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Nte 382

This document provides specifications for the NTE382 and NTE383 silicon complementary transistors which are intended for use as audio frequency drivers. It lists the absolute maximum ratings and typical electrical characteristics for parameters like collector-base voltage, collector current, current gain, and capacitance. The transistors can handle collector currents up to 1A continuous and 2A peak, and have a current gain of 160-320 at typical operating conditions making them suitable for audio applications.

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Abel Rodriguez
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71 views2 pages

Nte 382

This document provides specifications for the NTE382 and NTE383 silicon complementary transistors which are intended for use as audio frequency drivers. It lists the absolute maximum ratings and typical electrical characteristics for parameters like collector-base voltage, collector current, current gain, and capacitance. The transistors can handle collector currents up to 1A continuous and 2A peak, and have a current gain of 160-320 at typical operating conditions making them suitable for audio applications.

Uploaded by

Abel Rodriguez
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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NTE382 (NPN) & NTE383 (PNP)

Silicon Complementary Transistors


Audio Frequency Driver
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)


Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 120 – – V
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞ 100 – – V
Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 5 – – V
Collector Cutoff Current ICBO VCB = 100V, IE = 0 – – 10 µA
DC Current Gain hFE VCE = 5V, IC = 150mA 160 – 320
VCE = 5V, IC = 500mA 30 – –
Collector–Emitter Saturation Voltage VCE(sat) IC = 500mA, IB = 50mA – – 1.0 V
Base–Emitter Voltage VBE VCE = 5V, IC = 150mA – – 1.5 V
Current Gain–Bandwidth Product fT VCE = 5V, IC = 150mA – 140 – MHz
Capacitance Cob VCB = 10V, IE = 0, f = 1MHz – 20 – pF
.343
(8.73)
Max

.492
(12.5)
Min .024 (0.62) Max

EC B

.102 (2.6) Max


.059 (1.5) Typ

.102 (2.6) Max


.197
(5.0)

.018 (0.48)

.118 (3.0) Max .102 (2.6) Max

.236 (6.0)Dia Max .102 (2.6) Max

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