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124 views302 pagesSemiconductor Device Fundamentals Soluti
Uploaded by
VARSHALI SHARMACopyright
© © All Rights Reserved
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CONTENTS
‘There are no problems and therefore, no problem solutions for the "read-only"
Chapters 4,9, and 13
PART I Semiconductor Fundamentals
CHAPTER 1 Semiconductors: A General Introduction
CHAPTER 2 Carrier Modeling
CHAPTER 3 Carrier Action
PART IIA pn Junction Diodes
CHAPTER 5 pn Junction Electrostatics
CHAPTER 6 pn Junction Diode: I-V Characteristics
CHAPTER 7 pn Junction Diode: Small-Signal Admittance
CHAPTER 8 pn Junction Diode: Transient Response
PART UB BJTs and Other Jui
CHAPTER 10 BJT Fundamentals
n Devices
CHAPTER 11 BIT Static Characteristics
CHAPTER 12 BIT Dynamic Response Modeling
CHAPTER 14 MS Contacts and Schouky Diodes
R2 Part II Supplement and Review
PART III Field Effect Devices
CHAPTER 15 Field Effect Introduction—The J-FET and MESFET
CHAPTER 16 MOS Fundamentals
CHAPTER 17 MOSFETs.-The Essentials
CHAPTER 18 Nonideal MOS
CHAPTER 19 Modern FET Structures
Lt
34
S1
o-1
7
84
12-1
144
R2-1
15-1
16-1
74
18-1
19-1 [CHAPTER 1
Ll
(a) From Table 1.1...
(i Si or Ge
Gi) AIP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InP, InAs, or InSb
(b) Crystalline material has the same atomic pattem or order throughout the material, while
polycrystalline material has crystalline subsections that are misaligned with respect to each
other.
(©) A unit cell is a small portion of a crystal that could be used to reproduce the crystal.
(The preceding is from the first sentence of Subsection 1.2.1.)
@ = — Unitcelt Atoms/unit cell
oan
@ 1A=108 cm
( a (one lattice constant)
(g) 4
(h) As summarized in Table 1.3: (
direction, and < >--equivalent directi
(i) See Subsection 1.3.2,
tal plane, { }--equivalent planes, { ]--crystal
12
In the Alp sGag 5As unit cell, pictured below, fcc sublattice sites containing the Column TIL
elements are equally occupied by Al and Ga atoms.
Ll 13
(a) Ge crystallizes in the diamond lattice where there are 8 atoms per unit cell (see
Subsection 1.2.3). Thus
8 8
DENSITY = tt
(5.65 x 10-8)3
4.44 x 1022 atoms/em3
14
(@) From Fig. 1.3(), we conclude nearest-neighbors in the bec lattice lie along the unit cell
body diagonal. Since the body diagonal of a cube is equal to V3 times a cube side length
(the lattice constant a),
‘Nearest-Neighbor) _ ¥3_
( Distance he 2%
(b) From Fig. 1.3(d), nearest-neighbors in the fc lattice are concluded to lie along a cube-
face diagonal. The diagonal of a cube face is equal to V2 times a cube side length. Thus
Nearest-Neighbor) _ V2,
( Distance ie 24
15
(a) Looking at Fig. 1.4(a) one concludes
e
e
e
e
e
ho
(b) For Si at room temperature a = 5.43 x 10°8 cm. From the above figure one concludes
that there are (1/4 x 4 corner atoms) + 1 body atom = 2 atoms per an area of a? on the
(100) surface. ‘Thus one has
2 = — 2 ___ = 6.28 x 1014 Si atoms/em?
@ (5.43 x 10°8)2
1-2 (© For a (110) plane one has the atom placement pictured below
(@) On the (110) plane in the area a x V3a one has (1/4 x 4 corner atoms) + (1/2 x2 edge
atoms) + 2 body atoms = 4 atoms. Thus one has
4 2N2 14 Si 2
Todi ~ Gasx 19H? ~ 259 X 10! Si atomslem
(©) MATLAB program script (paralleling Exercise 1.3)...
