Intrinsic Semiconductors Are Pure Semiconductor, Their Conductivity Is Poor and As Such They Do Not Find
Intrinsic Semiconductors Are Pure Semiconductor, Their Conductivity Is Poor and As Such They Do Not Find
Intrinsic Semiconductors Are Pure Semiconductor, Their Conductivity Is Poor and As Such They Do Not Find
An atom is the tiny basic building block of all matters whether a solid matter, a liquid matter, or a
gaseous matter.
Electron a stable subatomic particle with a charge of negative electricity, found in all atoms and acting as
the primary carrier of electricity.
A valence electron is an outer shell electron that is associated with an atom, and that can participate in
the formation of a chemical bond. Electrons that are in orbit farther from the nucleus have higher energy and
less tightly bound to the atom than those closer to the nucleus.
Free electron any electron that is not attached to an ion, atom, or molecule and is free to move under
the influence of an applied electric or magnetic field.
3. What is the basic difference between conductors and insulators? How do semi-conductors differ from
conductors and insulators? Why does a semi-conductor have fewer free electrons than a conductor?
A conductor is something which allows electric current to flow through it freely whereas an insulator
prevents any electric current flowing through it. Mainly insulators are classified as solid materials due to the fact
they offer a large resistance to the flow of current however, metals are classified as conductors as they offer a
small resistance to the flow of current. So, the electricity can pass easily through the conductors.
Semiconductors are those materials whose electrical conductivity is between conductors and insulators.
The forbidden energy gap of a semiconductor is nearly same as insulator. The energy gap is narrower.
The valence electrons of semiconductors are more tightly bound to the atoms than those of conductors.
In a conductor, only one valence electron is loosely bound to the atom. This loosely bound electron breaks easily
to make free electrons. As compared to a semiconductor, which is characterized by an atom with four electrons.
It is difficult to break an electron like a conductor.
4. What is meant by the term intrinsic and extrinsic? What is the difference between intrinsic and extrinsic
semiconductors?
The term intrinsic means belonging to the essential nature or constitution of a thing and the term
extrinsic means not forming part of or belonging to a thing.
Intrinsic semiconductors are pure semiconductor, their conductivity is poor and as such they do not find
much application. Extrinsic semiconductors are semiconductors when a trivalent or pentavalent impurity is
added to a pure semiconductor, extrinsic semiconductor is obtained.
5. Define doping and explain the difference between a pentavalent atom and trivalent atom.
Doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of
modulating its electrical properties. The doped material is referred to as extrinsic semiconductors.
Pentavalent atoms have five valence electrons and its function is to increase the number of conduction-
band in intrinsic silicon. Pentavalent atom is used in n-type semiconductors. While trivalent atoms have three
valence electrons and its function is to increase the number of holes in intrinsic silicon. Trivalent atom is used in
p-type semiconductor.
6. Explain what the barrier potential is and how it is formed. What is the typical value of the barrier potential for a
silicon diode? For a germanium diode?
The potential barrier is the barrier that opposes charge flow across the junction normally. This barrier is
formed by the charge present in the space charge region. When a p-type material is brought in contact to a n-
type material charge flow across the junction takes place due to concentration gradient between the two sides
(n and p type). After some times the immobile ions are created near the contact which create electric field that
opposes flow of current.
At room temperature the typical value across the depletion layer for silicon is about 0.6 – 0.7 volts; and for
germanium is about 0.3 – 0.35 volts.