Low Power NPN Transistor: General Features
Low Power NPN Transistor: General Features
Low Power NPN Transistor: General Features
General features
■ Silicon epitaxial planar NPN medium voltage
transistor 2
■ SOT-223 plastic package for surface mounting
circuits
3
■ Available in tape & reel packing 2
1
■ In compliance with the 2002/93/EC European
Directive
SOT-223
■ The PNP complementary type is BCP53-16
Applications
■ Medium voltage load switch transistor
■ Output stage for audio amplifiers circuits Internal schematic diagram
■ Automotive post-voltage regulation
Order codes
Part Number Marking Package Packing
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
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BCP56-16 Electrical ratings
1 Electrical ratings
IC Collector current 1 A
ICM Collector peak current (tP < 5ms) 1.5 A
IB Base current 0.1 A
IBM Base peak current (tP < 5ms) 0.2 A
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Electrical characteristics BCP56-16
2 Electrical characteristics
Collector-emitter
V(BR)CEO (2) breakdown voltage IC = 20mA 80 V
(IB =0)
Collector-base
V(BR)CBO breakdown voltage IC = 100µA 100 V
(IE =0)
Emitter-base breakdown
V(BR)EBO IE = 10µA 5 V
voltage (IC =0)
Collector-emitter
VCE(sat) (2) IC = 500mA IB = 50mA 0.5 V
saturation voltage
IC = 5mA V CE = 2V 40
hFE (2) DC current gain IC = 150mA V CE = 2V 100 250
IC = 500mA V CE = 2V 25
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BCP56-16 Electrical characteristics
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Package mechanical data BCP56-16
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BCP56-16 Package mechanical data
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.80 0.071
e 2.30 0.090
e1 4.60 0.181
V 10o 10o
A1 0.02
P008B
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Revision history BCP56-16
4 Revision history
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BCP56-16
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