Solution to Problem 1.5(e)
Neinput ("input number of atoms on (100) face of unit cell, N=
a=input (‘lattice constant in angstrom, a = ');
eurfaccden=N* (1.0€16) /(a*2) Amuuber of atoms/em-2
(Note: This and all other problem solutions are available on disk.)
16
(a) (i) Following the procedure outlined in the text
1,3,1 intercepts (normalized)
1,1, 1 /intercept}s
3,1,3 reduction to lowest whole-number set
(313) .Miller index notation for plane
Gi) As noted in the text near the end of Subsection 1.2.4, the normal to a plane in the
cubic crystal system has the same Miller indices as the plane.
(3137 -Miller index notation for normal to plane
(b) @) Again following the Miller indexing procedure,
vl normalized intercepts
42 .[Lfintercept]s.
1,12 lowest whole-number set
(12) .-Miller indices of plane
1-3 Gi) Assume the vector has a length d. Its projections along the x, y, and z axes are then
0, 0, and d, respectively. Reducing to the lowest possible whole-number set and
enclosing in square brackets, then yields
(001) Miller indices of direction vector
Aa
For each of the given planes, the Miller indexing procedure must be reversed to determine
the intercepts of the given plane on the coordinate axes. Using part (c) as an example, one
proceeds as follows:
(123) «Miller indices
1, 2,3 =-[fintercept}s
L121B intercepts
The plane in question intercepts the x, y, z coordinate axes at a, a/2, and a/3, respectively.
Note that any multiple of the cited intercept set — such as 3a, 2a, a— would also be correct.
Alll such planes are parallel equivalent planes.
4,
LEP
x
(@)
Zz
a
x
©)
14 Ls
Miller indices may be viewed as specifying the projection (in arbitrary units) of the to-be-
pictured vectors along the coordinate axes. For example, [010] corresponds to a vector
with a unit projection along the y-axis and no projection along the x- or z-axes, In other
words, [010] is coincident with the +y coordinate axis. The other required direction
vectors are deduced in a similar manner and are as pictured below.
19
As noted in the problem statement, two directions (/4yk1/1] and [/gk2/)] will be mutually
perpendicular if
Ayha + kik + hia = 0
(a) Here (hyil1] = [100], requiring ha = 0. All directions (Okzl2] are perpendicular to
[100]. Two specific simple examples are (001] and [011].
(b) Given [f141/1] — [111], one requires the Miller indices of the perpendicular direction to
be such that hz + k2 +2 =0. Two specific examples are (01T] and [112].
1-5 Lio
‘As shown in the following left-hand figure, when the [011] and [010] directions are
pictured simultancously, it becomes obvious that the angle between the two directions is
45°. Alternatively, the angle between the two directions can be computed using the cos(@)
relationship in Problem 1.9. Specifically, given [fyk1/1] = [011] and (/pk2/2] = [010],
cos(@) = 1/Y2 and @= 45°. ‘The required positioning of the "grooves" on the wafer’s
surface is pictured in the following right-hand figure.
fou)
| Jas°
{010}
grooves
Lu
(@) If the Fig. P1.11 unit cell is conceptually copied and the cells stacked like blocks in a
nursery, one concludes the resulting latttice is a [simple cubic lattice|
(b) There is one atom inside the unit cell and the unit cell volume is a3. Thus
atoms/unit volume = 1/a3].
(©) For a (110) surface plane the atom positioning would be as pictured below.
Ha
Latom _ 1
unit area ~ (ay(f2ay > V3a2
(@) [111] ... The specified vector has equal projections on the three coordinate axes.
1-6 Liz
Equivalent planes: (a) 6, (b) 12, (c) 8.
Equivalent directions: (d) 6, (e) 12, (f) 8.
NOTE: The answers may be deduced from geometrical considerations — or ~ by noting the
total number of possible combinations of the given, and negatives of the given, Miller
indices.
