This document contains 5 questions regarding power electronics concepts like composite switches, MOSFET switching characteristics, power losses during switching, thermal resistances of power diodes, and conduction losses in MOSFETs. The questions provide circuit diagrams and specifications to calculate average and RMS currents, power losses, switching times, thermal properties, and more. Formulas and datasheet parameters are given to evaluate the key performance aspects involved.
This document contains 5 questions regarding power electronics concepts like composite switches, MOSFET switching characteristics, power losses during switching, thermal resistances of power diodes, and conduction losses in MOSFETs. The questions provide circuit diagrams and specifications to calculate average and RMS currents, power losses, switching times, thermal properties, and more. Formulas and datasheet parameters are given to evaluate the key performance aspects involved.
This document contains 5 questions regarding power electronics concepts like composite switches, MOSFET switching characteristics, power losses during switching, thermal resistances of power diodes, and conduction losses in MOSFETs. The questions provide circuit diagrams and specifications to calculate average and RMS currents, power losses, switching times, thermal properties, and more. Formulas and datasheet parameters are given to evaluate the key performance aspects involved.
This document contains 5 questions regarding power electronics concepts like composite switches, MOSFET switching characteristics, power losses during switching, thermal resistances of power diodes, and conduction losses in MOSFETs. The questions provide circuit diagrams and specifications to calculate average and RMS currents, power losses, switching times, thermal properties, and more. Formulas and datasheet parameters are given to evaluate the key performance aspects involved.
NATIONAL INSTITUTE OF TECHNOLOGY, TIRUCHIRAPPALLI,
TAMIL NADU – 620 015.
B. Tech III YEAR, VI SEMESTER, BRANCH: ELECTRICAL AND ELECTRONICS ENGINEERING SUB. CODE and TITLE: EEPC21: POWER ELECTRONICS
Answer ALL questions. Roll No.
1. A composite switch used in a power converter is shown in Fig. 1 (a). The periodic current through the switch is also shown in Fig.1 (b). Evaluate, (A) The average current and RMS current through the composite switch. (B) The power loss in the MOSFET and the diode of the composite switch. (2M)
I RDS=0.1Ω 12
VON=0.8V
Fig. 1 (a) 0 5 10 20 25 t in μsec Fig.1 (b) 2. The datasheet of a MOSFET specify the following switching times corresponding to the characteristics shown in Fig.2: tr =159ns; tf =35ns. (a) Calculate the average power dissipation in the switch for a duty cycle of 70%. (b) Find out the minimum temperature that can be possible to maintain at the junction without heat sink. Take Switching frequency fs = 20kHz, Ɵ = 35oC, RDS (on) =6.1mΩ, Leakage current as 1μA. (Assume Vd =50V, and Io= 15A). Thermal characteristics is also given below. (4M)
Control signal
0 TS t ton =0.7TS toff
Vd =50V Io = 15A
tr t tf
Fig.2 3. During turn-on and turn-off of a power transistor the current-voltage relationships are as shown in Fig.3. Calculate the energy loss during both turn-on and turn-off periods and the mean power loss if the transistor is being switched at a frequency of 10 kHz. What is the maximum instantaneous power dissipated? IC (3M) 100A 5μs (Turn-off) 50A 2μs (Turn –on)
100V 200V VCE
Fig.3 4. A power diode (ideal in blocking and switching) is capable of dissipating 75 W. For square wave operation shown in Fig.4, it is rated for peak current of 100A and 135A at duty ratios 0.5 and 0.33 respectively. Evaluate the ON state resistance and voltage drop of the diode. The above diode while dissipating 40W at an ambient temperature of 35oC, is running with a case and junction temperature of 75oC and 125oC respectively. Evaluate the thermal resistances of the device. (3M) I 135 A D=0.33
t I 100 A D=0.5 t Fig.4 5. A power MOSFET (IRFP4768) carries a current as shown in Figure.5. Evaluate the average conduction loss in the device (Refer Datasheet). (3M)
