Cadmium Sulphide (CDS) Nanotechnology: Synthesis and Applications
Cadmium Sulphide (CDS) Nanotechnology: Synthesis and Applications
Over the past few years there has been sustained interest in the synthesis, characterization and
application of cadmium sulphide (CdS) nanostructures such as nanoparticles, nanowires, nanobelts,
nanospheres. The history of CdS, more recent advances in the chemistry and synthesis of CdS
nanostructures, and their application as nanoscale devices in diverse technology areas from elec-
tronics to targeted drug delivery is described. Although the focus is on CdS, the review provides an
excellent overview of the materials, methods, processes and promising solutions that are emerging.
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The driving force behind exploring the nano area in The as-synthesized CdS nanoparticles are usually pure,
the semiconductor perspective is to achieve higher perfor- structurally uniform with either cubic or hexagonal struc-
mance for functional (optical, chemical, piezo, radiation) ture or a combination of both with hexagonal or wurtzite
devices. Devices using nanoparticles offer an alternative phase dominating. Schroeder et al.32 have reviewed the
fabrication mode to lithography and also certain unique experimental measurements on high pressure induced
opportunities due to size quantization effect. However, this phase changes in CdS, CdSe, and CdSSe nanoparticles.
in turn demands that to exploit the properties of nanopar- Nanoparticles are either capped with or coupled to dif-
ticles, they should have as narrow a size distribution ferent wide band gap semiconductor nanocomposites. The
as possible (monodisperse) and should remain thermally role of interfacial charge transfer has been studied in
stable during any device operation without coagulation. such composite systems. The majority of the work has
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is developing nano fabrication facility to synthesize semiconductor-metal nanoparticles,
nanowires and composite materials for advanced technology applications. She has expertise
in the synthesis characterization and device fabrication of doped and undoped monodis-
persed quantum dots, for applications in electroluminescent devices. She has published over 20 technical articles in the
area of interest. She is a member of The Electrochemical Society and American Vacuum Society.
S. S. Hullavarad received Ph.D. for his work on High Energy Ion Induced Irradia-
tionbyEffects
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to: University established
Southern ionizing radiation thresh-
California
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on 95.148.164.127
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04 Aprby DLTS
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08:42:52
on Wideband Gap Semiconductor
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American Scientific and characterization for dopant activation in
SiC, passivation layer for SiC MOSFET and RF MEMS and NEMS devices at Uni-
versity of Maryland, (UMD) College Park, MD. At UMD he developed AlN based
composite structures for high frequency and Q resonators for Army Research Labo-
ratory, MD. He was involved in developing the oxide based Deep UV detectors for
space applications. At UMD he mentored students under Maryland Engineering Research
Internship Training (MERIT) program in collaboration with Federal Research Labora-
tories. He has authored over 40 technical articles and book chapter on the topics of
interest. He heads Microelectronics and Photonics Laboratory at Office of Electronic Miniaturization (OEM), University
of Alaska Fairbanks. His present research at OEM, focuses on developing the nanocomposites based thermal interface
materials for flip chip packaging platforms and nano interconnects. He is a member of American Physical Society,
Materials Research Society and American Vacuum Society.
Table I. Properties of cadmium sulphide. volume of literature. However, most of the directions of
Basic properties the research are covered.
Other names Greenockite, Cadmium(II) sulphide
Molecular formula CdS 2. QUANTUM CONFINEMENT IN
Color Yellow to orange SEMICONDUCTOR NANOPARTICLES
Appearance Crystalline solid
Group and type n-type semiconductor belonging to II–VI group In 1983, Brus44 45 studied the effect of size variation on
Density and phase 4.82 g/cm3 , solid. ionization potential and electron affinity of small inor-
Solubility in water Insoluble
ganic semiconductor crystallites. He proposed a theoret-
Melting point 1750 C at 100 bar
Boiling point 980 C sublimation. ical model based on effective masses of electrons and
Crystal structure Hexagonal and cubic structure with a large holes in bulk. Quantum confinement effects are observed
contribution from the hexagonal phase. in all materials as the particle size is reduced to nano-
Band gap Direct band gap 2.42 eV dimensions.
Mass of electron me 0.19
According to the Effective Mass Approximation theory,
Mass of hole mh 0.8
Bohr radius aB 2.06 nm the energy gap between valence band and conduction band
f Hsolid −144 kJ/mol is equal to the energy required to create a Wannier exciton
Ssolid 71 J/(K mol) (electron–hole pair) in direct band-gap materials. The Bohr
(Ref:http://en.wikipedia.org/wiki/Cadmium_sulfide#column-one,
radius of an exciton is given as
http://encyclopedia.thefreedictionary.com/cadmium + sulphide).
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2
1 1
aB = 2 +
e me m h
discussed investigations of the optical properties, structure
and morphology of polydispersed CdS. Materials like where, me and mh are electron and hole mass and
is the
33 34
Eu, Mn, etc. have been used to dope CdS nanopar- dielectric constant of the semiconductor. The Bohr radius
ticles in varying concentrations and have resulted in of an exciton in a particular material helps in estimat-
luminescence enhancement or quenching. CdS nanopar- ing the size dependent region for semiconductor nanopar-
ticles are also used as a catalyst for the photocatalytic ticles. If the dimension of nanocrystallites is comparable
decomposition of water. This will be discussed in detail
Delivered by Publishing Technology to: to the Bohr
University radius ofCalifornia
of Southern an exciton dimension, then they
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later. There have been attempts to form core–shell, cou- Fri, 04are
Aprdrastically
2014 influencing
08:42:52 the spatially localized excitation
Copyright: American Scientific Publishers
spectrum as illustrated by Brus. This is similar to energy
pled (Figs. 1 (Ref. [35]) and 2 (Ref. [36])), and doped
37
nanoparticles of CdS with other materials. A p–n diode, quantization for a Particle in a box which results in dis-
n-CdS/p-AgGaS2 was fabricated by decorating the surface crete excitation energy levels for the particle. According to
of AgGaS2 with nanoparticles of n-type CdS using the Brus, the size dependent energy gap (E ) for a nanoparticle
hydrothermal method. The nanoparticles tend to coagulate having a physical radius (R) is given as
upon annealing and form larger particles. The coagulation E = Eg + E (1)
of CdS nanoparticles and the effect of annealing upon the
structural phase transform phonon modes based on particle 2 2 1 1 18e2
E = + − + polarization term (2)
growth are discussed in details by Sivasubramanian et al.38 2R2 me mh
2 R
There have been review articles on II–VI semiconduc- Where, Eg is the bulk semiconductor band gap, E is the
tor nanoparticles, starting with Brus39 (1986), “Experiment size-induced shift in the energy of the lowest excited state
and theory of electronic wave function in semiconductor (the traditional conduction band), R is the particle radius,
clusters;” Henglein40 (1989) “Physicochemical properties and
is dielectric constant. The first term in Eq. (2) rep-
of extremely small colloid metal and semiconductor par- resents the particle-in-box localization energy. The polar-
ticles;” Wang and Herron41 (1991), “The material syn- ization term being very small does not affect the equation
thesis, quantum size effects and photophysical properties and can be neglected.
