Substrate Integrated

Waveguide Filters
Xiao-Ping Chen and Ke Wu

B
ecause of the inherent structural flexibility in coupling design and topologi-
cal arrangement, substrate integrated waveguide (SIW) filter topologies enjoy
better out-of-band frequency selectivity and/or in-band phase response with
the allocation of finite transmission zeros (FTZs). In the first article in this
series, basic design rules and fundamental electrical characteristics have been
presented that indicate the superior performances of SIW structures and their filter ap-
plications. Advanced design techniques and innovative structure features have recently
been reported in a large number of publications. They include cross couplings realized by
physical and nonphysical paths and SIW filters with dual-mode or multimode techniques.
Miniaturization-enabled techniques including low-temperature cofired ceramic (LTCC)
technology have been developed and applied to the development of SIW filters to reduce
the size for low-gigahertz applications using nontransverse electromagnetic (non-TEM)
modes. Wideband SIW filters, multiband SIW filters, and reconfigurable SIW filters have
also been reported by various research groups. This article reviews these advanced and
innovative SIW filter technologies, and related examples are presented and discussed.

Xiao-Ping Chen and Ke Wu ([email protected]) are with the Poly-Grames Research Center, Department
of Electrical Engineering, Ecole Polytechnique (University of Montreal), Center for Radiofrequency
Electronics Research of Quebec, Montreal, Quebec H3T 1J4, Canada.
Digital Object Identifier 10.1109/MMM.2014.2332886
Date of publication: 8 September 2014

image licensed by ingram publishing

September/October 2014 1527-3342/14©2014IEEE 121

 yield the same magnitude but opposite phase, they
1 Source 2 3 would cancel each other out, and an FTZ on the imagi-
nary axis is then produced. However, positive and nega-
tive couplings must be simultaneously realized for the
opposite phases. On the other hand, if two signal paths
6 Load 5 4 generate the same magnitude and phase, an FTZ on the
: Nonresonant Node real axis is then produced. In this case, all of the cou-
(NRN)
plings can have the same sign.
: Resonator
The second method involves FTZs on the imagi-
(a) (b) nary axis that can be extracted to realize bandstop
0 resonators. In an extracted-pole filter, it is not neces-
-10
sary to simultaneously realize both types of coupling
because the FTZ on the imaginary axis is produced by
S21 and S11 (dB)

-20 the bandstop resonator that can also produce a trans-

-30 mission pole in the passband. In addition, every FTZ
can be tuned independently by changing the resonant
-40
frequency of the bandstop resonator.
-50 SIW technology, a part of the family of substrate
Simulation S11 Measurement S21 integrated circuits, is very suitable for the realization
-60
Simulation S21 Measurement S11 of the above-mentioned filter topologies due to its
-70
30 31 32 33 34 35 36 37 38 39 40 inherent flexibility for the implementation of multiple
Frequency (GHz) paths and phase correlations and controls for FTZs. A
(c) fourth-order, linear-phase filter with two FTZs that
are symmetrically located along the real axis was pro-
3.0 posed and realized by a single-layer printed circuit
Simulation board (PCB) process based on an SIW platform in [1].
2.5
In this case, all of the direct coupling and cross cou-
Group Delay (ns)

