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Eprmex 02

This document describes the simulation of an EEPROM cell using Silvaco software. It defines the materials and doping profiles of various regions that make up the cell. It then performs simulations to extract the initial threshold voltage, simulate the programming process by applying voltages, and extract the final threshold voltage and shift caused by programming.

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Lovely Roy
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60 views4 pages

Eprmex 02

This document describes the simulation of an EEPROM cell using Silvaco software. It defines the materials and doping profiles of various regions that make up the cell. It then performs simulations to extract the initial threshold voltage, simulate the programming process by applying voltages, and extract the final threshold voltage and shift caused by programming.

Uploaded by

Lovely Roy
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as TXT, PDF, TXT or read online on Scribd
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# (c) Silvaco Inc.

, 2019
go devedit

region reg=1 mat=Silicon color=0xffc000 pattern=0x3 Z1=0 Z2=3 \


points="0,0 0.25,0 0.5,0 0.6,0 0.7,0.2 0.8,0.3 1,0.3 1,2 0,2 0,0"
#
impurity id=1 region.id=1 imp=Boron color=0x906000 \
x1=0 x2=0 y1=0 y2=0 \
peak.value=2e+16 ref.value=0 z1=0 z2=0 comb.func=Multiply \
rolloff.y=both conc.func.y=Constant \
rolloff.x=both conc.func.x=Constant \
rolloff.z=both conc.func.z=Constant

region reg=2 mat="Silicon Oxide" color=0xff pattern=0x1 Z1=0 Z2=3 \


points="0,-0.01 0.25,-0.01 0.5,-0.01 0.55,-0.03 0.6,-0.05 0.7,-0.2 0.8,-0.3
1,-0.3 1,0.3 0.8,0.3 0.7,0.2 0.6,0 0.5,0 0.25,0 0,0 0,-0.01"

region reg=3 mat="Silicon Nitride" color=0xffff pattern=0x2 Z1=0.5 Z2=2.5 \


points="0,-0.11 0.5,-0.11 0.6,-0.15 0.7,-0.3 0.8,-0.4 1,-0.4 1,-0.3 0.8,-0.3
0.7,-0.2 0.6,-0.05 0.55,-0.03 0.5,-0.01 0.25,-0.01 0,-0.01 0,-0.05 0,-0.08 0,-0.11"

region reg=4 name=ContGate mat=PolySilicon elec.id=1 color=0xffff00 pattern=0x4


Z1=1 Z2=2 \
points="0,-0.21 0.5,-0.21 0.6,-0.25 0.7,-0.4 0.8,-0.5 1,-0.5 1,-0.4 0.8,-0.4
0.7,-0.3 0.6,-0.15 0.5,-0.11 0,-0.11 0,-0.21"

region reg=5 name=Floating mat=PolySilicon elec.id=2 color=0xffff00 pattern=0x4


Z1=1 Z2=2 \
points="0,-0.08 0.5,-0.08 0.55,-0.06 0.55,-0.03 0.5,-0.01 0.25,-0.01 0,-0.01
0,-0.05 0,-0.08"

region reg=6 name=Source mat=Aluminum elec.id=3 color=0xffc8c8 pattern=0x6 Z1=0


Z2=0.5 \
points="0,-0.05 0.25,-0.05 0.25,-0.01 0.25,0 0,0 0,-0.01 0,-0.05"

region reg=7 name=Drain mat=Aluminum elec.id=4 color=0xffc8c8 pattern=0x6 Z1=2.5


Z2=3 \
points="0,-0.05 0.25,-0.05 0.25,-0.01 0.25,0 0,0 0,-0.01 0,-0.05"

region reg=8 name=substrate mat=Aluminum elec.id=5 work.func=0 color=0xffc8c8


pattern=0x7 Z1=0 Z2=3 \
points="0,2 1,2 1,2.1 0,2.1 0,2"

impurity id=1 imp=Boron color=0x906000 \


x1=0 x2=0.5 y1=0.05 y2=0.05 \
peak.value=1e+17 ref.value=0 z1=0 z2=3 comb.func=Multiply \
rolloff.y=both conc.func.y=Gaussian conc.param.y=0.05 \
rolloff.x=both conc.func.x="Error Function" conc.param.x=0.05 \
rolloff.z=both conc.func.z=Gaussian conc.param.z=1
impurity id=2 imp=Boron color=0x906000 \
x1=0.5 x2=1 y1=0.4 y2=0.4 \
peak.value=1e+17 ref.value=0 z1=0 z2=3 comb.func=Multiply \
rolloff.y=both conc.func.y=Gaussian conc.param.y=0.05 \
rolloff.x=both conc.func.x="Error Function" conc.param.x=0.05 \
rolloff.z=both conc.func.z=Gaussian conc.param.z=1
impurity id=3 imp=Arsenic color=0x906000 \
x1=0 x2=0.3 y1=0 y2=0 \
peak.value=1e+20 ref.value=0 z1=0 z2=1.2 comb.func=Multiply \
rolloff.y=both conc.func.y=Gaussian conc.param.y=0.08 \
rolloff.x=both conc.func.x="Error Function" conc.param.x=0.08 \
rolloff.z=both conc.func.z="Error Function" conc.param.z=0.08
impurity id=4 imp=Arsenic color=0x906000 \
x1=0 x2=0.3 y1=0 y2=0 \
peak.value=1e+20 ref.value=0 z1=2 z2=3 comb.func=Multiply \
rolloff.y=both conc.func.y=Gaussian conc.param.y=0.03 \
rolloff.x=both conc.func.x="Error Function" conc.param.x=0.05 \
rolloff.z=both conc.func.z="Error Function" conc.param.z=0.05