of nanometer-sized semiconductor clusters;” Schroeder42 The bulk semiconductor band gap widens as the size
(1996), “Spectroscopy of II–VI nanocrystals at high pres- of the particle decreases to the nanoregime. It is mea-
sure and high temperature” Trindade43 (2000), “The sured similar to the energy gap between the Highest Occu-
synthesis, properties and perspectives of nanocrystalline pied Molecular Orbital and Lowest Unoccupied Molecular
semiconductor.” A number of diverse techniques used to Orbital (HOMO-LUMO) in the case of molecules. The
synthesize bare as well as surface passivated (or some- dependence of the energy gap on the change in particle
times called “capped”) CdS nanostructures (and materials size has been verified for CdS nanoparticles along with
based on CdS nanostructures) are discussed in this paper. the size dependent behaviors46 of the energy gaps of ZnO,
A number of interesting applications of CdS nanotech- GaAs, and InSb as seen in Figure 3. Recently attempts
nology are also discussed. The review is not intended to have been made to modify the effective mass approxima-
include every publication in nano CdS because of the large tion theory.47
TiO
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Fig. 1. Thin films of TiO2 (core)/CdS (shell) nanorods. (a) and (b) SEMs of thin films of TiO2 nanorods without the attachment CdS nanoparticles.
(c) A schematic of how nanoparticles of CdS are attached to TiO2 nanorods. (d) and (e) SEMs of thin films of TiO2 nanorods with the attachment
CdS nanoparticles. (f) TEM of a single TiO2 (core)/CdS (shell) nanorod. Reprinted with permission from [35], H. Jia et al., Electrochem. Comm. 9,
354 (2007). © 2007, Elsevier.
A B C D E
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lyst. Cd-salt solution is added to the above mixture and
then S-salt solution is added very gradually to obtain CdS
nanoparticles. In some cases, the sol containing Cd-ions is
exposed to H2 S gas92 to form CdS nanoparticles. The onset
of nanoparticle formation becomes evident from the imme-
Fig. 5. Photoluminescence (PL) and the corresponding UV/Vis absorp- diate change of color of the solution to yellow. The entire
tion spectra of the as-prepared CdS nanocrystals having different sizes. solution is stirred continuously until a gel is formed. The
Reprinted with permission from [151], W. W. Yu and X. Peng, Angew. sol–gel process
Delivered
Chem. Int. Ed. 4, 2368 (2002). by Publishing
© 2002, WILEY-VCH Technology
Verlag GmbH. to: University of needs either
Southern a slow or supercritical con-
California
trolled drying
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form of alcogel,
Copyright: American Scientific Publishersxerogel or aerogels. For the synthesis
shown in Figures 6(a)67 and (b)68 . This microemulsion of CdS nanoparticles in monolithic form, the mixture is
technique69–76 has been applied to synthesize CdS nanopar- allowed to dry for about a month under ambient con-
ticles. An aqueous solution of CdCl2 · 5H2 O was added ditions. In one of our studies,93 this technique yielded
gradually in minute quantity to a solution of77 cyclohex- monoliths of white and yellow color, indicating the parti-
ane and surfactant (Tween-80, Peregals, C12E9 or Tri- cle size variation of CdS nanoparticles embedded in them.
ton X-100) and after that n-pentanol was added. This Figures 8–10 show the UV-absorption spectra and SEM
solution was mixed vigorously to form microemulsion. images of CdS nanoparticles embedded in SiO2 matrix.
Similarly, a microemulsion of Na2 S · 9H2 O was prepared CdS nanoparticles embedded in the fibrous network have
using the same surfactants. Then an equal volume of also been reported.94 Ptatscheck et al.95 have synthesized
two microemulsions with the same surfactant were mixed CdS nanoparticles in a silica matrix in the size range of
together followed by gentle shaking. The final solution was 0.4 to 1.6 nm using this method. CdS nanoparticles can
left for 12 hrs to allow formation of nanostructures of dif- be embedded into zirconia96 or titania97 matrices instead of
ferent morphologies. CdS nanostructures were harvested silica matrices using the sol–gel technique. Morita et al.98
by adding propanol to break up the micelles. Precipitates used a Zr-sol–gel matrix to prepare CdS nanoparticles
were washed repeatedly by centrifuging with propanol and doped with Mn2+ and Eu3+ . Silica-titania sol–gel compos-
ethanol to remove the excess surfactant. The final product ite matrices are also used for CdS nanoparticle synthesis.99
was light yellow in color, insoluble in water and ethanol The sol–gel method has many advantages including
and could be stored in ethanol. reproducible homogeneous CdS nanoparticle doped thin
Brien et al.78 79 studied monodispersed CdS nanopar- films,100 achievement of simple material modification by
ticles in two sizes (3.5 nm to 5.9 nm) that were pro- incorporating organic functional groups,101 102 and use of
duced using the miceller method. CdS-nanocomposites80–85 readily available processes to attain specific device struc-
either in the form of core–shell nanoparticles, or grown on ture with low cost materials and equipment.
top of latex spheres, may find application in bio fluores-
cence. CdS nanostructures are also embedded in polymer 3.4. Electrochemical Deposition Method
microfibers86 as seen in Figure 7, forming nanocomposite
fibers. A 1-dimensional inorganic coordination polymer Electrochemical deposition103 is widely used to form
template route was developed to synthesize metal sulfide thin films of metals,104 semiconductors,105 polymers,106
(a) (b)
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Fig. 6. (a) Oversimplified representation of organized structures formed from surfactants. Reprinted with permission from [67], J. H. Fendler, Chem.
Rev. 1907, 877 (1987). © 1987, American Chemical Society; (b) Schematic of CdS nanoparticles stabilized by polyacrylamide in the inner cavities
and on the outer surface of the ethylendiaminetetraacetate (EDTA) vesicle membrane. Reprinted with permission from [68], T. I. Igumenova and V. N.
