MOSIS Scalable CMOS Design Rules

3.
3 Layout Design Rules 117
prevent the ingress of contaminants from the side of the chip (as opposed to the top of the
chip, which is protected by the overglass).
Several other structures are included on a mask including the alignment mark, critical
dimension structures, vernier structures, and process check structures [Hess94]. The mask
alignment mark is usually placed by the foundry to align one mask to the next. Critical
dimension test structures can be measured after processing to check proper etching of nar-
row polysilicon or metal lines. Vernier structures are used to judge the alignment between
layers. A vernier is a set of closely spaced parallel lines on two layers. Misalignment
between the two layers can be judged by the alignment of the two verniers. Test structures
such as chains of contacts and vias, test transistors, and ring oscillators are used to evaluate
contact resistance and transistor parameters. Often these structures can be placed along
the scribe line so they do not consume useful wafer area.
3.3.3 MOSIS Scalable CMOS Design Rules

Class project designs often use the Q-based scalable CMOS design rules from MOSIS
because they are simple and freely available. MOSIS once offered a wide variety of pro-
cesses, from 2 Rm to 180 nm, compatible with the scalable CMOS rules. Indeed, MOSIS
also supports three variants of these rules: SCMOS, SUBM, and DEEP, which are pro-
gressively more conservative to support feature sizes down to 180 nm. Chips designed in
the conservative DEEP rules could be fabricated on any of the MOSIS processes.
As time has passed, the older processes became obsolete and the newer processes have
too many nuances to be compatible with scalable design rules. The MOSIS processes
most commonly used today are the ON Semiconductor (formerly AMI) 0.5 Rm process
and the IBM 130, 90, 65, and 45 nm processes.
The 0.5 Rm process is popular for university class projects because MOSIS Educa-
tional Program offers generous grants to cover fabrication costs for 1.5 mm × 1.5 mm
“TinyChips.” The best design rules for this process are the scalable SUBM rules1 using
Q = 0.3 Rm. Thus, a TinyChip is 5000 Q × 5000 Q. Polysilicon is drawn at 2 Q = 0.6 Rm,
then biased by MOSIS by 0.1 Rm prior to mask generation to give a true 0.5 Rm gate
length. When simulating circuits, be sure to use the biased channel lengths to model the
transistor behavior accurately. In SPICE, the XL parameter is added to the specified tran-
sistor length to find the actual length. Thus, a SPICE deck could specify a drawn channel
length of L = 0.6 Rm for each transistor and include XL = 0 .1Rm in the model file to
indicate a biased length of 0.5 Rm. There is a tutorial at www.cmosvlsi.com on design-
ing in this process with the Electric CAD tool suite. [Brunvand09] explains how to design
in this process with the Cadence and Synopsys tool suites; this flow has a steeper learning
curve but better mirrors industry practices.
Credible research chips need more advanced processes to reflect contemporary design
challenges. The IBM processes are presently discounted for universities, and MOSIS
offers certain research grants as well. The best way to design in these processes is with
the Cadence and Synopsys tools using IBM’s proprietary micron-based design rules. The
design flow is presently poorly documented by MOSIS and ranges from difficult at
the 130 nm node to worse at deeper nodes. Unfortunately, this presently limits access to
these processes to highly sophisticated research groups.
1
Technically, MOSIS has two sets of contact rules [MOSIS09]. The standard rules require polysilicon and
active to overlap contacts by 1.5 Q. Half-lambda rules reduce productivity because they force the designer
off a Q grid. The “alternate contact rules” are preferable because they require overlap by 1 Q, at the expense
of more conservative spacing rules; these alternate rules are used in the examples in this text.

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3 Layout Design Rules 117

3.3.3 MOSIS Scalable CMOS Design Rules

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