360 CHAPTER 4 MOS FIELD-EFFECT TRANSISTORS (MOSFETs)

PROBLEMS
SECTION 4.1: DEVICE STRUCTURE AND in the folowing cases
PHYSICAL OPERATION
and s
4.1 MOS technology is used to fab a

substrate
ca
pacitor, utiliz
the capucitor
2v

ng te gate netalnzaton and the

as
(c) t 5 V and =0,2V
Find the for
clectrodes. arca requirednmperto 40
KIde thickncss Tranging trom
lpFnm.capacitance
For a square
(d) s =5V

apacitor of 10 pE, what maximunm dimensionms utc

SECTION 4.2: CURRENT-VOLTAGE CHARACTERISTICS
needed 4.8 Consider an NMOS transistor that is identical to, except
4.2 A purticutar MOSFET Using same gatc
the iTUETUre and having half the 0
for width of. the transistor whose (p Vps charc
whose ipp
channei length as the transistor whose i-uhn characteristics 1 . te)ransiIstor charac
. How shoukd ihe vertical axis
channel width
are shown in Fig 44 has a channel width that is 10
0 timgs g
that is umesbe rclabeicd so
that the ctac
greatcr How sbould the vertical axis be relabeled to repre

5ent s chanede neW costant

eLang iand (Vos p o the
ot proportioality
s
with an overdtive votage of LSV, what valse of ip results?

source resistance,
W to anrange
corresponding ot drain-do
overdrive voltage4.9 Explain why the gphs in Fig. 4.tIb) do not changc as V,
es
) tanging froni 0.5 V to 2 V? s
changed. an you devise a more general (1.e, V,independenl)
epresentaion of the churacterisics presented in Fig. 4.12?
the relative width of a-channel
that and p-channel
devices if
4.10 For the transistor whose i p s
they are to have equal drain currents when operated in the
Chie
depicted in Fig. 4.12, sketch i, vcrsus the owcrdive voltage vowa

saturation mode with overdrive voltages of the same t s t o r th 2 What 1s the advantags of this graph over

nagnitude that Fig. 4.127 Sketch, on the same diagram, the graph lor a
in
e v e that is 2dentical exGepe Ior having halt the wutl.
4.4 An n-channel device has = 50 4A/V, V- 0.8 V.
An
and W/ =20. The device is to operate as a switch for small
4.1 NMOS ransistor having V,=1Vis operatod in the
vos n the 5 V,
ha Utlrzing a control vouge range to
n w s c reance and ciosureoage tha obtain rg=200 27 Find the coresponding resistance values
04 we o*mA. Recaling bained with a device having twice the value of W
* that
eowides the sane performance as the n-channcl device in
hisapplication?
4.12 A particular cnhancement MOSFET tor which ,
and W)01 if
mA is to he operated in tosthe saur

4.5 An device in a technology for which

m-channel MOS
Oxide thickness is 20 nun, minirmun1 gate length is 1 m,
tion region. ip is beRepeat
unimum required
to
0.2 mA.forfind the requirod and the
fo 0.8 mA.
K100 A/V, and V, 0.8 V operates tn the
region, with semall t'hs and wilh the ale-souree age
triooc 4.13 A particular n-channel enhancement MOSFET IS mea
sured to have a drain current of 4mA at Vas
range 0 V to+5 V, What device wjdth is necdeu to esure tna Va and o
ImA at VasVps3V. What are the values of R, (WL) and
the mitimum availabje resistance is 1 k??
for this device?
4.6 Consider a CMOS process for which Lmin An. a
D4.14 For particular
IS nm, A5S0 cm7V s, and V,m0.7 V.
a
IC-fabrication process,nea
V , I V . In
wt paratneterT ,
=

30 HAV, and an

a Find C
and k
with W/L= 16
T MS rahsusor um/0.8 um, culcu- What value a engtn o 4 um,
vuc ofO chanee
channel widih must the design use?
transistor in te esurion ei e
(c) For the device in (b). find the valuc of V and Vr 4.15 An NMOS transistor. operating in the hoear-resistunce
quired to cause the device to operate as a 1000a resistor und to condct UA Ors
or very small ps Z and 160 uA for ves4V.= 50What
threshold voltage V,? if ,
is the apparent value of
jpA/V", what is the device

4.7 Considet an n-channel MOSFET with , 20 am. 4, W/L ratio? What cutent would you expect to tiow with ts
650 cm'/V s, V,=0.8 V, and VL= 10. Fad the drain current 3V and vs=0.15 V? If the device is operatod at us-3 V, a
 PROBLEMS 361

what value of voy will the drain cnd of the MOSFFT channel 100 A is found lo ave un bulput resistance of 0.5 MA,

just reach pinch off, and what is the corresponding drain aboutof that nccded. whal dimensional change can be
current? made to solve the prmhlem? What is the new device length7

4,16 For an NMOS transistor, for which V, = 0.8 V, operat wunhe new W. ratio? What is V, for the

.5 V to 4 V, whal the largest

n u er ano new dev
e
agwos n ne range o
is

value of for which the chanpel remains continuoUS?