Parmon, J. Photochem. Photobiol. A: Chem. 90, 159 (1995). © 1995, Elsevier.
polymer-semiconductor composites107 and insulators108 on aqueous solution and then were oxidized. Using these
conductive substrates. It is possible to grow quasi-one and modifications, it is possible to obtain high monodispersiv-
-two dimensional structures normal to the substrate sur- ity due to diffusion decoupling of Cd nanocrystals. The
face by confining electrodeposition to cells of appropriate oxidized Cd nanocrystals were later exposed to H2 S to
dimensions. Porous aluminum oxide templates formed by form passivated CdS nanoparticles.113 The exposure of
anodic etching work well as ordered templates to con- the solution during electrochemical deposition to light is
fine the growth of structures.109 CdS nanowire arrays, termed as photo-chemical electrodeposition and is used
1 m in length and 9 nm in diameter have been formed to deposit CdS films.114 Stickney and co-workers pro-
by electro chemical method from an electrolyte solu- posed electrochemical atomic layer epitaxy (ECALE) as a
tion consisting of Cd2+ and dimethyl sulfoxide.110 This low-cost procedure for producing structurally well-ordered
method has been adopted by Chen et al.111 to fabri- ultrathin layers of CdS and other compound semiconduc-
cate the photoelectrodes consisting of TiO2 nanotubes/CdS tors on polycrystalline as well as on single-crystal gold
nanoparticles core–shell structures (nanotubes core and electrodes. ECALE is an improvement on the conven-
CdS nanoparticles shells). Ensembles of 200,000–400,000 tional direct current electrochemical deposition technique.
sulfur capped, CdS nanoparticles have been synthesized The ECALE method is based on the alternate underpo-
by modified electrochemical method.112 In this method, tential deposition (the potential required to electrodeposit
the Cd nanocrystals were first electrodeposited from an an element on another element occurs before the required
Absorption (arb.units)
(b)
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Fig. 9. SEM of CdS nanoparticles embedded in SiO2 matrix. The inset
shows UV absorption spectra for six different samples. Combined 2
figures. Reprinted with permission from [93], N. V. Hullavarad and S. S.
Hullavarad, Photonics and Nanostructures—Fundamentals and Applica-
tions 5, 156 (2007). © 2007, Elsevier.
TEOS:Cd -1:1
0.5
3.5. Langmuir-Blodgett (LB) Method
Fig. 10. SEM of CdS nanoparticles embedded in SiO2 matrix. The inset shows UV absorption spectra for six different samples. Combined 2 figures.
Reprinted with permission from [93], N. V. Hullavarad and S. S. Hullavarad, Photonics and Nanostructures—Fundamentals and Applications 5, 156
(2007). © 2007, Elsevier.
form CdS nanoparticles in a wide range of diameters.119–127 with monolayers of Cd-arachidate using LB technique,
The process starts with the formation of an LB film of which when exposed to H2 S gas formed CdS nanopar-
a Cd containing organic liquid on the surface of water ticles attached to CNT surfaces. In this experiment, the
(Fig. 12). The film is then transferred to a substrate, expos- CdS nanoparticles self assembled on the surface of the
ing the film to H2 S to convert it to CdS nanoparticles. carbon nanotubes as seen in Figure 13. Zhang et al.,130
The thickness of the film on the substrate can be increased synthesized CdS nanoparticles on a DNA template as
by repeated application of the LB films resulting in CdS seen in Figure 14. In another work, multiple layers
nanoparticles that are a few nanometers in size or are large of CdS nanoparticles fabricated by using LB technique
enough to exhibit bulk material properties.128 were connected to an aromatic bifunctional molecule,
Valentini et al.129 synthesized CdS nanoparticles on 4-carboxythiophenol. However, the quality of LB films
the surface of carbon nanotubes using this technique, formed in this work deteriorated after seven monolayers.131
where carbon nanotubes were deposited on Si3 N/Si sub- CdS nanoparticles have been incorporated into conducting
strates by CVD method. The nanotubes were then coated and nonconducting polymers by depositing composite
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Fig. 11. SEM and HRTEM images of CdS particles deposited on the surface a typical multiwalled carbon nanotube (MWNT). Dark and light I–V
curves for CdS/MWNT: (a) under white light from halogen lamp (100 mW/cm2 ); the insert is an AFM image of a CdS/MWNT channel for device
and (b) under blue light from blue-LED, (470 nm, 1 mW/cm2 ). Reprinted with permission from [117], Y. Kang and D. Kim, Sens. Actuators A 125,
114 (2006). © 2006, Elsevier.
Fig. 12. A schematic diagram of stearic acid/eicosylamine alternate layer Langmuir-Blodgett (LB) films. Reprinted with permission from [122],
R. Capan et al., Thin Solid Films 515, 3956 (2007). © 2007, Elsevier.
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50 nm
Fig. 14. TEM image and electron diffraction pattern of the selected
region of CdS nanoparticles on oligomeric DNA (oligo[A]10 ) mono-
layer film at the surface pressure of 20 mNm−1 . Schematic diagram of
n-octadecylamine (ODA) and oligo[A]10 at the gas/liquid interface at dif-
Fig. 13. SEM image of CdS nanoparticles coated on carbon nanotube. ferent surface pressures and the corresponding top-view of the gas/liquid
Reprinted with permission from [129], L. Valentini et al., Chem. Phys. interface. Reprinted with permission from [130], X. Zhang et al., Mater.
Lett. 392, 214 (2004). © 2004, Elsevier. Chem. Phys. 77, 899 (2002). © 2002, Elsevier.
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device (Fig. 16) consisted of three inlets in the form of
a double T junction; one inlet for introducing silicone oil
that acts as the carrier fluid and the other two inlets for
dispensing nanoscale droplets of aqueous Cd and S salt
solutions. The design of the expansion chamber allowed
the droplets of Cd and S salt solutions that are dispersed
into the oil medium to experience a velocity gradient
andUniversity
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Southern micro- (or nano-) reactors.
California
IP: 95.148.164.127 On: Fri,Nanoparticles
04 Apr 2014were eventually formed in these merged
08:42:52
Copyright: American Scientific Publisherswhen the stream of the droplets tra-
droplets especially
versed through a long channel that involved several zigzag
turns. The size of the fused (Cd + S) droplets was as
large as 60 microns (the diameter of the channel) with
CdS concentration at 5 × 10−5 M. The technique involves
very clever use of microfluidics to produce very uniform
nanoparticles down to 4 nm size.
