÇÇÇ
D3 .600 −−− 15.24 −−−
E .551 .559 14 14.2
D3

ÇÇÇÇÇÇ
E1 .353 .357 8.97 9.07
E2 .132 .140 3.35 3.56

ÇÇÇÇÇÇ
E3 .124 .132 3.15 3.35
3 2 E4 .270 −−− 6.86 −−−

ÇÇÇÇÇÇ
E5 .346 .350 8.79 8.89
F .025 BSC 0.64 BSC

ÇÇÇÇÇÇ
b1 .164 .170 4.17 4.32
c1 .007 .011 0.18 0.28
e .106 BSC 2.69 BSC

ÇÇÇÇÇÇ
aaa .004 0.10

ÇÇÇÇÇÇ
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
CASE 1486 - 03 4. GATE
E5 ISSUE C 5. SOURCE

BOTTOM VIEW TO - 270 WB - 4

PLASTIC
MRF5S19060NR1(MR1)

MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1

RF Device Data
10 Freescale Semiconductor
 A
E1 B E2
2X r1
aaa M C A B

GATE LEAD DRAIN LEAD

ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
PIN 5

ÉÉÉÉÉÉ
NOTE 8

ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
3 1

ÉÉÉÉÉÉ
D1 D D2
ÉÉÉÉÉÉ
4X
e
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
4 2

4X b1
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
aaa M C A
ÉÉÉÉÉÉ
E3
E
VIEW Y - Y
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES PER
ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
c1 F AND IS COINCIDENT WITH THE LEAD WHERE THE
DATUM ZONE J LEAD EXITS THE PLASTIC BODY AT THE TOP OF
H PLANE THE PARTING LINE.
4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
A IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO
A1 INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
E3 5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR
A2 Y Y SEATING
PROTRUSION. ALLOWABLE DAMBAR
C PLANE
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE "b1" DIMENSION AT MAXIMUM MATERIAL
7 CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA OF
THE HEAT SLUG.

INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A .100 .104 2.54 2.64
A1 .039 .043 0.99 1.09
A2 .040 .042 1.02 1.07
D .928 .932 23.57 23.67
D1 .810 BSC 20.57 BSC
D2 .600 −−− 15.24 −−−
STYLE 1:
E .551 .559 14 14.2
PIN 1. DRAIN
2. DRAIN E1 .353 .357 8.97 9.07
3. GATE E2 .270 −−− 6.86 −−−
4. GATE E3 .346 .350 8.79 8.89
5. SOURCE F .025 BSC 0.64 BSC
b1 .164 .170 4.17 4.32
c1 .007 .011 .18 .28
r1 .063 .068 1.60 1.73
CASE 1484 - 02 e .106 BSC 2.69 BSC

ISSUE B
aaa .004 .10

TO - 272 WB - 4
PLASTIC
MRF5S19060NBR1(MBR1)

MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1

RF Device Data
Freescale Semiconductor 11
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MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1

Document Number: MRF5S19060N RF Device Data
Rev. 4, 8/2005
12 Freescale Semiconductor