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Assignment End Semesster-SSD

solid state devices assignment

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Sai Nrusimha Deepak Burra
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35 views2 pages

Assignment End Semesster-SSD

solid state devices assignment

Uploaded by

Sai Nrusimha Deepak Burra
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Assignment for End Semester Evaluation Jan-June 2021

Course Name: Solid State Devices


Course No: ELE537

 All questions are compulsory


 Last date of Submission: 01/05/2021
 Precise answers will be greatly appreciated.
 40% weighted will be there based on the quality of assignment submitted by
candidate.
 No step marking

1. Explain why a semiconductor acts as an insulator at O°K and why its conductivity
increases with increasing temperature.

2. Explain why the energy levels of an atom become energy bands in a solid.

3. How does the reverse saturation current of a p-n diode vary with temperature? (b) How
does the diode voltage (at constant current) vary with temperature?

4. Explain energy band diagram of MOS devices in details. Discuss the band bending with
the application of applied voltage with mathematical analysis.

5. A Si sample is doped with 1017 As atoms/cm3. What is the equilibrium hole concentration
p0 at 300 K? Where is EF relative to Ei?

6. A Si bar 0.1cm long and 100 µm2 in cross-sectional area is doped with 1017 cm-3
phosphorus. Find the current at 300 K with 10 V applied.

7. Consider a pn junction in equilibrium at room temperature (T = 300 K) for which the


doping concentrations are NA = 1018/cm3 and ND = 1016/cm3 and the cross-sectional area
A = 10−4 cm2. Calculate pp, np0, nn, pn0, V0, W, xn, xp, and QJ. Use n+ = 1.5×1010/cm3.

8. For the pn junction considered in Q. No. 7 if NA =1018/cm3, ND =1016/cm3, A=10−4cm2, and


ni = 1.5×1010/cm3, let Lp = 5 μm, Ln = 10 μm, Dp (in the n region) = 10 cm2/V.s, and Dn (in
the p region) =18 cm2/V・s. The pn junction is forward biased and conducting a current I
=0.1 mA. Calculate: (a) IS ; (b) the forward-bias voltage V; and (c) the component of the
current I due to hole injection and that due to electron injection across the junction.
9. For the NPN BJT (Figure 1) consider base is connected to ground, the collector is
connected to a 10V supply through a 2 KΩ resistor and a 3MA current source is connected
to the emitter with the polarity so that current is drawn out of the emitter terminal. If β=
100 and IS = 10-15A find the voltage at the emitter and the collector and calculate the base
current.
2kΩ

ic

αIE
IS
B

ISE = IS / α

3m
A

Figure 1

10. In the design shown in Fig. 1 base terminal voltage VB = -1.5V. Consider VBE = 0.7V, find
the value of collector voltage VE, current gains (α, β) and collector voltage (VC). If a BJT
device having β= ∞ what will be the terminal voltage values VB, VE and VC?

10KΩ

VC

VB
VE
10KΩ
10KΩ

Figure 2

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