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Bec MCQ

1. A zener diode has one pn junction. 2. A zener diode is commonly used as a voltage regulator by taking advantage of its reverse breakdown characteristic. 3. A zener diode has a higher doping level compared to a normal diode, which allows it to breakdown at a lower reverse voltage and exhibit the zener effect.
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100% found this document useful (1 vote)
209 views16 pages

Bec MCQ

1. A zener diode has one pn junction. 2. A zener diode is commonly used as a voltage regulator by taking advantage of its reverse breakdown characteristic. 3. A zener diode has a higher doping level compared to a normal diode, which allows it to breakdown at a lower reverse voltage and exhibit the zener effect.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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BEC- MCQ - QB- FYCM

1. How many pn junction a zener diode has?

• one pn junction • two pn junctions • three pn junctions none of the above

2. Identify the correct application of zener diode ?

• an amplifier • a voltage regulator • a rectifier a multivibrator

3. The As compared to crystal diode ,what is the doping level in a zener diode?

• the same as • less than • more than none of the above

4. In regulator circuit, what biasing method is used in case of zener diode ?

• reverse • forward • either reverse or forward none of the above

5. For zener as a volage regulator ,which characteristics is considered ?

• forward • reverse • both forward and reverse none of the above

6. In the breakdown region, a zener diode behaves like a …………… source.

• constant voltage • constant current • constant resistance none of the above


7. A zener diode may damaged if it…………..

• is forward biased • is reverse biased • carries more than rated none of the above
current

8. A series resistance is connected in the zener circuit to………..

• properly reverse bias the zener • protect the zener • properly forward bias the none of the above
zener

9. A zener diode is …………………. device

• a non-linear • a linear • an amplifying none of the above

10. A zener diode has ………….. breakdown voltage

• undefined • sharp • zero none of the above

11. In a Zener diode with a high breakdown voltage has ………………….

• Lightly doped P and N • P or N is lightly doped • Heavily doped P and N None of these

12. In Zener diode, the Zener breakdown takes place

• Below 6 V • At 6 V • Above 6 V None of the above


13. A Zener diode when biased correctly ……..

• a. Never overheats • b. Has a constant voltage • c. Acts as a fixed resistance d. Has a constant current passing
across it through it

14. In Zener diode, the breakdown is due to Zener, has a doping ………

• Lowest • Moderate • High Low

15. In a Zener diode …………..

• Negative resistance • Forward voltage rating is • Sharp breakdown occurs at All of the above
characteristic exists high a low reverse voltage

16. A Zener diode, having breakdown voltage equal to 15 V, is used in a voltage regulator circuit shown in the figure. The current through the diode is …. …

• 10 mA • 15 mA • 20 mA • 5 mA

17. How is the breakdown region set during the manufacturing of the diode?
• By controlling the size of the • By controlling the doping of • By managing the biasing of All the above
diode the diode diode

18. Depletion region in pn junction behaves as ………………

• Semiconductor • Insulator • Conductor High resistance

19. Depletion region have………………

• Free holes • Free electrons • Immobile charge carriers All of the above

20. When LED is forward biased ,it emits light .The colour of emitted light depends on ……..

Construction of LED, that is physical Number of available carriers Type of semiconductor material Number of recombination taking
dimensions used place

21. Which of the following is an advantage of LED ?

Long life Fast on-off switching Low operating voltage All of the above

22. The typical value of power consumption of LED is ……

A.Around 10 mW B.In between 15 mW and 20 mW • C.In between 30 mW and D.In between 35 mW and 50 mW
40 mW

23. When LED is forward biased, it emits light due to ……


• A. Recombination of carriers • B. Light generated in • C.Light produced by D. All of the above reason
breaking the covalent bonds collisions

24. What is the function of Resistor in the given circuit?


To protect the LEDs from being To make sure that only one LED To make sure that a current flows To switch on the current in each
damaged by a large current. lights in each circuit. around the circuit. circuit

25. In the circuit shown, which of the LEDs will glow?

None of the LEDs will light. A and C only. All of the LEDs will light. B and D only.
26. In which of the following devices is there an energy conversion from electrical to light energy?

