Transistor Output (Low Input Current) : Semiconductor Technical Data
Transistor Output (Low Input Current) : Semiconductor Technical Data
Transistor Output (Low Input Current) : Semiconductor Technical Data
These devices consist of a gallium arsenide infrared emitting diode optically
coupled to a monolithic silicon phototransistor detector, in a surface mountable,
small outline, plastic package. They are ideally suited for high density [CTR = 100% Min]
applications, and eliminate the need for through–the–board mounting.
• Convenient Plastic SOIC–8 Surface Mountable Package Style Motorola Preferred Devices
NOTE: Thickness through insulation between input and output is ≥ 0.5 mm.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Optoelectronics
Motorola, Inc. 1995 Device Data 1
MAXIMUM RATINGS — continued (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
TOTAL DEVICE
Input–Output Isolation Voltage(1,2) VISO 3000 Vac(rms)
(60 Hz, 1.0 sec. duration)
Total Device Power Dissipation @ TA = 25°C PD 250 mW
Derate above 25°C 2.94 mW/°C
Ambient Operating Temperature Range(3) TA –55 to +100 °C
Storage Temperature Range(3) Tstg –55 to +150 °C
Lead Soldering Temperature (1/16″ from case, 10 sec. duration) — 260 °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(4)
Characteristic Symbol Min Typ(4) Max Unit
INPUT LED
Forward Voltage (IF = 1.0 mA) VF — 1.05 1.3 V
Reverse Leakage Current (VR = 6.0 V) IR — 0.1 100 mA
Capacitance C — 18 — pF
OUTPUT TRANSISTOR
Collector–Emitter Dark Current (VCE = 5.0 V, TA = 25°C) ICEO1 — 1.0 50 nA
(VCE = 5.0 V, TA = 100°C) ICEO2 — 1.0 — µA
Collector–Emitter Breakdown Voltage (IC = 100 µA) V(BR)CEO 30 90 — V
Emitter–Collector Breakdown Voltage (IE = 100 µA) V(BR)ECO 7.0 7.8 — V
Collector–Emitter Capacitance (f = 1.0 MHz, VCE = 0) CCE — 7.0 — pF
COUPLED
Output Collector Current MOC215 IC (CTR)(5) 200 (20) 500(50) — µA (%)
(IF = 1.0 mA, VCE = 5.0 V) MOC216 500 (50) 800 (80) — µA (%)
MOC217 1.0 (100) 1.3 (130) — mA (%)
Collector–Emitter Saturation Voltage (IC = 100 µA, IF = 1.0 mA) VCE(sat) — 0.35 0.4 V
Turn–On Time (IC = 2.0 mA, VCC = 10 V, RL = 100 Ω) ton — 7.5 — µs
Turn–Off Time (IC = 2.0 mA, VCC = 10 V, RL = 100 Ω) toff — 5.7 — µs
Rise Time (IC = 2.0 mA, VCC = 10 V, RL = 100 Ω) tr — 3.2 — µs
Fall Time (IC = 2.0 mA, VCC = 10 V, RL = 100 Ω) tf — 4.7 — µs
Input–Output Isolation Voltage (f = 60 Hz, t = 1.0 sec.)(1,2) VISO 3000 — — Vac(rms)
Isolation Resistance (VI–O = 500 V)(2) RISO 1011 — — Ω
Isolation Capacitance (VI–O = 0, f = 1.0 MHz)(2) CISO — 0.2 — pF
1. Input–Output Isolation Voltage, VISO, is an internal device dielectric breakdown rating.
2. For this test, pins 1 and 2 are common, and pins 5, 6 and 7 are common.
3. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
4. Always design to the specified minimum/maximum electrical limits (where applicable).
5. Current Transfer Ratio (CTR) = IC/IF x 100%.
1.8 IF = 1 mA
1
1.6
1.4
0.1
TA = – 55°C
1.2
25°C
100°C
1 0.001
1 10 100 1000 0.05 0.1 0.2 0.5 1 2 5
IF, LED FORWARD CURRENT (mA) IF, LED INPUT CURRENT (mA)
Figure 1. LED Forward Voltage versus Forward Current Figure 2. Output Current versus Input Current
1.8
IF = 1 mA
1.6 NORMALIZED TO:
MOC217 TA = 25°C
1.4
1.2
1 MOC216 1
0.8
0.6 MOC215
0.4
0.2
0 0.1
0 1 2 3 4 5 6 7 8 9 10 –60 –40 –20 0 20 40 60 80 100 120
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) TA, AMBIENT TEMPERATURE (°C)
20
NORMALIZED TO: 18 CLED
VCE = 10 V f = 1 MHz
100 TA = 25°C 16
C, CAPACITANCE (pF)
14
(NORMALIZED)
12
10
VCE = 30 V 10
8
1 CCE
6
10 V 4
0.1 2
0 20 40 60 80 100 0.01 0.1 1 10 100
TA, AMBIENT TEMPERATURE (°C) V, VOLTAGE (VOLTS)
Figure 5. Dark Current versus Ambient Temperature Figure 6. Capacitance versus Voltage
–A–
8 5 NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
K B Y14.5M, 1982.
1 4 2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.182 0.202 4.63 5.13
D 8 PL B 0.144 0.164 3.66 4.16
0.13 (0.005) M T A M C 0.123 0.143 3.13 3.63
G D 0.011 0.021 0.28 0.53
G 0.050 BSC 1.27 BSC
H 0.003 0.008 0.08 0.20
J 0.006 0.010 0.16 0.25
SEATING K 0.224 0.244 5.69 6.19
–T– PLANE C
0.038 (0.0015) STYLE 1:
PIN 1. ANODE
2. CATHODE
H J 3. NC
4. NC
5. EMITTER
6. COLLECTOR
7. BASE
8. NC
CASE 846–01
ISSUE B
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*MOC215/D*
4 ◊ Motorola Optoelectronics Device Data
MOC215/D