D4.22 Fora particular nchannel MOS techoology, in
associated
1 AnMON tranistor, fabricated with W= 100 um and nn annel length um, the
1s

s 0.02 V
valuc of panicular device T0r whichWhat
f
ihe ooeralcd at very low values uf the as alinear resis YWI
o c me arin Curret hecome 1
aan cuent o b0 A,
t e 15 raised to V 7 What
tor. For s varying from 1.1 V to 11 V, whut runge of resistor
values cun be obtalned7 Whut is the available range if
percentage change does this represent? What can be dane to
ncduce the percentage by a tactar ot
(a) the devICe widih s halved?
2
4.23 An NMOS trumiator is fabricated in a 0.8-um process
(b) the device length is halved?
(c) both the width and kength are haled? having 130 juAV and 20 V/um of channe
length. I1 L1.6 um and w l pm. find Va and A ind
4.18 When the drain and gate of a MOSFET are connecied the value of lp that resulta when the device is operated with
an overdrive voltage of 0.5 V and V o 2 Also, find
ogether, a two-teminal device kaown asR "diodecannocted is increascd by
aunsistar" results. Figure P4.18 shows such devices obtained the valuc ofis r,theatcoesponding
from MOS transistors of both polarities. Show that
this
operating change
point. Ifn Vos
lp
V, what
(a) the -vrelutionship is given by 4.24 Complete the missing entries in the following
which desribes churucteristics of suitably biased NMos
transistors

(h) the increnental resistunce r for a device biased to operale

MOS
Bt
Vov is given by

0.
(mA)

4.25 An NMOS transiator with A - 001 is operating at

a dc current l p I mA. If the channel length is doubled, find
tbe new values of 7, Va lo and r, for cach of the folowing
wo cascs

(a) Vos andV re

PIGURE P4.18
4.26 An enhancementandPMOS
80 uAY.V,-13 ,
transistor has&(WIL)=
a-0.02 V , The galc is con
nocted to ground and the sourcc to +5 V. Find the drain cumen
For a particular
4.19 MOSFET
tlon region at u comstard p
operating in the
s found to be 2 mA for vs
satura- for t + 4 V, +1.5 v,OV, and-5 v.

B n d 2.2 mA for 8V. Whul vnlues af r . Va. and à Ap-channel iransistor lor wthich|V Vand |V
4 V, und

Curfesond
OV operatesin saturation with
ft 3V.1V
ip3mA. Pind corresponding yncd vaiues 1arTot G-

4.20 Apaticular MOSPET bas V50. Froperalion at V , V A, and

k, (WA).
0I mA and I mA. what are the expected outpul reaislance? 4.28 In a technology for whih the gate-onide dhickness is
In each cuse, for a cbange in tps o Wnat pereenag
20 nm, find the value of N, for which 7 0.5V.f the doping
chongo in drain cumcnt would yu espet?
is incrcd
level is maintained but the gate oxide thickness io
D4.21is In2 Jum,
ength
a puricular IC kvign in
an NMOS device withwhichW/A
theofmandard channelat 100
5 operating 0 5nVwhat value hecone?
docs
t whal
7
must the 1 y hlo
doping hebekent
level constant a
changed?
 Chapter 4- Problems 44.3

ter q u a drain Curents

The
capaeitana Per unat a r a
is d
n3.4te
44
1 0 m S , o.s
For Capaciance , uwe requurn a arca A: For Small
Yos Ea s-) "ps
66
"*
r * For ton 20na 238 23FmV
bs *
osteranCA
er sait
the oF a
p-chaml
per
for a square plak capatafor of 1oP duvita
A 1 0 4 . 45op or F 3 synrt hr s 5
eW 25- a*2520*2s
So
A 1 6 J a u630 pn or 1odsol p sqvou h toy0