113
(a) In the simple cubic latice the nearest-neighbor distance is a, where a isthe side length
of the cube, and the atomic radius r is therefore a/2. Moreover, there is one atom per unit
cell. ‘Thus
Occupied volume = Fx r3 = $x (a/28 = na%V6
Total cell volume = a3
Occupied volume
Ratio = “Total volume
aT
“6
(b) In the body centered cubic lattice the atom in the center and any one of the cube comer
atoms are nearest neighbors. Thus 1/2 the nearest neighbor distance is r = V3 a/4. Also,
there are two atoms per unit cell.
diagonal = 4r = 3a
Occupied volume = 24% r3) = $x (V3.a/4)3 = 8, a3
Total cell volume = a3
jo — Occupied volume _ V3x
Ratio = "Total volume = 8
1-7 (c) For a face centered cubic lattice, the closest atoms lie in a cube face. Also, there. are.
four atoms per unit cell in the fcc lattice.
face diagonal = 4r =Y2a; r = \2a/4
Occupied volume = 4Gnr3) = be 2 a/4y3 -2y a
Total volume = a3
io = 2k
Ratio = “==
(@ As emphasized in Fig. 1.4(c), the atom in the upper front comer of the unit cell and the
atom along the cube diagonal 1/4 of the way down the diagonal are nearest neighbors.
‘Since the diagonal of the cube is equal to V3 times a cube side length, the center-to-center
distance between nearest-neighbor atoms in the diamond lattice is V3 a/4, and the atomic
radius r= 13 a/8. Moreover, there are eight atoms per unit cell in the diamond lattice.
Thus
Occupied volume = 8Gnr3) 2 2, (3.a)3 = Bras
Total volume = a3
jo = 38
Ratio = 7g
1-8 ICHAPTER 2
21
(a/(b) The MATLAB program script yielding both the part (a) and part (b) results is listed
below. A combined plot comparing the part (a) result (solid-line) and part (b) result
(dashed-line) is included before the program script. At T = 300 K the part (a) relationship
yields [EGG00K) = 1.1245 eV|
al
val
vol
1.04] + SS
o 100 200 300 400 500 600
TKK)
MATLAB program script.
%EG Computation (EG versus T)
close
clear
sparabolic Fit Parameters
EGO=1.170;
4. 7300-47
b=636;
Parabolic computation and plot
7=[0:5:600];
21 EG-EGO-a.* (T.*2)./ (T+);
EGSUU=EGO-a..* (300.2) . /(3004D) ;
plot (T,EG); axis({0 600 1.0 1.2]); grid:
xlabel (*T(K)*); ylabel ("EG(eV) ") ;
hold on
Linear computation and plot
EGO=1.205;
plot (T, EG,"
hold off
89=300K result
£6300
22
(a) See Fig. 2.4(a).
(b) See Tig. 2.4(b) or the left-hand side of Fig. 2.7(b).
(0) See the left-hand side of Fig. 2.7(c).
(@) See Fig. 2.10(@)
(©) See Fig. 2.10(b).
23
(a) See the right-hand side of Fig. 2.7(b).
(b) Sce the right-hand side of Fig. 2.7(c).
(©) See Fig. 2.13(a).
(d) See Fig. 2.13(b).
(©) See the extreme left-hand side of either Fig. 2.13(a) or Fig. 2.22(b).
(P) See the extreme left-hand side of Fig. 2.13(b).
(g) Sce the extreme right-hand side of Fig. 2.16.
(h) See the extreme left-hand side of Fig, 2.18.
(i See the middle of Fig. 2.18.
(i) See the extreme right-hand side of Fig. 2.18.
(k) See Fig. 2.19.
(WD See Fig. 2.19.
2-2 24
{@) The removal of the column III Ga atom with three valence electrons leaves five dangling
bonds in the vicinity of the vacancy. The removal of the column V As atom with five
valence electrons leaves three dangling bonds in the vicinity of the vacancy.
(b) When a Si atom with four valence electrons is inserted into the missing Ga site, there is
‘one extra electron that does not fit snugly into the bonding pattern. Conversely, when a Si
‘atom is inserted into the missing As site, there are one too few bonds to complete the
bonding scheme.--There is a hole in the bonding scheme.
Answer-(a) Answer-(b)
(© [n-type] ... The extra electron noted in part (b) is readily released yielding an increase in
the electron concentration.
(A) [p-type] ... The missing bond noted in part (b) is readily filled at room temperature
yielding an increase in the hole concentration.
