TLE4905L Siemens Elenota - PL

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Uni- and Bipolar Hall IC Switches for TLE 4905 L; TLE 4935 L;

Magnetic Field Applications TLE 4935-2 L; TLE 4945 L;


TLE 4945-2L

Bipolar IC

Features
• Temperature compensated magnetic performance
• Digital output signal
• For unipolar and alternating magnetic fields
• Large temperature range
• Protection against reversed polarity
• Output protection against electrical disturbances
P-SSO-3-2

Type Ordering Code Package


TLE 4905 L Q67006-A9120 P-SSO-3-2
TLE 4935 L Q67006-A9112 P-SSO-3-2
TLE 4935-2 L Q67006-A9143 P-SSO-3-2
TLE 4945 L Q67006-A9163 P-SSO-3-2
TLE 4945-2L on request P-SSO-3-2

TLE 4905/35/35-2/45 L (Unipolar/Bipolar Magnetic Field Switches) have been designed


specifically for automotive and industrial applications. Reverse polarity protection is
included on-chip as is output protection against negative voltage transients.
Typical applications are position/proximity indicators, brushless DC motor commutation,
rotational indexing etc.

Semiconductor Group 1 1997-09-01


TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L

Pin Configuration
(view on branded side of component)

Center of
sensitive area
2.08 ±0.15

1.35 ±0.15

1 2 3

VS GND Q
AEP01364

Figure 1

Pin Definitions and Functions

Pin No. Symbol Function


1 VS Supply voltage
2 GND Ground
3 Q Output

Semiconductor Group 2 1997-09-01


TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L

Circuit Description
The circuit includes Hall generator, amplifier and Schmitt-Trigger on one chip. The
internal reference provides the supply voltage for the components. A magnetic field
perpendicular to the chip surface induces a voltage at the hall probe. This voltage is
amplified and switches a Schmitt-trigger with open-collector output. A protection diode
against reverse power supply is integrated. The output is protected against electrical
disturbances.

Threshold
Generator

1 3
VS Q
Hall-
Generator

VS
VRef

Amplifier Schmitt-
Trigger
Output
2 Stage
GND AEB01243

Figure 2
Block Diagram

Semiconductor Group 3 1997-09-01


TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L

Functional Description Unipolar Type TLE 4905 (figure 3 and 4)


When a positive magnetic field is applied in the indicated direction (figure 3) and the
turn-on magnetic induction BOP is exceeded, the output of the Hall-effect IC will conduct
(Operate Point). When the current is reduced, the output of the IC turns off (Release
Point; figure 4).

Branded Side
Ι

VQ
N

+ -
VS AES01231

Figure 3
Sensor/Magnetic-Field Configuration

BOP

BRP Induction

0
t
VQ

VQH

Output Voltage

VQL

t
AED01420

Figure 4
Switching Characteristics Unipolar Type

Semiconductor Group 4 1997-09-01


TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L

Functional Description Bipolar Type TLE 4935/35-2/45 (figure 5 and 6)


When a positive magnetic field is applied in the indicated direction (figure 5) and the
turn-on magnetic induction BOP is exceeded, the output of the Hall-effect IC will conduct
(Operate Point). When a reverse magnetic field is generated, the output of the IC turns
off (Release Point; figure 6).

Branded Side
Ι

VQ
N

+ -
VS AES01231

Figure 5
Sensor/Magnetic-Field Configuration

BOP
0 Induction
t
BRP

VQ

VQH

Output Voltage

VQL

t
AED01421

Figure 6
Switching Characteristics Bipolar Type

Semiconductor Group 5 1997-09-01


TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L

Absolute Maximum Ratings


Tj = – 40 to 150 ˚C
Parameter Symbol Limit Values Unit Remarks
min. max.
Supply voltage VS – 40 32 V –
Supply voltage VS – 40 V t < 400 ms; ν = 0.1
Output voltage VQ – 32 V –
Output current IQ – 100 mA –
Output reverse current – IQ – 100 mA –
Junction temperature Tj – 40 150 ˚C –
Junction temperature Tj – 170 ˚C 1000 h
Junction temperature Tj – 210 ˚C 40 h
Storage temperature Tstg – 50 150 ˚C –
Thermal resistance Rth JA – 190 K/W –

Note: Stresses above those listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.

