Band Theory of Solids

1 The formation of energy band is a preferred in

(a) Solids (b) Liquids (c) Gases (d) All of above
Ans: a
2 What describes energy bands in solids?
(a) It is a set of continuous energy levels
(b) It is a set of closely spaced allowed energy levels
(c) It is a set of widely spaced allowed energy levels
(d) It is collection of energy of all allowed energy levels
Ans: b
3 Valence band comprises of electrons that are
(a) Freely moving inside the solid
(b) Electrons in the outermost orbit of the atom
(c) Mobile electrons
(d) None of above
Ans: b
4 Conduction band comprises of electrons that are
(a) Always near the top of the crystal
(b) Always at the surface of the crystal
(c) Anywhere in the solid moving freely
(d) Always bound to its parent atom in outermost orbit
Ans: c
5 Band gap energy is the energy required by electron to
(a) Jump from bottom surface of the solid to its top surface
(b) Jump from centre of the solid to its top surface
(c) Set free itself from valence band and start conduction
(d) Move itself from one corner of solid to other corner
Ans: c
6 Forbidden energy gap contains electrons that
(a) Belong to innermost orbits of atoms
(b) Belong to outermost orbits of atoms
(c) Are shared to form a bond between atoms
(d) It contains no electrons
Ans: d
 Band gap energy for metals, insulators and semiconductors
1 At absolute zero (T = 0 K) conduction band for metals will be
(a) Fully occupied (b) Completely empty
(c) Partially occupied (d) None of above
Ans: b
2 Above absolute zero (T > 0 K), conduction band in metal is
(a) Fully occupied (b) Completely empty
(c) Partially occupied (d) None of above
Ans: c
3 At absolute zero (T = 0 K) valence band for metals will be
(a) Fully occupied (b) Completely empty
(c) Partially occupied (d) Partially occupied by holes
Ans: a

