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Question Bank (EJ/IE/IS3G) EDC (17319)

This document contains two chapters from an electronics question bank: 1) Chapter 1 contains questions on transistors including their types, configurations, biasing, and thermal runaway. 2) Chapter 2 focuses on JFETs and includes questions about amplification factor, transconductance, drain characteristics, self-biasing, and comparisons between BJTs and FETs. The second document provides a unit test on amplifiers, feedback amplifiers, oscillators, time base generators, and voltage regulators. It includes circuit diagrams and calculations.

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77 views4 pages

Question Bank (EJ/IE/IS3G) EDC (17319)

This document contains two chapters from an electronics question bank: 1) Chapter 1 contains questions on transistors including their types, configurations, biasing, and thermal runaway. 2) Chapter 2 focuses on JFETs and includes questions about amplification factor, transconductance, drain characteristics, self-biasing, and comparisons between BJTs and FETs. The second document provides a unit test on amplifiers, feedback amplifiers, oscillators, time base generators, and voltage regulators. It includes circuit diagrams and calculations.

Uploaded by

kada
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Question bank (EJ/IE/IS3G)

EDC (17319)
Chap 1
3 marks question
1) List types of transistors and draw their symbols .Why ordinary junction transistor is called a
bipolar transistor.
2) In CE configuration if β=150 , leakage current ICEO =100 µA. If base current is 0.2mA,
determine IC and IE.
3) State different configurations of BJT. Define α and β of a transistor.
4) Define biasing and state the need of biasing.
5) Explain thermal runaway. How it can be avoided.

4 mark question
1) Compare CB, CC and CE configurations.
2) Draw and explain output characteristics of CE configuration.
3) Derive the relation between α and β with respect to BJT.
4) Explain the operation of NPN transistor.
5) Draw the circuit diagram of CB configuration. Draw input and output characteristics with
different regions.
6) Draw and explain voltage divider bias method .
7) Study the following fixed bias circuit.

Also draw the DC load line and determine the operating point.
8) Explain transistor as a switch.
9) Define delay time ,rise time, fall time, TON and TOFF time.

Chap 2
3 marks question
1) Define amplification factor , transconductance and drain resistance with respect to JFET.
2) Give the interrelationship between µ , gm and rd.
3) Draw drain and transfer characteristics of n-channel JFET.
4 mark question
1) Explain self bias method for FET with circuit diagram.
2) Compare BJT and FET.
3) Draw and explain N-channel D – MOSFET.
4) Draw and explain P-channel JFET.
5) Explain the working of N-channel E-MOSFET.

Chap 3
3 marks question
1) Define voltage gain , bandwidth and power gain.
4 mark question
1) Draw and Explain single stage CE amplifier.
2) An amplifier has a signal input voltage of 0.25V and draws 1mA from the source. The amplifier
delivers 8V to load at 10mA.Determine
1) Current gain, 2) voltage gain , 3) power gain, 4) i/p resistance

Question Bank (2013-2014)


Name of subject: EDC Unit Test :II
Subject code: 17319 Course : IE/IS/EJ
Semester: III

Chapter 3
Amplifiers
1. With the help of neat circuit diagram explain the operation of common
source amplifier. (4m)
2. Compare Class A, Class B, Class C, Class AB (3m)
3. Draw & explain Class B push pull Amplifier (4m)
4. Draw & explain double tuned amplifier with its frequency response(4m)
5. Explain the concept of crossover distortion with suitable waveform (3m)
6. Define 1. Resonance frequency 2. Efficiency 3. Power Amplifier (3m)
Chapter.4
Feedback Amplifiers & Oscillators
7. Draw the block diagram and circuit diagram for current series feedback
amplifier. (4m)
8. Explain the effect of negative feedback on voltage gain, input & output
resistances, distortion, bandwidth and noise. (4m)
9. Explain the advantages and disadvantages of negative feedback. (3m)
10.Draw the ckt. Diagram of crystal oscillator . Give the basic principle (3m)
of piezoelectric crystal and also give the equivalent ckt. diagram.
11.Draw & explain RC phase shift oscillator. (4m)
12.A phase shift oscillator has R=220Kohms, C=500pF. Calculate the (3m)
frequency of oscillation.
Chapter.5
Time Base Generators
13.Explain operation of UJT with neat diagram. (4m)
14.Draw & explain UJT relaxation oscillator. Draw the waveforms & write the
formula of frequency. (4m)
15.Draw and explain the operation of Bootstrap sweep circuit. (4m)
16.Draw and explain the operation of Miller sweep circuit. (4m)
17.Draw and explain the operation of current time base generator. (4m)
18.Give application of sweep generators in TV and CRO. (3m)
19.Give applications of UJT . (3m)
20. A UJT with ή=0.62 is used in a relaxation oscillator circuit with (4m)
R=5kΩ and C-0.05µF. Determine the period and frequency of oscillation.
Define intrinsic standoff ratio.
Chapter.6
Voltage Regulators
21.Draw & explain zener diode as a voltage regulator. (3m)
22.Draw & explain transistorized shunt regulator . (4m)
23.Draw & explain transistorized series regulator . (4m)
24. Construct a dual power supply capable of giving ±12V using 78XX (4m)
and79XX IC’s.
25.Draw the pin diagram of 1. IC78XX 2. IC 79XX 3. IC LM723 (3m)
26. State important features of IC 723. What is the use of CL and CS (4m)
terminals.
27.For a zener diode voltage regulator , if Vin = 20V , Vz= 10V, (4m)
Rs=500Ω, RL = 1KΩ, find a. Load voltage, b.voltage drop across series
resistor Rs and c. current through zener diode.

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