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TC4420
TC4429

6A HIGH-SPEED MOSFET DRIVERS

FEATURES GENERAL DESCRIPTION

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■ Latch-Up Protected ............. Will Withstand > 1.5A The TC4420/4429 are 6A (peak), single output MOSFET
Reverse Output Current drivers. The TC4429 is an inverting driver (pin-compatible
■ Logic Input Will Withstand Negative Swing Up with the TC429), while the TC4420 is a non-inverting driver.
to 5V These drivers are fabricated in CMOS for lower power, more
■ ESD Protected ..................................................... 4kV efficient operation versus bipolar drivers.
■
■
Matched Rise and Fall Times ...................... 25nsec
High Peak Output Current ......................... 6A Peak
Both devices have TTL-compatible inputs, which can be
driven as high as VDD + 0.3V or as low as – 5V without upset 3
■ Wide Operating Range .......................... 4.5V to 18V or damage to the device. This eliminates the need for
■ High Capacitive Load Drive ..................... 10,000 pF external level shifting circuitry and its associated cost and
■ Short Delay Time .................................. 55nsec Typ size. The output swing is rail-to-rail ensuring better drive
■ Logic High Input, Any Voltage ............. 2.4V to VDD voltage margin, especially during power up/power down
■ Low Supply Current With Logic "1" Input ... 450µA sequencing. Propagational delay time is only 55nsec (typ.)
■ Low Output Impedance .................................... 2.5Ω and the output rise and fall times are only 25nsec (typ.) into
■ Output Voltage Swing to Within 25mV of Ground
or VDD
2500pF across the usable power supply range.
Unlike other drivers, the TC4420/4429 are virtually
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latch-up proof. They replace three or more discrete compo-
APPLICATIONS nents saving PCB area, parts and improving overall system
reliability.
■ Switch-Mode Power Supplies
■ Motor Controls
■ Pulse Transformer Driver ORDERING INFORMATION
■ Class D Switching Amplifiers
Part No. Logic Package
Temp.
Range 5
FUNCTIONAL BLOCK DIAGRAM TC4420CAT Noninverting 5-Pin TO-220 0°C to +70°C
VDD TC4420COA Noninverting 8-Pin SOIC 0°C to +70°C
TC4420CPA Noninverting 8-Pin PDIP 0°C to +70°C
500 µA TC4429
TC4420EOA Noninverting 8-Pin SOIC – 40°C to +85°C
300 mV TC4420EPA Noninverting 8-Pin PDIP – 40°C to +85°C
OUTPUT TC4420IJA
TC4420MJA
Noninverting
Noninverting
8-Pin CerDIP –25°C to +85°C
8-Pin CerDIP – 55°C to +125°C 6
INPUT TC4429CAT Inverting 5-Pin TO-220 0°C to +70°C
4.7V TC4420
TC4429COA Inverting 8-Pin SOIC 0°C to +70°C
GND
TC4429CPA Inverting 8-Pin PDIP 0°C to +70°C
EFFECTIVE
INPUT
C = 38 pF
TC4429EOA Inverting 8-Pin SOIC – 40°C to +85°C
TC4429EPA Inverting 8-Pin PDIP – 40°C to +85°C
PIN CONFIGURATIONS
TO-220-5 8-Pin DIP 8-Pin SOIC
TC4429IJA
TC4429MJA
Inverting
Inverting
8-Pin CerDIP – 25°C to +85°C
8-Pin CerDIP – 55°C to +125°C 7
VDD 1 8 VDD VDD 1 8 VDD

INPUT 2 7 OUTPUT INPUT 2 7 OUTPUT

TC4420 NC 3 TC4420 6 OUTPUT NC 3 TC4420 6 OUTPUT
TC4429 TC4429 TC4429
GND 4 5 GND GND 4 5 GND
Tab is
Connected
to VDD
NOTE: Duplicate pins must both be connected for proper operation.
INPUT
GND
VDD
GND
OUTPUT

TC4420/9-6 10/18/96
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TELCOM SEMICONDUCTOR, INC. 4-225
 6A HIGH-SPEED MOSFET DRIVERS

TC4420
TC4429

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ......................................................... +20V Storage Temperature Range ................ – 65°C to +150°C
Input Voltage ............................................... – 5V to > VDD Operating Temperature (Chip) .............................. +150°C
Input Current (VIN > VDD) .........................................50mA Operating Temperature Range (Ambient)
Power Dissipation, TA ≤ 70°C C Version ............................................... 0°C to +70°C
PDIP ...............................................................730mW I Version ........................................... – 25°C to +85°C
SOIC ...............................................................470mW E Version .......................................... – 40°C to +85°C
CerDIP ............................................................800mW M Version ....................................... – 55°C to +125°C
5-Pin TO-220 ......................................................1.6W Lead Temperature (Soldering, 10 sec) ................. +300°C
Package Power Dissipation (TA ≤ 70°C) *Static-sensitive device. Unused devices must be stored in conductive
5-Pin TO-220 (With Heat Sink) .........................1.60W material. Protect devices from static discharge and static fields. Stresses
Derating Factors (To Ambient) above those listed under "Absolute Maximum Ratings" may cause perma-
PDIP ............................................................. 8mW/°C nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
SOIC ............................................................. 4mW/°C
indicated in the operation sections of the specifications is not implied.
CerDIP ....................................................... 6.4mW/°C Exposure to absolute maximum rating conditions for extended periods may
5-Pin TO-220 .............................................. 12mW/°C affect device reliability.
Thermal Impedances (To Case)
5-Pin TO-220 RθJ-C ........................................ 10°C/W

ELECTRICAL CHARACTERISTICS: TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.
Symbol Parameter Test Conditions Min Typ Max Unit
Input
VIH Logic 1 High Input Voltage 2.4 1.8 — V
VIL Logic 0 Low Input Voltage — 1.3 0.8 V
VIN (Max) Input Voltage Range –5 — VDD+0.3 V
IIN Input Current 0V ≤ VIN ≤ VDD – 10 — 10 µA
Output
VOH High Output Voltage See Figure 1 VDD – 0.025 — — V
VOL Low Output Voltage See Figure 1 — — 0.025 V
RO Output Resistance, High IOUT = 10 mA, VDD = 18V — 2.1 2.8 Ω
RO Output Resistance, Low IOUT = 10 mA, VDD = 18V — 1.5 2.5 Ω
IPK Peak Output Current VDD = 18V (See Figure 5) — 6 — A
IREV Latch-Up Protection Duty Cycle ≤ 2% 1.5 — — A
Withstand Reverse Current t ≤ 300 µs
Switching Time (Note 1)
tR Rise Time Figure 1, CL = 2500 pF — 25 35 nsec
tF Fall Time Figure 1, CL = 2500 pF — 25 35 nsec
tD1 Delay Time Figure 1 — 55 75 nsec
tD2 Delay Time Figure 1 — 55 75 nsec
Power Supply
IS Power Supply Current VIN = 3V — 0.45 1.5 mA
VIN = 0V — 55 150 µA
VDD Operating Input Voltage 4.5 — 18 V

4-226 TELCOM SEMICONDUCTOR, INC.