Operating Range
Parameter Symbol Limit Values Unit Remarks
min. max.
Supply voltage VS 3.8 24 V –
Junction temperature Tj – 40 150 ˚C –
Junction temperature Tj – 40 170 ˚C thresholds may
exceed the limits

Note: In the operating range the functions given in the circuit description are fulfilled.

Semiconductor Group 6 1997-09-01


TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L

AC/DC Characteristics
3.8 V ≤ VS ≤ 24 V; – 40 ˚C ≤ Tj ≤ 150 ˚C
Parameter Symbol Limit Values Unit Test Condition Test
min. typ. max. Circuit

Supply current ISHigh – 3 7 mA B < BRP 1


ISLow – 4 8 mA B > BOP 1
Output saturation VQSat – 0.25 0.5 V IQ = 40 mA 1
voltage
Output leakage IQL – – 10 µA VQ = 24 V 1
current
Rise/fall time tr / tf – – 1 µs RL = 1.2 kΩ 1
CL ≤ 33 pF

Note: The listed characteristics are ensured over the operating range of the integrated
circuit. Typical characteristics specify mean values expected over the production
spread. If not otherwise specified, typical characteristics apply at Tj = 25 °C and
the given supply voltage.

Semiconductor Group 7 1997-09-01


TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L

Magnetic Characteristics
3.8 V ≤ VS ≤ 24 V
Parameter Symbol Limit Values Unit
TLE 4905 TLE 4935 TLE 4935-2 TLE 4945 TLE 4945-2
unipolar bipolar bipolar bipolar bipolar
latch latch latch latch
min. max. min. max. min. max. min. max. min. max.

Junction Temperature Tj = – 40 ˚C

Turn-ON
induction BOP 7.5 19 10 20 15 27 –6 10 –3 6 mT
Turn-OFF
induction BRP 5.5 17 – 20 – 10 – 27 – 15 – 10 6 –6 3 mT
Hysteresis
(BOP-BRP) ∆BHY 2 6.5 20 40 30 54 2 10 1 5 mT

Junction Temperature Tj = 25 ˚C

Turn-ON
induction BOP 7 18 10 18 14 26 –6 10 –3 6 mT
Turn-OFF
induction BRP 5 16 –18 –10 – 26 – 14 – 10 6 –6 3 mT
Hysteresis
(BOP-BRP) ∆BHY 2 6 20 36 28 52 2 10 1 5 mT

Junction Temperature Tj = 85 ˚C

Turn-ON
induction BOP 6.5 17.5 9 18 13 26 –6 10 –3 6 mT
Turn-OFF
induction BRP 4.5 15 – 18 –9 – 26 – 13 – 10 6 –6 3 mT
Hysteresis
(BOP-BRP) ∆BHY 2 5.5 18 36 26 52 2 10 1 5 mT

Semiconductor Group 8 1997-09-01


TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L

Magnetic Characteristics (cont’d)


3.8 V ≤ VS ≤ 24 V
Parameter Symbol Limit Values Unit
TLE 4905 TLE 4935 TLE 4935-2 TLE 4945 TLE 4945-2
unipolar bipolar bipolar bipolar bipolar
latch latch latch latch
min. max. min. max. min. max. min. max. min. max.

Junction Temperature Tj = 150 ˚C

Turn-ON
induction BOP 6 17 7 18 12 25 –6 10 –3 6 mT
Turn-OFF
induction BRP 4 14 – 18 –7 – 25 – 12 – 10 6 –6 3 mT
Hysteresis
(BOP-BRP) ∆BHY 2 5 14 36 24 50 2 10 1 5 mT

Note: The listed characteristics are ensured over the operating range of the integrated
circuit. Typical characteristics specify mean values expected over the production
spread. If not otherwise specified, typical characteristics apply at Tj = 25 °C and
the given supply voltage.

