SIMULATION OF A PV MODULE

(USING MATLAB)
(ELEC5564 – COURSEWORK)

WRITTEN BY

OLADAPO Opeoluwa Ayokunle

(200581534)

SUBMITTED TO

Dr. Li ZHANG

SCHOOL OF ELECTRONIC & ELECTRICAL ENGINEERING

THE UNIVERSITY OF LEEDS
LEEDS
LS2 9JT

26 October 2010
AIMS AND OBJECTIVES

The aims of the exercise include;

 To improve the understanding of photovoltaic (PV) power module

 To understand and describe the methods and/or algorithms that are commonly used to
build the model of a PV power module

 To simulate the I-V characteristics and P-V characteristics of a PV module with specified
parameters

 To study the effects of various parameters contained in the PV power module

 To analyze the behaviour of the PV power module system under different atmospheric
conditions

2
 PRINCIPLES OF OPERATION OF A PHOTOVOLTAIC POWER MODULE

The photovoltaic (PV) module converts solar radiation to electrical energy directly, without any
processes in between by exploiting the advantage of the electrical properties of doped
semiconductors p-n junction devices which can be triggered by light.

The basic steps in the operation of a PV module are:

 The generation and collection of light-generated carriers to generate a current;

 The generation of a very large voltage across the PV module; and

 The dissipation of power in the load and all associated resistances in the PV module.

Since the conversion to electrical energy involves no moving parts, the PV module is advantageous
as very little maintenance is required. Also, the semiconductor materials are very abundant in nature
and renewable sources (especially silicon) and produce no known harmful waste products. In spite of
all the outlined advantages the most significant disadvantage is the typical module efficiency of up to
15% for commercial crystalline silicon PV modules (although up to 25% efficiency has been recorded
in the laboratory)1 which can be attributed to semiconductor materials and varying environmental
conditions.

Equivalent Circuit model of a single photovoltaic (PV) cell

A PV module usually consists of individual solar cells electrically connected (in parallel to increase
the current and/or series to increase voltage) to increase their effective power output, since a single
solar cell has a voltage output between 0.5V and 0.7V which is relatively low for power applications.
The electrical operation of a PV cell can be estimated by the equivalent circuit shown in figure 1.

RS I ISC – short-circuit current

ID ISh ID – diode diffusion current
ISh – shunt current (ohmic losses)
ISC RP RL I – output current
RP – shunt resistance
RS – series resistance
RL – load resistance

Figure 1: Equivalent circuit model of a single photovoltaic cell

Mathematical representation of the PV module

1
http://www.iea-pvps.org/pv/materials.htm
3
The equations for the operation of the equivalent circuit model shown in figure 1 can be derived as
shown below:

Diode diffusion current, ID

Using the Shockley’s diode equation, this can be expressed as;

q ( V + I RS ) q ( V + I RS ) q ( V + I RS )
I D =I S (exp
[ Ak T C ] −1)I D =I S (exp
IS – Reverse Saturation Current (A)
[ Ak T C ]
−1)I D =I S (exp
Ak T C
k – Boltzmann’s constant (J/K)
[ −1)
]
-------------------------------------------------
V – Output Voltage (V) 1 A – Junction Perfection Factor
q – Charge of one electron (Coulombs) T C – Cell Temperature (K)

Reverse saturation current, IS

This is a factor of the intrinsic charge carrier concentration of the semiconductor and it is directly
proportionate to temperature. This current can be described by the following equation;

TC 3 q Eg 1 1
I S=I ¿
( ) { [
TR
exp −
kA T R T C ]} ------------------------------------------------- 2

IOR – Reverse Saturation current (A) at reference temperature, T R

Eg – Band gap energy (eV) T R – Reference temperature (K)
TC, q, k and A are as defined in equation 1

Short-circuit current, ISC

This is the current measured at V=0 and it is dependent on the irradiance and cell temperature as
shown in the equation below;

I SC ={ I SCR +k i ( T C −T R ) } G ---------------------------------------------------- 3

ISCR = Short-circuit current generated at reference temperature, T R

ki = Temperature coefficient of the short-circuit current
G = Irradiance (KW/m2)
TC and TR are as defined in equation 1

Therefore, the current, I (I = ISC – ID – ISh) for a single PV cell can be expressed as;

q (V + I R S) (V + I R S)
( [
I =I SC −I S exp
Ak T C ] )
−1 −
RP
---------------------------------------4

For a PV array with np cells in parallel and ns cells in series, equation 4 is derived to be a non-linear
and implicit equation (equation 5).