Water inlet 1
Pinch Exiting
junction junction
Oil inlet Outlet
stream
Wedge shaped
chamber
Water inlet 2
Fig. 15. TEM images of CdS nanowires (a) prepared in the absence of Fig. 16. Schematic diagram for the synthesis of CdS by micro-fluidic
Poly vinyl-alcohol PVA, (b) prepared at 140 C for 10 h, and (c) prepared method. Reprinted with permission from [148], L. H. Hung et al., The
at 140 C for 48 h. Reprinted with permission from [144], J. Yao et al., Royal Soc. Chem. Lab Chip 6, 174 (2006). © 2006, The Royal Society
Mat. Lett. 59, 3652 (2005). © 2005, Elsevier. of Chemistry.
HS− (from the solution) −→ S2− + H+ Hayes et al.162 obtained CdS colloids by irradiating solu-
ray irradiation tions containing cadmium ions and a thiol (3-mercapto-
propane-1, 2-diol, RSH) with -rays. CdS nanoparticles
Cd2+ + S2− → CdS with a mean size of 2.3 nm have been prepared by
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dots can be tuned from 3.32 to 4.26 eV by varying the
took place during ion implantation either at room or LN2
type and concentrations of stabilizer, pH value, and con-
temperature. Annealing the samples at higher tempera-
centration of sulfide source. The energy position is signif-
tures caused an increase in the average size of synthesized
icantly dependent on the interaction between the pH value
nanoparticles.
and the concentration of the stabilizer, and the effect of
Meldrum et al.173 have reviewed the use of ion irradi- high glutathione concentration is opposite at acidic and
ation to fabricate nanomaterials and their applications in alkaline conditions thus leading to energy gaps of 4.10 eV
devices. This technique produces a high density of nano- at pH = 6 and of 3.64 eV at pH = 10. Similar efforts are
crystal precipitates, offers flexibility
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made to synthesize CdS nanoparticles using various bio-
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183–188
logical molecules.
Copyright: American Scientific Publishers A comprehensive review on the
and has found applications in producing materials that application of CdS in view of biological synthesis and
exhibit third order nonlinear optical effects due to the pre- applications is reported elsewhere.189
cise transfer of energy localized on a nanoscale.
3.14. Direct Vapor Phase (DVP) Technique/VLS
3.12. Molecular Beam Epitaxy (MBE) Method (Vapor Liquid-Solid Process)/Catalytic
Growth Method
MBE174 175 is used for preparing nanostructure arrays hav-
ing specific sizes.176 An MBE growth chamber consists The Direct Vapor Phase technique has been explored to
of an extensive liquid N2 cryoshroud for efficiently freez- grow CdS nanostructures. DVP, also known as VLS pro-
ing out of high vapor pressure materials such as sul- cess or catalytic growth process, is a modification of the
fur. The growth of nanostructures using MBE is carried vapour transport and thermal evaporation method, in which
out using two separate standard low temperature effusion the precursor material is first heated and the vapors are
cells for cadmium and sulfur. The sulfur effusion cell is transported to the substrate location due to the gas pres-
heated independently in the range of (110–380 C) and is sure gradient, leading to the formation of nanowhiskers,
equipped with a post heating zone that is operated at about nanobelts, and nanowires. However, the concentration of
200 C. Ueta et al.177 demonstrated the selective growth of the precursors, amount of gas flow, and most importantly
pyramid shaped CdS quantum dots (nanoparticles grown the location of the substrate is chosen such that the final
on the substrates) on GaAs (001) substrates. The formation products are directly deposited onto substrates. The evap-
of small islands (typically 3–10 nm) during the growth of oration temperatures of DVP (∼600–800 C) are lower
quantum well structures makes it relevant for fabricating than those of thermal evaporation (1800–2000 C). This
room temperature opto-electronic devices.178 These small is an inexpensive technique and has the potential to grow
islands lead to the formation of quasi-zero dimensional materials on a large scale. Zhang et al.190 have grown CdS
states. The significant development in the MBE growth of nanowires with Sn particles attached at the end of each
quantum well structures of CdSe/ZnSe has been reported nanowire using this technique as seen in Figure 18. Sin-
where CdS is used as a source of Cd along with the substi- gle crystalline CdS nanobelts were also grown by physical
tution of sulfur by selenium that leads to the suppression evaporation.191 In a similar experiment, Dong et al.192 have
of Cd segregation.179 shown the formation of CdS nanobelts and nanowires on
(a)
(a)
(b)
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(b)
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Fig. 19. SEM images of CdS nanobelts (a) and CdS nanowires (b)
formed on tungsten substrates. Reprinted with permission from [192],
L. Dong et al., Chem. Phys. Lett. 376, 653 (2003). © 2003, Elsevier.
(c)
Fig. 18. (a) A SEM image of the as-synthesized products. (b) A typical
SEM image of the CdS hierarchical nanostructures. (c) A SEM image
of the CdS nanoneedle. It has a large head and another tip exhibits
sharp morphology. Reprinted with permission from [190], J. Zhang et al.,
J. Cryst. Growth 293, 236 (2006). © 2006, Elsevier.
in micrometer and 100–200 nm width, grown by decom- ITO PPV CdS Metal
position of CdS at 650 C in pure H2 as a carrier gas. The
self assembly nano-electrochemistry growth of dendrite- 4.6 eV
2.7 eV 3.8 eV
CdS assisted CdS/SiO2 nanowire arrays were formed upon Ag - 4.2 eV Ag 4.2 eV
thermal evaporation of CdS and CdO on Si substrates.197 2.4 eV
The evolution of CdS nanowires during the thermal evap- Al - 4.4 3.5 eV
Al 4.4 eV
oration of CdS has been investigated and detailed anal-
ITO
ysis made on the structural and morphological variation
PPV
under deposition conditions of 900 C, 250 Torr of Argon
at 80 sccm. It was shown that the CdS nanostructures Fig. 21. Proposed energy level diagram for the thin film diode structure
appeared as amorphous spherical particles, followed by consisting of ITO/PPV/nano-CdS/Ag structure. The smallest particle CdS
nucleation of nanorods from cusps on the particle surface diodes exhibited largest current density. Reprinted with permission from
and different growth modes at each heating interval.198 [212], N. V. Deshmukh, J. Elect. Mat. 36, 634 (2007). © 2007, Springer.