©
@
n-type p-type
2-3 25
As noted in Subsection 2.4.1, gc(E)dE represents the number of conduction band
states/cm} lying in the energy range between E and E + dE. It follows that the number of
states/cm3 in the conduction band lying between energies Ec and Ec + 94 is simply
‘obtained by integrating gc(E)dE over the noted range of energies.
Et kT + poe peer
statesfem3 = [ geEae = Mn 200 | ni YE~Eq dE
le. wa de
ida are
wis
©
2.6
(a) The probability of electrons occupying states at a given energy under equilibrium,
conditions is given by the Fermi function. Here we are told the energy of interest is
E=Ep. Thus
oe 1 L
RED) = oer boat = 2
(b) The desired probability is again given by the Fermi function. Here we are told Ep = Ee
and the energy of interest is E = E¢ + kT. Consequently,
E, + kT) = ——__1___
RE e+ RD = eat)
(©) The problem statement indicates flEc+kT)
flEctkD), or
1 1 1 __e(GetkT-ER KT
14 CEctkT-EpVAT | 4 (EetkT-ERUT | 4 @ (Ect kT-Ep)
‘Thus we must have
Ec + kT Ep = Ep— (Ec + KD)
or
2-4 22
The distribution of electrons in the conduction band is given by ge(EY{E); the distribution
of holes in the valence band is given by gy(E)[1 —/(E)]. Working with the electron
distribution we note,
AE) = —1___z (8 - Fever
1+ e€-Enikt
for all E > Ey if the semi-
conductor is nondegenerate
Thus
gelE YE) = mela Es) eo
Ph
= « (EE)! e-E-EDMT
‘The extrema points of any function are obtained by taking the derivative of the function and
setting the derivative equal to zero.
df .(E YE] = —K—— eE-FORT — (pp)? @E-BDKT
fs) e THEE e
2(E-E,)'?
set
0
Clearly
2NEpeakE
or
Epeak - Ee = kT/2
and
Epoak = Ec + kT/2| for electrons in the conduction band
‘The development leading to the peak energy of Eyeak = Ey ~ KT/2 for holes in the valence
band is completely analogous.
2-5 28
‘The electron population at any energy is given by ge(EY{E). Also, since the semiconductor
is nondegenerate
= 1 __ zs .-€epir .
AE) Tae@— ep = e «for all E > Ec
‘The electron population at E = Ee + 5kT normalized to the peak electron population at
E-E.,+kT/2 is therefore
ratio = Sc(Ect SKM(Eet SKT)
Bc(Ect ET /2)flEctkT/2)
= VSKT eEetSkT-ERT _ AS 2 2
= Vin 2EokI-Bpet ¥10 e 3.51 x 10
29
‘The hole and electron distributions are given respectively by
Bc(EY(E) = Bade. YE~Eg e~€-BrVeI
we
(electron dist.)
a [mn 2m -egiser YE~Eg e“€-Boikt
KS
and :
(hole dist.) = g(E{1— fe) = ™P ro VE, E e(-Exvkt
wh
- (sivare Lm esto VERSE et aur
293
wh
Note that the approximate (non-degenerate) expressions for the Fermi function established
in Subsection 2.4.2 were employed in writing down the carrier distributions.
2-6 ‘The required MATLAB program script and resultant plots are presented below.
Computations were performed employing Eg = 1.12 eV, kT = 0.0259 eV, ma*/mg = 1.18
and mp*/mg = 0.81 from Table 2.1, and h = 6.63 X 10 joule-sec and mg = 9.11 x
103! ke from the table of physical constants (inside back cover).
The plots are clearly consistent with Fig. 2.16 in the text. (Note that the electron
distribution scale is multiplied by 1015 while the hole distribution scale is multiplied by
106.) The distributions peak at kT/2 from the band edges graphically reconfirming the peak
positions noted in Problem 2.7.