4
 ( Vn + I R ) −1 − ( Vn )
( R
)
I 1+ sT =nP I SC −n P I S exp
R sHT ([ q
S

Ak T C
sT

]) S

RsHT
---------------5

nP nS
R sHT =
× R P (total shunt resistance); R sT = × R S(total series resistance)
n S OF SOLVING NON-LINEAR EQUATION
METHOD nP

The mathematical representation of the PV array derived in equation 5 can be re-arranged to give;

V V

(
f ( I )=I 1+
R sT
R sHT )
−n P I SC −nP I S exp ([ q ( nS
+ I R sT

Ak T C ])
) −1 − ( )nS
R sHT
---------------6

The above is a non-linear, implicit equation which has to be solved numerically using a root-finding
algorithm by equating f(I) to zero i.e. f(I) = 0. The root-finding algorithm used for this exercise is the
Newton-Raphson method for solving numerical equation.

Principle of Newton-Raphson approximation algorithm

This principle is based on an initial guess of the root of f(I) = 0 at I i, then a better guess is given at Ii+1
defined as;
where f’(I) is the gradient of the
f (I ) function f(I) at the point I
I =I −
i+1
f '(I )

The relative approximate error, Er is calculated and compared to the pre-defined error tolerance, E a
(expressed as a percentage of the desired root) and the iterative process of finding the root
satisfying f(I) = 0 is ONLY stopped when the Er = Ea.

I i +1−I i
Er =
|( )|
I i +1
∗100 (In, f(In))

In percentage

In+1 In
tangent

Figure 2: Graphical illustration of the Newton-Raphson method

5
PROGRAM LISTING FOR THE SIMULATION OF A PV MODULE

FLOWCHART

Start

Acquiring all information about PV and

computing any model parameters

Set V=0
Initialize I as Isc

While
I>0

Yes

Evaluate f(I), f’(I) and Inew

if Yes
abs(Inew)>Ea I=Inew

No

Iresult=Inew
Vresult=V

if Yes
Iresult==0

No
Increment V
and
iteration count

Plot P-V and I-V curves

Stop

6
MATLAB CODE

%This program simulates the I-V and P-V characteristics of a PV module

%NOTE: This code should not be reproduced without the permission of the
%code owner: OLADAPO Opeoluwa Ayokunle

% All the given data is defined

A=1.72; %Ideality factor
q=1.6e-19; %Electron charge in Coulombs
K=1.380658e-23; %Boltzmann constant in Joules/Kelvin
Eg=1.1; %Band gap energy in eV
Ior=19.9693e-6; %Reverse saturation current at reference temperature in
Amperes
Iscr=3.3; %Short-circuit current at reference temperature in Amperes
Ki=1.7e-3; %Temperature coefficient of the short-circuit current
Ns=40; %Number of cells in series
Np=2; %Number of cells in parallel
Rs=5e-5; %Series resistance in Ohms
Rp=5e5; %Parallel resistance in Ohms
Tr=301.18; %Reference temperature in Kelvin

%To request user input for the ambient temperature and the irradiance level
G = input ('Enter Irradiance (G) in KW/m2: ');
Ta = input ('Enter ambient temperature (Ta) in degree Celsius (oC): ');

%This segment of the program calculates all parameters needed in

calculating f(I) and f'(I)
Ta=Ta+273; %To calculate ambient temperature in Kelvin
RsT=(Ns/Np)*Rs; %To calculate the total series resistance
RshT=(Np/Ns)*Rp; %To calculate the total parallel resistance
Tc=Ta+(0.2*G); %To calculate the cell temperature in Kelvin
Is=(Ior.*((Tc/Tr).^3))*(exp(((q*Eg)/(K*A))*((1/Tr)-(1/Tc)))); %To
calculate the diode reverse saturation current in Amperes
Isc=(Iscr+(Ki*(Tc-Tr)))*(G); %To calculate the short-circuit current in
Amperes

%This segment calculates an element in f(I)and f'(I) to reduce the program

execution time
Kd=(q/(A*K*Tc));
%This segment of the program initializes the current, voltage, relative
error tolerance and the maximum number of iterations
I=Isc; %Initializes I as Isc
V=0; %Initializes V as zero
Ea=0.0005; %Initializes the error tolerance as 0.5 percent (i.e. 0.5%)
Ni=0; %Defines Ni as number of iterations and initializes it as zero
Vi=0.001; %Defines the voltage increment in steps of 0.01
Er=1000; %Initializes the relative approximate error for newton-raphson
loop (second loop) to start
Ipv=Isc*Np; %Initializing the array for storing the values of calculated I
Vpv=V; %Initializing the array for storing the values of calculated V

