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Semiconductors

This document contains 8 solved problems related to semiconductor physics: 1. Calculating conductivity given intrinsic carrier density and mobilities. 2. Calculating resistivity given intrinsic carrier density and mobilities in germanium. 3. Determining semiconductor type and calculating carrier properties using Hall coefficient and conductivity. The document provides the questions, given values, and asks the reader to calculate requested properties related to conductivity, resistivity, carrier concentration and mobility in various semiconductor materials and conditions.

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175 views5 pages

Semiconductors

This document contains 8 solved problems related to semiconductor physics: 1. Calculating conductivity given intrinsic carrier density and mobilities. 2. Calculating resistivity given intrinsic carrier density and mobilities in germanium. 3. Determining semiconductor type and calculating carrier properties using Hall coefficient and conductivity. The document provides the questions, given values, and asks the reader to calculate requested properties related to conductivity, resistivity, carrier concentration and mobility in various semiconductor materials and conditions.

Uploaded by

deep34
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SOLVED PROBLEMS

1. The intrinsic carrier density is 1.5 × 1016 m–3. If the mobility of electron and hole are 0.13
and 0.05 m2 V–1 s–1, calculate the conductivity.

2. The Intrinsic carrier density at room temperature in Ge is 2.37 × 1019 m3 if the electron and
hole mobilities are 0.38 and 0.18 m2 V–1 s–1 respectively, calculate the resistivity.

3. The Hall coefficient of certain silicon specimen was found to be –7.35 × 10–5 m3 C–1 from
100 to 400 K. Determine the nature of the semiconductor. If the conductivity was found to be
200 –1 m–1. Calculate the density and mobility of the charge carrier.
Solution:

4. In a P-type germanium, ni = 2.1 × 1019 m–3density of boran 4.5 × 1023 atoms /m3. The
electron and hole mobility are 0.4 and 0.2 m2 v–1 s–1 respectively. What is its conductivity
before and after addition of boron atoms.
5. In an N-type semiconductor, the concentration of electron is 2 × 1022 m–3 . Its electrical
conductivity is 112 –1 m–1. Calculate the mobility of electrons.

6. A semiconducting crystal with 12 mm long, 5 mm wide and 1 mm thick has a magnetic


density of 0.5 Wbm–2 applied from front to back perpendicular to largest faces. When a
current of 20 mA flows length wise through the specimen, the voltage measured across
its width is found to be 37μV . What is the Hall coefficient of this semiconductor?
7. Find the resistance of an intrinsic Ge rod 1 mm long, 1 mm wide and 1 mm thick at 300
K. the intrinsic carrier density 2.5 ×1019 m–3 is at 300 K and the mobility of electron and
hole are 0.39 and 0.19 m2 v–1 s–1.
8. The electron mobility and hole mobility in Si are 0.135 m2 V–1 s–1 and 0.048 m2 V–1 s–
1
respectively at room temperature. If the carrier concentration is 1.5 × 1016 m–3. Calculate the
resistivity of Si at room temperature.

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