MATLAB program script...
sproblem 2.9...Carrier Distributions
sIntialization
close
clear
Constants
BG=1.12;
mpr=0.81;
= 63e-34/ (2*pi) ;
6e-19; joules = cl*ev
1200-6 Sim 3=c2*om~3
Computation
deltak=linspace (0, 5*kT) + SdeltaE = E-Ee or Ev-E in eV
Asn0* sqrt (24m0) / (pi*2*hbar*3) ;
An-mnr* (3/2) *A;_ Ap=mpr’ (3/2) *A;
e_dist=cl*c2*Aan*exp(-EG/(4*KT) ) .*sqrt (cl*deltaE) . “exp (-deltaz/kT) ;
hodist=cl*c2*ap*exp (~3*8G/ (4*kT) ) .*sqrt (cL *deltak) . 4exp (—deltaB/KT) ;
‘Note use of cl and c2 to make distribution units number/cm*3-eV
sPlots
subplot (2,1,1), plot(e_dist,deltaE/kT); grid
xlabel (‘electron distribution (nunber/cn3-eV) ")
ylabel (* (E-Ec) /kT")
subplot (2,1,2), plot (h_dist,-deltaz/kT); grid
axis ({0,1.467,~5,0])
xlabel (‘hole distribution (number/cm*3-eV) ') +
ylabel (* (E-Ev) /kT")
2-7 (EEWKT
&
12 14
4 6 8 10
hole distibition (numberlem“3-¢¥) xto*
2.10
(a) Utilizing Eq. (2.6a), the approximate (nondegenerate) expression for the Fermi function
established in Subsection 2.4.2, Eq. (2.13a), and Eq. (2.16a), one obtains
(m,
av 2ma [r2h3) YEE, eE-ERKT
2(m@errante)” e(Ee-FevkT
(normalized dist) = SEWED
~ 2VE-Ee e-ELOMKT
Weary?
(b) A plot of the normalized electron distribution verus energy for three different
temperatures and the MATLAB program script yielding the plot are given below. From the
plot one observes that the peak energy, which occurs at kT/2, moves to progressively
higher energies with increasing T. More significantly, the distribution becomes less peaked
in nature and the height of the peak decreases with increasing temperatire.
2-8 MATLAB program script...
sproblem 2.10...Normalized Electron Distribution as a function of T
SIntialization
close
clear
SComputation and plot
k=8.617e-5;
T=[300 600 1200];
Krk. *17
E_Ec=Linspace (0,0.4)
3,
sqrt (E_Ec) / (sqrt (pi) #kT (4) * (3/2) .*exp (-B_Ec/KT (1))
)=dist
plot (& Ec,y); grid
axis({0,0.4,0,20})
xlabel (‘E-Ec (eV)'); ylabel (‘normalized distribution (1/ev)");
text (005,12, $300K", 'Color', *yellow');
text (.01, 7, "600K", Color", magenta") ;
text (.015, 3, "120K", "Color", 'cyan')
normalized distribution (1leV)
00s at ots 0
EEC(ey)
025 0a 0as 04
2-9 2M
Substituting the Eq.(2.6b) expression for gy(E) and the Eq.(2.7) expression for f{E) into
Eq.(2.8b), one obtains
1 - 1
1+e€-EOkT ~ | 4 eGr-EykT
and
Ley
mpvdmp YE, -E dE
TAP Yepagg 1 € EF EMME
Now letting
yo Bk
AT
ny = Eek
ye
Evouom —> —2
yields
p =rnbe/ Drag ery? ” nan
re yp 1+ en
Recognizing
= 1
Finn) =f eet eni-pira mera of oder 12
lp Lt etn
and defining
vy = 28427?
Qn
cone obtains
2-10
(2.9)
(2.10a)"
(2.10b)"
(2.10c)"
(2.11)
(2.12)
(2.13b) p= My 2 Fin (ty) (2.14b)
If the semiconductor is nondegenerate, such that Ep > Ey + 3K7, then ty <-3. Since
112.0 in the Fermi-Dirac integral, exp(7-tWv) 2 exp(3) for all 7). Thus one obtains
FinGw) = [ nide(rn dn = HE (GENT
0
Substituting this approximate relationship into Eq.(2.14b) finally yields
p = NyeGr Eek (2.16)
2.12
fa) electron distribution = ge(E\f(E) = (Nc/KT) e-EERUKT
where use has been made of the fact that the semiconductor is nondegenerate (E Ee
2-1 then
n= ["s (EYEE = eo
ke ET] Jp, 1+ eE-Ennr
Let
1 =F, ne = FEF: Bip 3 =
This yields
di
n =Ne [ ue
‘The integral here can be performed in closed-form.
