Devices and Sensors Applicable to 5G System

Implementations
Breandán Ó hAnnaidh, Padraig Fitzgerald, Helen Berney, Ramji Barry Mulvey
Lakshmanan, Nigel Coburn, Shane Geary Dept. Electronic Engineering
Process Development, Analog University College Dublin
Raheen Industrial Estate Dublin, Ireland
Limerick, Ireland
E-mail: [email protected]

Abstract—This paper describes some of the device

technologies currently in development at Analog Devices, II. RF MEMS SWITCH
focusing on key areas for future integration within the 5G
ecosystem. Three distinct device technologies are examined that A. Actice Open MEMs device
will enhance and enable system implementation and are for use Presented at this workshop is a DC (0Hz) to over 26GHz
in dedicated applications. The first is a state-of-the-art RF MEMs (K-Band), ultra-long on lifetime single pole dual throw (SPDT)
switch, the second, an Energy Harvester for IoT applications and MEMS switch used with integrated driver circuitry. The switch
the third, an RF SAW filter. exhibits 1dB of insertion loss and 23dB of off isolation at
Keywords—5G; IoT, RF MEMs; SAW; Energy Harvester
26GHz.
The RF properties achievable by MEMS switch are very
I. INTRODUCTION suitable for 5G as they are very linear devices, with low loss
and high bandwidths that can deal with the power
With the advent of the Internet of Things (IoT) and the goal requirements. Key specifications which give ADI MEMS an
to enable the next generation mobile network, 5G, there have advantage over other switching technologies for 5G are its
been advancements in both microelectronic circuits and device Linearity with IIP3 of 69dBm and the power handling
technologies to achieve this. This paper focuses on three capability of >36dBm.
device technologies and their components, ranging from
RF/Microwave micro-electro-mechanical systems (MEMS) A three dimensional representation of the Active-Open
devices, to Energy harvesting for IoT sensors. MEMS Device [2] is shown in Fig. 1 along with corresponding
SEM micrograph image of a fabricated device. Two gate
For this workshop paper on ADI developments, Section II electrodes are positioned at the back and front of the beam,
will outline the RF MEMs switch device and the design which enable the beam to be closed and opened
requirements to achieve the desired RF focusing primarily on electrostatically by applying an appropriate voltage to the
the device construction and the advancements in RF respective control electrode.
performance.
Section III will focus on the Energy Harvester for IoT
applications. The Energy Harvester discussed is a
Thermoelectric Energy Generator (TEG) device.
Thermoelectric energy harvesters are devices that use small
amounts of otherwise wasted energy (heat in this case) to
generate usable electrical power. This power in turn is targeted
towards industrial applications as part of a zero pin sensor
initiative designed to generate enough power (~400μW) from a
temperature drop of about 10°C to power a wireless sensor Fig. 1. Three dimensional model and SEM micrograph of the active open
node. All of the power required by the sensor node is generated MEMS switch.
by mounting the node onto a heated surface (for example,
pumps, motors, water heaters, pipes). This MEMS switch die is constructed using a high
resistivity silicon wafer, on which CMOS compatible
Section IV will investigate the RF Surface Acoustic Wave interconnects including poly-silicon, aluminum, and tungsten
(SAW) filter developments [1]. These interdigital transducers are processed in a silicon-dioxide dielectric, to form the
(IDTs) will act as the RF passive MEMs filter targeting passive electrical interconnects to the switching device. The switch
Wake-up applications. device is then micro-machined on top of this dielectric, using
special non-stick contact metals and plated gold, which is
subsequently released using a metal sacrificial layer. The
switch device is then encapsulated in a silicon housing for
protection, using wafer level seal glass capping. It represents

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an enhancement on the novel MEMS switch which has
recently been commercialized, and was first reported at IMS
2015 [3]. The above flow was driven by both reliability, and
compatibility with the wafer fabrication site.