4.2
Drain w r r e i s dir y Myrtèrnl to t i fer Small os
width f t chanel. There Fire if widtk s to

gnaker as wel.
or psN
KenstawloF
Ceoo '

roo n'(-on
=W"
properthienaliy
ss L 46

2.3F/u
200 Ka 35oxio'2.3 io"126.5
b)oK s - - 0
ros os
foer ov
ys ia6.51
Gs- 0.2 >ov0.28
Ds5 y zt:5 ss-098V
oS0
r
e 2 bS os- 28V
 41
0.40.1.V

a) tride rego: bss-y

b 2 6 % 1ofi5-03)-4415mA

b) dg of salurulan gn oss-

c)triode
"* os os-t
a o 1ofi5.o )2-4oo12h
4) Satvaan gieni os t
4.10
oA
4.8
as s oss w.w
Refer to 6. 4tb, se ik wis halbtd,
MA wDB aGe be halyea. The e r h a l oKis,

D, has to be
civided by 21 For a devia alitk
Vs2 half the w:dth,"
i s danded by2.
O. (U)
.5622
This p h rot dependaut on V hile

2 3 AVsv) 4.
o ov.5 ,by look na comspe
cUYves V+1.S, wë observe thak:
q4.13 bs os-] theore:
bo.5625 mA

Newfor a devic wii tiu tw

dfa
ont
 Wao-V p 163125 A
oSV, th channel reach pinchoFfa
For o s . 5 . 2oros00S
osos-3o1s.2 is For which
fo Vos5" 6 2ea i0o
3mk

4.12 416
tsaAs
te min
hr Channc
.8 0.7
2v
un s- 3-
e emA: O.8 *.1Vos-
4.17
"Ddnin-%*5-1=4

L4.13 6stv os 10xa

VGs o s ditalko opnakon in

sala raben
mede: o (s- doekd=
os o i Ws haived osis
20e oso
So i i s kald "as i also

halvnd: 5o s bs

So i betk wand Lo halnd,

Ds
a d so does os
stays nchawaed
L4.1

4
2 W= 2s"Am
salrason
nCerdng o 7.7:Go
L15 Go Sere in
Fy.pa.1P, *hen
i
th saraOn
devi is aluays in J
mode regio ' [Ms4s-
is KeVv-J*
iFK502 : o 5o x(a.475)1 - ] when

1f s3,hsos th 5e0So5-25
 419
Far Lp VSox 3a1Sov
MA
' 75 KL

For Vos raised From t o 5 , p increases

rom opA to 82134.
Vost) a 2 I cha *p
20KA
Tn order te návca a byaacor oF 2

talulal onsider the ABc triat Bio has to be halved, or equivakuiy Ta

-2-Axo 220 4 o V - - 36V hao to dovbled. order to iaulale
be
Va a a t o be dousled
tn
a n d thaa tau loe dona
a
0.023
VA
y dbling the Leng L235
4:20
L423
VA A 20M 1.6 =32V Ao.031
os2 >Vos-)0.5V- dia in sakoral na
p- mA A2MA 2
30, 0.3162.54A
o-A Ap20uA As2 oA 197k
T63.5

421
424
here i ogletalg oreoCa s5
dagauudaak, Also, Y A . h e f o r e to atkte

desired rofuhich is 4 t e s
Intrease L. Lhx 2 8
langez uwe Sh o2 o.0 o.1 o005
200

333
In order vo eep unchanged , aio
(000
ws to
shaUndha d.There fere
w-4xlo-40 Sois KAptak 5)
A o D 0 . 3 H A 10o = 5 o V CFer shdMd)

VA 4o5H;ioo = 2ooV Uor nea davia)

425
4.22 A oo V A aL FLis dolbled, so is
o.0 26= 5oV ar Llis a) i Vos s
eds ten pishalvedas o
VAL Sov TSottoF dovding b* 0
ont.

S ,1 a.3

by iFis kxed: o-V 200 : 20k A23x1 tou

iF tos1oonm
4.26 2.5
ux is che
1E Y is Apt at o.SY ,than whe
Vs-5
operala. in saluralien: NAL Co
T

DSs-
or
bs-5.As) r Vos3.5 AL - AA9.2l
s-IV -3.5-,tnie dt mgion
 PROBLEMS
SECTION 5.1: DEVICE STRUCTURE
AND PHYSICAL OPERATION
S.5 Find the values of ß that cormespond
0.8,0.9,0.95, 099, 0.995, and O.999.
to a values of 0.5,

5.1 The leminal voliagcs of various npn transistors are 5.6 Find
the vialucs of a that correspond to B values of1.2,
in thieir respective circuils
with the
mcasured during operation
following results:
10, 20, 100, 200, 1000, and 2000.