n= Ne[n-In(+e™ )[ = Nelne + In(1+e% J]
The relationship analogous to Eqs.(2.14a) is therefore
Ne [ne + Int
If the semiconductor is nondegenerate, Mle <-3. Thus
In(l+e) = Ife" (1+e7 )]
“Ne + eM
We therefore conclude
n = Neel = Nc elte-Ee kT
since exp(Mc) << 1 and In(1-+x) =
= -Ne + In(1+eM )
ifx<< 1,
‘The above holds for a nondegenerate semiconductor and is the desired relationship
analogous to Eq.(2.16a). Actually, the relationship has turned out to be identical to
Eq.(2.16a). 213
(a) Rewriting Eqs.(2.13), one obtains
spe
= rn
ve mba
«)32,
(in
= nol
and ta
where
Using the numbers cited in the problem statement, the k-value given on the inside back
cover, and remembering to convert from eV to joules, one calculates
No = 2[ 20-109 x 10°1 (8.617 x 10°5 (300)(1.602 x 109 )]°?
(6.625 x 10347
= 2.510 x 1025/m3 = 2.510 x 10!%/em3
and therefore
Nov = (2.510 x 1019%/em3) (m*/mg)3/2
(b) Semiconductor Nc (em) Ny (cv)
Si 3.22 x 1019 1.83 x 1019
Ge 1.02 x 1019 5.42 x 1018
GaAs 4.26 x 1017 9.41 x 1018 214
(a) Referring to Fig. 2.20, one concludes:
(i) ni(Si) = ni(Ge, 300K) at T = 430K.
Gi) ni(GaAs) = nj(Ge, 300K) at T = 600K.
(b) With the differences in the effective masses neglected,
Tia. @PGAPAT _ 4 (egp-EGaVkT = @1/0.0518 — 2.49 x 108
Tin ~ ¢-EophT
2.15,
‘The MATLAB program script implementing the requested nj(Ge) vs. T computation is
reproduced below along with sample numerical results. As must be the case since the same
computational equation was used in both cases, the numerical results are found to be
consistent with the values displayed in Fig. 2.30.
MATLAB program script
‘problem 2.15...ni versus T for Ge
SInitialization
close; clear
Computation
k=8.617e-5;
475);
ni= (1.76216) .* (T.“1.5) .*exp(-0.3923/(k.*T)):
epioplay result on screen
j=Length (1) ;
Eprinté (*\n\nt(K) ni (Ge) \n")
for if=1:j,
fprinté ("8-10.£8-10.3e\n" 7 (44) ,ni (44)) 7
end)
TK) —ni(Ge)
225 9.841e+10
250 8.705e+11
275 5.25le+12
300 2.375e+13
325 8.597c+13
350 2.61 le+14
375 6.888e+14
400 1.620c+15
425 3.463415
450 6 838e+15
475 1.263e+16 2.16
@ AsT 0, n-0 and p> 0. (See the discussion in Subsection 2.5.7.)
(b) Since N >> nj, one would have
n= Np and p = n2/Np_ ...ifadonor
p= Na and n = n2/Na_...if an acceptor
We are told n = N and p = n/N. Clearly the impurity is a donor .
(c) Here we are given the minority carrier concentration, n = 105/cm3, As long as the Siis
nondegenerate, one can always write
np =
Thus
p = npn ~ G0? _
Note: From previous problems we recognize that the above carrier concentrations do
indeed correspond to a nondegenerate semiconductor.
@ Given Ep—Ej = 0.259eV. and T = 300K,
n= n,eEF-EMT = (1010) ¢0.259/0.0259 — 2.29 x 10!4/em3
p= n,eG-ENIkT ~ (1910) ¢-0.259/0.0259 _ 4.54 x 105/em3
(©) Employing the np product relationship,
np = n%2 =n?
n =V2n, = 1.414 X 10!3/em3
Next employing the charge neutrality relationship,
p-n+Np-Na = n2-n+Np = 0
Np = n/2 = njfV2 = 0.707 X 10!3/em3 217
(a) Atroom temperature in Si, nj =10!0/cm3. Thus here Np >>Na, Np >> ni and
n
Np = 10!5/cm3
p= n2/Np = 105/cem3
(b) Since Na >> Np and Na >> nj,
NA
(c) Here we must retain both Na and Np, but Np - Na >> ni.