Measurement
2.0 pling between the first SIW cavity and fourth SIW cav-
ity were realized by a section of SIW evanescent mode
1.5
for positive coupling. The variation of in-band group
1.0 time delay of the filter was smaller than 0.5% over 50%
of the passband around the center frequency. Multilay-
0.5
ered topologies provide more freedom in the design of
0.0 coupling paths and control mechanisms.
34.2 34.5 34.8 35.1 35.4 35.7 36.0 To obtain FTZs on both the imaginary axis and the
Frequency (GHz) real axis using only magnetic coupling, [2] presented
(d) a sixth-order Ka-band self-equalized pseudoellipti-
cal SIW filter, the geometric configuration, structural
Figure 1. The (a) geometric configuration and (b) structural topology, and frequency responses of which are all
topology. (c) and (d) The frequency responses of a sixth-order shown in Figure 1. Two bandstop SIW cavity reso-
self-equalized pseudoelliptical SIW filter [2]. nators, 1 and 6, are responsible for the generation of
two FTZs on the imaginary axis, while the cross cou-
SIW Filters with FTZs pling between SIW cavity resonators 2 and 5 are for
Filters with FTZs located on the imaginary axis or sym- two FTZs that are symmetrically located on the real
metrically on the real axis or in all four quadrants of axis. The filter was synthesized and designed using an
the complex frequency plane are known to have bet- extracted-pole technique [3] and was fabricated on a
ter out-of-band frequency selectivity and/or in-band low-cost single-layer PCB substrate.
phase response. The FTZs on the imaginary axis of the On the single-layer SIW platform, where only mag-
complex frequency plane will lead to high selectivity netic iris coupling can be realized, it is a rather chal-
performance and excellent stopband characteristics, lenging task to simultaneously design positive and
while FTZs on the real axis or in all the four quadrants negative coupling networks for the generation of FTZs
are used for achieving a linear phase response in the on the imaginary axis. A novel structure using a bal-
passband. There are two methods that have been used anced microstrip line with a pair of metalized via-holes
to produce FTZs. The first method makes use of cross placed between transverse electric (TE)101-mode-based
couplings with nonphysical couplings by higher-order SIW cavity resonators 1 and 4 to invert the phase of sig-
modes or physical coupling structures to produce mul- nal was presented for the first time in [4]. A mixed cou-
tiple paths for signal flow. If two different signal paths pling, including both positive and negative couplings,

122 September/October 2014

which cancel each other out, is produced. The structure
can be optimized to ensure that the negative coupling L R4 R3
is stronger than its positive counterpart, and a small
amount of the negative coupling can be canceled out
by tuning the width of the magnetic postwall iris. This S R1 R2
structure is well suited for SIW implementation and Positive Coupling
provides accurate negative coupling with an inductive Negative Coupling
postwall iris. Figure 2 shows the geometric configura- (a) (b)
tion, structural topology, and frequency response of a
0
fourth-order, cross-coupled SIW filter with the negative
coupling structure; coupling between the input and the -10
output may be noted.

S21 and S11 (dB)

-20
In [5] and [6], a balanced microstrip line with a pair
of metalized via-holes was replaced by a section of -30
grounded coplanar waveguide (CPW) for the realiza- -40
tion of electrical coupling. To avoid a spurious reso-
-50
nance induced by the grounded CPW line that was
Full-Wave Simulation
too close to the passband, the coupling coefficient was -60
Measurement
controlled by the linewidth rather than the line length. -70
Another method to realize negative coupling on the 17 18 19 20 21 22 23 24
single-layer SIW platform with only a magnetic iris is Frequency (GHz)
to use a higher-order resonance mode of the SIW cavity (c)
resonator [7]–[10], [13]. If the magnetic iris is properly
located, the TE102 resonant mode can be used to obtain Figure 2. The (a) geometric configuration, (b) structural
the 180° phase change, which is equivalent to the gen- topology, and (c) frequency responses of a fourth-order
eration of negative coupling in other signal paths with cross-coupled SIW filter with negative coupling structure
a TE101 resonant mode. and source–load coupling [4].
In [13], a Ka-band fourth-order boxlike filter with
one transmission zero on the left or right side of the Ka-band satellite ground terminal receiver applica-
passband was presented. The TE102 mode resonance tions. Every singlet produces a transmission pole in the
excited in one SIW cavity is used for the transforma- desired passband of the filter and a transmission zero
tion between 0° and 180° phases of coupling on a sin- at the defined location for yielding sufficient stopband
gle-layer SIW, where only a magnetic postwall iris can attenuation. Figure 4 shows photographs and responses
be implemented for positive coupling. Figure 3 shows of two different fourth-order SIW filters, one using three
the geometric configuration, structural topology, and oversized TE101/TE301 SIW cavities and one oversized
frequency responses of the proposed SIW filter. Note TE101/TE201 SIW cavity and the other using two over-
that the FTZ can move from one side to the other of sized TE101/TE301 SIW cavities and two oversized TE101/
the passband only when the self-coupling is changed TE201 SIW cavities. The Ka-band of 29.5–30 GHz needs
without the change of intercoupling. The measured to be isolated from the K-band passband operation for
in-band return loss of the two filter prototypes with satellite ground terminal applications. The second filter
a center frequency of 35 GHz and absolute bandwidth exhibited a measured in-band insertion loss of 0.8 dB, a
of 1.3 GHz is below -14 dB, while the measured mini- stopband attenuation (rejection) better than 40 dB over
mum in-band insertion loss is about 1.2 dB. a wide frequency range of 23.94–31.48 GHz, while the
Cross coupling can also be realized by a nonphysical attenuation (rejection) in the targeted transmit band of
method, in which the signal path is generated by a spu- 29.5–30 GHz is better than 52 dB. Note that to effectively
rious resonant mode. If the main resonance and spuri- measure the stopband rejection, appropriately placed
ous resonance are properly chosen, all of the coupling absorbers are used to reduce the spurious coupling
paths can be realized by a magnetic iris, enabling the between two launching pins when a universal test fix-
generation of FTZs [11]. More importantly, nonphysical ture (Wiltron 3680K) is used. In Figure 4(b), the differ-
cross coupling can be tuned not only by the size of the ence between the measured S 11 and the simulated S 11 at
coupling structure but also by the resonant frequencies 27.5–30 GHz may be caused by the absorbers.
of spurious resonance. Therefore, the FTZs can be made Because of the inherent structural flexibility of SIW
near the passband for generating a high selectivity or far technology, some cross-coupled filter topologies that
away from the passband for achieving a wide stopband. are difficult or even impossible to physically realize
In [12], an oversized SIW TE101/TE301 cavity or TE101/ in metallic waveguide can be easily implemented on
TE201 cavity was used as a basic unit that may be called an SIW platform [13]–[16]. In [13], two Ka-band fourth-
“singlet” to realize a direct-coupled SIW filter for order SIW filters were proposed with two transmission