4 Above absolute zero (T > 0 K), valence band in metal is

(a) Fully occupied (b) Completely empty
(c) Partially empty (d) None of above
Ans: c
5 For metals above T>0K conduction band and valence band are
(a) Separated by large bandgap energy (b) Separated by small bandgap energy
(c) Separated by moderate bandgap energy (d) Overlapping
Ans: d
6 In metals the band gap energy / forbidden energy gap is equal to
(a) 0 eV (b) > 5eV (c) 0.7 eV (d) ~ 1 eV
Ans: a
7 In insulators the band gap energy / forbidden energy gap is equal to
(a) 0 eV (b) > 5eV (c) 0.7 eV (d) ~ 1 eV
Ans: b
8 In semiconductor the band gap energy / forbidden energy gap is equal to
(a) Either 0.7 eV or 1.1 eV (b) 0.7 eV
(c) 1.1 eV (d) the width of the forbidden energy gap
Ans: d
9 At absolute zero (T=0K) Valence band for a semiconductor is
(a) Fully occupied (b) Completely empty
(c) Partially occupied (d) None of above
Ans: a
10 Above absolute zero (T>0K) Valence band for a semiconductor is
(a) Fully occupied (b) Completely empty
(c) Partially empty (d) None of above
Ans: b
11 At absolute zero (T=0K) Conduction band for a semiconductor is
 (a) Fully occupied (b) Completely empty
(c) Partially occupied (d) None of above
Ans: b
12 At absolute zero (T>0K) Conduction band for a semiconductor is
(a) Fully occupied (b) Completely empty
(c) Partially occupied (d) None of above
Ans: c
13 In a semiconductor, electron jumps from valence band to conduction band after absorbing a photon of
wavelength . Which of the following represents band gap correctly?
(a) Eg = hc/ (b) Eg = h/c
(c) Eg = /hc (b) Eg = c/h
Ans: a
14 Which is the correct ordering of the band gaps energy?
(a) Diamond > silicon > copper (b) Diamond < silicon < copper
(c) Diamond < silicon > copper (d) Diamond < silicon < copper
Ans: a
Intrinsic and extrinsic semiconductors
1 Which of the following is referred to as extrinsic semiconductor?
(a) Only n-type semiconductor (b) Only p-type semiconductor
(c) Both n- and p-type semiconductors (d) A pure semiconductor
Ans: c
2 Which of the following is referred to as intrinsic semiconductor?
(a) Only n-type semiconductor (b) Only p-type semiconductor
(c) Both n- and p-type semiconductors (d) A pure semiconductor
Ans: d
3 If ne is concentration of electrons and np is concentration of holes, then in intrinsic semiconductors
(a) ne = np (b) ne > np (c) ne < np (d) ne  np
Ans: a
4 The bond that exists in a semiconductor is
(a) Ionic bond (b) Covalent bond
(c) Metallic bond (d) Hydrogen bond
Ans: b
5 P-type and N-type extrinsic semiconductors are formed by adding impurities of valancy?
(a) 5 and 3 respectively (b) 5 and 4 respectively
(c) 3 and 5 respectively (d) 3 and 4 respectively
Ans: c
6 Conduction in intrinsic semiconductors is due to
(a) Only free electrons (b) Only holes
(c) Both free electrons and holes (d)Either free electrons or holes
Ans: c
Effect of external factors on Electrical Conductivity
1 With increase in temperature, electrical conductivity in metals
(a) Increases (b) Decreases
(c) Almost remains constant (d) There is no effect, just heating
Ans: b
2 With increase in temperature, electrical conductivity in semiconductors
(a) Increases (b) Decreases
 (c) Almost remains constant (d) There is no effect, just heating
Ans: a
3 When optical radiations of moderate intensity incidents on metals, electrical conductivity
(a) Increases (b) Decreases
(c) Almost remains constant, with little heating (d) There is no effect
Ans: c
4 When optical radiations of moderate intensity incidents on semiconductors, electrical conductivity
(a) Increases (b) Decreases
(c) Almost remains constant, with little heating (d) There is no effect
Ans: a
5 With increase in impurity concentration in metals, electrical conductivity
(a) Increases (b) Decreases
(c) Almost remains constant (d) There is no effect
Ans: b
6 With increase in impurity concentration (doping) in semiconductors, electrical conductivity
(a) Increases (b) Decreases
(c) Almost remains constant (d) There is no effect
Ans: a
Electrical Conductivity
1 The expression for electrical conductivity in intrinsic semiconductor is
(a) 𝜎𝑖 = 𝑒𝑛𝑖 (𝜇𝑒 + 𝜇𝑝 ) (b) 𝜎𝑝 = 𝑒𝑛𝑝 𝜇𝑝
(c) 𝜎𝑒 = 𝑒𝑛𝑒 𝜇𝑒 (d) 𝜎 = 𝑒(𝑛𝑒 𝜇𝑒 + 𝑛𝑝 𝜇𝑝 )
Ans: a
2 The expression for electrical conductivity in N-type semiconductor is
(a) 𝜎𝑖 = 𝑒𝑛𝑖 (𝜇𝑒 + 𝜇𝑝 ) (b) 𝜎𝑝 = 𝑒𝑛𝑝 𝜇𝑝
(c) 𝜎𝑒 = 𝑒𝑛𝑒 𝜇𝑒 (d) 𝜎 = 𝑒(𝑛𝑒 𝜇𝑒 + 𝑛𝑝 𝜇𝑝 )
Ans: c
3 The expression for electrical conductivity in P-type semiconductor is
(a) 𝜎𝑖 = 𝑒𝑛𝑖 (𝜇𝑒 + 𝜇𝑝 ) (b) 𝜎𝑝 = 𝑒𝑛𝑝 𝜇𝑝
(c) 𝜎𝑒 = 𝑒𝑛𝑒 𝜇𝑒 (d) 𝜎 = 𝑒(𝑛𝑒 𝜇𝑒 + 𝑛𝑝 𝜇𝑝 )
Ans: b
4 The mobility of charge carriers is defined as
𝑣 𝐸
(a) 𝜇 = 𝐸𝑑 (b) 𝜇 = 𝑣𝑑 × 𝐸 (c) 𝜇 = 𝑣 (d) 𝜇 = 𝑣𝑑 + 𝐸
𝑑
Ans: a
5 The unit for resistivity is
(a) Ohm (b) Ohm / m (c) Ohm – m (d) Ohm / V
Ans: c
6 The unit for conductivity is
(a) mho (b) mho / m (c) mho – m (d) mho / V
Ans: b
7 The resistance of conductor of unit length and unit area of cross section is
(a) Resistivity (b) Resistance (c) Conductance (d) Conductivity
Ans: a
8 The amount of charge flowing through any cross section area per unit time is
(a) Current (b) Current density (c) Conductance (d) Conductivity
Ans: a
 Fermi Energy and FD probability distribution function
1 Fermi-Dirac statistics is applied to electrons because
(a) Electrons are treated as pure particles
(b) Electrons are treated as waves
(c) Electrons obey exclusion principle and are indistinguishable particles
(d) They do not obey Maxwell-Boltzmann statistics
Ans: c
2 Fermi level for a metal is
(a) Highest energy level occupied by electrons at 00 C
(b) Highest energy level occupied by electrons at 00 F
(c) Highest energy level occupied by electrons at 0 K
(d) Addition of energy of all available electron energy levels
Ans: a
3 Fermi level for an intrinsic semiconductor (at T=0K) is
(a) Highest energy level occupied by electrons at 0 0C
(b) Highest energy level occupied by electrons at 00 F
(c) Highest energy level occupied by electrons at 0 K
(d) Reference energy level at the centre of the forbidden energy gap
Ans: d
5 The Fermi-Dirac probability distribution function is
1 1
(a) 𝑓(𝐸) = (𝐸+𝐸𝑓 )/𝑘𝑇 (b) 𝑓(𝐸) = (𝐸−𝐸𝑓 )/𝑘𝑇
1+𝑒 1−𝑒
1 1
(c) 𝑓(𝐸) = (𝐸−𝐸𝑓 )𝑘𝑇 (d) 𝑓(𝐸) = (𝐸−𝐸𝑓 )/𝑘𝑇
1+𝑒 1+𝑒
Ans: d
6 The Fermi Function represents the probability of occupation which of the following energy level by an
electron at T K?
(a) For electrons only at Fermi energy level
(b) For electrons at any energy level
(c) For electrons only above Fermi energy level
(d) For electrons only below Fermi energy level
Ans: b
7 At T=0 K, the probability that electron occupy an energy level E<Ef is
(a) 1 (b) 0 (c) 0.5 (d) 0.75
Ans: a
8 At T=0 K, the probability that electron occupy an energy level E>Ef is
(a) 1 (b) 0 (c) 0.5 (d) 0.75
Ans: 0
9 At T=0K, the probability that electron will occupy an energy level E=Ef is
(a) 1 (b) 0 (c) 0.5 (d) Anything between 0 to 1
Ans: d
10 At T > 0 K, the probability that electron will occupy an energy level E=Ef is
(a) 1 (b) 0 (c) 0.5 (d) 0.75
Ans: c