5.7 Mcasurement of Va and two lerminal currcnts taken on

Case E B E Mode a umber ot pn uansistors are tabulated below. For each,

).7 catculate the mising cument value as well as a, ß, anud

ndicated by the table.
as

.
U,7
.0
Transistor a b d e
. 0.7

YomV) 600 690 S80 780 0

(mA) T.O00 T.000 10.10
030
1.070 0.137
In this lable, where thc entries are in volls, O indicales tho ref

erence teminal to
which the black (ncgative) probe of the
voltmeler is conncctcd. For each case, identiry the mode of
operation of the transistor.

A n npn transistor has an emitter area of 10 jumx 10 um.

onsiocr
V at
an picuent
transistor whosc base-cmitter drop is
of 10 mA. What curent will it
hc doping concentrations arc as tollows: in the emitter No
.76 collector
a

e m , in the base N, = 10"/cm', and in the collecior Np =0.70 V? What is its base-emitter voltuge for
T
nduct at
e= 10pA
he
n, 1.5 X 10
transistor is operating at 300 K. wherc
/cm. For electrons dittusing
n e DasC, La 5.9 Show that for a transistor with a close to unity, 1
9im and D, = 21.3 em''s. For holes diffusing in the emit
changes ty a small per-unit amount (Aa/a) the coespond-
a
ter, 0 6 Jum and D, 1.7 em'/s. Calculate I, and A ing per-unit change in Bis given approximately by
assurmg mat the Dase-width
W1
(a)1
(6)4
S.10 An npn transistor of a lype whose Pis specilied to
range
For case (b). if I¢= 1 nA, find from 60 to 300 is connected in a circuit with emitcr grounded,
Ip l Va and
the minority e c o at V, and a curent of 50 AA injected into the base.
in the L,/D,. Recall
urge stored
electron
basc.x (Hinr: t, -

Cakculate the range of collector und emitier currents that can

e charge q -1.6 10* Coulomb.) result. what 1s the maximum power dissiputed in the transistor?
onsistors, Iabricatcd with the same technology but the
t unction areas, when operated at a base-eniter
Nore: Perhaps you can see why this is bad way to establish
operating current in the collector of a BIT.)
a

voltage of 0.72 V, have collector currents of 0.2 mA and 12 mA.

ind
Tor each device. What are S.11 A particular BJT when conducting a collectur curent
the relative junction arcas?
of 10 mA is known to have t 0 . 7 0 V and fo 100 juA. Use
I n a particular BJT, the base current is 7.5 JuA, and the
these data to create
collector current is 400 uA. Find ß and a for this device. specific
shown in Figs. 5.5(@) and (6).
transistor models of he ton
 TRANSISTORS (BT)
S18 CHAPTER 5 BIPOLAR JUNCTION

emitler is connected to ground, tho buse is connected to a cur.

S.12 Using the np transistor model ot Fig. .NO), consider
the
the c a s e o t a t r a n s i s o r t o r w n i e nected to rent souroe ihat pulls 20 JA out
of buse terminal, ünd
ground, the coliector sted to a 10-V de source through
3mA curnent source is connected to the the collector connected to negative supply of -10V via
is a
10-k2 resistor, find the collector voltage. tne emiier current,
a