September/October 2014 123

 zeros on the left or right side of the passband, respec- sion zeros on the right side of the passband operate
tively, due to the diagonal coupling. All the coupling with the TE101 mode. Both filters are directly excited by
between resonators is realized by magnetic postwall a 50-X conductor-backed CPW with coupling slots so
irises that provide positive coupling. For the filter of that a thick substrate can be used for the loss reduc-
two transmission zeros on the left side of the passband, tion related to the top and bottom metals. In [14], an
the TE101 mode is used for the first or third SIW cav- SIW transversal bandpass filter using a modified dou-
ity resonator, while the TE102 resonant mode is excited blet with high selectivity was presented. The modified
in the second or fourth SIW cavity for the equivalent doublet contains two resonators that are not coupled to
realization of a negative coupling in signal path 1–3. each other. The source and load are directly coupled to
All of the resonators in the filter with two transmis- generate two transmission zeros. By changing the sign

50-X Conductor-Backed
Metalized Via Holes
Coplanar Waveguide
(CBCPW) 2 4

+ + Load
-

Source 1 3
Substrate
50-X CBCPW
Metal

(a) (b)
0
-1.0
Measured S11 -1.5
-2.0
-10
Simulated S11
-2.5
-3.0
Measured S21
.0 .4 .8 .2 .6 .0
-20 34 34 34 35 35 36
Simulated S21

-30
S21 and S11 (dB)

-40

-50

-60

(continued)
-70

-80
30 32 34 36 38 40
Frequency (GHz)
(c)

Figure 3. The (a) geometric configuration, (b) structural topology, and (c) frequency responses of the first prototyped fourth-order
cross-coupled SIW filter with negative coupling structure and source–load coupling [13]. (d) The frequency responses of the second
prototyped fourth-order cross-coupled SIW filter with negative coupling structure and source–load coupling [13]. (continued)