With this understanding of synthesis methods, various
applications of CdS nanoparticles and nanowires will be thin films and on-off ratio greater than seven orders of
discussed. magnitude. This approaches a theoretical limit which is
attributed to the low density of surface states. The CdS
nanoribbons in this work were fabricated by the vapor
4. APPLICATIONS OF CdS
transport method.209 Single electron transistors210 211 made
NANOSTRUCTURES
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out of CdS nanoparticles have also been studied.
CdS thin films are used to fabricate photocells which In a recently published paper,212 we have shown a
are sensitive to visible light and exhibit photoconductiv- method of synthesizing monodispersed CdS nanoparti-
ity ratios (resistance in dark/resistance in light) as high as cles and their effect on current density of heterojunctions
10,000 for visible light. They are often found on street formed between CdS and PPV. Figure 21 shows the energy
lights as automatic on/off switches and are also used in level diagram for the Metal/nano-CdS/PPV/ITO hetero-
cameras and light meters. They were once even used in junctions. The flow of the injected holes towards the neg-
heat-seeking missiles to sense targets.199 ative electrode is blocked by the CdS layer, and the PPV
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layer of Southern
blocks the California
electron flow to the positive electrode.
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The field across
Copyright: American Scientific Publishers the CdS layer is increased due to the
Emitting Diodes accumulation of positive charges at the PPV/CdS inter-
face. The energy level mismatch at the PPV/CdS inter-
P-N junction diodes are building blocks200–203 for many
face further localizes the electrons and holes near the
advanced semiconductor devices and are also very valu-
able as diagnostic tools for understanding semiconductor junction. This increases the probability of recombination
materials and devices. A large segment of CdS nanotech- of charge carriers near the PPV/CdS interface, and hence
nology literature addresses the fabrication, characteriza- the efficiency and lifetime of the device is enhanced. We
tion, and application of homo-junction or hetero-junction have also reported heterostructures formed between p-type
diodes using CdS nanoparticles and conducting polymers porous silicon substrates and n-type CdS nanoparticles.213
(p-type).204 205 CdS nanostructures are an excellent choice (Fig. 22). Very good forward current-densities can be
for integration of thin film transistors (TFT) (Weimer obtained from such a device due to the reduced defect
206
1962) since they closely resemble the single crystal thin densities observed in nanostructured based materials as
films and possess intrinsically low density of surface trap- opposed to thin films where the current density is governed
ping states. It is possible to manipulate the device struc- by grain boundaries.
ture and configuration (heterostructures) by dissolving the In another study, CdS nanoparticles were synthesized
nanostructures in solution to coat onto desired substrates. intercellularly by using S pombe to fabricate the diode.
Various substrates can be used regardless of lattice match- S pombe and CdS nanoparticle diodes exhibited a rapid
ing in the light emission applications of nanoparticles that rise in the forward current (about 75 mA at 10 V) whereas
clearly indicate the advantage of nanoparticles over epi- the reverse bias breakdown occurred at 15 V. Linear char-
taxially grown207 quantum dots. Nanoparticles have been acteristics were observed for the protein sample without
deposited on Si wafers in order to integrate Si based cadmium sulphide nanoparticles.214 In another study, bulk
light sources with electronics for easy control of display CdS and CuS nanoparticle heterostructures, CdS/CuS/CdS,
devices and optical interconnection.208 Such heterostruc- deposited using the Langmuir-Blodgett technique showed
tures formed by chemical methods are technologically and voltage–current characteristics that indicated tunneling
scientifically important because they have unique opto- through the resonant levels.215
electronic properties. In an interesting article, the CdS Layers of CdS nanoparticles have been used as
nano TFT’s were demonstrated with a carrier mobility of active emission layers in light-emitting diodes (LEDs)216
200–300 cm2 V−1 s−1 that is comparable to the bulk CdS (Fig. 23).217 The bandgap can be tuned by alloying CdS
Fig. 24. Schematic of LED array consisting of heterostructures between common p-Si and n-GaN, CdS and CdSe emitting in UV and visible
regions and the corresponding EL from the diode arrays. Reprinted with permission from [218], Y. Huang et al., (2005). © 2005, Wiley-VCH Verlag
REVIEW
GmbH & Co.
4.2. CdS Nanoparticles in Photovoltaic Devices improvement in the energy conversion efficiency of MEH-
PPV solar cell was observed from 0.0012% to about
CdS nanoparticles are widely used to enhance the 0.60% when combined with the vertically aligned CdS
performance of inorganic heterojunction photovoltaic nanorods.
devices.227–229 An electrical voltage builds up as radiation
is absorbed by these devices. Electrons and holes should 4.3. Hydrogen Production Using CdS Nanoparticles
travel without any radiative recombination
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by Publishing Technology to: University of Southern California
devices following different pathsIP: 95.148.164.127
towards On: Fri,Researchers
the respective 04 Apr 2014 have 08:42:52
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Copyright: American Scientific
cess to Publishers
obtain sustainable energy sources for hydrogen pro-
electrode. The role of CdS nanoparticles is to separate the
charge by providing electron pathways. As the polymer/ duction using sunlight. CdS nanoparticles are used for this
nanoparticle photovoltaic device is irradiated, the exciton purpose, because CdS shows light absorption in the visible
(electron–hole pair) gets dissociated, with the hole travel- region and has suitable conduction band potential to effec-
+ 237
ing through the polymer and the nanocrystals providing the tively reduce the H ion. Comparison of photo catalytic
path for the electrons. The quantum efficiency of highly activity in bulk CdS and CdS embedded systems reveal
concentrated and well connected polymer/nanoparticle that the CdS embedded systems show comparatively better
composite solar cells is below 100% as some electrons activity.
