Stick Diagrams: Chapter 1 Introduction

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28 Chapter 1 Introduction

VDD VDD Contact


A A B C

Metal1

Y Y pdiff

ndiff

GND GND Polysilicon

(a) (b)
FIGURE 1.43 Stick diagrams of inverter and 3-input NAND gate. Color version on inside front cover.

to each gate. While this increases the size of the cell, it allows free access to all terminals
on metal routing layers.

1.5.5 Stick Diagrams


Because layout is time-consuming, designers need fast ways
to plan cells and estimate area before committing to a full
layout. Stick diagrams are easy to draw because they do not
4h 4h need to be drawn to scale. Figure 1.43 and the inside front
cover show stick diagrams for an inverter and a 3-input
4h 4h
NAND gate. While this book uses stipple patterns, layout
designers use dry-erase markers or colored pencils.
With practice, it is easy to estimate the area of a layout
(b)
from the corresponding stick diagram even though the dia-
4h gram is not to scale. Although schematics focus on transis-
4h tors, layout area is usually determined by the metal wires.
Transistors are merely widgets that fit under the wires. We
define a routing track as enough space to place a wire and the
(a) required spacing to the next wire. If our wires have a width
FIGURE 1.44 Pitch of routing tracks of 4 Q and a spacing of 4 Q to the next wire, the track pitch is
8 Q, as shown in Figure 1.44(a). This pitch also leaves room
for a transistor to be placed between the wires (Figure
1.44(b)). Therefore, it is reasonable to estimate the height
and width of a cell by counting the number of metal tracks
and multiplying by 8 Q. A slight complication is the required
spacing of 12 Q between nMOS and pMOS transistors set
4h by the well, as shown in Figure 1.45(a). This space can be
occupied by an additional track of wire, shown in Figure
12 h 4h 12 h 1.45(b). Therefore, an extra track must be allocated between
4h nMOS and pMOS transistors regardless of whether wire is
actually used in that track. Figure 1.46 shows how to count
tracks to estimate the size of a 3-input NAND. There are
four vertical wire tracks, multiplied by 8 Q per track to give a
(a) (b) cell width of 32 Q. There are five horizontal tracks, giving a
cell height of 40 Q. Even though the horizontal tracks are
FIGURE 1.45 Spacing between nMOS and pMOS transistors
not drawn to scale, they are still easy to count. Figure 1.42

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