# Set Meshing Parameters


#
base.mesh height=0.5 width=0.5
#
bound.cond !apply max.slope=28 max.ratio=300 rnd.unit=0.001 line.straightening=1
align.points when=automatic
#
imp.refine imp="Arsenic" sensitivity=1
imp.refine min.spacing=0.03 z=0
#
constr.mesh max.angle=90 max.ratio=300 max.height=1 \
max.width=1 min.height=0.0001 min.width=0.0001
#
# Perform mesh operations
#
Mesh Mode=MeshBuild
Refine Mode=X P1=0.88,0.33 P2=0.89,0.64
Refine Mode=Y P1=0.33,-0.46 P2=0.33,-0.46
Refine Mode=X P1=0.07,-0.004 P2=0.30,0.49
Refine Mode=X P1=0.07,0.004 P2=0.20,0.52
Refine Mode=Both P1=0.27,-0.16 P2=0.27,-0.16
Refine Mode=Y P1=0.013,-0.005 P2=0.44,0.012
Refine Mode=Y P1=0.012,0.008 P2=0.46,0.01
Refine Mode=Y P1=0.02,0.08 P2=0.33,0.09

imp.refine imp="Arsenic" sensitivity=1


imp.refine min.spacing=0.03 z=0

constr.mesh max.angle=90 max.ratio=300 max.height=1 \


max.width=1 min.height=0.0001 min.width=0.0001

z.plane z=0.5 spacing=0.25


#
z.plane z=1 spacing=0.125
#
z.plane z=2 spacing=0.1
#
z.plane z=2.5 spacing=0.25
#
z.plane max.spacing=1000000 max.ratio=1.5

base.mesh height=0.5 width=0.5

bound.cond !apply max.slope=28 max.ratio=300 rnd.unit=0.001 line.straightening=1


align.Points when=automatic
structure outf=eprmex02_0.str

go atlas

# Electrode #1 Control gate


# Electrode #2 Floating gate
# Electrode #3 Source
# Electrode #4 Drain
# Electrode #5 Substrate

# Set workfunction for the poly gates,

contact num=2 n.polysilicon floating


contact num=1 n.polysilicon

#Define some Qss...


interface qf=3e10

models srh cvt hei

######### This is the Vt Test before programming #############


##############################################################
solve init
method gummel newton trap maxtraps=8

log outf=eprmex02_1.log
solve v4=0.5
solve vstep=0.5 vfinal=25 electr=1 comp=4.e-5 e.compliance=4

# plot idvg

tonyplot eprmex02_1.log -set eprmex02_1.set


# extract vt
extract name="initial vt" ((xintercept(maxslope(curve(v."ContGate",i."Drain"))))-
abs(ave(v."Drain"))/2.0)

######### This is the Programming/Writing Transient ###########


###############################################################

method newton trap maxtraps=8


log off

#ramp the control gate to 12 V. Have verified that the Fowler-Nordheim


# tunneling current is negligible for this gate bias, so omit.

solve init
solve v1=3 nocurrent
solve v1=6 nocurrent
solve v1=9 nocurrent
solve v1=12 nocurrent

# ramp up drain voltage

method newton trap maxtraps=8


log outf=eprmex02_2.log master
# If drain bias is any higher, the hot electrons tend to return to the drain
# instead of floating gate

solve v4=5.0 ramptime=1e-9 tstep=1e-11 tfinal=1e-9

# keep voltages constant and perform transient programming


solve tstep=1e-9 tfinal=1.e-6
# plot programming curve
tonyplot eprmex02_2.log -set eprmex02_2.set

######### This is the Vt Test After Programming ###########


###########################################################

method gummel newton trap maxtraps=8

log outf=eprmex02_3.log
solve init
solve v4=0.5
solve vstep=0.5 vfinal=25 electr=1 comp=4.e-5 e.compliance=4
# plot new idvg overlaid on old one
tonyplot -overlay eprmex02_1.log eprmex02_3.log -set eprmex02_3.set
# extract vt and vt shift
extract name="final vt" ((xintercept(maxslope(curve(v."ContGate",i."Drain"))))-
abs(ave(v."Drain"))/2.0)
extract name="vt shift" ($"final vt" - $"initial vt")

quit

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