124 September/October 2014

of one coupling coefficient and detuning the resonators Dual-Mode SIW Filters
in the modified doublet, two transmission zeros can be Dual-mode filters can be made in various technologies
simultaneously placed below or above the passband, including planar microstrip line and metallic wave-
or one can be placed below and the other above the guide schemes. The primary reason for developing
passband. Figure 5 shows the geometric configuration such filters is to reduce the filter size by at least 50%
and structural topology as well as the simulated and compared with cascaded resonator filters while mak-
measured frequency responses. Since the first electri- ing transmission loss as low as possible. Based on the
cal resonance is realized by the TE201 mode, both the all-inductive dual-mode filters presented in [17] and
coupling between the source and the second resonator [18], a dual-mode SIW filter directly excited by a 50-X
and the source–load coupling are negative. One FTZ microstrip line was proposed for the first time in [19].
is placed below and the other above the passband. In This work was then extended in [20]–[22] by the analy-
[15], a sixth-order SIW filter composed of two cascaded sis and synthesis of a schematic topology.
extended doublets was proposed. Each extended dou- An oversized SIW cavity with two degenerate modes,
blet consists of a main doublet with an additional res- TE102 and TE201, is used as the basic building block with
onator grown in one of the branches. The source and an inline input/output structure. Two consecutive basic
the load are coupled to both branches of the doublet to blocks are coupled by a section of evanescent SIW. The
generate the required two transmission zeros. The two source/load is simultaneously coupled with two elec-
consecutive building blocks are coupled by an inverter trical resonances within the first/last oversized SIW
between two nonresonating nodes (NRNs). In [16], four cavity. Each electrical resonance in one oversized SIW
FTZs were generated in a third-order cross-coupled cavity is coupled with two electrical resonances in the
SIW filter using a frequency-variant mixed coupling other oversized SIW cavity without intercavity cou-
between the source and the load. pling. An inductive post placed where the maximum

0
.0
-1
.5 Measured S11
-1
.0
-10 -2 Simulated S11
.5
-2
.0 Measured S21
-20 -3 34.0 34.4 34.8 35.2 35.6 36.0
Simulated S21

-30
S21 and S11 (dB)

-40

-50

-60

-70

-80
30 32 34 36 38 40
Frequency (GHz)
(d)

Figure 3. (continued) The (a) geometric configuration, (b) structural topology, and (c) frequency responses of the first prototyped
fourth-order cross-coupled SIW filter with negative coupling structure and source–load coupling [13]. (d) The frequency responses
of the second prototyped fourth-order cross-coupled SIW filter with negative coupling structure and source–load coupling [13].

September/October 2014 125

 R1
S L
R2
Positive Coupling
Negative Coupling

(a) (b)
0
0
-10 S11 Measured
-10 S21 Measured
-20 S11 Simulated

S Parameters (dB)
-30 S21 Simulated
S11 and S21 (dB)

-20
-40
-30
-50
-60 Simulated S11 -40
Simulated S21
-70 -50
Simulated S11
-80 Simulated S21
-60
-90 12 13 14 15 16 17 18
15.0 17.5 20.0 22.5 25.0 27.5 30.0 32.5 35.0 Frequency (GHz)
Frequency (GHz) (c)
(a)
Figure 5. The (a) geometric configuration, (b) structural
topology, and (c) frequency responses of a fourth-order
cross-coupled SIW filter with negative coupling structure
and source–load coupling [14].

S L
0
a
-10
Degenerate Mode
-20
-30 Spurious Resonant Mode
S11 and S21 (dB)

-40 (a) (b)

-50
FTZ on Left Side of the
-60 Simulated S11 Passband
-70 Simulated S21 FTZ on Right Side of the
Passband
-80 Simulated S11
Simulated S21
-90
WS21S

15.0 17.5 20.0 22.5 25.0 27.5 30.0 32.5 35.0

Frequency (GHz)
(b)

Figure 4. Photographs and responses of two different

fourth-order SIW filters with nonphysical cross coupling
using (a) three oversized TE101/TE301 SIW cavities and one
Frequency
oversized TE101/TE201 SIW cavity and (b) two oversized
TE101/TE301 SIW cavities and two oversized TE101/TE201 SIW (c)
cavities [12]. Figure 6. The (a) geometric configuration, (b) structural
topology, and (c) frequency responses of a basic building block
electric field is located can be used to tune the resonant for a dual-mode SIW circular cavity filter [26].
frequencies of degenerate modes. This can be used to
compensate for fabrication error and tolerance. There- [23]–[25], no additional FTZs can be obtained due to the
fore, an inline SIW filter with pseudoelliptical response intracoupling. In addition, nonphysical cross coupling
can be obtained. Although the metallic post or slot line for additional FTZs can be generated when the input/
can be used to perturb the field distribution of the two output is perpendicular to each other [11]. Note that
degenerate modes for the generation of intracoupling there is no coupling between the source and the load.