Light dependent resistor Light emitting diode Diode Battery

27. Which one of the following is NOT an advantage of using a LED over using a bulb?

LEDs can work at high voltages LEDs use very small current LEDs are cheaper LEDs last longer

28. Which of following statement is not applicable to active devices?

Active devices inject power to the Active devices are capable of Active devices cannot control the An external power is required to
circuit providing power gain current (energy) flow within the start basic operation of active
circuit devices
29. Find odd man out.

Resistor Switch Transformer Diode

30. Find odd man out.

Diode IC Inductor Transistor

31. If the PIV rating of centre tapped rectifier is ____________.

Vm 2Vm Vm/П 3Vm


32. The average value of a half-wave rectified voltage with a peak value of 200 V is ______.

(a) 63.7 V (b) 127.3V (c) 141 V (d) 0V

33. When a sinusoidal voltage is applied to the input of a half-wave rectifier having frequency = 60Hz, the output frequency is _____________.

(a) 120 Hz (b) 30 Hz (c) 60 Hz (d) 0 Hz

34. The peak value of the input to a half-wave rectifier is 10 V. The approximate peak value of the output is ________.

(a) 10V (b) 3.18V (c) 10.7V (d) 9.3V

35. What is the average value of a full-wave rectified voltage with a peak value of 75 V is ______.

(a) 53 V (b) 47.8V (c) 37.5V (d) 23.9V

36. When a 60 Hz sinusoidal voltage is applied to the input of a full-wave rectifier, the output Frequency is ________.

(b) 120 Hz (b) 60 Hz (c) 240 Hz (d) 0 Hz

37. When the RMS output voltage of a bridge full-wave rectifier is 20 V, the peak inverse voltage across the diodes is (neglecting the diode drop)
________.
20V 40V 28.3V 56.6V
38. Line regulation is determined by ___________

load current zener current and load current changes in load resistance and changes in output voltage and
output voltage input voltage
39. Load regulation is determined by ___________

changes in load current and input changes in load current and changes in load resistance and changes in zener current and load
voltage output voltage input voltage current
40. If one of the diodes in a bridge full-wave rectifier opens, the output is _________

0V a half-wave rectified voltage one-fourth the amplitude of the a 120 Hz voltage


input voltage
41. Reverse current in silicon diode is in following range ___________.

  mA nA

42. If the required DC output voltage is 9V assuming ideal diodes the AC input voltage for HWR is________

9.99V 12.99V 16.99V 19.99V

43. Vz for different zener diode is different and decided by_____

applied battery voltage across diode zener current limiting resistor Ambient temperature and doping level during the
junction temperature manufacturing of zener diode
44. Forward characteristics of semiconductor diode is drawn between _________

Forward current Vs Forward voltage Forward current Vs temperature Temperature Vs Forward voltage None of the above

45. Zener diode is generally operated in its _______

only in reverse breakdown region reverse breakdown region as well sometimes in forward biased sometimes in reverse biased
as forward biased region region region
46. The cathode of a zener diode in a voltage regulator is normally_____

more positive than the anode more negative than the anode at +0.7V grounded

47. If a certain zener diode has a zener voltage of 3.6V, it operates in____

regulated breakdown zener breakdown forward conduction avalanche breakdown

48. Two types of reverse breakdown in a zener diode are_____

Avalanche and zener Avalanche and reverse Avalanche and forward charge and discharge

49. What is true about breakdown voltage in a zener diode?

It decreases when current increases It destroys the diode It equals the current times the It is approximately constant
resistance
50. An LED is forward biased. The diode should be ON, but no light is showing. A possible problem might be_____

The diode is open The series resistor is too small None, the diode should be off if The power supply voltage is too
forward biased high
51. Typically the maximum VF for an LED is between_____

0 to 1V 1 to 1.2V 1.2 to 3.2V 3.2 to 4V

52. The diode in a half wave rectifier conducts for ______ of input cycle.

0o 45o 90o 180o

53. The peak inverse voltage across a nonconducting diode in a bridge rectifier is approximately equals to ______

Half the peak secondary voltage Twice the peak secondary voltage The peak value of the secondary Four times the peak value of
voltage secondary voltage
54. A Light emitting diode ……………

emits lights when reverse biased emits light when forward biased senses light when reverse biased acts as a variable resistance