%The first loop iteratively generates the value of V corresponding to a

value of I
%Since the interesting values of I are positive integers including zero, a
while loop is used
while (I>0)
%The second/inner loop for Newton-Raphson method of evaluating the
value of I
while (abs(Er)>Ea)
Ni=Ni+1;

7
 %The function f(I), its derivative f'(I) and the relative
approximate error are defined here
fI=(I*(1+(RsT/RshT)))-(Isc*Np)+((Is*Np)*(exp(Kd*((V/Ns)+(I*RsT)))-
1))+((V/Ns)/RshT);
fprimeI=(1+(RsT/RshT)+((Is*Np)*(Kd*RsT)*exp(Kd*(V/Ns)+(I*RsT))));
Inew=I-(fI/fprimeI);
Er=((Inew-I)/Inew)*100;
I=Inew;
if (I<0) %This helps to avoid calculating negative values
of I and P
I=0;
break;
end;
if (Ni==200000) %This is the limit on the number of iterations
possible
break;
end;
end; %This marks the end of the Newton-Raphson iteration loop
(second/inner loop)

Ipv=[Ipv,I]; %To store the value of I in the Ipv array

Er=1000; %Reset the relative approximate error for subsequent
running of second loop
if (I==0)
Vpv=[Vpv,V]; %To store the value of V in the Vpv array
break;
else
Vpv=[Vpv,V]; %To store the value of V in the Vpv array
V=V+Vi;
end;
end; %This marks the end of the first loop for generating values of V

%This segment plots the graph for the P-V and I-V curves
figure(1), plot(Vpv,Ipv);
grid on;
title('I-V Characteristics of a PV array');
xlabel('V - Voltage in Volts');
ylabel('I - Current in Amperes');

figure(2), plot(Vpv,Ipv.*Vpv);
grid on;
title('P-V Characteristics of a PV array');
xlabel('V - Voltage in Volts');
ylabel('P - Power in Watts');

8
RESULTS AND DISCUSSION

The efficiency of a PV module is measured under standard conditions stated below;

G = 1KW/m2 - Irradiance
AM = 1.5 - Spectral distribution
TC = 25oC - Cell temperature

Thus, the I-V and PV characteristics of the simulated PV module with the given specifications under
standard conditions is shown below with the short-circuit current (I SC), open-circuit voltage (VOC),
maximum power point (MPP), voltage at maximum power point (V MPP) and current at maximum
power point (IMPP).

P-V Characteristics of a PV array

I-V Characteristics of a PV array
120
7
X: 17.45
X: 0 Y: 103.5
Y: 6.59
6 100
X: 17.45
Y: 5.93

5
80
I - Current in Amperes

P - Power in Watts

60

40
2

20
1

X: 21.76
Y: 0
0 0
0 5 10 15 20 25 0 5 10 15 20 25
V - Voltage in Volts V - Voltage in Volts

Figure 3: I-V and PV characteristics (G=1KW/m 2, Ta=25oC)

From the above plots, ISC=6.59A, VOC=21.76V, MPP=103.5W, IMPP=5.93A, VMPP=17.45V.

Effect of temperature on I-V and P-V curves

To show the effect of temperature, three plots at G=0.8KW/m 2, Ta=16oC, 36oC and 56oC is simulated.

The effect of increasing the temperature is seen by comparing the values from figure 4, 5 and 6 as;

 The short-circuit current (ISC) (thus the current) slightly increases.

 The open-circuit voltage (VOC) (thus the voltage) significantly decreases according to the
equation.
d V oc
=−2.3 × N c mV /℃
dT

9
  The maximum power point (MPP) significantly decreases (as power is the product of voltage
and current) as the current change is insignificant compared to the voltage change.

I-V Characteristics of a PV array P-V Characteristics of a PV array

6 90

80

5
70

4 60
I - Current in Amperes

P - Power in Watts
50

3
40

2 30

20

1
10

0 0
0 5 10 15 20 25 0 5 10 15 20 25
V - Voltage in Volts V - Voltage in Volts

Figure 4: I-V and PV characteristics (G=0.8KW/m 2, Ta=16oC)

From the above plots, ISC=5.247A, VOC=22.0V, MPP=85.35W, IMPP=4.769A, VMPP=17.90V.