B. RF Performance
Achieving an RF bandwidth of 26GHz in a plastic package,
Fig. 2, required significant effort in minimizing wire bond
inductance. The inductance of the wire bonds was reduced to
~300pH using multiple paralleled wire bonds, and configuring
the package design to shorten the span of the wires as much as
possible. A tuned matching capacitance was then created
(~120fF) on the MEMS die which created a 50Ω match to the
wire bond inductance, thus minimizing reflections and return
loss. This matching capacitance value required is calculated
using (1). The cut-off frequency of the LC resonator, created Fig. 3. Off isolation as a function of Csd (source to drain capacitance).
from the wire bonds and the matching capacitance at the bond
pad, is calculated to be 26.48GHz, using (2).
III. THERMOELECTRIC ENERGY GENERATOR
Thermoelectric energy harvesting devices enable self-
powered systems for IoT applications bringing sensors to
places previously thought impractical or inaccessible. They
also reduce operating expense and maintenance cost of battery
replacement. The device in focus here converts waste heat into
electrical energy through the Seebeck effect, Fig. 4.

Fig. 2. Three dimensional model and SEM micrograph of the active open
MEMS switch.

Ζ0 = √(L/C) (1)
Fresonance = 1/[2π√(LC)] (2)

The isolation specification of the device is dominated by Fig. 4. Conversion of waste heat to energy using thermoelectric effect.
the input to output capacitance of the switch, which is made up
of three primary components at the switch level; the Analog devices chipscale thermoelectric energy harvesting
capacitance from the tip to the drain contact, the capacitance devices have significant advantages compared to discrete
from the beam to the drain region, and the capacitance from the devices
source region to the drain through the substrate. Significant • Small device area (10mm2)
effort was made to minimize all these capacitances, with a
level of less than 5fF being achieved. • Low-cost
Equation (3) can be used to calculate the resistive reactance • Microfabrication: Hundreds to thousands of TE legs
(Xc) of a capacitor at a given frequency where f is the
frequency of interest, and C is the off state capacitance of the • High device thermal resistance: Optimize ΔT captured
switch. Equation (4) can be used to calculate the transmission • High output voltage: Maximize efficiency of power
coefficient (off-isolation) through the device dependent on the management
reactance [4], and the characteristic impedance of the system
The current technology demonstrator combines low power
XC = 1/(2πfC) (3) (1) power management and radio module with the
sensors,
S21 = −20log10(1+ XC/2Z0) (4) thermoelectric energy harvesters for machine health
monitoring. The system is mounted in a housing which
Fig. 3 shows a plot of expected off isolation versus combines the thermal contact to the heat source and the heat
frequency for various capacitances, representing the coupling sink, Fig. 5.
capacitances through the switch. It can be seen that a
capacitance of less than 4fF is required to generate an isolation
of approximately 25dB at 26GHz.

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 A typical task sequence for IoT node using thermoelectric
energy harvesting as a power source is shown in Fig.6. Power
consumption can be optimised by component and also by data
transmission rates and transmission modes.

Fig. 7. RF Passice Wake-Up circuit Product Concept.

Fig. 5. Wireless sensor node demonstrator for machine health.

Fig. 8. SEM images and transmission response of a SAW filter, with 200 nm
spacing (λ = 0.8 μm), and a 5.6 GHz resonance frequency [5]

CONCLUISION
This workshop paper outlines three device technologies in
Fig. 6. Task sequence example for IoT node. development for implementation into the 5G ecosystem and
expansive Internet of Things. A RF MEMs switch design was
Energy harvesting is critical as an alternative power source discussed, with supporting measurement data, exhibiting
for systems within the Internet of Things. Combining the use excellent RF performance with only 1dB of insertion loss at
of waste heat, low power sensors and efficient power 26GHz. A Thermoelectric Energy Harvester for IoT
management solutions enables the proliferation of sensor nodes applications was introduced along with applications including
for IoT. machine health monitoring. Finally, RF SAW Filter designs
and applications were introduced along with the challenges and
IV. RF SAW FILTER limitations in present technologies.
The RF SAW filter investigated here is to target use in a
Passive RF Wake-up system such as in Pacemaker telemetry in REFERENCES
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