55. The data sheet for particular zener gives Vz = 10V at Izt = 500mA. Zz for this condition is____

50 Ω 20 Ω 10 Ω unknown
56. For a certain 12V zener diode a 10mA change in zener current produces a 0.1V change in zener voltage. The impedance for this current range
is________
1Ω 100 Ω 10 Ω 0.1 Ω

57. Ripple frequency of bridge rectifier is given as __________

100 Hz 50 Hz 25Hz 200Hz

58. In half wave rectifier step down transformer is used. It has following specifications:
Vin= 220V ,50 Hz, N1:N2= 11:1. Find Vout of transformer
22V 18V 21V 20V

59. In full wave bridge rectifier , output of transformer is 12Vrms , calculate Vdc ?

12V 12.6V 10.8V 14.5V

60. In Full wave rectifier , Vdc= 12V. What will be ripple voltage at the output of rectifier?

4.8V 5.76V 8.36V 3.82V

61. A PN junction

Has low resistance in forward as well as Has high resistance in forward as Conducts in forward direction only Conducts in reverse direction only
reverse directions well as reverse directions
62. A PN junction is formed in a process which may be of

Diffused type Alloyed type The grown type Any of the above

63. A PN junction is said to be forward biased when

Positive terminal of the battery is Junction is earthed N-side is connected directly to the p- Positive terminal of the battery is
connected to P-side and the negative side connected to N-side and the
side to the N-side negative side to the P-side
64. In a PN junction when the applied voltage overcomes the ........ potential, the diode current is large, which is known as .............

Depletion, negative bias Reverse, reverse bias Resistance, reverse bias Barrier, forward bias

65. When a PN junction is reverse-biased

Holes and electrons tend to concentrate The barrier tends to break down Holes and electrons tend to move None of the above
towards the junction away from the junction

66. When PN junction is in forward bias, by increasing the battery voltage

Circuit resistance increases Current through P-N junction Current through P-N junction None of the above happens
increases decreases

67. For a PN junction diode, the current in reverse bias may be

Few miliamperes Between 0.2 A and 15 A Few amperes Few micro or nano amperes
68. In a PN junction with no external voltage, the electric field between acceptor and donor ions is called a

• Peak • Barrier • Threshold Path

69. A crystal diode has ………


• one pn junction • two pn junctions • three pn junctions none of the above


70. A crystal diode has forward resistance of the order of ……………

• kΩ • Ω • MΩ none of the above

71. If the arrow of crystal diode symbol is positive w.r.t. bar, then diode is ………….. biased.

forward • reverse • either forward or reverse none of the above

72. The reverse current in a diode is of the order of ……………….

• kA • mA • μA A

73. The forward voltage drop across a silicon diode is about …………………

• 2.5 V • 3V • 10 V 0.7 V
74. A crystal diode is used as ……………

• an amplifier • a rectifier • an oscillator a voltage regulator

75. The d.c. resistance of a crystal diode is ………….. its a.c. resistance

• the same as • more than • less than none of the above

76. An ideal crystal diode is one which behaves as a perfect ……….. when forward biased.

• conductor • insulator • resistance material none of the above

77. The leakage current in a crystal diode is due to …………….


• minority carriers • majority carriers • junction capacitance none of the above

78. If the temperature of a crystal diode increases, then leakage current ………..

• remains the same • decreases • increases becomes zero

79. If the doping level of a crystal diode is increased, the breakdown voltage………….

• remains the same • is increased • is decreased none of the above


80. The knee voltage of a crystal diode is approximately equal to ………….

• applied voltage • breakdown voltage • forward voltage barrier potential

81. When the graph between current through and voltage across a device is a straight line, the device is referred to as ……………….

• linear • active • nonlinear passive

82. A crystal diode is a …………… device

• non-linear • bilateral • linear none of the above

83. A crystal diode utilises …………….. characteristic for rectification

• reverse • forward • forward or reverse none of the above

84. When PN junction is in forward bias, by increasing the battery voltage

A. Circuit resistance increases B. Current through P-N junction C. Current through P-N junction D. None of the above happens
increases decreases

85. When a PN junction is reverse-biased

A. Holes and electrons tend to B. The barrier tends to break down C. Holes and electrons tend to D. None of the above
concentrate towards the junction move away from the junction

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