come to a dead-end in the network and are forced to jump
to the neighboring polymer and thus recombine, lowering 4.4. CdS Nanowires as Optical Wave-Guides
230
the quantum efficiency. Some reports have indicated the and Lasers
possibility of replacing the organic sensitizer dye in pho- There is an ever increasing quest in the field of communi-
tovoltaic cells (DSSE)231 232 by CdS nanoparticles. CdS cations and data transmission with emphasis on integrated
nanoparticles were hybridized with poly[2-methoxy-5-(2 0- optical circuits capable of performing sophisticated func-
ethylhexyloxy)-1,4-phenylenevinylene MEH-PPV to fabri- tions like all optical signal routing, active multiplexing and
cate photovoltaic devices.233 The RF sputtered CdS/CdTe demultiplexing.238 The emergence of semiconductor doped
heterojunction photodiodes with a leakage current of 10 nA waveguides lead to the all optical non-linear signal pro-
cm−2 at a reverse voltage of 20 V exhibiting a photorespon- cessing waveguides. Semiconducting nanowires function
sivity of 0.5 A cm−2 have been studied.234 235 as nanoscale wave propagation tracks in which the high
Similar to CdS nanoparticles, CdS nanorods have also contrast in the refractive index between the nanowire and
been used in solar cell applications.236 Cadmium sulfide the surroundings gives rise to a nanodiameter optical cav-
nanorods mixed with a conjugated polymer, MEH-PPV, ity. These submicron optical cavities function as waveg-
formed hybrid solar cells. These nanorods were grown uides in which the precise control of defects leads to the
by electrochemical deposition through a porous alumina bending and manipulation of light. The semiconducting
template giving rise to vertical nanorods on Ti substrates. waveguides are distinct from the conventional transparent
Reduction in photoluminescence signal from MEH-PPV waveguides due to the fact that the optical emission or
film was observed as a result of mixing, whereas, absorption occurs for modes of energies close to the band
gap energies. CdS nanowires with 80–200 nm diameters than 106 Ohm-cm for CdS and 109 for CdTe Ohm-cm
and wurtzite structures were used for fabricating lasers thin films were reported for X-ray imaging sensors.244
239
and also as optical waveguides. The advent of sophis- Electrohydrodynamic sprayed CdS and thermally evapo-
ticated semiconductor growth and processing techniques rated CdSe oxygen gas sensors have been studied using
paved the way for achieving the superior quality, epitax- X-ray Photoelectron Spectroscopy measurements in which
ial planar semiconductors that enabled the fabrication of the shift in binding energy was found to vary with the
integrated, electrically driven devices reproducibly. Duan chemical nature of oxygen radicals.245 A highly sensitive
240
et al. have observed that it is indeed possible to inte- gas sensor246 for detection and analytical identification of
grate the same quality device performance level using hazardous gases was reported by Miremadi et al.247 The
a controlled approach with a catalytic induced chem- sensors were fabricated by depositing partially crystalline
ical reaction. They have fabricated single crystal CdS powder from an aqueous suspension of CdS powder on
nanowires that function similar to the Fabry-Perot opti- an alumina substrate and the deposited layers were pro-
cal cavities with mode spacing inversely proportional to moted with catalysts from Pt-group metals. The sensors
the nanowire length. Nano LED based on the cross wire exhibited high sensitivity to different gas molecules upon
semiconductor approach has been discussed by Lieber modulation with light of certain frequency, depending on
and Wang in a topical review.241 The authors have pre- catalyst and impurity concentration. Dark resistance and
sented the nanoscale electronic injection lasers using photosensitivity of the sensors were studied against gas
n-CdS nanowires. Jerominek et al.242 demonstrated the concentration, sensor temperature, and frequency of the
CdS nanocrystallites of diameters close to 10 nm (the modulating light. Recently, a novel fiber optic surface plas-
REVIEW
authors termed it as microcrystalline) doped thin film mon resonance sensor with a metal-semiconductor core
waveguides by RF sputtering technique. The semiconduct- shell nanocomposite layers of CdS, PbS, ZnO, and CdSe
ing nanowire waveguides have been termed as active wave- has been reported and the sensors have been studied with
guides because they are operated near the band edge. respect to different metals. The sensor performance has
Barrelet et al.,243 have quantitatively studied the light prop- been evaluated for sensitivity and signal to noise ratio
agation in the CdS nanowire waveguides and observed and compared with Au-SiO2 surface plasmon resonance
the moderate optical losses (through sharp and even acute sensor.248 249 Highly resistive CdS and ZnSe layers grown
angle bends) by scanning optical
Delivered microscopy
by Publishing technique into: University
Technology on CdS surface have California
of Southern been used to fabricate UV sen-
which the CdS nanowire is excited by the laser light. These sors with
IP: 95.148.164.127 On: Fri, 04 Apr 2014 08:42:52 high quantum efficiency.250 The preparation of
measurements demonstrate that itCopyright:
is possible to inject,Scientific
American nano Publishers
and microcrystalline sensors using thin films of CdS
guide and manipulate light on a subwavelength scale using (30–200 nm) and CdSe (10–100 nm) by physical vapor
nanowire components that can be fabricated into integrated deposition is reported. The thin films were found to have
platforms thus paving the way for the integrated nanoscale crystallite sizes of 8 nm and the authors noted that the CdS
photonic systems. In this work, the authors have studied photoconducting devices were more sensitive to water,
the electro-optic modulation of the CdS waveguides (fabri- ethanol, ammonia, acetone, and iodine than CdSe photo-
cated by using a gold catalyst and single source precursor conducting sensors.251 In CdS/CdSe nanocrystals and core
of cadmium diethyldithiocarbamate or by laser ablation
of a polycrystalline CdS target) and compared the optical
loss to the Si and InGaAs waveguides. They have noted
the unoptimized CdS nano waveguides show better perfor-
mance of 1 dB/10 m as compared to 0.015 dB/10 m for
Si. Though all the optical non-linear photonic nanocrystals
have shown bright prospects for assembling more com-
plex structures in the future, the issue still remains about
the error free measurements of optical losses in nanowire
guides. This is due to ambiguity in the optical excitation
and the detection of the signal which diffuses through the
surface and the roughness of the sample that scatters the
light.
shells the application of cathodic potential leads to an very versatile pressure sensor in which the current at a
electron injection dramatically increasing the efficiency of fixed applied bias voltage can, for example, be used to
chemoluminescence (Fig. 25). This phenomenon is called monitor the pressure. CdS nanoparticles in this film exhibit
as electro induced chemoluminescence (ECL). The sen- electroluminescence that is a function of the current pass-
sitivity of this technique lies in effective electron trans- ing through the films (Fig. 26). Thus, the light emission
fer between nanocrystals and the chemical to be detected. from such a thin film at a constant bias voltage can also be
ECL has been observed in electrochemically reduced Si252 monitored to monitor the applied pressure. Sensors based
and CdSe253 nanocrystals when they interact with coreac- on this nanostructured film have been used to detect sur-
tant chemicals. ECL is highly sensitive, rapid, and con- face details at a pressure of approximately 10 kilopascals,
trollable and has been accepted for analytical applications distinguish features as small as 40 micrometers in width,
such as organic analysis and biosensors. Jie et al.254 have and resolve surface texture comparable to that of a human
reported the novel CdS ECL sensor for H2 O2 detection finger. The device is believed to have immense potential in
with a detection limit of 0.1 M. Zayats et al.255 have recording and recognizing fingerprints in the security and
studied the photo-electro-chemical processes in Au-CdS law enforcement industry.
nanoparticle arrays by surface plasmon resonance. The
sensors thus fabricated were used for detecting the acetyl- 4.6. CdS Nanoparticles in Biological Applications
chlorine esterene inhibitors.
