BarCharts, Inc.® PART 1 of FUNDAMENTALS OF ELECTRONIC DEVICES AND BASIC ELECTRONIC CIRCUITS WORLD'S é] ACADEMIC OUTLINE, eS eS se eee as ELECTRONIC CIRCUITS ‘An eecuonie cieuit i an nformation-bearng sana processing neswork formed by interconnections of passive Components andor active devices Passive Components Resins, capacion and induces | “Active Devies (rene source eves) = transis, ‘neal-oxide semiconductors, ee. letronle System: An strangement of components (passive elements andor active devices) with aspect | Input sgml producing defined output stm Sigal Procesng Funcionly clonic creitsand tes | proces tein ipa Conmen pocesing ius “ampliaton (magnification) negration “biterentaion ELECTRICAL SIGNAL *Hlectrcal signal isan inforstion-baring decile ch a volgs or een) ed from tometer (0 ce igual vag vere Oya ‘mcrpine) Sigua prcening ret prose he ‘lca pl a prdoeminsd marr a0 eal toreony oft inkerntn tion nt Sil ome ane epee ; STaeveatns equa creat, Fi ‘Avsignl source repreverted Theveia Cit, begs eer 9 en “0 erie'seqeralet droit A ‘hea sore i Spiced by 2 @ Sree genie wah St ‘erunee Re Elec niga charted ‘ye amplitade, frequency and hae pace Th ig ia {ime sayigfnctionepeeting the wovestape aes fencon of if time canbe pera (oth = {hte pod Ts hat equa £=1/T) tan be Speviale conn waver tsi fever wae ‘ms of dito equ” A pro inal wi ‘Smpltemeope (of wancform fara drt petra Sf monic (ents) wave forms of ape i tect by Poste oe eee ee ‘Tovefom has 8 connuous spectrum of hemo omponen sper Fara tor camps of sil Yoreson ‘ty Power sons and Feuer Pi 2 ‘or: A pecs, ure Series ‘esl ial ea repre by 8 mpeg: lon of nate moe amine ne andr core) wens me ep Fre esanson ‘fas wave hg 2) a ‘An aperiodic waveorm repesning an whivary tine waning] Signal canbe depicted by Fourier wanton (Fi 3) Four ies and Fourier transform fepesentains of signals ‘enable desctiton of the spectral components (quency ‘component constiing the sigal shown Fes ower Tram ww ‘wen i ¢ Cowra Rina ma es) = A600) + 50540 +o requeney distortion: Due 1 the preseace of eapacive (C) andr inductive (L) elements inthe ect compe sigh (composed of a specrum of several feqency componens) ‘wl ice fering of ts component, inasmuch asthe eatances ‘Mere hy C andlor L elements ae foqueney-dependent. Aa 1 raul the wanafer faction relating the input andthe ouput ‘would vary as faction of equeney EX: A voltage amplifier which s expected to provides constant volge gain (cutpt voliage 1 input voltage Fao) for any feqpeecy ofthe pu sign! muy yd 8 varying pain versa ffequency plots shown Fig). The drooping ofA (gin) vers {fequncy) crv at hgh (HF) and low (LF) fequnces i, for ‘eample, de to low rentace of th dust eapectance Cp and high ectance of series capacitance Cy respectively Pes ‘Ependen. Fo a complex input signal (wih 2 Frequency components) the phase ange (0) of bos Teel should be mininized (high ignal-tvnose aio), DIODES: IDEAL & PRACTICAL VERSIONS 1A de i 2 0" pig g ‘exit, unateral rice Kelly, aaa coda ety oe doin = epee ‘ conniornee | ‘ ‘oposte recon Scand in P| Cmte comet tA + os ¥ cece wiectstiend 2, Slement ich awa [YY ‘cr and fan + Be eek va Naaiy coe stare te frye acre rebel poe pun rts esto a Trike rvere Bs ont rings ep eel |p rowed ode, ve seal comer cet el eee pees here ato rm ee ‘del diode. “A practical diode (Guth as 2 semicon- ‘uct ioe) has ‘20, Als, nthe forward bi, invariably, thee i al Nolage Vy (nova a threold or cut otge) | T ‘whch therein current conduction in prac ode DIODES AS CIRCUIT ELEMENTS |7 Basie applications of diodes: circuit element under rw bie and bebaves 5 ah open cuit when reverse biased Its ste is Set by the breakpoint and 1-0. Por iarated (Pie 7) Rag=Eauivalent represen _|-¥>0\_ tation of the switches Snall Ry=Forward resistance ‘ofthe diode nae R,=Reverse resistance ofthe diode RB=Reverse bias Rectifier A diode canbe wed to cect the abet | current waveform (oh bipolar) to 4 one decor ‘waveform. A simple halfwave ete i ilseated in Fi [The caren rough he ad esis Ry oly di prniive hlfeyle a he dds conduct (Tews sed Fen vag) som Ronee rect | Fig 0 )Diodes as Circuit Elements continued dd irc an be design ciple volage above] ‘erin vale. Thali the cit wil iit vllage input ‘maximus level. Te per cic and waveform Vz i div scqued Kine ener by minority caries which can bea fovalent bonds y olson. Ths wevzaton procs ale fsvalanche breakdown, which sever, Again care an be ited only by extemal esis FORWARD BIASED PN JUNCTION: The fooerd bis vollage Vp ectively decreases Vp, thereby fing p> fe Therefore a scady sate extra cuentas Ip is deidd by the extent of thamal energy Ve Ka) (ky: Botzmaon const, T: temperature and glen tharge). Canesponding tothe revene ston caret Tymleexp(Vn Ve) Misa sel factor sich tht T= (foe Ge, 2 or The forward ever Vp charters 1 thefove: y= espn) -1). Ve BO26V for ee, forward bss voltae teow which I the curently small. Tas Vonage Vinh fie Ge, 8 for i and“ or Sehothy-barie diodes 160 Sligo at oom temperate (Fe 16. CUTIN” VOLTAGE: | Som theahold is called cutie volge a Type. at woe tempore. QI 88 ShrFULL-WAVE RECTIFIER (WITH A CENTER-TAPPED TRANSFORMER) As shown in Fig 18a the ceterapped transformer provides Fe eae tears Casey ee ‘ener ap) with 180 pha ference ‘This faites te dodes Dy and Ds to conduct ae ively overeat bal eye, With capacitor shunting the lad ae Re wy = Yat tee av EE £2 hequeney applied a Ripple tor = Poa inverse volage~2x peak secondary vltage Fig Ha FullWave Rectifier Circuits ig. 188 Wee (6¥ FULL-WAVE BRIDGE RECTIFIER Fig. 198 [As shown in Fig. 19, tis doesnot need cetepped| rancormer, bu rete 4 ods. Depending on the feta faneous voltage polaron atthe secondary winding ends ode prs Ds, Ds) o (Ds, Dy) conduct, fitting 2 fall rave ret veto sro Ry, Peak iver ating Peak secondary volge Ripple characterises: Sure as those of fall-vave reir with enercaped taste. (en a ele HALF-WAVE RECTIFIER In Fig, 2, the tansformer TR bas primary coil of Ne ‘tums anda second cll of Neus Wound ov a io core ‘he excitation a the pimary is coupled to secondary via magi coupling mediated y the om oe eat Bec Int tebe Ele ‘The dade conducts during positive half-yee of secondary llge at decided y the forward nds characteristics During nes hal te eds not conc Telecare GM evar fu), Here, Ve=Vo the forward voltage drop aos he Aide (.7V for I Rite seondary wid sistance, HALF-WAVE RECTIFIER WITH A CAPACITOR FILTER negative hale wih ine comtat 2 spepson ofa de. voluge =¥,~AY and pple PEAK-INVERSE VOLTAGE: (ofa half mave reste: using sesaive halfeyle tbe wal Yllage drop (reverse bin) acon the diode = VageagtVas22Viguay Hence the hode should