This document contains BSIM3 MOSFET model parameters for NMOS and PMOS transistors from a process referred to as T58F. Key details include technology level 49, a gate oxide thickness of 4.1nm, and default temperature parameters. Threshold voltages and other parameters are provided for both NMOS and PMOS devices.
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TSMC 180
This document contains BSIM3 MOSFET model parameters for NMOS and PMOS transistors from a process referred to as T58F. Key details include technology level 49, a gate oxide thickness of 4.1nm, and default temperature parameters. Threshold voltages and other parameters are provided for both NMOS and PMOS devices.