Very novel pressure sensors have been fabricated by Bioentities such as antibodies, receptors, antigens and
embedding alternating layers of gold and CdS nanoparti- folded DNA exhibit nanodimensions and are comparable
REVIEW
cles in 2 to 3 nm thick polymer layers to the final thickness in size with nanowires, nanorods and nanoparticles. With
of about 100 nm.256 The electrical conductivity of this film the engineering of biomolecules with nanoscale materi-
depends on the pressure applied to the surface in the direc- als, it is possible to develop the hybrid materials that
tion perpendicular to the nanolayers. These films make a encompass the novel optimized recognition and reaction
Fig. 26. Pressure imaging device characteristics. (A) Schematic of the setup to take image texture of a metal coin (diameter ∼2 cm) and the pressure
images taken on CCD camera (device ∼2.5-cm square) at three different compressive stresses. The bias between the coin and the ITO electrode is fixed
at 18 V. (B) Comparison between optical microscope (inset) and pressure image of a TEM Cu grid. (C) The horizontal line in the pressure image is
the IEL scan. (D) Comparison between optical microscope and pressure image of the coin, showing the finer structure. The magnified image shows the
letters “RTY” of the word “LIBERTY” on the coin. (E) and (F) Comparison between the topographic and IEL scan across letter “Y” of “LIBERTY.”
The inset of (F) shows the local roughness of the coin. Reprinted with permission from [256], V. Maheshwari and R. F. Saraf, Science 312, 1501
(2006). © 2006, American Association for the Advancement of Science.
enhancing properties of biomaterials with the excep- to generate unique photoelectrochemical systems. Curri
tional opto-electronic and catalytic properties of nanoscale et al.262 reported the immobilization of nanocrystalline
materials. There has been good progress in the use of CdS by self-assembly onto a gold electrode in order to
CdS nanomaterials in biological applications. Microscopic prepare (in combination with formaldehyde dehydrogenase
sensor devices have been fabricated using fluorescent (FDH) enzyme) a biological-inorganic hybrid. The pre-
nanoparticles that can be attached to biological molecules. liminary results indicated that quantum-sized CdS layer
Nanoparticles of CdS and silicon dioxide coated with poly- on gold, in close contact with the enzyme, was an effec-
mer chains with biotin attached to the ends were reported tive photoactive material needed as a charge transfer
recently.257 molecule in the enzymatic reaction. A nanoparticle tagged
When a protein known as avidin that binds to biotin is oligonucleotide (ODN) probe sensor based on the physical
added to the solution, the larger aggregates of nanoparti- entrapment of a target oligonucleotide on electropolymer-
cles clusters were formed. It has been proposed that ized film with enhanced sensitivity due to the presence
these nanoparticles could be used to fluorescently label of CdS nanoparticles (enhanced amplification) has been
biological molecules and also as a means to transport reported by Travas-Sejdic et al.263 An increase in the
them in an electric field. Microscopic needles would be charge transfer resistance upon binding of complementary
used by these proposed devices. These needles would CdS–ODN nanoparticle probes is believed to be the main
be used to take up very small volumes of tissue fluid
through the skin and mix it with nanoparticles designed
to detect particular molecules and then transport them to
REVIEW
mechanism underlying the amplification. The constructed which the cadmium rich nanoparticles were found to form
sensor has shown good selectivity between exact matches a stable complex with DNA and the complexes exhibited
and mismatched sequences. The simple addition of DNA strong fluorescence.264 Nanowires, too, have applications
during the chemical synthesis of CdS nanoparticles in in detecting biological molecules.265
(a)
REVIEW
(b) Delivered by Publishing Technology to: University of Southern California
IP: 95.148.164.127 On: Fri, 04 Apr 2014 08:42:52
Copyright: American Scientific Publishers
(c)
Fig. 28. Directional electroswitchable photocurrents in the CdS-nanoparticles/DNA/intercalator system. Enhanced generation of anodic photocurrent
in the presence of the (a) doxorubicin intercalator (b) reduced methylene blue intercalator. (c) Oxidized methylene blue intercalator. Reprinted with
permission from [270], R. Gill et al., Angew. Chem. Int. Ed. 44, 4554 (2005). © 2005, Wiley-VCH Verlag GmbH & Co.
Fig. 29. Schematic of the analytical protocol of the multi-target electrical DNA detection protocol based on different nanoparticle tracers (CdS, ZnS
and PbS), modified with the corresponding probe P1 , P2 , and P3 . The detection is performed using square wave anodic stripping voltametry. Reprinted
REVIEW
with permission from [272], A. Merkoci et al., Revista Mexicana De F’Isica S 52, 1 (2006). © 2006, Sociedad Mexicana de Física, A.C.
