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    AngJB CPE0223-1 MyThirdAssignment (CPE0223)

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    Jv Ang
    The document discusses bipolar junction transistors and unipolar transistors. It states that bipolar junction transistors use both electrons and holes as charge carriers, while unipolar transistors like field-effect transistors use only one type of charge carrier. The document then provides details about the basic construction and operation of NPN and PNP bipolar junction transistors.

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    AngJB CPE0223-1 MyThirdAssignment (CPE0223)

    Uploaded by

    Jv Ang
    26 views6 pages
    The document discusses bipolar junction transistors and unipolar transistors. It states that bipolar junction transistors use both electrons and holes as charge carriers, while unipolar transistors like field-effect transistors use only one type of charge carrier. The document then provides details about the basic construction and operation of NPN and PNP bipolar junction transistors.

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    The document discusses bipolar junction transistors and unipolar transistors. It states that bipolar junction transistors use both electrons and holes as charge carriers, while unipolar transistors like field-effect transistors use only one type of charge carrier. The document then provides details about the basic construction and operation of NPN and PNP bipolar junction transistors.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    26 views6 pages

    AngJB CPE0223-1 MyThirdAssignment (CPE0223)

    Uploaded by

    Jv Ang
    The document discusses bipolar junction transistors and unipolar transistors. It states that bipolar junction transistors use both electrons and holes as charge carriers, while unipolar transistors like field-effect transistors use only one type of charge carrier. The document then provides details about the basic construction and operation of NPN and PNP bipolar junction transistors.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 6

    ABSTRACT

    The charge carriers in a bipolar junction transistor are


    electrons and electron holes. A unipolar transistor,
    such as a field-effect transistor, on the other hand,
    uses only one type of charge carrier.

    Student Name: JV B. Ang


    Assignment No. 3 Student Number: 2019-20391

    BIPOLAR JUNCTION Eufemia A. Garcia


    Professor

    TRANSISTORS
    CPE 0223-3 Fundamentals of Electronic Circuits
    Assignment No. 3 Bipolar Junction Transistors

    1. What are the types of BJT transistors? Show the basic construction of each and label the
    minority and majority carriers in each.

    PNP and NPN transistors. A bipolar transistor (bipolar junction transistor: BJT) consists of
    three semiconductor regions forming two junctions. There are two types of structure: npn and
    pnp. Products with npn up to 800 V and pnp up to -600 V are available. In addition, there are also
    bias resistor built-in transistors (BRTs).
    The figure shows the basic construction of the PNP and NPN transistors with the
    majority and minority carriers followed by their graphic symbols.

    2. Differentiate bipolar and unipolar device.

    Bipolar Transistors are called "bipolar" because they use both holes and electrons as
    charge carriers. The Field Effect Transistor, on the other hand, is a “Unipolar” unit that relies
    solely on electron (N-channel) or hole (P-channel) conduction (P-channel).

    BJT is a three-terminal device with emitter, center, and collector terminals; FET is a three-
    terminal device with source, drain, and gate terminals. A Bipolar Junction transistor (BJT) is a
    three-layer stacked arrangement. Collector is at the bottom, Base is in the center, and Emitter is
    at the apex. Current must pass through the Base layer in order for current to flow from the Emitter
    to the Collector.

    3. How must the two transistor junctions be biased for proper transistor amplifier operation?

    The two transistor junctions must be forward and reverse biased for proper transistor
    amplifier operation. For proper transistor amplifier operation when following must be true:

    • The base-emitter junction (BEJ) must be forward-biased (p-region voltage more


    positive), with a resulting forward-bias voltage of about 0.6 V to 0.7 V.
    • The base-collector (BCJ) junction must be reverse-biased (n-region more
    positive), with the reverse-bias voltage being any value within the maximum
    limits of the device.
    4. What is the source of the leakage current in a transistor?

    The minority-current component which is called the leakage current (ICO) is the source
    leakage current in the transistor. The transistor leakages are caused by a lack of insulation
    between the channel, source, and drain. There are many ways to mitigate leakages, the most
    common of which is to install diodes or capacitors in these areas. In principle, there should be no
    leakage on a perfect transistor, meaning no current should flow while the gate is not working.
    When the gate is asserted, the only power consumed is active/switching power.

    However, the leakage problem worsened to the point that the planar transistor could no
    longer work. As a result, new transistor designs, such as the present finfet transistor or the gate
    all around FET, have been developed to increase the surface area of the gate.

    5. Sketch the transistor symbol for a pnp and a npn transistor for:
    a. Common-Base Configuration

    b. Common-Emitter Configuration
    c. Common-Collector Configuration

    6. Differentiate the operation in the cut-off region, saturation region and linear regions of the BJT
    characteristics.
    The first area or region is known as "cutoff." The transistor is basically inactive in this
    situation. The transistor is in the cutoff area as we look at the terminals of a BJT and see that the
    emitter-base junction is not at least 0.6-0.7 volts. When the transistor is cutoff, the collector and
    emitter terminals tend to be open circuits. This means that Vout is 10 volts in the circuit above.
    The second zone is known as "saturation." The base current has risen to the point that
    the emitter-base junction is no longer forward biased. In particular, the base current has risen to
    the point that it can induce an increase in collector current flow. The transistor appears as a near-
    short circuit between the collector and emitter terminals when it is saturated. This means that
    Vout is almost 0 volts in the circuit above, but it is only 0.2 volts.
    The transistor can be used as a transition by combining the two states of cutoff and
    saturation. The switch terminals are formed by the collector and emitter, and the switch handle
    is formed by the center. To put it another way, the tiny base current will be used to regulate a
    much greater current flowing between the collector and the emitter.
    The active area of the BJT, also known as the linear region, is located between cutoff
    and saturation along the load axis. The base-emitter junction must be forward-biased while the
    base-collector junction must be reverse-biased for the BJT to run in the active field.

    7. What are the different transistor dc bias configuration? Illustrate each.


    • Voltage Divider- R1 and R2 form a voltage divider, thus the term voltage divider. The base-
    emitter junction is forward biased by the voltage decline through R2. In zero signal conditions,
    this allows the base current and hence the collector current to flow.
    • Collector to Base Bias- This is a voltage feedback dc bias. Collector to base bias circuit is
    another name for it. It is a step forward from the fixed bias form. A biasing resistor is attached
    between the transistor's collector and base to provide a feedback direction.
    • Emitter-Resistance Bias- The bias voltage of the amplifier can be stabilized by using a single
    resistor in the emitter circuit of the transistor, as shown. The Emitter Resistance, or RE, is the
    name given to this resistance. If the supply voltage and collector current attempt to decrease
    in value, a related behavior happens.

    • Fixed Base Biasing- The circuit is referred to as a "fixed base bias circuit" since the transistor's
    base current, IB, remains constant for specified Vcc values, implying that the transistor's
    operating point must therefore remain constant. Using a fixed current bias, this two-resistor
    biasing network is used to create the transistor's initial operating area.

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