25AA256/25LC256: 256K SPI Bus Serial EEPROM
25AA256/25LC256: 256K SPI Bus Serial EEPROM
25AA256/25LC256: 256K SPI Bus Serial EEPROM
Features: Description:
• Max. Clock 10 MHz The Microchip Technology Inc. 25AA256/25LC256
• Low-Power CMOS Technology: (25XX256*) are 256 Kbit Serial Electrically Erasable
- Max. Write Current: 5 mA at 5.5V, 10 MHz PROMs. The memory is accessed via a simple Serial
Peripheral Interface (SPI) compatible serial bus. The
- Read Current: 6 mA at 5.5V, 10 MHz
bus signals required are a clock input (SCK) plus
- Standby Current: 1 A at 5.5V separate data in (SI) and data out (SO) lines. Access to
• 32,768 x 8-bit Organization the device is controlled through a Chip Select (CS)
• 64-Byte Page input.
• Self-Timed Erase and Write Cycles (5 ms max.) Communication to the device can be paused via the
• Block Write Protection: hold pin (HOLD). While the device is paused,
- Protect none, 1/4, 1/2 or all of array transitions on its inputs will be ignored, with the
exception of Chip Select, allowing the host to service
• Built-In Write Protection:
higher priority interrupts.
- Power-on/off data protection circuitry
The 25XX256 is available in standard packages includ-
- Write enable latch
ing 8-lead PDIP and SOIC, and advanced packaging
- Write-protect pin including 8-lead DFN and 8-lead TSSOP.
• Sequential Read
• High Reliability: Package Types (not to scale)
- Endurance: 1,000,000 erase/write cycles DFN PDIP/SOIC
(MF) (P, SN, SM)
- Data retention: > 200 years
CS 1 8 VCC
- ESD protection: > 4000V CS 1 8 VCC
• Temperature Ranges Supported: SO 2 7 HOLD SO 2 7 HOLD
- Industrial (I): -40C to +85C WP 3 6 SCK WP 3 6 SCK
- Automotive (E): -40°C to +125°C VSS 4 5 SI VSS 4 5 SI
Param.
Sym. Characteristic Min. Max. Units Test Conditions
No.
1 FCLK Clock Frequency — 10 MHz 4.5V Vcc 5.5V
— 5 MHz 2.5V Vcc 4.5V
— 3 MHz 1.8V Vcc 2.5V
2 TCSS CS Setup Time 50 — ns 4.5V Vcc 5.5V
100 — ns 2.5V Vcc 4.5V
150 — ns 1.8V Vcc 2.5V
3 TCSH CS Hold Time 100 — ns 4.5V Vcc 5.5V
200 — ns 2.5V Vcc 4.5V
250 — ns 1.8V Vcc 2.5V
4 TCSD CS Disable Time 50 — ns —
5 Tsu Data Setup Time 10 — ns 4.5V Vcc 5.5V
20 — ns 2.5V Vcc 4.5V
30 — ns 1.8V Vcc 2.5V
6 THD Data Hold Time 20 — ns 4.5V Vcc 5.5V
40 — ns 2.5V Vcc 4.5V
50 — ns 1.8V Vcc 2.5V
7 TR CLK Rise Time — 100 ns (Note 1)
8 TF CLK Fall Time — 100 ns (Note 1)
9 THI Clock High Time 50 — ns 4.5V Vcc 5.5V
100 — ns 2.5V Vcc 4.5V
150 — ns 1.8V Vcc 2.5V
10 TLO Clock Low Time 50 — ns 4.5V Vcc 5.5V
100 — ns 2.5V Vcc 4.5V
150 — ns 1.8V Vcc 2.5V
11 TCLD Clock Delay Time 50 — ns —
12 TCLE Clock Enable Time 50 — ns —
13 TV Output Valid from Clock — 50 ns 4.5V Vcc 5.5V
Low — 100 ns 2.5V Vcc 4.5V
— 160 ns 1.8V Vcc 2.5V
14 THO Output Hold Time 0 — ns (Note 1)
15 TDIS Output Disable Time — 40 ns 4.5V Vcc 5.5V (Note 1)
— 80 ns 2.5V Vcc 4.5V (Note 1)
— 160 ns 1.8V Vcc 2.5V (Note 1)
16 THS HOLD Setup Time 20 — ns 4.5V Vcc 5.5V
40 — ns 2.5V Vcc 4.5V
80 — ns 1.8V Vcc 2.5V
17 THH HOLD Hold Time 20 — ns 4.5V Vcc 5.5V
40 — ns 2.5V Vcc 4.5V
80 — ns 1.8V Vcc 2.5V
Note 1: This parameter is periodically sampled and not 100% tested.
