Ramos, Jushua D. (Exp 3)

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Southern Luzon State University

College of Engineering
ECE Department

ECE03L- ELECTRONIC SYSTEMS AND DESIGN


LABORATORY

Engr. EHXELL L. GONZALES


Instructor
NAME: RAMOS, JUSHUA D. DATE: MARCH 24, 2021
EXPERIMENT NO.3
RATING:
TITLE: Programmable Unijunction Transistor (PUT)

I. OBJECTIVE
1. To compare the PUT structure to that of the SCR.
2. To state how to set the PUT trigger voltage.
3. To demonstrate a practical method of testing a PUT with a multimeter.
4. To demonstrate the basic operation of a PUT through circuit testing.

II. INTRODUCTORY INFORMATION

Programmable unijunction transistors (PUT) are three-terminal thyristors that are


triggered into conduction when the voltage at the anode exceeds the voltage at the gate.
The PUT is similar to the UJT, but its intrinsic standoff ratio can be set by two external
resistors. Hence, the name "programmable" is used. A PUT is a more advanced version
of a unijunction transistor (UJT). In a programmable unijunction transistor, operating
characteristics such as base-to-base resistance, intrinsic standoff voltage, valley current,
and peak current can be programmed by setting the values of two external resistors.
Applications for programmable unijunction transistors (PUT) include thyristor triggers,
oscillators, pulse, and timing circuits, with frequencies up to 10 kHz. An integrated
circuit can include not only an integrated circuit chip, but also a circuit transistor such as
a programmable unijunction transistor.

Performance specifications for programmable unijunction transistors (PUT)


include peak current (with RG of 10K ohms and 1M ohms), valley current (with RG of
10K ohms and 1M ohms), gate-to-cathode forward voltage, gate-to-cathode reverse
voltage, gate-to-anode reverse voltage, anode-to-cathode voltage, peak non-repetitive
forward current, peak repetitive forward current, peak repetitive forward current, DC
forward anode current, DC gate current, power dissipation, storage temperature,
operating junction temperature. Programmable unijunction transistors (PUT) can be
packaged individually or in standard packaging for high-volume requirements, such as
automatic insertion equipment.

III. EQUIPMENTS AND COMPONENTS REQUIRED

2N6028 PUT 1k Ohm and 10k Ohm resistor

6Vdc power supply 2 SPDT switches

2 Digital multimeters Multisim program


IV. PROCEDURES

A. Testing a PUT with an Ohmmeter

1. Connect the positive lead of the multimeter to the anode of PUT and the negative lead
to the cathode. Set the multimeter to midrange scale and record the meter reading for
RAK.
2. Connect the negative lead of the multimeter to the gate of the PUT. Record the meter
reading for RAG.

B. Operation of a PUT

1. Construct the circuit as shown in Figure 3.1.

FIGURE 3.1

2. Set SW1 and SW2 as indicated and measure the voltage VA and current IAK.

3. Move SW1 in the other position and record the values of VA and current IAK.

4. Move SW1 back in the original position and record the values of VA and current IAK.

5. Move SW2 in the other position and record the values of VA and current IAK.

6. Move SW2 back in the original position and record the values of VA and current IAK.
V. DATA and RESULTS
For testing a PUT with an ohmmeter,

Figure 3.2. RAK

Figure 3.3. RAG

For operation of PUT,

Figure 3.4. PUT operation using 2N6028


Figure 3.5. SW1 = OFF, SW2 = OFF

Figure 3.6. SW1 = ON, SW2 = OFF

Figure 3.7. SW1 = OFF, SW2 = OFF


Figure 3.8. SW1 = OFF, SW2 = ON

Figure 3.9. SW1 = OFF, SW2 = OFF

Table 3.1. Summary of results in testing PUT


PUT RAK RAG
2N6028 4.989 GΩ 34.479 MΩ

Table 3.2. Summary of results in operating PUT


SW1 SW2 VA IAK

OFF OFF 5.999 V 0.043 µA

ON OFF 5.999 V 0A

OFF OFF 5.999 V -0.108 nA

OFF ON 5.999 V 0.215 nA

*OFF *OFF *5.999 V *-0.108 nA

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