126 September/October 2014

 Another family of dual-mode SIW filters is based on
the SIW circular cavity where there are two polarization- Input Port
degenerated modes TM110 [26]–[28]. Similar to the case Metal 1
Substrate 1
of an SIW rectangular cavity, an oversized SIW circular
cavity with two polarization degenerate modes TM110 is Metal 2
used as the basic building block; the geometric configu-
ration, structural topology, and frequency responses of Cavity Substrate 2
which are shown in Figure 6. Note that the FTZs distant Metal 3
from the passband are generated due to the nonphysical
cross coupling of spurious resonant modes [11]. The FTZ Cavity Substrate 3
near the passband can move from one side to the other
Metal 4
side of the passband when the resonant frequencies of
degenerate modes are changed. This can be realized by Substrate 4
changing the cavity from a circular shape to an ellipti- Metal 5
cal shape with more design freedom. However, the FTZ Output Port
(a)
distant from the passband is always on the right side, and
its position can be changed by changing the input/out- S 1 4 L
put coupling angle a [11]. The basic building block can be
cascaded to design higher-order pseudoelliptical filters. 2 3
In [29], a canonical folded topology was realized using
an LTCC process based on two dual-mode SIW circular
cavities that are excited by a 50-X microstrip through
coupling slots. Intercoupling is implemented by a cross-
(b)
shaped slot. Figure 7 shows the geometric configura-
tion, structural topology, and frequency responses. Note 0
that the source/load is coupled with only one electrical -5
resonance and that each electrical resonance in one dual- -10
mode SIW circular cavity is coupled with only one electri-
-15
S21 and S11 (dB)

cal resonance in the other dual-mode SIW cavity through

-20
the cross-shaped slot. By letting two pairs of coupling
vias used for coupling inside the cavity perpendicular to -25
each other, the field of the first and fourth resonators can -30
have opposite direction. Therefore, negative nonadjacent -35
coupling between the first and fourth resonators can be -40
produced in the proposed filter structure. Measurement
-45 EM Simulation
-50
Wideband SIW Filters 28.0 28.5 29.0 29.5 30.0 30.5 31.0 31.5 32.0
Wideband filters have been designed and realized with Frequency (GHz)
TEM mode transmission lines due to their dispersionless, (c)
broadband, and single-mode performance. As mentioned
earlier, SIW structures support only the transmission or Figure 7. The (a) geometric configuration, (b) structural
propagation of TE modes that makes the design of wide- topology, and (c) frequency responses of a dual-mode SIW
band SIW filters easier and more feasible without the circular cavity filter based on an LTCC process [29].
design consideration of parasitic TM modes. To increase
the coupling for wideband applications, a zigzag filter an alternative method to design a wideband SIW filter
topology with 28% bandwidth for European ultrawide- is to use the high-pass characteristic of an SIW and the
band (UWB) applications was proposed in [30]. Additional bandstop behavior of planar periodic structures, such as
controllable cross-coupling networks are realized by both uniplanar compact photonic bandgap, uniplanar compact
physical and nonphysical methods to achieve sharper defect ground structure, and CPW periodic structures [31].
responses and more flexible tuning of the transmission Very compact wideband filters with a relative bandwidth
zeros. A fast and accurate full-wave electromagnetic anal- of more than 50% can be obtained through the inherent
ysis method based on the boundary integral-resonant integration of an SIW and a planar structure within the
mode expansion technique was proposed and developed same processing technique and on the same substrate. Fig-
to design the filter. Figure 8 shows the geometric configu- ure 9 shows the geometric configuration and responses
ration, structural topology, and frequency response of the of the SIW-CPW filter. In addition, an SIW also can be
filter. With the consideration that a realizable coupling cascaded with a planar low-pass filter for the generation
is limited by the physical size of a coupling structure, of a UWB frequency response from 3.1 to 10.6 GHz [33].