4.7. CdS Nanoparticle Caps for Drug Delivery System nanoparticles functionalized with the dithiol-tethered com-
plementary nucleic acid (ca. 3 nucleic acid residues
How CdS nanoparticles act as caps, for covering the two per nanoparticle) were hybridized with the nucleic acid
ends of a tube holding drugs is explained here. Con- associated with the gold electrode that was pretreated
trolled drug-release delivery266 systems based on meso- with dithiol-tethered single-stranded (ss)-DNA as seen in
porous silica are chemically inert to the matrix–entrapped Figure 28.of An anodic California
photocurrent was observed when
compounds.267 The Delivered by Publishing
system consists Technology
of mesoporous silicato: University Southern
DNA/CdS–nanoparticle-modified
IP: 95.148.164.127 On: Fri, 04 Apr 2014 08:42:52 electrode was photo-
nanospheres functionalized with 2-(propyldisulfonyl) ethy-Scientific
Copyright: American irradiated in the presence of triethanolamine (TEOA). The
Publishers
lamine. The average particle size of mesoporous silica imperfect structure of the CdS–nanoparticles/DNA duplex
nanospheres is 200 nm with an average pore diameter of gives rise to the photocurrent. Nondensely packed inter-
2.3 nm. The silica mesopores are used as reservoirs to faces formed by CdS–nanoparticles/DNA duplexes enable
soak up aqueous solutions of various pharmaceutical drug
the tilting of the monolayer components with respect to the
molecules and neurotransmitters. The neurotransmitters
electrode surface. Due to this, intimate contact between the
such as vancomyin and adenosine triphosphate—ATP are
CdS–nanoparticles and the electrode is formed, that may
used. Mercaptoethanol capped CdS nanoparticles are used
then lead to the photocurrent. Whether DNA shows con-
as in-situ caps for the opening of the drug/neurotransmitter
ductivity is a subject of substantial controversy.271 Merkoci
loaded mesoporous silica as seen in Figure 27. Disulphide
et al.272 have studied DNA detection using CdS nanopar-
linkage arises between the CdS nanoparticles and meso-
ticles (Fig. 29). Similarly, CdS nanoparticles are also used
porous silica that can be cleaved with various disulphide
to enhance the sensitivity of DNA sensors by incorporating
reducing agents like mercaptoethanol. So, the release of
CdS nanoparticles with the probe.273
the CdS nanoparticle caps from the drug/neurotransmitter
loaded mesoporous silica can be achieved by introduction
of variable amounts of release triggers.268 5. SUMMARY
According to a recent article in Nature, the chaper-
onin proteins GroEL (from Escherichia coli) and T.th CdS has been a very useful II–VI semiconductor for
(‘T.th cpn,’ from Thermusthermophilus HB8) can also decades and has now become a potential material for
enfold CdS semiconductor nanoparticles, giving them high research, development, and demonstration of innovative
thermal and chemical stability in aqueous media. These practical applications in the field of nanotechnology. Nano-
nanoparticles can be readily released from the protein structures of CdS exhibit many unique properties and they
cavities. Integration of such biological mechanisms and can be combined with various inorganic, organic, biolog-
materials science will open the door to conceptually new ical materials to provide materials and devices that have
bioresponsive devices.269 extraordinary practical applications.274 Nanoscale struc-
Layers of CdS nanoparticles that are attached to DNA tures, devices, and systems based on CdS have widely
molecules forming a photo-electrochemical system are dis- been used to demonstrate the potential of nanotechnol-
persed on a gold substrate.270 Another report on CdS ogy in providing breakthrough solutions in every area
of technology as well as day-to-day life. Efforts in fab- 20. U. Venkateswaran, M. Chandrasekhar, and H. R. Chandrasekhar,
rication of CdS nanostructures and nanodevices have Phys. Rev. B 30, 3316 (1984).
demonstrated the state-of-the-art performance levels in 21. W. D. Lawson, F. A. Smith, and A. S. Young, J. Electrochem. Soc.
107, 206 (1960).
electronics, optoelectronics, photovoltaics, sensors, secu- 22. F. A. Kroger, G. Diemer, and H. A. Klasens, Phys. Rev. 103, 279
rity, etc. Nanostructures formed by combining CdS with (1956).
organic, pharmaceutical, and biological materials have 23. I. Giaever, Phys. Rev. Lett. 20, 1286 (1968).
clearly established the revolutionary concepts in areas such 24. I. Giaever and H. R. Zeller, Phys. Rev. Lett. 21, 1385 (1968).
as targeted drug delivery. In this review of nanotechnol- 25. M. Cardona and R. Haensel, Phys. Rev. B 1, 2605 (1970).
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ogy of CdS we included a synopsis of the historical sketch 2766 (1978).
that lead to the state-of-the-art R&D work, a brief sum- 27. D. Richards, A. M. El-Korashy, R. J. Stirn, and P. C. Karulkar,
mary of over a dozen methods of producing CdS nano- J. Vac. Sci. Technol. A 2, 2 (1984).
structures, and a comprehensive discussion of how many 28. R. B. Stephens, Phys. Rev. B 29, 3283 (1984).
forms of CdS nanostructures have been used and adapted 29. D.-S. Chuu and C.-M. Dai, Phys. Rev. B 45, 11805 (1992).
30. M. D. Sciacca, A. J. Mayur, E. Oh, A. K. Ramdas, S. Rodriguez,
to develop a large number of innovative practical appli- J. K. Furdyna, M. R. Melloch, C. P. Beetz, and W. S. Yoo, Phys.
cations. Although we have provided an overview of the Rev. B 51, 7744 (1995).
breadth and depth of synthesis and applications, many 31. M. P. Pileni, I. Lisiecki, L. Motte, and C. Petit, Res. Chem.
nanotechnology challenges could not be addressed ade- Intermed. 17, 101 (1992).
quately because of the fast developing nature of these 32. J. Schroeder and P. D. Persanas, J. Lumin. 70, 69 (1996).
33. S. Sadhu, P. S. Choudhary, and A. Patra, J. Lumin. 126, 387
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REVIEW
(2007).
ing and preserving, (2) characterization and metrology, 34. V. C. Costa, Y. Shen, and K. L. Bray, J. Non-Cryst. Solids 304, 217
(3) manufacturability (process control, shelf life, and reli- (2002).
ability), and (4) environmental and safety need to be 35. H. Jia, H. Xu, Y. Hu, Y. Tang, and L. Zhang, Electrochem. Comm.
addressed separately. 9, 354 (2007).
36. J. S. Jang, D. W. Hwang, and J. S. Lee, Catal. Today 120, 174
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Acknowledgments: The work at UAF was sponsored 37. S. K. Kulkarni, U. Winkler, N. Deshmukh, P. H. Borse, R. Finkb,
by the SPAWAR System Center San Diego Grant, num- and E. Umbach, Appl. Surf. Sci. 169/170, 438 (2001).
ber N66001-07-1-2011, with thebysupport
Delivered Defense to:38.University
of theTechnology
Publishing V. Sivasubramanian, A. K.California
of Southern Arora, M. Premila, C. S. Sundar,
Advanced Research Projects Agency IP: (DARPA)
95.148.164.127 On: Fri, 04 and
and by the AprV.2014
S. Sastry, Physica E-Low-Dimensional Systems & Nano-
08:42:52
Copyright: American Scientific structures 31, 93 (2006).
Publishers
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acknowledge the help from Ms. C. Corwin and Ms. A. 40. A. Henglein, Chem. Rev. 89, 1861 (1989).
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