be chosen sich that its breakdown vlage >> Weg DIODE DISSIPATION RATING: Maximum diode iiption ix decided by (maximum lad-eurent % dnd forward resistance. Diode power rating sbould be well in ‘exces of his dspaton lve Fig, 20, Rectifier Ceci, rm) ci a we yorneiie v o ‘VOLTAGE REGULATION A refer circuit delivering a fond cunt (la) at 2 vokage Vig actos a Toad Ry can be represered by an euler shown (Fig 20) ears = os li Oe s= E_s isthe tal source resinance (contiated by forward essunceof diodes andthe scondary winding resistance o the wansfomer)Var= (Ve~ a Ry) I the lad resistance hangs (ea loud curt demand incest), Vy drops Percentage Reyuaion (PR) = ‘ae mina n o-oa flog codons (ie PR), DIODE ENVELOPE DETECTOR [This ie used in AM radio circuits to recover the low equency audio envelope modulated on 4 high fequeny cari. e()= Vl + cosines by Ao modulating signal frequency: a4 Carer tequency, &>>dq: and me Depth of modulation. Diode Envelope Detector Detected LF signal envelope: et) DIODE VOLTAGE CLAMPS A ngs cn site he erie des bre wien changing sgl want, pote vlag tmp V2Voe vi: Dose ora yohage top. DC Caps level Vana Note ROBE Roy and gave apg ca hind yg aly ofa od tc py of ede ee Fe 28. Fig 22 inde Volage Clamps DIODE CLIPPING CIRCUITS Diode Clipping Crus ¥0) Fig. 24 ‘ZENER REGULATORS Asmplrepacs power spy canbe arid wih ae ide comoced sunt wih tea sown (29 Fig 25 Voltage Regulation IV the uegule vohags athe ouput of he di ectie cei h egsedvlge sme pen ln (Ren oR, ter 8 itr wih can be dele aco a ven reuston in sonunton with = seer de of renown votes ataming le cent thr by ems oF Ry iid fy Vw 1 any When Re te StS P, (power dissipation in the zener diode) = Vgt + Ry Pa pow dpc io B) = PR; Vine™ alone Ve Vente Ratzni* Ve: PR ={VLinn Yimin) 100, Relome Ve: Pam Yl 1,BIPOLAR JUNCTION BUT MODES OF OPERATION PGES Sea SRC pj sa sive | rrwaied | Raven nd nip jacion Detae to Sanat ty tiee| [Sauron |Foruntinod | rarer {1 Bee nonce tong wn et es oF Pesce os es toed wer, tr] [Concer | tormesiond | Reveal | ETF tt colccr Gg 20, Tire te oa of Be es to i et CHARACTERISTICS (83) and. Cllcor-bue junction (CBN see Pg 28, aan Fig. 26 Bipolar Junction Transistors (BUTS) ee % She ey i Reson 7 cet tide ee UNBIASED BJT hen the jncions ae const depletion layers are Formed the PN junctions ith Sepiton ayer pote teres each hom, BIASED BJT In he ave mode operation, EBD is erwa asd and (Cal's evened These extra sings enable the ‘eplon layer pte a EW and CI to he decreased Id incewed spectively. As result Be Towing futenos are aa oe example nthe NPN dice: Far bas on EB allows stun-ectn fom eer Ino tase and hle-injetion rn tase To ernie These "mo jean const th emer erret (Te Ente fletts inthe bse region (whee they ae minoiy fare) difise acs the base wih sine eects ost rough ecombnaton and appearing aa pr of base fren The cole ecto aco he colt d 0 ‘eclectrrral The elecwons wide accra (Oe twtr nc energy) ay break covalent arte eld ‘re cron Thai ecole the 4 mui an poss pean Deis he to of ects Injected rm the enter ewe (emir elec). the {con ofeletons survived i the ison sere the ese (er recombination) asthe basedraniprt factor (bet) and the male! caer the colle a “Tt bess current 4 action of Te. Since his esenily decided by Iino cure! flow across the EB, itis given by ‘ANALYTICAL RELATIONS