September/October 2014 127

 very useful for the case where the
passbands are close to each other.
Multiband filters with Cheby-
shev or pseudoelliptical frequen-
cy responses were proposed on
an SIW platform in [34] for the
(a)
first time. Bandstop SIW cav-
2 4 6 ity resonators are used here to
generate the transmission zeros
to split the single passband into
S 1 3 5 L
two or three subpassbands. The
filters, consisting of the invert-
(b) er-coupled resonator sections
0 with side-by-side horizontally
oriented SIW cavities coupled
by postwall irises, are analyti-
-10
cally synthesized from the gen-
WS11S eralized low-pass prototypes
-20
having Chebyshev or quasi-
elliptical responses. The filters
-30 are directly excited using 50-X
WSS(dB)

WS12S
microstrip lines. Figure 10 shows
-40 the geometric configuration and
frequency responses over the
-50 Open Decoupling Walls (Simulated) K-band of the dual-/triple-band
Open Decoupling Walls (Measured) SIW filters. In [35] and [36], the
-60 Closed Decoupling Walls (Simulated) inverter-coupled resonator sec-
Closed Decoupling Walls (Measured) tion was modified for a novel
-70 triple-passband filter. Multiple
5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 10.5 resonant modes in an SIW cav-
Frequency (GHz) ity produced by an LTCC process
(c) were utilized to generate multi-
band responses that are distant
Figure 8. The (a) geometric configuration, (b) structural topology, and (c) frequency from each other [37], [38]. The fre-
responses of a wideband SIW filter in zigzag topology [30]. quency bands are controlled by
adequately choosing an appro-
Notch bands for the removal of interferences from the priate geometric shape for the SIW cavity resonators.
existing systems can be generated using bandstop reso- The desired coupling coefficients and external quality
nators [32] or open stubs [33]. factors for both bands are realized by the positions of
open slots and feeding probes.
Multiband SIW Filters
Two types of techniques are often used to generate dual- Reconfigurable SIW Filters
passband or multiband responses for multifunctional Reconfigurable filters are essential for future multifunc-
system applications. The first method is to use novel tional radio and radar systems such as smart and cogni-
resonant structures with a great degree of design free- tive radio and radar techniques across the commercial,
dom, such as stepped-impedance or dual-behavior reso- defense, and civilian sectors to control and better use the
nators, because their two dominant resonances coincide RF spectrum. These techniques can eliminate interfer-
with the two center frequencies of two designated pass- ence while preserving good dynamic range under any
bands by adjusting their geometric parameters. The res- signal receiving condition. Tunable resonators are a cru-
onators are placed so that appropriate coupling in the cial building block in the design and realization of tun-
structure can be established. This method is very suit- able RF and microwave filters. In [39], an original tuning
able for the case where the passbands are distant from solution was proposed based on the insertion of vertical
each other in frequency. capacitive posts integrated within SIW cavities. One ex-
The other method is to use transmission zeros that tremity of each post is connected to a floating metallic
are produced by cross-coupling or bandstop resonators ring, located on the substrate supporting the SIW cav-
to split a single passband into dual passbands or mul- ity. Frequency agility is obtained once the metallic ring
tibands based on a single-filter circuit. This method is is connected to the ground plane by short-circuiting

128 September/October 2014

 (a) (b)

0
-10
(a)
-20

S21 and S11 (dB)

Measured Results Simulated Results -30
0
-40
-10
-50
-20 -60
Measurement
-30 -70 Simulation
dB

-40 -80
18 19 20 21 22 23 24
-50 Frequency (GHz)
(c)
-60

-70 0
-10
4 6 8 10 12 14 16 18 20
-20
S21 and S11 (dB)