I-V Characteristics of a PV array P-V Characteristics of a PV array

6 80

70
5

60

4
I - Current in Amperes

50
P - Power in Watts

3 40

30
2

20

1
10

0 0
0 5 10 15 20 25 0 5 10 15 20 25
V - Voltage in Volts V - Voltage in Volts

Figure 5: I-V and PV characteristics (G=0.8KW/m 2, Ta=36oC)

From the above plots, ISC=5.302A, VOC=20.34V, MPP=75.99W, IMPP=4.733A, VMPP=16.06V.

10
 I-V Characteristics of a PV array P-V Characteristics of a PV array
6 70

60
5

50
4
I - Current in Amperes

P - Power in Watts
40

30

2
20

1
10

0 0
0 5 10 15 20 0 5 10 15 20
V - Voltage in Volts V - Voltage in Volts

Figure 6: I-V and PV characteristics (G=0.8KW/m 2, Ta=56oC)

From the above plots, ISC=5.356A, VOC=18.46V, MPP=66.61W, IMPP=4.675A, VMPP=14.25V.

Effect of irradiance on I-V and P-V curves

To show the effect of irradiance, three plots at G=1KW/m 2, 0.8KW/m2, 0.5KW/m2 and Ta=30oC is
simulated.

I-V Characteristics of a PV array P-V Characteristics of a PV array

3.5 50

45
3
40

2.5 35
I - Current in Amperes

30
P - Power in Watts

25

1.5
20

15
1

10

0.5
5

0 0
0 5 10 15 20 25 0 5 10 15 20 25
V - Voltage in Volts V - Voltage in Volts

Figure 7: I-V and PV characteristics (G=0.5KW/m 2, Ta=30oC)

From the plots in figure 7, ISC=3.303A, VOC=20.06V, MPP=46.97W, IMPP=2.953A, VMPP=15.91V.

11
 I-V Characteristics of a PV array P-V Characteristics of a PV array
6 80

70
5

60

4
I - Current in Amperes

50

P - Power in Watts
3 40

30
2

20

1
10

0 0
0 5 10 15 20 25 0 5 10 15 20 25
V - Voltage in Volts V - Voltage in Volts

Figure 8: I-V and PV characteristics (G=0.8KW/m 2, Ta=30oC)

From the above plots, ISC=5.285A, VOC=20.9V, MPP=78.8W, IMPP=4.742A, VMPP=16.62V.

I-V Characteristics of a PV array P-V Characteristics of a PV array

7 120

6
100

5
80
I - Current in Amperes

P - Power in Watts

60

40
2

20
1

0 0
0 5 10 15 20 25 0 5 10 15 20 25
V - Voltage in Volts V - Voltage in Volts

Figure 9: I-V and PV characteristics (G=1.0KW/m 2, Ta=30oC)

From the above plots, ISC=6.607A, VOC=21.3V, MPP=100.6W, IMPP=5.913A, VMPP=17.01V.

The effect of increasing the irradiance is seen by comparing the values from figure 7, 8 and 9 as;

 There is a slight increase in the open-circuit voltage (V OC) and thus the voltage.
12
  The short-circuit current (ISC) (thus the current) increases significantly according to the
equation

I SC =I SC at 1
( kwm )× G ( kwm )
2 2

 The maximum power point (MPP) significantly increases (as power is the product of voltage
and current).

13
CONCLUSION

The method deployed in solving the mathematical model of the PV module is the Newton-Raphson
approximation algorithm which finds the root(s) of the non-linear, implicit function generated by the
mathematical model of the PV module. The Newton-Raphson approximation algorithm was used
because it has one of the fastest convergence rates to the root and the function to be iteratively
solved has one minimum root. Although, it also has obvious disadvantages stated as follows;

 The initial guess has to be close enough to the root of the equation else the solution may not
converge or may produce invalid results.
 The function and the derivative of the function have to be evaluated which might be quite
time-consuming for larger systems.

The error tolerance and the voltage increment determine the accuracy of results but the
compromise is at the expense of program execution time. The smaller the error tolerance and the
voltage increment, the greater the program execution time. For application in the tracking of
maximum power point, systems with faster response are employed to cope with rapidly changing
environmental conditions thus lower program execution time is desirable. The program above uses
error tolerance of 0.05% (0.0005) and voltage increment of 0.001 with an approximate program
execution time of 2.086 seconds.

The modelled system with the given parameters produces maximum power of 103.5Watts under
standard conditions of irradiance 1KW/m2, spectral air mass AM 1.5 and cell temperature 25 ℃ .
Also, increasing irradiance at constant ambient temperature increases the maximum power output
of the PV module while increasing the ambient temperature at constant irradiance decreases the
maximum power output of the PV module. Therefore, it is most desirable to operate PV modules at
high irradiance with the ambient temperature at the lowest value.

14