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Iscn-Channel Mosfet Transistor: Inchange Semiconductor

This document provides information on the ISCN-Channel MOSFET Transistor TK13A25D and ITK13A25D. It has a low drain-source on-resistance of 0.19 ohms and is an enhancement mode transistor with a threshold voltage between 1.5 to 3.5 volts. It is intended for use in switching voltage regulators and has maximum ratings for drain-source voltage, gate-source voltage, drain current, total dissipation, and operating junction temperature.

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47 views2 pages

Iscn-Channel Mosfet Transistor: Inchange Semiconductor

This document provides information on the ISCN-Channel MOSFET Transistor TK13A25D and ITK13A25D. It has a low drain-source on-resistance of 0.19 ohms and is an enhancement mode transistor with a threshold voltage between 1.5 to 3.5 volts. It is intended for use in switching voltage regulators and has maximum ratings for drain-source voltage, gate-source voltage, drain current, total dissipation, and operating junction temperature.

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INCHANGE Semiconductor

iscN-Channel MOSFET Transistor TK13A25D，ITK13A25D

·FEATURES
·Low drain-source on-resistance:
RDS(ON) = 0.19Ω (typ.) (VGS = 10 V)
·Enhancement mode:
Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

·DESCRITION
·Switching Voltage Regulators

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VDSS Drain-Source Voltage 250 V

VGS Gate-Source Voltage ±20 V

ID Drain Current-Continuous 13 A

IDM Drain Current-Single Pulsed 52 A

PD Total Dissipation @TC=25℃ 35 W

Tj Max. Operating Junction Temperature 150 ℃

Tstg Storage Temperature -55~150 ℃

·THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Channel-to-case thermal resistance


Rth(ch-c) 3.57 ℃/W

Channel-to-ambient thermal resistance


Rth(ch-a) 62.5 ℃/W

isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark


INCHANGE Semiconductor

iscN-Channel MOSFET Transistor TK13A25D，ITK13A25D

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 10mA 250 V

VGS(th) Gate Threshold Voltage VDS= 10V; ID=1.0mA 1.5 3.5 V

RDS(on) Drain-Source On-Resistance VGS=10V; ID=6.5A 190 250 mΩ

IGSS Gate-Source Leakage Current VGS= ±20V;VDS= 0V ±1 μA

IDSS Drain-Source Leakage Current VDS= 250V; VGS= 0V 10 μA

VSDF Diode forward voltage IDR =13A, VGS = 0 V 1.7 V

NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.

isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

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