Frequency (GHz)
(b) -30
-40
Figure 9. The (a) geometric configuration and (b) -50
frequency response of a wideband SIW-CPW filter [31]. -60 Measurement
Simulation
-70
the corresponding annular slot using surface actuators. -80
Such a combination of cavity and planar activation leads 18 19 20 21 22 23 24
to reconfigurable filters with high Q values and simpli- Frequency (GHz)
fied tuning control conditions. More capacitive posts can (d)
be used to increase frequency states. Figure 10. The geometric configuration of (a) dual-band
A novel tunable second-order SIW filter was imple- and (b) triple-band SIW filters as well as (c) and (d) their
mented on three-layer Rogers RT/duroid substrate using frequency responses [34].
p-i-n diode switching elements [40]; other switching
techniques such as RF microelectromechanical sys- been demonstrated on a low-cost substrate showing a
tems (MEMS) could be used. The tuning mechanism tunable center frequency between 2.64 and 2.88 GHz
is obtained by connecting or disconnecting perturbing with 1.27–3.63-dB insertion loss across the tuning range
via posts to/from the top metal layer of the cavity. The [43]. The IIP3 of +24 dBm has been measured for a bias
tuning location where subsequent perturbing vias are voltage of 5 V and a two-tone separation 3 f of 50 kHz.
placed is empirically analyzed, and an optimum tuning The 1-dB compression point of the filter at the same bias
location is obtained. Figure 11 shows the geometric con- voltage is only +10 dBm. In [44], switchable planar p-i-n
figuration and measured responses of a reconfigurable diodes are used to realize the digitally tuned SIW filter.
SIW filter. The filter provides six states ranging from The center frequencies of three different states are 6.17,
1.55 to 2.0 GHz (25% tuning). The fractional bandwidth 5.83, and 5.58 GHz, with insertion loss varying between
ranges from 2.3% to 3.0% with an insertion loss less than 1.6 and 2.4 dB. The equal ripple fractional bandwidth is
5.4 dB and a return loss greater than 14 dB over the entire reduced from 3.6% to 2.6% along the tuning range.
tuning range. Another method to tune the SIW cavity is to embed
Based on the proposed combline resonator in SIW tech- a frequency agile material into an SIW cavity. A spe-
nology [41], a low-loss tunable resonator based on a com- cific switchable post constructed using plasma material
bline SIW cavity loaded with gallium arsenide varactor is (argon) was introduced in the SIW cavity [45]. The plasma
presented [42]. The 2.6–3.1-GHz tunable center frequency conductivity can reach a high value when the medium is
was obtained with a Qu between 180 and 70, a capacitance excited by strong dc voltage (“on” state). Whereas for the
variation between 0.25 and 1.25 pF. A two-pole filter has “off” state, the plasma behaves like a vacuum. Therefore,

September/October 2014 129

 RF In
Layer 1 S 1 4 L
+ +
2 + 3
P P'
Through
Vias (a) (b)

Layer 2 0
-5
Top Vias Wall Vias Layer 3
(GND) -10
RF Out

S-Parameters (dB)
(a) -15
-20
PIN Diode +
P Biasing P' -25
Layer 1 RT/Duroid
Layer 2 Top Via -30
0.635 mm
S11 (Simulated)
Through Via RT/Duroid -35
S21 (Simulated)
Wall Via Wall Via 2.54 mm S11 (Measured)
Layer 3 -40
S21 (Measured)
(b) -45
50 52 54 56 58 60 62 64 66 68 70
0
Frequency (GHz)
-10 (c)

