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Experiment: 1: Vgec Chandkheda Basic Electronics (3110016)

The document describes Experiment 1 which aims to obtain the V-I characteristic of a p-n junction diode. The apparatus includes a p-n junction diode, digital multi-meter, LED, variable resistance and power supply. The theory section explains that a p-n junction forms when p-type and n-type semiconductor pieces are placed together. It also describes forward and reverse biasing. The procedure tests the diode under forward and reverse bias, noting voltage and current readings. It also tests an LED under forward bias. Questions at the end ask about diode ratings, forward dynamic resistance, determining polarity using a multi-meter, and differentiating avalanche and zener breakdown.

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Ridham Patel
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238 views6 pages

Experiment: 1: Vgec Chandkheda Basic Electronics (3110016)

The document describes Experiment 1 which aims to obtain the V-I characteristic of a p-n junction diode. The apparatus includes a p-n junction diode, digital multi-meter, LED, variable resistance and power supply. The theory section explains that a p-n junction forms when p-type and n-type semiconductor pieces are placed together. It also describes forward and reverse biasing. The procedure tests the diode under forward and reverse bias, noting voltage and current readings. It also tests an LED under forward bias. Questions at the end ask about diode ratings, forward dynamic resistance, determining polarity using a multi-meter, and differentiating avalanche and zener breakdown.

Uploaded by

Ridham Patel
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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VGEC CHANDKHEDA

BASIC ELECTRONICS (3110016)

EXPERIMENT: 1
Aim : To Obtain V-l characteristicsof p-n junction diode.

Apparatus: p-n junction diode. Digital Multi-meter,LED, variable resistance. power supply.
bread board. connectine wires. etc.
Fioure:
P-N junction diode in F-B

P-N junction diode in R.B

Theorv:
P-n junction diode

The contact surface betxseen the layers of p-t}pe and n-t_xpesemiconductor pieces placed
t02ether so as to from a p-n junction is called the P-N Junction.
When an external field with p-region • 'Connected to the +ve terminal : & n-region
connected to the -ve terminal of the battery is applied across the junction , the
junction is said to be fonsard biased.
When an external bias voltage is applied positive terminal to n-side and the
negative terminal to the p-side of a p-n-junction , the junction is said to be
reverse biased.
V-I Characteristics of p-n iunction diode:-
VGEC CHANDKHEDA
BASIC ELECTRONICS (3110016)

Proced u rc:-
P-N junction diode (Forward bias);
lake a p-n junction diode and connect the positive tcrjjjinal of' p-n ,junction diode with thc
positise terminal of the battery ( 12V) vice versa.
Connect a soltmeter in parallel with the p-n junction diode and an ammeter in scrics with
the sarne. also resistance in series.
Increase slowly and steadily a voltage of a source and notc down tliC voltmctcr and
ammeterreadings.
P-N junction diode (Rcverse bias):

Connect the positive terminalof a battery with thc n-part of semiconductorand vicc
versa.
Steps 2 and 3 as above.
Light Emitting Diode (Forward bias)
Similar to p-n junction diode, connectpositive terminal of battery to thc positivc parl of
LED and vice versa.
Connect a 100 ohm resistance in series with the LED and kccp the source of voltagc 0-5

itch on the supply and increasethe source voltage steadily and notc volt meter and
arnmctcr readings.

Conclusion:
CD Op51%3 bios ,
2hT_ygaLR
C)ufibg Rc»vvec h; al, clou cgxd-ur_fræ

Ouestions:
J) state important ratingsof Diode.
2) Define Forward dynamic resistance of J)iode.
3) Explain how to determine polarity of diode using multimcter.
4) J)ifferenitate betweenavalanche breakdown and zener breakdown or Diode.
をト4れ乙・ク
乙V, C

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