This document is a proposal for a CEP project on power electronics. The project will involve designing an inverter using a bootstrap circuit to power the high-side MOSFET. Bootstrap circuits use a capacitor to store enough charge to fully turn on the high-side MOSFET, whose gate would otherwise be at a higher voltage than its source due to the inverter output. The project will calculate the required bootstrap capacitor size and demonstrate an inverter design that can be used for applications like variable frequency drives. It will also explain pulse width modulation control of the inverter.
This document is a proposal for a CEP project on power electronics. The project will involve designing an inverter using a bootstrap circuit to power the high-side MOSFET. Bootstrap circuits use a capacitor to store enough charge to fully turn on the high-side MOSFET, whose gate would otherwise be at a higher voltage than its source due to the inverter output. The project will calculate the required bootstrap capacitor size and demonstrate an inverter design that can be used for applications like variable frequency drives. It will also explain pulse width modulation control of the inverter.
This document is a proposal for a CEP project on power electronics. The project will involve designing an inverter using a bootstrap circuit to power the high-side MOSFET. Bootstrap circuits use a capacitor to store enough charge to fully turn on the high-side MOSFET, whose gate would otherwise be at a higher voltage than its source due to the inverter output. The project will calculate the required bootstrap capacitor size and demonstrate an inverter design that can be used for applications like variable frequency drives. It will also explain pulse width modulation control of the inverter.
This document is a proposal for a CEP project on power electronics. The project will involve designing an inverter using a bootstrap circuit to power the high-side MOSFET. Bootstrap circuits use a capacitor to store enough charge to fully turn on the high-side MOSFET, whose gate would otherwise be at a higher voltage than its source due to the inverter output. The project will calculate the required bootstrap capacitor size and demonstrate an inverter design that can be used for applications like variable frequency drives. It will also explain pulse width modulation control of the inverter.
A bootstrap circuit is needed when an MOSFET is used for the high-side transistor of the output switch. Nowadays a number of power supply ICs comes with a bootstrap circuit mounted, and thus an understanding of the operation of the bootstrap circuit in connection with the evaluation of power supply circuits may be helpful.Due to the low on-resistance, the MOSFET can be used as a power switch to improve efficiency. Given the same on-resistance, the MOSFET can be a lower cost option compared with the MOSFET. That said, turning MOSFET completely on as a high-side switch requires a high enough VGS, that is, a voltage higher than the drain voltage.Incidentally, for the same reasons as those mentioned above, bootstrap circuits are also used in non synchronous rectifying circuits. Beyond the MOSFET, bootstrap circuits are also applied to reduce the saturation voltage in circuits that use bipolar NPN transistors.
Objectives / Outcomes This project used for inverter design. And also for such like technique for variable frequency drive VFD used in inverter design.It showed a detailed calculation method as well as a general rule of thumb estimation for the bootstrap capacitor. The control method is known as ‘PWM’ for 'Pulse Width Modulation'. This means the DC is switched on and off very quickly (chopped) by the Transistor switches. A sine wave of motor current is made by a series of DC pulses where the first has a very short ‘on’ period, followed by
1 a longer on period, then longer until the widest pulse appears in the centre of the positive sine wave, then smaller until the DC is inverted and the same pattern of pulses generate the negative part of the sine wave. The flux equations and the torque equation can be defined in any reference frame, denoted by superscript “a.”
π T Te = [C( )λam ] a 2 is
References [1] A.Blumenfeld, A. Cervera and S. Ben-Yaakov, "Analysis and design of DC-isolated gate drivers", Proc. IEEE 27th Conv. Elect. Electron. Eng., pp. 1-5, Nov. 2012. [2] J.-H. Jung, H.-G. Ku, W.-S. Im and J.-M. Kim, "A PWM control strategy for low-speed operation of three-level NPC inverter based on bootstrap gate drive circuit", Proc. IEEE Appl. Power Electron. Conf. Expo. (APEC), pp. 297-302, Mar. 2014. [3] C. Klumpner and N. Shattock, "A cost-effective solution to power the gate drivers of multilevel inverters using the bootstrap power supply technique", Proc. 24th Annu. IEEE Appl. Power Electron. Conf. Expo., pp. 1773-1779, Feb. 2009. [4] "DIPIPM application note bootstrap circuit design manual" in Dual-in-Line Package Intelligent Power Module, Tokyo, Japan:Mitsubishi Electronic Corp, 2016.
