(ELECS2) Exp2 - Compound Configurations
(ELECS2) Exp2 - Compound Configurations
EQUIPMENT REQUIRED
RESUME OF THEORY
The DC bias of JFET is determined by the device transfer characteristic (Vp and IDSS) and
the external circuit connected to it. The AC voltage gain at this DC bias point is then
dependent on the device parameters (gm or gfs) and circuit drain resistance. AC Voltage
Gain: The voltage gain of an amplifier stage can be calculated from
Where: gm = gmo ( 1- Vgs/ Vp) with gmo = 2 IDSS / |Vp|
Zi= RG
AC Output Impedance : The AC output impedance is
Zo= RD
PROCEDURE
It is necessary to obtain values of IDSS and Vp for both Q1 and Q2. Use a characteristic
curve tracer, if available, to determine the values of I DSS and Vp . Obtain readings at VDS =
10 V.
Go on to part 2.
Otherwise , use the following steps to obtain these values.
Construct the circuit with RD= 510 (but with Rs= 0). Measure and record.
Q1 – 2N4222
Q2 – 2N4223
b. Connect input of Vsig = 10mV, rms at = 1KHz. Use the oscilloscope to obtain an
undistorted output voltage, adjusting V sig if necessary. Measure and record.
(measured) Vsig = 10mV
(measured) VL= -1.084 uV
Activity Report
Section: TT066
Date Performed: 05/20/2021
Course Code: ELECS2L
Date Submitted: 05/31/2021
Course Title: ELECTRONIC CIRCUIT ANALYSIS AND DESIGN (LAB)
Instructor: Engr. Carlo Romero
Group No.: The Gwapings
Activity No.: 2
Group Members:
Signature:
1.Aguila, Karl
2.Arevalo, Lennard
3.Escandor, Jayrald
4.Lazo, Frodolfre Reginald
Compare the input impedance calculated in step a with that determined from
measurements in step c.
they are different in value because the first step was the value of the resistor given on the circuit and the
second step was the measured values
Compare the output impedance calculated in step b with that determined from
measurements in step d.
the output impedance is smaller than the input and they are different because the first step was the value of