OF BJT CHARACTERISTICS. Var changes by =(2mVAC Feb lew ole Me a a te Wi bacon" ee } “ ‘SINGLE-BATTERY BIASING: CE CONFIGURATIONS DETERMINATION OF BIASING RESISTOR VALUES. Equation Forms: OPERATING POINT (@-POINT) DETERMINATION Curent Fi 3) Veo" Rag’ Vane Rel Been ieee pe eee ng tea Ins Vero= Wee FeoRo) Fig, 30 Operating Point (Q-Point) Determination VOLTAGE-DIVIDER BIAS: Vea™ Vee~ kale Aeglt+6) MAXIMUM DYNAMIC SWING OF THE SIGNAL lBIASING FOR G-POINT STABILITY UT crus re sensitive to temperature power sup ‘ctations and variations in er (or B) from piece topiee. Such varitions cause Q-point instability. Stabilizing methods include eureat-bas metho, volage-bias. method and voltage-divider method. Writing Lalgrt*Blleno, the second tem isthe leakage cure component eae contain, which Pom eavorae spe ete Bed al el, tt Prova a Hone Vue Voc yt [= © . 4 Vee Woo Rai ry, Ro Rel, t Rs Ani isac tied toa th Res Reve t hy IR. 4. Siagleresitor wit caret biasing: S= (1+ 9) Very Large (Poor Stabiliy) ‘.Curen-bias with emiter resistor Ry s=(148) Tae ter (iy) Volpe ining with olen ere: a: oes RRe vonage vie big 1») Recomended tg val of Sell signal vole ampli 8 ~ Large signa power amplifies: EARLY EFFECT Wi he everse its on CBU, the depletion Iyer would extend into Base (when the bis is increased) thereby reducing the effective base with (Wa). Hence, se ea rinse, Tan aed ho ee witha econ pipe [Common emiter configuration (Fig. 355: Quick Study. H-PARAMETER & HYBRID - 7 PARAMETER MODELS OF BJTS COMMON EMITTER (CE) AMPLIFIER Me Bk han k= Wal a, ‘he CE Shortt input etme = he: pes tg =“ che I: CE Sorte forward curent gain ne: CE Oper-cirsuit uot admitance 7g 35 ete: Common Emitter Configuration RELATION BETWEEN ‘THE PARAMETERS: tm Transfer (mutual conductance = ao Wi Meee elt soe re EE) ‘ey: Bolumann constant "t Elctra harge Selene Bae ws te (2) aaa WV, Wy sare ‘ox® HYBRID - t MODEL: CE CONFIGURATION ig. 36 eb ec Gyimucamcioce [Ti Ty ‘APPROXIMATE RELATION BETWEEN PARAMETERS: comer) Ia he, FlaLFCOMMON BASE (CB) AMPLIFIER AOrPENA qe port i: Sn sR) COMPARISON OF PARAMETERS OF CB, Cae Neer alsas DIFFERENTIAL AMPLIFIERS fea Sore ‘oe bor caret at PEM Swiching sues ig 4 Fig. 41 “Transistor as a Switch Switching tates: (Low voltage & High eurent: a= Tyas: Vo= Vern 10 (igh voltage & Low current: Wy=0: Veoeuom= Voc } Transistor capacitances (Fig. 42: ‘Gy uncon capacitance at CBI + Due wo depletion layer erp) {Ge Dison capsitance st ERY + Due to storage in the base (=100-200pf) Fig. 42 Transistor Capactinces ob " « ola. WARE) RB, Ry Tp Capacitance eect: High fequency gain seduced Parasitic capacane > Due to loads and packaging Pewottteneney are Tey" O cuff equeney: (f= ft a) Is brte-foced at (Vas 0.7) vot Therefore increase in eiter current of wansistr 2 soul caesponingl reduce the emit (and ence, the elles) cent of transisor 1 50 thatthe pte srs Rc Vc remains constant, brt-fred vale. Hence decease i fee ttl tne Joperation and can be modified ae Part? of his two pat clccuonics sis overs Open Amplifiers, Unipolar Devices such at FET and JFET, MOSFETs, Relevant Equivalent Circuits and Frequency Response of FETS, Common-Gute Amplirs, Commen- Source Amplifier and Cornoe-Desin Arpliis Lok fo iat your booksore ISBN-13: 978-157222526-8 Ui ease oe 5 0 quickstudy.com 9 6 lls US. $5.95 rslz05zelllly