AO3413

P-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AO3413/L uses advanced trench technology to VDS (V) = -20V

provide excellent RDS(ON), low gate charge and ID = -3 A (VGS = -4.5V)
operation with gate voltages as low as 1.8V. This RDS(ON) < 97mΩ (VGS = -4.5V)
device is suitable for use as a load switch or in PWM RDS(ON) < 130mΩ (VGS = -2.5V)
applications.
RDS(ON) < 190mΩ (VGS = -1.8V)
AO3413 and AO3413L are electrically identical.
ESD Rating: 250V HBM
-RoHS Compliant
-AO3413L is Halogen Free

TO-236 D
D
(SOT-23)

G
S S
G

Absolute Maximum Ratings T A=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS ±8 V
Continuous Drain TA=25°C -3
Current A TA=70°C ID -2.4 A
Pulsed Drain Current B IDM -15
TA=25°C 1.4
PD W
Power Dissipation A TA=70°C 0.9
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 70 90 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 100 125 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 63 80 °C/W

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO3413

Electrical Characteristics (T J=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -20 V
VDS=-16V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS=±8V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.3 -0.55 -1 V
ID(ON) On state drain current VGS=-4.5V, VDS=-5V -15 A
VGS=-4.5V, ID=-3A 81 97
mΩ
TJ=125°C 111 135
RDS(ON) Static Drain-Source On-Resistance
VGS=-2.5V, ID=-2.6A 108 130 mΩ
VGS=-1.8V, ID=-1A 146 190 mΩ
gFS Forward Transconductance VDS=-5V, ID=-3A 4 7 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.78 -1 V
IS Maximum Body-Diode Continuous Current -2 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 540 pF
Coss Output Capacitance VGS=0V, VDS=-10V, f=1MHz 72 pF
Crss Reverse Transfer Capacitance 49 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 12 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 6.1 nC
Qgs Gate Source Charge VGS=-4.5V, VDS=-10V, ID=-3A 0.6 nC
Qgd Gate Drain Charge 1.6 nC
tD(on) Turn-On DelayTime 10 ns
tr Turn-On Rise Time VGS=-4.5V, VDS=-10V, RL=3.3Ω, 12 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 44 ns
tf Turn-Off Fall Time 22 ns
trr Body Diode Reverse Recovery Time IF=-3A, dI/dt=100A/µs 21 ns
Qrr Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/µs 7.5 nC

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The SOA curve provides a single pulse rating.
Rev 8: Aug 2008

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO3413

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

15 6
-4.5V
VDS=-5V
-3.0V -2.5V
-8V
10 4

-2.0V
-ID (A)

-ID(A)
5 2 125°C
VGS=-1.5V

25°C

0 0
0 1 2 3 4 5 0 0.5 1 1.5 2
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

200 1.8

VGS=-2.5V
VGS=-1.8V
Normalized On-Resistance

1.6
150
RDS(ON) (mΩ )

VGS=-1.8V
1.4
VGS=-2.5V VGS=-4.5V

100 1.2
VGS=-4.5V

50
0 2 4 6 0.8
-ID (A) 0 25 50 75 100 125 150 175
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage Figure 4: On-Resistance vs. Junction Temperature

200 1E+01

1E+00
ID=-4A
1E-01 125°C
150
RDS(ON) (mΩ )

1E-02 25°C
-IS (A)

125°C
1E-03
100 25°C
1E-04

1E-05

50
1E-06
0 2 4 6 8
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO3413

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5 800

VDS=-10V
4 ID=-3A Ciss
600

Capacitance (pF)
-VGS (Volts)

3
400
2

200 Crss
1
Coss

0 0
0 2 4 6 8 0 5 10 15 20
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0
20
TJ(Max)=150°C TJ(Max)=150°C
TA=25°C 100µs TA=25°C
10µs 15
10.0
-ID (Amps)

Power (W)

RDS(ON)
limited 1ms
10
0.1s 10ms
1.0
1s 5
10s
DC
0
0.1
0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100
-VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Ambient (Note E)
Operating Area (Note E)

10
In descending order
D=T on/T
Zθ JA Normalized Transient

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

TJ,PK=T A+PDM.ZθJA.RθJA
Thermal Resistance

RθJA=90°C/W
1

PD
0.1
Ton
Single Pulse T

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO3413

Gate Charge Test Circuit & Waveform

Vgs
Qg
- -10V
VDC
-
+ Vds Qgs Qgd
VDC
+
DUT
Vgs

Ig

Charge

Resistive Switching Test Circuit & W aveform s

RL
Vds t on t off

td(on) tr t d(off) tf
Vgs
-
Vgs D UT VDC
Vdd 90%
Rg
+

Vgs 10%
Vds

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds

Alpha & Omega Semiconductor, Ltd. www.aosmd.com