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Prelim Exam With Answer

This document contains a prelim exam in Electronics 2 consisting of two tests. Test 1 has 10 multiple choice questions testing concepts like transistor operation, MOSFET regions, and transistor construction. Test 2 has 3 solving questions calculating values like input and output impedances, voltage gains, and signal gains for various transistor circuits. Students are to write their answers on the provided answer sheet showing computations where required.

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Roman Ramirez
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165 views4 pages

Prelim Exam With Answer

This document contains a prelim exam in Electronics 2 consisting of two tests. Test 1 has 10 multiple choice questions testing concepts like transistor operation, MOSFET regions, and transistor construction. Test 2 has 3 solving questions calculating values like input and output impedances, voltage gains, and signal gains for various transistor circuits. Students are to write their answers on the provided answer sheet showing computations where required.

Uploaded by

Roman Ramirez
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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SCHOOL OF ENGINEERING, ARCHITECTURE, INTERIOR DESIGN

AND INFORMATION TECHNOLOGY EDUCATION


Electronics Engineering Department
Second Semester A.Y. 2020-2021
Prelim Exam in Electronics 2

NAME: ____________________________________ CODE: _____________________

TEST 1: Multiple Choices. 2 points each. Type/write the letter of your choice on the answer
sheet provided at the last page.

1. For proper operation, the____________________ is forward-biased and the


_____________________ is reverse-biased.
a. base-emitter junction, collector-emitter junction
b. base-emitter junction, base-collector junction
c. collector-base junction, base-emitter junction
d. collector-emitter junction, collector-base junction
2. The ______ stage provides a moderate voltage gain, a moderate input impedance, and a
moderate output impedance.
a. common-drain
b. common-collector
c. common-base
d. common-emitter
3. MOSFETs operate in the ________ region if the drain voltage is more than one threshold
below the gate voltage.
a. Triode
b. Diode
c. negative resistance
d. constant current
4. A measure of the small-signal performance of voltage-dependent current sources is the
_____________ defined as the change in the output current divided by the change in the
input voltage.
a. Impedance
b. Conductance
c. Transconductance
d. Reluctance
5. The impedance seen looking into the gate of a MOSFET is equal to ________?
a. Infinity
b. r0
c. 1 / gm
d. Zero
6. Stacking a transistor atop another forms a _______ structure, resulting in a high output
impedance.
a. Darlington
b. Stack
c. Cascade
d. Cascode
7. The flow of electron in a NPN transistor when used in electronic circuit is from _______?
a. collector to base
b. emitter to base
c. emitter to collector
d. base to emitter

ELECTRONICS 2 1
8. Which of the three regions/areas in a transistor that is the smallest in construction?
a. Emitter
b. Collector
c. Base
d. All are equal
9. The region or area in a transistor that is heavily doped?
a. At the junction
b. Collector
c. Emitter
d. Base
10. The ratio of the total width of the outer layers to that of the center layer in a BJT
transistor.
a. 100:1
b. 150:5
c. 150:1
d. 1:150

TEST 2: Solving: 10 points each. Write/type your answer on the answer sheet provided at the
last page.

1. Compute for Zi, Zo and Av nl for the circuit shown with β=100

ELECTRONICS 2 2
2. Compute Vo1 ( dc condition ) , Av L and Av s with β 1=120, β 2=100, β 3=70, R s=0.3 kΩ
and R L=3 kΩ.

3. Compute Av NL , Av L and Av s with β 1=100, β 2=90 , β 3=110, R s=0.2 kΩ and


R L=3.6 kΩ.

ELECTRONICS 2 3
SCHOOL OF ENGINEERING, ARCHITECTURE, INTERIOR DESIGN
AND INFORMATION TECHNOLOGY EDUCATION
Electronics Engineering Department
Second Semester A.Y. 2020-2021
Prelim Exam in Electronics 2

ANSWER SHEET

NAME: ____________________________________ CODE: _____________________

TEST 1 TEST 2

1. b 1. Zi = 106.41 Ω

2. d Zo = 3.3k Ω

3. a Av nl= 3084.11

4. c 2. Vo1= 20 V

5. a Av L= -2.28

6. d Av s= -1.66

7. c 3. Av nl= 1564

8. c Av L= -2.4

9. c Av s= -1.45

10. c

ELECTRONICS 2 4

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