Principles of Electronic Engineering : DR - Eng. Eslam Samy EL-Mokadem

HIGHER TECHNNOLOGICAL INSTITUTE
TENTH OF RAMADAN CITY

ELECTRONICS AND COMMUNICATION
ENGINEERING DEPARTMENT
Principles of electronic Engineering

(EEC 102)
Prepared by :
Dr.Eng. Eslam Samy EL-Mokadem
Principles of electronic Engineering
(EEC 102)
Lecture (3)
Diode Theory
The Schematic Symbol for Diode
❑ Diode is made from a small piece of semiconductor material,

usually silicon, in which half is doped as a p region and half is
doped as an n region with a pn junction and depletion region in
between.
❑ The p region is called the anode and is connected to a conductive
terminal.
❑ The n region is called the cathode and is connected to a

second conductive terminal.
Diode Symbol
3/37
Forward Bias
❑ Forward bias is the condition that
allows current through the pn
junction.
❑ Notice that the negative side of

𝑽𝑩𝑰𝑨𝑺 is connected to the n region
of the diode and the positive side
is connected to the p region.
❑ 𝑽𝑩𝑰𝑨𝑺 , must be greater than the

barrier potential
4/37
V-I Characteristic for Forward Bias
• The diode forward voltage (𝐕𝐅 ) increases to

the right along the horizontal axis, and the forward
current (𝐈𝐅 ) increases upward along the vertical
axis.
• Point A corresponds to a zero-bias condition.
• Point B where the forward voltage is less than the
barrier potential of 0.7 V.
• Point C where the forward voltage approximately
equals the barrier potential.
• As the external bias voltage and forward current
continue to increase above the knee, the forward
voltage will increase slightly above 0.7 V.
• Knee Voltage In the forward region is the voltage at which the current
starts to increase rapidly. The knee voltage equals the barrier potential.
5/37
We define the knee voltage of a silicon diode as:
Reverse Bias
❑ Reverse bias is the condition that
essentially prevents current through
the diode
❑ Notice that the positive side of 𝑽𝑩𝑰𝑨𝑺

is connected to the n region of the
diode and the negative side is
connected to the p region.
❑ Note that the depletion region is

shown much wider than in forward
bias.
6/37
V-I Characteristic for Reverse Bias
• When a reverse-bias voltage is applied across a
diode, there is only an extremely small reverse
current (𝑰𝑹 ) through the pn junction
• At 0 V across the diode, no reverse current.
• As you gradually increase 𝐕𝑹 , there is a very small

reverse current and the voltage across the diode
increases.
• When the applied bias voltage is increased to a

value where (𝐕𝑹 ) reaches the breakdown value
(𝐕𝑩𝑹 ), the IR begins to increase rapidly.
• As you continue to increase the 𝐕𝑹 , the current

continues to increase very rapidly, but the voltage
across the diode increases very little above 𝐕𝑩𝑹 . 7/37
The Complete V-I Characteristic Curve
8/37
Diode Models
The Ideal The Practical The Complete

Diode Models Diode Model Diode Model
1- The Ideal Diode Model
❑ The ideal model of a diode is the least accurate approximation

and can be represented by a simple switch.
❑ When the diode is forward-biased, it ideally acts like a closed

(on) switch
❑ When the diode is reverse-biased, it ideally acts like an open

(off) switch.
Forward bias Reverse bias 10/37

1- The Ideal Diode Model
The diode is assumed to have a zero voltage
across it when forward-biased, as indicated
by the portion of the curve on the positive
vertical axis.
VF = 0 V
The forward current is determined by the
bias voltage and the limiting resistor using
Ohm’s law
The reverse current is neglected

IR = 0 A
The reverse voltage equals the bias voltage.
VR = VBIAS
11/37
2- The Practical Diode Model
❑ The practical model includes the barrier potential.
❑ When the diode is forward-biased, it is equivalent to a closed switch in

series with a small equivalent voltage source (VF) equal to the barrier
potential (0.7 V) with the positive side toward the anode.
❑ When the diode is reverse-biased, it is equivalent to an open switch

just as in the ideal model.
Forward bias Reverse bias 12/37

2- The Practical Diode Model
❑ Since the barrier potential is included, the
diode is assumed to have a voltage across it
when forward-biased, as indicated by the
portion of the curve to the right of the
origin. VF = 0.7V
❑ The forward current is determined as
follows by first applying Kirchhoff’s
voltage law
𝐼𝐹 𝑅𝐿𝐼𝑀𝐼𝑇 + 𝑉𝐹 − 𝑉𝐵𝐼𝐴𝑆 = 0
❑ The diode is assumed to have ze reverse

current, as indicated by the portion of the
curve on the negative horizontal axis.
13/37
3- The Complete Diode Model
❑ When the diode is forward-biased, it acts as a closed switch in
series with the equivalent barrier potential voltage (VB) and the
small forward dynamic resistance (r’d).
❑ When the diode is reverse-biased, it acts as an open switch in

parallel with the large internal reverse resistance (r’R).
❑ The barrier potential does not affect reverse bias, so it is not a

factor.
Forward bias 14/37

The Complete Diode Model
The curve slopes because the voltage

drop due to dynamic resistance increases
as the current increases.
By applying K.V.L to obtain 𝑰𝑭
𝑰𝑭 𝑹𝑳𝑰𝑴𝑰𝑻 +𝑽𝑩 + 𝑰𝑭 𝒓/𝒅- 𝑽𝑩𝑰𝑨𝑺 = 0
The characteristic curve for the

complete diode model
15/37
Diode equivalent circuit in Forward
and Reverse Biasing
Forward
Biasing
Reverse
Biasing
16/37
Example 1
(a) Determine the forward voltage and forward current for the diode
in Figure a for each of the diode models. Also find the voltage across
the limiting resistor in each case. Assume r’d = 10 ohm at the
determined value of forward current.
(b) Determine the reverse voltage and reverse current for the diode
in Figure b for each of the diode models. Also find the voltage across
the limiting resistor in each case. Assume IR = 1 uA.
17/37
Solution
a)
18/37
19/37
20/37
b)
21/37
22/37
Questions ?
23/37
Thank you
24/37

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HIGHER TECHNNOLOGICAL INSTITUTE

TENTH OF RAMADAN CITY

Principles of electronic Engineering

❑ Diode is made from a small piece of semiconductor material,

❑ The n region is called the cathode and is connected to a

❑ Notice that the negative side of

❑ 𝑽𝑩𝑰𝑨𝑺 , must be greater than the

• The diode forward voltage (𝐕𝐅 ) increases to

❑ Notice that the positive side of 𝑽𝑩𝑰𝑨𝑺

❑ Note that the depletion region is

• At 0 V across the diode, no reverse current.

• As you gradually increase 𝐕𝑹 , there is a very small

• When the applied bias voltage is increased to a

• As you continue to increase the 𝐕𝑹 , the current

The Ideal The Practical The Complete

❑ The ideal model of a diode is the least accurate approximation

❑ When the diode is forward-biased, it ideally acts like a closed

❑ When the diode is reverse-biased, it ideally acts like an open

Forward bias Reverse bias 10/37

The reverse current is neglected

❑ When the diode is forward-biased, it is equivalent to a closed switch in

❑ When the diode is reverse-biased, it is equivalent to an open switch

Forward bias Reverse bias 12/37

❑ The diode is assumed to have ze reverse

❑ When the diode is reverse-biased, it acts as an open switch in

❑ The barrier potential does not affect reverse bias, so it is not a

Forward bias 14/37

The curve slopes because the voltage

The characteristic curve for the

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