Semiconductor Group 9 1997-09-01


TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L

ΙS 1
VS VS
+
4.7 nF
- 2 TLE
RL GND
4905/35/35-2/45-2
CL
3
Q
ΙQ
AES01244

Unipolar Type TLE 4905 Bipolar Type TLE 4935


VQ VQ

VQH VQH

VQL VQL

0 B RP B OP B B RP 0 B OP B
B HY B HY AED01422

VQ

VQH

0.9 VQH

0.1VQH

t
tr tf AED01246

Figure 7
Test Circuit 1

Semiconductor Group 10 1997-09-01


TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L

Mainframe Line Sensor

1
VS VS

4.7 nF
2 TLE
1.2 k Ω GND
4905/35/35-2/45-2
4.7 nF
3
Signal Q

AES01247

Figure 8
Application Circuit

Semiconductor Group 11 1997-09-01


TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L

Quiescent Current versus Quiescent Current versus


Supply Voltage Junction Temperature
AED01248 AED01249
8 8
ΙS ΙS
mA VQ = High mA
VQ = High
6 6

4 T j = -40 ˚C 4
VS = 24 V

T j = 150 ˚C
VS = 3.8 V
2 2

0 0
0 5 10 15 V 25 -50 0 50 100 C 200
VS Tj

Quiescent Current Difference Saturation Voltage versus


versus Temperature Output Current

AED01459 AED01461
1.0 1.2
∆Ι S VQ V
mA
∆ Ι S = Ι SLow - Ι SHigh 1.0 3.8 V <_ VS <_ 24 V

0.75 Ι Q = 40 mA
0.8

0.5 0.6 T j = 150 ˚C

0.4
0.25
0.2 T j = -40 ˚C

0 0
-40 0 50 100 150 ˚C 200 0 20 40 60 mA 100
Tj ΙQ

Semiconductor Group 12 1997-09-01


TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L

TLE 4905 Operate-and Release-Point TLE 4905 Hysteresis versus Junction


versus Junction Temperature Temperature
AED01424 AED01426
25 8
3.8 V <_ VS <_ 24 V B 3.8 V <_ VS <_ 24 V
B mT mT
20
6
B OPmax
B HYmax
15
B RPmax
4
B OPtyp
10 B HYtyp
B RPtyp

B OPmin 2
B HYmin
5
B RPmin

0 0
-40 0 50 100 ˚C 200 -40 0 50 100 ˚C 200
Tj Tj

TLE 4935 Operate-and Release-Point TLE 4935-2 Operate-and Release-Point


versus Junction Temperature versus Junction Temperature
AED01423 AED01640
30 30
B 3.8 V <_ VS <_ 24 V
3.8 V <_ VS <_ 24 V mT B OPmax
mT B
20
20 B OPtyp
B OPmax
B OPmin
10
B OPtyp
10
B OPmin
0

0
-10
B RPmax
B RPmax
-10 B RPtyp
B RPtyp -20
B RPmin
B RPmin
-20 -30
-40 0 50 100 ˚C 200 -40 0 50 100 ˚C 200
Tj Tj

Semiconductor Group 13 1997-09-01


TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L

TLE 4945 Operate-and Release-Point TLE 4945-2 Operate-and Release-Point


versus Junction Temperature versus Junction Temperature
AED01425 AED02353
30 18
mT 3.8 V <_ VS <_ 24 V mT 3.8 V <_ VS <_ 24 V
B B
20 12

B OPmax B OPmax
10 6
B RPmax B RPmax
B OPtyp B OPtyp
0 0
B RPtyp B RPtyp
B OPmin B OPmin
-10 -6
B RPmin B RPmin

-20 -12

-30 -18
-40 0 50 100 ˚C 200 -40 0 50 100 ˚C 200
Tj Tj

Semiconductor Group 14 1997-09-01


TLE 4905 L; TLE 4935 L;
TLE 4935-2 L; TLE 4945 L; TLE 4945-2L

Package Outline

P-SSO-3-2
(Plastic Single Small Outline Package)

GPO05358

Exterior Packaging
I.e. tubes, trays, boxes are shown in our Data Book “Package Information”. Dimensions in mm

Semiconductor Group 15 1997-09-01

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