the resistor given on the circuit and the second step was the measured values
Calculations
2.8.3 Observations (if applicable)
Calculations were provided below..
2.8.4 Conclusion/s
Measured
IDSS=7.55 mA
Calculated
(𝑽𝑫𝑫 − 𝑽𝑫 ) (𝟏𝟎 − 𝟔. 𝟏𝟓)
𝑰𝑫𝑺𝑺 = = = 𝟕. 𝟓𝟒𝟗𝟎 𝒎𝑨
𝑹𝑫 𝟓𝟏𝟎
Measured
ID= 2 mA
Calculated
(𝑽𝑫𝑫 − 𝑽𝑫 ) (𝟏𝟎 − 𝟖. 𝟗𝟖)
𝑰𝑫 = = = 𝟐 𝒎𝑨
𝑹𝑫 𝟓𝟏𝟎
𝑽𝑮𝑺 −𝟐
𝑽𝒑 = 𝑽𝑮𝑺𝒐𝒇𝒇 = = = −𝟒. 𝟏𝟐𝟏𝟎 𝑽
𝑰 𝟐
𝟏−√ 𝑫 𝟏−√
𝑰𝑫𝑺𝑺 𝟕. 𝟓𝟓
VGS = 0
Measured
IDSS=9.87 mA
Calculated
(𝑽𝑫𝑫 − 𝑽𝑫 ) (𝟏𝟎 − 𝟒. 𝟗𝟔)
𝑰𝑫𝑺𝑺 = = = 𝟗. 𝟖𝟖𝟐𝟑 𝒎𝑨
𝑹𝑫 𝟓𝟏𝟎
Measured
ID= 1.77 mA
Calculated
(𝑽𝑫𝑫 − 𝑽𝑫 ) (𝟏𝟎 − 𝟗. 𝟏𝟎)
𝑰𝑫 = = = 𝟏. 𝟕𝟔𝟒𝟕 𝒎𝑨
𝑹𝑫 𝟓𝟏𝟎
𝑽𝑮𝑺 −𝟏. 𝟕𝟕
𝑽𝒑 = 𝑽𝑮𝑺𝒐𝒇𝒇 = = = −𝟑. 𝟎𝟕 𝑽
𝑰 𝟏. 𝟕𝟕
𝟏−√ 𝑫 𝟏−√
𝑰𝑫𝑺𝑺 𝟗. 𝟖𝟕
Part 2
CALCULATED stage1
VG =0
VS= 2.10 V
VGS = (VG – VS) = (0V – 2.10V) = -2.10 V
(𝑽𝑺 ) 𝟐. 𝟏𝟎
𝑰𝑫 = = = 𝟐. 𝟏 𝒎𝑨
𝑹𝑺 𝟏𝟎𝟎𝟎
(𝑽𝑺 ) 𝟐. 𝟎𝟗
𝑰𝑫 = = = 𝟐. 𝟎𝟗 𝒎𝑨
𝑹𝑺 𝟏𝟎𝟎𝟎
𝑽𝑮𝑺 −𝟐. 𝟎𝟗
𝑽𝒑 = 𝑽𝑮𝑺𝒐𝒇𝒇 = = = −𝟒. 𝟑𝟕𝟖𝟕 𝑽
𝑰 𝟐. 𝟎𝟗
𝟏−√ 𝑫 𝟏−√
𝑰𝑫𝑺𝑺 𝟕. 𝟔𝟓
𝟐𝑰𝑫𝑺𝑺 𝟐 × 𝟕. 𝟔𝟓
𝒈𝒎𝒐 = = = 𝟑. 𝟒𝟗𝟒
|𝑽𝑷 | | − 𝟒. 𝟑𝟕𝟖𝟕|
CALCULATED stage1
VG =0
VS= 2.10 V
VGS = (VG – VS) = (0V – 2.03V) = -2.03 V
(𝑽𝑺 ) 𝟐. 𝟎𝟑
𝑰𝑫 = = = 𝟐. 𝟎𝟑 𝒎𝑨
𝑹𝑺 𝟏𝟎𝟎𝟎
𝟐𝑰𝑫𝑺𝑺 𝟐 × 𝟕. 𝟔𝟓
𝒈𝒎𝒐 = = = 𝟑. 𝟔𝟓𝟒
|𝑽𝑷 | | − 𝟒. 𝟏𝟖𝟔𝟔|
VG =0
VS= 2.09 V
VGS = (VG – VS) = (0V – 2.03V) = -2.03 V
(𝑽𝑺 ) 𝟐. 𝟎𝟑
𝑰𝑫 = = = 𝟐. 𝟎𝟑 𝒎𝑨
𝑹𝑺 𝟏𝟎𝟎𝟎
𝑽𝑮𝑺 −𝟐. 𝟎𝟑
𝑽𝒑 = 𝑽𝑮𝑺𝒐𝒇𝒇 = = = −𝟒. 𝟏𝟖𝟔𝟔 𝑽
𝑰 𝟐. 𝟎𝟑
𝟏−√ 𝑫 𝟏−√
𝑰𝑫𝑺𝑺 𝟕. 𝟔𝟓
𝟐𝑰𝑫𝑺𝑺 𝟐 × 𝟕. 𝟔𝟓
𝒈𝒎𝒐 = = = 𝟑. 𝟔𝟓𝟒
|𝑽𝑷 | | − 𝟒. 𝟏𝟖𝟔𝟔|
𝟏 𝟏
𝒁𝒊 = 𝑹𝑺 || = 𝟏𝒌|| = 𝟎. 𝟑𝟕𝟕𝟗
𝒈𝒎 𝟐. 𝟔𝟒𝟒𝟗
Part 4 - Connect input of Vsig= 10mV, rms at = 100KHz.
CALCULATED stage1
VG =0
VS= 2.03 V
VGS = (VG – VS) = (0V – 2.03V) = -2.03 V
(𝑽𝑺 ) 𝟐. 𝟎𝟑
𝑰𝑫 = = = 𝟐. 𝟎𝟑 𝒎𝑨
𝑹𝑺 𝟏𝟎𝟎𝟎
𝑽𝑮𝑺 −𝟐. 𝟎𝟑
𝑽𝒑 = 𝑽𝑮𝑺𝒐𝒇𝒇 = = = −𝟒. 𝟏𝟖𝟔𝟔 𝑽
𝑰 𝟐. 𝟎𝟑
𝟏−√ 𝑫 𝟏−√
𝑰𝑫𝑺𝑺 𝟕. 𝟔𝟓
𝟐𝑰𝑫𝑺𝑺 𝟐 × 𝟕. 𝟔𝟓
𝒈𝒎𝒐 = = = 𝟑. 𝟔𝟓𝟒
|𝑽𝑷 | | − 𝟒. 𝟏𝟖𝟔𝟔|
VG =0
VS= 2.09 V
VGS = (VG – VS) = (0V – 2.03V) = -2.03 V
(𝑽𝑺 ) 𝟐. 𝟎𝟑
𝑰𝑫 = = = 𝟐. 𝟎𝟑 𝒎𝑨
𝑹𝑺 𝟏𝟎𝟎𝟎
𝟐𝑰𝑫𝑺𝑺 𝟐 × 𝟕. 𝟔𝟓
𝒈𝒎𝒐 = = = 𝟑. 𝟔𝟓𝟒
|𝑽𝑷 | | − 𝟒. 𝟏𝟖𝟔𝟔|
𝑽𝒊𝟏 𝟐𝟎 𝒎𝑽
𝒁𝒊 = ( ) (𝑹𝑺 ) = ( ) (𝟏𝒌) = −𝟐𝟎𝟎𝟎
𝑽𝑺𝑰𝑮 − 𝑽𝒊𝟏 𝟏𝟎𝒎𝑽 − 𝟐𝟎𝒎𝑽