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    FCD880, FCD885: Dual Optically-Coupled Isolator

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    MERMER LAND
    The document describes a dual optically-coupled isolator in a single 8-pin dual in-line package. Each channel consists of a GaAs emitter optically coupled to a phototransistor, providing high current transfer ratio and 2500V minimum isolation input-to-output. The package contains two optically-coupled isolators that fit into a standard 16-pin DIP socket and operate from -55°C to +100°C with low coupling capacitance of typically 1.0pF. Electrical characteristics including input diode ratings, output transistor ratings, and coupled channel ratings are provided.

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    FCD880, FCD885: Dual Optically-Coupled Isolator

    Uploaded by

    MERMER LAND
    54 views2 pages
    The document describes a dual optically-coupled isolator in a single 8-pin dual in-line package. Each channel consists of a GaAs emitter optically coupled to a phototransistor, providing high current transfer ratio and 2500V minimum isolation input-to-output. The package contains two optically-coupled isolators that fit into a standard 16-pin DIP socket and operate from -55°C to +100°C with low coupling capacitance of typically 1.0pF. Electrical characteristics including input diode ratings, output transistor ratings, and coupled channel ratings are provided.

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    FCD880-FairchildSemiconductor

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    The document describes a dual optically-coupled isolator in a single 8-pin dual in-line package. Each channel consists of a GaAs emitter optically coupled to a phototransistor, providing high current transfer ratio and 2500V minimum isolation input-to-output. The package contains two optically-coupled isolators that fit into a standard 16-pin DIP socket and operate from -55°C to +100°C with low coupling capacitance of typically 1.0pF. Electrical characteristics including input diode ratings, output transistor ratings, and coupled channel ratings are provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    54 views2 pages

    FCD880, FCD885: Dual Optically-Coupled Isolator

    Uploaded by

    MERMER LAND
    The document describes a dual optically-coupled isolator in a single 8-pin dual in-line package. Each channel consists of a GaAs emitter optically coupled to a phototransistor, providing high current transfer ratio and 2500V minimum isolation input-to-output. The package contains two optically-coupled isolators that fit into a standard 16-pin DIP socket and operate from -55°C to +100°C with low coupling capacitance of typically 1.0pF. Electrical characteristics including input diode ratings, output transistor ratings, and coupled channel ratings are provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    5-21

    Dual Optically-Coupled FCD880,FCD885


    Isolator
    Optoelectronic Products

    General Description Package Outline


    The FCD880 and FCD885 comprise two distinct
    optoisolators with transistor output, in a single 8-pin
    dual in-line package. Each channel consists of a GaAs ~.380(9.652)~~
    emitter optically coupled to a phototransistor. 4

    .062 (1.575)
    High Current Transfer Ratio DIA
    2500 V Minimum Isolation Input-to-Output
    1011 0 Isolation Resistance
    Low Coupling Capacitance-Typically 1.0 pF
    1/0 Compatible With Integrated Circuits
    Two Packages Fit Into a Standard
    16-Pln DIP Socket

    Absolute Maximum Ratings


    Storage Temperature -55°C to +150°C
    Operating Temperature -55°C to +100°C
    Pin Temperature (Soldering, 5 s) 260°C
    Total Package Power Dissipation
    =
    at TA 25°C 400mW
    Derate Linearly from 25 ° C 5.3 mW/oC 1---.320 (8.128)----1
    Input Diode (Each Channel)
    VR Reverse Voltage 3.0 V
    IF Forward de Current 60 rnA
    Ipk Peak Forward Current Not••
    (1 liS pulse, All dimensions in inches bold and millimeters (parentheaes)
    330 pps) 3.0 A
    Toleranee unleas specified = ±.o 15 (± .381)
    Package weight is 0.4 gram
    Po Power Dissipation
    at TA = 25°C 100 mW
    Derate Linearly from 50°C 2 mW / °C Connection Diagram
    DIP (Top View)
    Output Transistor (Each Channel)
    VCE Collector-to-Emitter
    Voltage 30V
    VEC Emitter-to-Collector
    Voltage 6.0 V
    Po Power Dissipation
    at TA = 25°C 150mW
    Derate Linearly from 25°C 2 mW/oC
    IC Collector Current 30 rnA

    Pin
    1 Anode
    Channel #1
    2 Cathode
    3 Cathode
    Channel #2
    4 Anode
    5 Emitter
    Channel #2
    6 Collector
    7 Collector
    Channel #1
    8 Emitter
    5-22

    Typical Electrical FCD880


    Characteristics FCD885

    Electrical Characteristics-Input Diode TA = 25°C


    Symbol Characteristic Min Typ Max Units Test Conditions
    VF Forward Voltage 1.25 1.5 V IF = 60 rnA
    VR Reverse Voltage 3.0 5.5 V IR = 10 ~A
    CJ Junction Capacitance 100 pF VF = 0 V

    Electrical Characteristics-Output Transistor TA = 25°C


    Symbol Characteristic Min Typ Max Units Test Conditions
    VCEO Collector-to-Emitter Voltage
    FCD880, FCD885 30 65 V Ic = 1.0 rnA,
    IF = 0
    VECO Emitter-to-Collector Voltage
    FCD880, FCD885 6.0 10 V 1c = 100/LA
    ICEO Collector-to-Emitter Leakage Current
    FCD880, FCD885 5.0 100 nA VCE = 10 V,
    IF = 0
    CCE Collector-to-Emitter Capacitance 8.0 pF VCE = 0

    Electrical Characteristics-Coupled TA = 25°C


    Symbol Characteristic Min Typ Max Units Test Conditions
    VIO Input-to-Output Voltage 2500 4000 V
    VCE(sat) Collector-to-Emitter Saturation Voltage
    FDC880 0.24 0.4 V Ic = 2.0 rnA,
    IF = 16 rnA
    FCD885 0.2 0.3 V Ic = 250 ~A,
    IF = 20 rnA
    Ic/lF(CTR) Collector Current Transfer Ratio (Note 1)
    FCD880 30 50 % VCE = 10 V,
    IF = 10 rnA
    FCD885 10 20 % VCE = 10 V,
    IF = 10 rnA
    RIO Input-to-Output Resistance 10" n VIO = 500 V
    CIO Input-to-Output Capacitance 1.0 pF f = 1.0 MHz
    Collector Rise and Fall Times (Note 2) 2.0 ~s Ic = 2.0 rnA,
    VCE = 10 V,
    RL = 100 n

    Note.
    1. Collector current transfer ratio is defined as the ratio of the collector current to the forward bias input curreilt.
    2. Rise time is defined as the time for the collector current to rise from 10% to 90% of peak value. Fall time is defined as the time required for the current
    to decrease from 90% to 10% of peak value.

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