Fermi level and Fermi energy for Intrinsic and extrinsic semiconductors
1 For an intrinsic semiconductors Fermi Level is
(a) Midway of the forbidden energy gap
 (b) Midway of donor atoms levels and conduction band
(c) Midway of acceptor atoms level and valence band
(d) At any position between conduction band and valence band
Ans: a
2 In an n-type semiconductor, Fermi level at T= 0 K is
(a) Midway of the forbidden energy gap
(b) Midway of donor atoms levels and conduction band
(c) Midway of acceptor atoms level and valence band
(d) At any position between conduction band and valence band
Ans: b
3 In a p-type semiconductor, Fermi level at T= 0 is
(a) Midway of the forbidden energy gap
(b) Midway of donor atoms levels and conduction band
(c) Midway of acceptor atoms level and valence band
(d) At any position between conduction band and valence band
Ans: c
4 In an n-type semiconductor, Fermi level at very high temperature shifts to
(a) Midway of the forbidden energy gap
(b) Midway of donor atoms levels and conduction band
(c) Midway of acceptor atoms level and valence band
(d) At any position between conduction band and valence band
Ans: a
5 In a p-type semiconductor, Fermi level at very high temperature shifts to
(a) Midway of the forbidden energy gap
(b) Midway of donor atoms levels and conduction band
(c) Midway of acceptor atoms level and valence band
(d) At any position between conduction band and valence band
Ans: a
Diode and Transistor Working
1 If Efn is Fermi level of N-type region and Efp is Fermi level of P region in a semiconductor, under
equilibrium
(a) Efn > Efp (b) Efn < Efp (c) Efn = Efp (d) Unstable
Ans: c
2 If Efn is Fermi level of N-type region and Efp is Fermi level of P region in a semiconductor, under forward
bias
(a) Efn > Efp (b) Efn < Efp (c) Efn = Efp (d) Unstable
Ans: a
3 If Efn is Fermi level of N-type region and Efp is Fermi level of P region in a semiconductor, under reverse
bias
(a) Efn > Efp (b) Efn < Efp (c) Efn = Efp (d) Unstable
Ans: b
4 In a transistor, emitter region is
(a) Heavily doped (b) Moderately doped (c) Lightly doped (d) Cannot be specified
Ans: a
5 In a transistor, base region is
(a) Heavily doped (b) Moderately doped (c) Lightly doped (d) Cannot be specified
 Ans: c