2: TWC begins on the rising edge of CS after a valid write sequence and ends when the internal write cycle
is complete.
3: This parameter is not tested but ensured by characterization. For endurance estimates in a specific
application, please consult the Total Endurance™ Model which can be obtained from Microchip’s web site
at www.microchip.com.
Param.
Sym. Characteristic Min. Max. Units Test Conditions
No.
18 THZ HOLD Low to Output 30 — ns 4.5V Vcc 5.5V (Note 1)
High-Z 60 — ns 2.5V Vcc 4.5V (Note 1)
160 — ns 1.8V Vcc 2.5V (Note 1)
19 THV HOLD High to Output 30 — ns 4.5V Vcc 5.5V
Valid 60 — ns 2.5V Vcc 4.5V
160 — ns 1.8V Vcc 2.5V
20 TWC Internal Write Cycle — 5 ms (Note 2)
Time
21 — Endurance 1M — E/W 25°C, VCC = 5.5V (Note 3)
Cycles
Note 1: This parameter is periodically sampled and not 100% tested.
2: TWC begins on the rising edge of CS after a valid write sequence and ends when the internal write cycle
is complete.
3: This parameter is not tested but ensured by characterization. For endurance estimates in a specific
application, please consult the Total Endurance™ Model which can be obtained from Microchip’s web site
at www.microchip.com.
SCK
18 19
High-Impedance
SO n+2 n+1 n n n-1
Don’t Care 5
SI n+2 n+1 n n n-1
HOLD
CS
12
2 11
7
Mode 1,1 8 3
SI MSB in LSB in
High-Impedance
SO
CS
9 10 3
Mode 1,1
SCK Mode 0,0
13
14 15
Don’t Care
SI
Memory EEPROM
I/O Control X
Control Array
Logic
Logic Dec
Page Latches
SI
SO Y Decoder
CS
SCK
HOLD Sense Amp.
R/W Control
WP
VCC
VSS
0 1 2 3 4 5 6 7 8 9 10 11 21 22 23 24 25 26 27 28 29 30 31
SCK
Data Out
High-Impedance
SO 7 6 5 4 3 2 1 0
CS
Twc
0 1 2 3 4 5 6 7 8 9 10 11 21 22 23 24 25 26 27 28 29 30 31
SCK
Instruction 16-bit Address Data Byte
SI 0 0 0 0 0 0 1 0 15 14 13 12 2 1 0 7 6 5 4 3 2 1 0
High-Impedance
SO
CS
0 1 2 3 4 5 6 7 8 9 10 11 21 22 23 24 25 26 27 28 29 30 31
SCK
Instruction 16-bit Address Data Byte 1
SI 0 0 0 0 0 0 1 0 15 14 13 12 2 1 0 7 6 5 4 3 2 1 0
CS
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCK
Data Byte 2 Data Byte 3 Data Byte n (64 max)
SI 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
CS
0 1 2 3 4 5 6 7
SCK
SI 0 0 0 0 0 1 1 0
High-Impedance
SO
CS
0 1 2 3 4 5 6 7
SCK
SI 0 0 0 0 0 1 10 0
High-Impedance
SO
CS
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
SCK
Instruction
SI 0 0 0 0 0 1 0 1
CS
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
SCK
SI 0 0 0 0 0 0 0 1 7 6 5 4 3 2 1 0
High-Impedance
SO
Note: An internal write cycle (TWC) is initiated on the rising edge of CS after a valid write STATUS register
sequence.
