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Silicon NPN Power Transistors: Inchange Semiconductor Product Specification

The 2SD2539 is a silicon NPN power transistor in a TO-3P(H)IS package. It is suitable for use as a horizontal deflection output for color TVs. It has a high voltage and current rating of 600V and 7A respectively, with low saturation voltages of 5V or less. Additional features include a built-in damper diode and switching times of 6-9 microseconds for storage time and 0.3-0.6 microseconds for fall time.

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94 views4 pages

Silicon NPN Power Transistors: Inchange Semiconductor Product Specification

The 2SD2539 is a silicon NPN power transistor in a TO-3P(H)IS package. It is suitable for use as a horizontal deflection output for color TVs. It has a high voltage and current rating of 600V and 7A respectively, with low saturation voltages of 5V or less. Additional features include a built-in damper diode and switching times of 6-9 microseconds for storage time and 0.3-0.6 microseconds for fall time.

Uploaded by

Nazo Fs
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD2539

DESCRIPTION
·With TO-3P(H)IS package
·High voltage ;high speed
·Low saturation voltage
·Bult-in damper diode

APPLICATIONS
·Horizontal deflection output for color TV

PINNING

PIN DESCRIPTION

1 Base

2 Collector
Fig.1 simplified outline (TO-3P(H)IS) and symbol
3 Emitter

Absolute maximum ratings(Ta=25℃)


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 1500 V

VCEO Collector-emitter voltage Open base 600 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 7 A

ICM Collector current-peak 14 A

IB Base current 3.5 A

PC Total power dissipation TC=25℃ 50 W

Tj Junction temperature 150 ℃

Tstg Storage temperature -55~150 ℃


Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD2539

CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)EBO Emitter-base breakdown voltage IC=400mA ;IB=0 5 V

VCEsat Collector-emitter saturation voltage IC=5A; IB=1.0A 5 V

VBEsat Base-emitter saturation voltage IC=5A; IB=1.0A 1.0 1.3 V

ICBO Collector cut-off current VCB=1500V; IE=0 1 mA

IEBO Emitter cut-off current VEB=5V; IC=0 66 200 mA

hFE-1 DC current gain IC=1A ; VCE=5V 8 28

hFE-2 DC current gain IC=5A ; VCE=5V 5 9

VF Diode forward voltage IF=5A 1.6 2.0 V

Cob Collector output capacitance IE=0 ; VCB=10V,f=1MHz 115 pF

fT Transition frequency IC=0.1A ; VCE=10V 2 MHz

Switching times :

ts Storage time 6 9 μs
ICP=5A;IB1=1.0A
fH =15.75kHz
tf Fall time 0.3 0.6 μs

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Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD2539

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)

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Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD2539

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