0% found this document useful (0 votes)
45 views2 pages

TD3: Bipolar Junction Transistor Common Emitter and Limit Operation

This document discusses a bipolar junction transistor (BJT) in common emitter configuration and limiting its operation. It provides a problem set with questions about determining values like beta (β), alpha (α), and ICOE from the common emitter characteristics graph. It asks about how βAC changes across the characteristics and developing conclusions. Additional questions involve calculating βDC, αDC, IB, and IE given other values, and determining the safe operating region using maximum ratings.

Uploaded by

Sao Savath
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
45 views2 pages

TD3: Bipolar Junction Transistor Common Emitter and Limit Operation

This document discusses a bipolar junction transistor (BJT) in common emitter configuration and limiting its operation. It provides a problem set with questions about determining values like beta (β), alpha (α), and ICOE from the common emitter characteristics graph. It asks about how βAC changes across the characteristics and developing conclusions. Additional questions involve calculating βDC, αDC, IB, and IE given other values, and determining the safe operating region using maximum ratings.

Uploaded by

Sao Savath
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 2

TD3: Bipolar Junction Transistor

common emitter and limit operation

1. Summary

2. Problem set

1. a. For the common-emitter characteristics of Fig.1, find the dc at an operating


point of VCE = 6V and IC = 2 mA.
b. Find the value of  corresponding to this operating point.
c. At VCE = 6V, find the corresponding value of ICOE
d. Calculate the approximate value of ICBO using the dc beta value obtained in
part (a).
2. a. Using the characteristics of Fig.1(a), determine ICOE at VCE = 10V.
b. Determine dc at IB = 10 uA and VCE = 10V.
c. Using the dc determined in part (b), calculate ICBO.
3. a. Using the characteristics of Fig.1(a), determine ac at IB = 60 uA and VCE =
4V
b. Repeat part (a) at IB = 30 uA and VCE = 7V
c. Repeat part (a) at IB = 10 uA and VCE = 10V
d. Reviewing the results of parts (a) through (c), does the value of ac change
from point to point on the characteristics? Where are the high values located?
Can you develop any general conclusions about the value of ac on a set of
collector characteristics?
4. a. Given that dc = 0.980, determine the corresponding value of dc.
b. Given dc =120, determine the corresponding value of dc
c. Given that dc =120 and IC = 2 mA, find IE and IB
5. Determine the region of operation for a transistor having the characteristics of
Fig. 1(a) if ICmax = 6 mA, BVCE0 = 15V and PCmax = 35 mA.

Figure 1

You might also like