6 In a transistor, collector region is

(a) Heavily doped (b) Moderately doped (c) Lightly doped (d) Cannot be specified
Ans: b
7 In an equilibrium state of an NPN transistor, what is true for Fermi energy levels
(a) (Fermi energy emitter) > (Fermi energy base) > (Fermi energy collector)
(b) (Fermi energy emitter) < (Fermi energy base) > (Fermi energy collector)
(c) (Fermi energy emitter) = (Fermi energy base) = (Fermi energy collector)
(d) (Fermi energy emitter) > (Fermi energy base) < (Fermi energy collector)
Ans: c
8 In a biased of an NPN transistor, what is true for Fermi energy levels
(a) (Fermi energy emitter) > (Fermi energy base) > (Fermi energy collector)
(b) (Fermi energy emitter) < (Fermi energy base) > (Fermi energy collector)
(c) (Fermi energy emitter) = (Fermi energy base) = (Fermi energy collector)
(d) (Fermi energy emitter) > (Fermi energy base) < (Fermi energy collector)
Ans: a
Hall Effect
1 Hall effect is true for
(a) Metals only (b) Semiconductors only
(c) Both metals and semiconductors (d) For N-type semiconductors only
Ans: c
2 When current flows along the length of the semiconductor slab and magnetic field applied along its
thickness, Hall voltage (or Hall electric field) developed is
(a) Along the length (b) Along the thickness
(c) Along the width (d) None of the above
Ans: c
3 In Hall effect, by keeping all other parameters constant, only if thickness of the material is increased,
the Hall voltage (or Hall electric field)
(a) Decreases (b) Increases
(c) Remains constant (d) Changes the direction
Ans: a
4 In Hall effect, by keeping all other parameters constant, only if thickness of the material is reduced, the
Hall voltage (or Hall electric field)
(a) Decreases (b) Increases
(c) Remains constant (d) Changes the direction
Ans: b
5 In Hall effect, by keeping all other parameters constant, only if the magnitude of current is increased,
the Hall voltage (or Hall electric field)
(a) Decreases (b) Increases
(c) Remains constant (d) Changes the direction
Ans: b
6 In Hall effect, by keeping all other parameters constant, only if the magnitude of current is decreased,
the Hall voltage (or Hall electric field)
(a) Decreases (b) Increases
(c) Remains constant (d) Changes the direction
 Ans: a

7 In Hall effect, by keeping all other parameters constant, if only the direction of the current is reversed
(magnitude is same). The Hall voltage (or Hall electric field)
(a) Decreases (b) Increases
(c) Remains constant (d) Changes the direction
Ans: d
8 In Hall effect, by keeping all other parameters constant, only if the strength of magnetic field is
increased, the Hall voltage (or Hall electric field)
(a) Decreases (b) Increases
(c) Remains constant (d) Changes the direction
Ans: b
9 In Hall effect, by keeping all other parameters constant, only if the strength of magnetic field is
decreased, the Hall voltage (or Hall electric field)
(a) Decreases (b) Increases
(c) Remains constant (d) Changes the direction
Ans: a
10 In Hall effect, by keeping all other parameters constant, if only the direction of the magnetic field is
reversed (magnitude is same). The Hall voltage (or Hall electric field)
(a) Decreases (b) Increases
(c) Remains constant (d) Changes the direction
Ans: d
Solar Cell
1 A solar cell converts ______
(a) heat energy into electrical energy (b) heat energy into light energy
(a) light energy into electrical energy (b) light energy into heat energy
Ans: a
2 The solar cell works for
(a) Infra-red light rays (b) Ultra-violet light rays
(c) Visible light rays (d) For entire range of electromagnetic spectrum
Ans: d
3 A solar cell works on the principle of
(a) Photoelectric effect (b) Photovoltaic effect
(c) Photoluminescence (d) Photo-combustion
Ans: b
4 If anti-reflection coating is made over the solar cell
(a) It will increase reflection of light rays and efficiency of solar cell will decrease
(b) It will increase reflection of the light rays and efficiency of solar cell will increase
(c) It will reduce the reflection of light rays and efficiency of solar cell will increase
(d) It will reduce the reflection of light rays and efficiency of solar cell will decrease
Ans: c
5 In a solar cell short circuit current refers to _________ current when load resistance is ________
(a) Maximum, minimum (b) Minimum, maximum
(c) Maximum, maximum (d) Minimum, minimum
Ans: a
6 In a solar open circuit voltage refers to _________ voltage when load resistance is ________
(a) Maximum, minimum (b) Minimum, maximum
(c) Maximum, maximum (d) Minimum, minimum
Ans: c
7 The fill factor of a solar cell is the ratio of
(a) Actual power output to theoretical maximum power
(b) Theoretical maximum power to actual power output
(c) Actual power output to incident power
(d) Theoretical maximum power to incident power
Ans: a
8 Efficiency of a solar cell is the ratio of
(a) Actual power output to theoretical maximum power
(b) Theoretical maximum power to actual power output
(c) Actual power output to incident power
(d) Theoretical maximum power to incident power
Ans: c