-20 Figure 12. The (a) geometric configuration, (b) structural

topology, and (c) response of an SIW filter based on LTCC [67].
-30

-40 SIW filters [41], [56], [57], and so-called half-mode SIW
S11 filters [58]–[60]. However, these techniques may deterio-
-50 S21 rate the Q u of an SIW resonator, which leads to high in-
1.4 1.6 1.8 2.0 2.2 band insertion loss of the filter that, in turn, limits the
Frequency (GHz) applications of SIW filters in engineering. This is because
(c) the field singularity known for conventional planar lines
may partially appear in the filter circuits.
Figure 11. (a) and (b) The geometric configuration and (c) An effective method to miniaturize an SIW filter is
measured frequency response of a reconfigurable SIW filter [40]. to utilize low-loss substrates that have high permittiv-
ity, such as alumina ceramic substrates, by using the
plasma acts as a switchable metallic post that can change miniature hybrid microwave integrated circuits process
the resonant frequency of an SIW cavity. or the photoimageable process [61]–[64] or on a silicon
In [46], a dielectric post exhibiting dispersion provides substrate by means of the MEMS process [65]. The low-
electromagnetic agility and adaptability for the filter by loss high-permittivity substrates can be found in com-
introducing a vertical material perturbation. Low-loss mon fabrication techniques such as alumina ceramic
dispersion of nanoparticles with variable concentrations substrates using the miniature hybrid microwave inte-
is used as the enabling mechanism for electromagnetic grated circuits process or the photoimageable process
agility and adaptation. The post diameter determines [61]–[64]. However, the best method for the miniaturiza-
the amount of perturbation achieved. However, it is still tion of SIW filters uses multilayer circuit processes with
a very challenging task to simultaneously tune the reso- three-dimensional integration features. LTCC processes
nant frequency of an SIW cavity and coupling between with the substrates of high permittivity and a nearly
two SIW cavities for constant absolute bandwidth or arbitrary number of layers are cost effective, and, most
relative bandwidth during the tuning process. importantly, almost all of the filter topologies can be
realized with great freedom through the LTCC process.
Arts of Miniaturization for SIW Filters The first SIW filter based on a multilayer PCB sub-
An SIW filter is still bulky for low-microwave-frequency strate was proposed in [66]. A C-band fourth-order SIW
applications because of their strong frequency depen- filter with a canonical folded topology for an elliptical
dence and non-TEM mode operation. Various techniques frequency response was designed and fabricated. The
have been proposed to reduce the size of an SIW filter, required negative coupling between resonators 1 and 4
such as SIW filters loaded with complementary split-ring is easily realized by adding the square slots at the cen-
resonators [47]–[51], folded SIW filters [52]–[55], combline ter of the SIW cavities, while inductive postwall irises

130 September/October 2014

 ration and structural topology and frequency response
Port 1 Port 2 over the Ku-band.
Metallic Vias Slot Top Metal Layer Along with the realization of SIW filters based on
different topologies using the LTCC process [70]–[76],
Resonator 1 Resonator 4 techniques for further size reduction of SIW filters were
Middle Metal Layer
studied. These techniques include dual-mode SIW fil-
Resonator 2 ters on LTCC [77], [78], folded SIW filters on LTCC [79]–
Resonator 3
Bottom Metal Layer [81], and evanescent-mode SIW filters on LTCC [82]–[86].
(a) Although the evanescent-mode SIW filter has a size
S 1 4 L reduction of more than 50% and a higher spectral sepa-
+ ration to the next spurious passband, the in-band inser-
- +
2 + 3 tion loss is increased because the Qu value is reduced.
The filter is very sensitive to fabrication tolerances,
(b)
especially to the compression or shrinking effects of the
0 LTCC layers before and during the cofiring, because the
-10 electric field is concentrated above the capacitive stubs
in only one thin LTCC layer [86].
-20
S-Parameters (dB)

-30 Conclusions
Advanced and innovative SIW filter structures are
-40
reviewed and discussed in the second of this three-part
-50 series with regard to various types of structure realiza-
Measured
-60 Simulated tions and design approaches. Physical or nonphysical
coupling can be used for the realization of cross cou-
-70
13.5 14.0 14.5 15.0 15.5 16.0 16.5 pling in SIW filters with FTZs. Circular or square cavi-
Frequency (GHz) ties can be easily designed for dual-mode SIW filters.
(c) Techniques for wideband or multiband SIW filters were
also discussed together with reconfigurable SIW filter
Figure 13. The (a) geometric configuration, (b) structural platforms. Loaded SIW cavity and folded SIW cavity
topology, and (c) response of an SIW filter based on LTCC [69]. can be used to reduce the filter size for low-gigahertz
applications. LTCC technology may present an effective
for positive coupling are made between two SIW cavi- method to miniaturize SIW filters with good Qu values.
ties in the same layer. Rectangular slots at the edge of
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