2-ks2reststoT, n ha eurent is drawn out of the and the base vOage

emter W nal, 1 8- 100 and ,= 105 A, find the voltages
einc
at the cmiter and the collector and calculate the base cuCnt. 5.17 Apnp transistor has ves0.8 V at a collector current of
1A. What do you expect th to become at fe 0 mA? At
5.13 Consider an npn transistor for which B, = 100, a =0,l, ic5 A7
and 7 10A modeled with the circuit in Fig. 5.12 is
is operated in the forward active mode pnss
a) I the transistor connected with its base at ground, collector at-.3, and a
with , 10 #A and V c w , Iind Vaa le and I into its Cmitter. If it is suid to have
transistor in the reverse active mode urent njectecd
0 Now, operate thc s e and coector curTents?
In which
Vac Cqual to the value of V
wn a i0rwaru-bias Voltage direction do they tlow? 1fls= 10 A, what at
voltage results
ound in (a) and with Vea V , Find o l, and l
the emitter? What does the collector current become ita tran
5.14 A ransistor characterizod by the Ebers-Moll model sistorwith f = is the
1000 substituted? (Note: The toct that
shown in Fig. 5.8 is operated with both emitter and collector collector current changcs by less than l0e tor a large change
grounded and a buse current of I mA. If the collector junction of f illustrates that this is a good wuy to establish a specific
s 10 times larger than the emitter junction and a, a l, fnd collector current)
ie and i
5.19 A pnp power transistor operales witb an emitter-to-
5.15 (a) Use the Ebers-Moll expressions in Eqs. (5.26) collcctor voltage of 5 V, an emitter current of 10 A, and Vsa=
und 5.27) to show that the te-ven Telationship sketched in
Fig. 5.9 can be described by
0.85 V. For ß -15, what base current is requircd? What is
I, tor this transistor? Conpare the einitter-base junction
arcu of this transistor with that of a small-signal transistor
that conducts i c 1 mA with 0.70 V, How much
larger is it?
(b) Calculate and skefch ic-ven curves for a transistor for
which 1, 10 A , a 1 , and g 0,1. Sketch graphs for
e0.1 mA. 0.5 mA. and 1 mA. For euch. give the values of 5ECTION 5.2: CURRENT-VOLTAGE
he Va, and vVeE for which (a) fe =0.5a,lg and (6) ic =0,. CHARACTERISTICS
5.16 Consider the pap
applied to a transistor having s
large-signal,
10
model of Fig 5.12
A and fm 40. If the
5.20 Por the Fig. P5,20,
circuits in assume that the transis
tors have very large p. Somne measuremenis have been made

+12 V
10.7 V
10 V

36k
10 k
Va 15 k
O +0.7 V 10 ka
15 k w V

2.7 V V4
-4V
0.7 V
OV
3 10 kn 32.4 k 3 10 kl

10.7 V - 10 V
- 10 V
10 V
(a) (6) (c) (d)
FIGURE PS.20
 PROBLE
519
to V

+7V

+4.3 V O 4.3 V +6.3 V

100k
200 kil 3 +2V +2.3V
20KD
230 0 g1 k
(a)
(D)
FIGURE PS.21

on these circuits, with the results indicated in the figure. Find DS.23 the circuit in
the values ot the other labelcd voltages and currents.
Redesign Exun1ple 5.1 to
provide Ve
3 V And I ¢ 5 mA.

5.21 Measurements on
the circuit of Fig
labcleu voages us indicated. tmd uhe vajue
P5.21 produce 5.24 For each of the circuits sbown in Fig. P5.24,
find the
orp 1 r each
emitter,
istor
ralnsso
basc. and collector voltages und cuents. Use f= 30.
but
assume|sel0.7 V indcpendent of current level.
D5.22
Examination
esisiors wth >
ot the tuble
of standatd vAlues
toletubee in Apperiax u teveals tnat e Tor5.25
0.7 V atRepcal
Problem 5.24 using irunsistoes for which Val
IeI mA.
clusesl values found in the design Ot
to thuse EXaDpie D.i are
5.1 k2 und 6.8 k2. For these values use approximate calcula .26 For the circust shown in Fig PS.26, Imeusurement
tions (e-g. V 0.7V und a 1) to determine the valucs ndicates that V - i V. ASSuming V0.7 V, Calculate
of collector current and collector voltage thut ure likely to , and Ve If a transistor with pm is used. what valucs
result. of VV, and Ve Tesult?

+9V

31 ka
22 k
V

22 k
560 9 3470
-3V -3V
(6 (C) (
FIGURE P5.24
 CHAPTER5 PROBLEMS 5:3
L5
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Case wieDe D:7L/0oiF
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saturahe a 2/4x10A
acfva
safura hon FoR Device #2
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eut-
cut-of T322Rx0A
Sina TA, T labit unkon
auns
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sing3. (5*)

1A 10 1D 6x1D21-3 x

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B 53 3

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Te Te +Ts rang43 re
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Max Powar a
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Da has
satura h on
Current e Marrg a Eas Moll medal kaw
6-11x10'A bres (5 28)

5-12
NB NEGATVE
0WARD ATV
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D61Y
T Is e
3 mA ImA NB I BT
a 10o

Tet Ta Oim
leTe e /
3x1 10 ep-ot5 Kane Achns dade purahen
-

Ve O-a.HE -O:7/8
 - U8E/b.02S b Kiarn Achs Made puradho

Ve O - a . H t - O : 7 1 8

santee s
(s-28) Pawa arti Mods

i Snu s H v

(
DDo101

1:0m Marg(526)

&(92) i e l ) -I ( )
) -e OA
- Sinu Vee = Vec

lng (5-2)
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CONT.