WEL WPEN
WP pin Protected Blocks Unprotected Blocks STATUS Register
(SR bit 1) (SR bit 7)
0 x x Protected Protected Protected
1 0 x Protected Writable Writable
1 1 0 (low) Protected Writable Protected
1 1 1 (high) Protected Writable Writable
x = don’t care
XXXXXXX 25LC256
T/XXXXX I/MF e3
YYWW 0528
NNN 1L7
XXXXXXXX 25LC256
T/XXXNNN I/P e3 1L7
YYWW 0528
8-Lead SOIC (3.90 mm) Example: 8-Lead SOIC (208 mil) Example:
Note: For very small packages with no room for the Pb-free JEDEC designator
e3 , the marking will only appear on the outer carton or reel label.
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
8-Lead Plastic Dual Flat, No Lead Package (MF) – 6x5 mm Body [DFN-S]
PUNCH SINGULATED
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
D e
D1 b L
N N
E
E2
E1
EXPOSED
PAD
NOTE 1 1 2 2 1 NOTE 1
D2
A A2
A1 A3
NOTE 2
Units MILLIMETERS
Dimension Limits MIN NOM MAX
Number of Pins N 8
Pitch e 1.27 BSC
Overall Height A – 0.85 1.00
Molded Package Thickness A2 – 0.65 0.80
Standoff A1 0.00 0.01 0.05
Base Thickness A3 0.20 REF
Overall Length D 4.92 BSC
Molded Package Length D1 4.67 BSC
Exposed Pad Length D2 3.85 4.00 4.15
Overall Width E 5.99 BSC
Molded Package Width E1 5.74 BSC
Exposed Pad Width E2 2.16 2.31 2.46
Contact Width b 0.35 0.40 0.47
Contact Length L 0.50 0.60 0.75
Contact-to-Exposed Pad K 0.20 – –
Model Draft Angle Top φ – – 12°
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. Package may have one or more exposed tie bars at ends.
3. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
NOTE 1
E1
1 2 3
D
E
A A2
A1 L
c
e
b1 eB
b
Units INCHES
Dimension Limits MIN NOM MAX
Number of Pins N 8
Pitch e .100 BSC
Top to Seating Plane A – – .210
Molded Package Thickness A2 .115 .130 .195
Base to Seating Plane A1 .015 – –
Shoulder to Shoulder Width E .290 .310 .325
Molded Package Width E1 .240 .250 .280
Overall Length D .348 .365 .400
Tip to Seating Plane L .115 .130 .150
Lead Thickness c .008 .010 .015
Upper Lead Width b1 .040 .060 .070
Lower Lead Width b .014 .018 .022
Overall Row Spacing § eB – – .430
Notes:
1. Pin 1 visual index feature may vary, but must be located with the hatched area.
2. § Significant Characteristic.
3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" per side.
4. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
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Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
8-Lead Plastic Thin Shrink Small Outline (ST) – 4.4 mm Body [TSSOP]
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
E1
NOTE 1
1 2
b
e
c
A A2 φ
A1 L1 L
Units MILLIMETERS
Dimension Limits MIN NOM MAX
Number of Pins N 8
Pitch e 0.65 BSC
Overall Height A – – 1.20
Molded Package Thickness A2 0.80 1.00 1.05
Standoff A1 0.05 – 0.15
Overall Width E 6.40 BSC
Molded Package Width E1 4.30 4.40 4.50
Molded Package Length D 2.90 3.00 3.10
Foot Length L 0.45 0.60 0.75
Footprint L1 1.00 REF
Foot Angle φ 0° – 8°
Lead Thickness c 0.09 – 0.20
Lead Width b 0.19 – 0.30
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.15 mm per side.
3. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Revision C (11/03)
Corrections to Section 1.0, Electrical Characteristics.
Revision D (06/05)
Update package information
Revision E (08/05)
Remove Preliminary status. Revise Table 1-1, Params.
D011 and D012.
Revision F (05/07)
Update Pb-free; Replace Package Drawings (Rev. AP);
Update Product ID section.
Revision G (01/2013)
Revise Automotive E Temp; Revise Table 1-2, Param.
No. 21.
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