Np-Na = 105/em3
n2(Np = Na) = 105/em3
(d) We deduce from Fig. 2.20 that, at 450K, nj(Si) = 5 x 1013/em3. Clearly, nj is
comparable to Np and we must use Eq.(2.29a).
172
ne Np « [of +02 = 121% 10!/em3
2 13)2
Se Gx y 8 497 x 105/em3
1.21 x 1014
(©) We conclude from Fig. 2.20 that, at 650K, nj = 10!6/cm3. Here nj >> Np. Thus
n = ny = 10'6/cm3
"
p = nj = 1016/cm3 218
(i) As established in the text [Eq.(2.36)],
By = FZ Ey 4 Fer indmg*ima*)
‘Taking mp*/ma* to be temperature independent and employing the values listed in
Table 2.1, one concludes
Ej displacement
part TK) kT(eV) from midgap (eV)
fc) 300 0.0259 0.0073
@ 450 0.0388 0.0109
© 650 0.0560 0.0158
Alternatively, the mp*/mg and mn*/mg versus T fit-relationships cited in Exercise 2.4 may
be used to compute the mip*/mg* ratio. One finds
Ej displacement
pat TAK) —mpt{mint KTV) idgap (eV
(a-c) 300 0.680 0.0259 —0.0075
(d) 450 0.703 0.0388 ~0.0103,
(©) 650 0.719 0.0560 —0.0139
(ii) Ep - Ej is computed using the appropriate version of Eq.(2.37) or (2.38).
4a) Bp~ Ey = kT In(Npsni) = 0.0259 n(1015/1019) = 0.298 eV
(b) Ej- Eg = kT In(Na/nj) = 0.0259 In(10'6/ 1019) = 0.358 eV
(©) Ep Ej = kT In{(Vp-Na)/nj] = 0.0259 In(10!5/10!) = 0.298 ev
(@) Ep- Ej = KT In(n/nj) = 0.0388 In(1.21 x 10!4/5 x 1013) = 0.034 eV
(e) Ep- Ej = kT In(n/nj) = 0
Gi)
0.57
0.55)
(a) and (c) () 0.55}
1015
0.53} 0.49
Ey Ey
@ (©)
2.19
(@) A sample MATLAB program that computes n, p, and Ep-Ej given T, Np, and Na is
listed below. The program incorporates the nj(T) computation given in the solution to
Exercise 2.4a.
MATLAB program script...
Scalculation vf n,p and EF-Ei (nondegenerate, fully ionized)
‘Initialization
clear; close
Specification of basic parameters
T=input ("Please input the temperature, T, in Kelvin...
nput ("Please input NA(cn-3)...NA=");
nput ("Please input ND(cm-3)...ND=");
ke8.617e-5;
Nnet=ND-NA;
'ni computation (from Exercise 2.4a solution)
Sconstants and T-range
510019;
0074; Walue was adjust to match SéG ni (300K) value
'Band Gap vs. T
ek
= 7300-4;
36:
EG=EGO-a.* (T.*2)./ (TH)
%
SEffective mass ratio (anr-mn*/m0, mpr=mp*/m0)
+028 + (6.1le-4) AT - (3.09e-7) .*7.927
1610 + (7.83e-4) 7 = (4.46e-7) 47.°23
Actual ni calculation
ni=A.* ((T./300) .*(1.5)) .* ((mnr.*mpr) .* (0.75) ) -*exp (~(EG-Eex) ./ (2
2k.)
2-18 Computation of n, p, and EF-Ei
if Nnet—=0,
elseif Nnet>0,
neNnet/2+sqrt ( (Nnet /2) *2#ni*2) :
Printout of results
format compact;
a
Pp
Bet
(b) Results obtained employing the part (a) program are tabulated below. The Problem
2.17/2.18 part (d) and (e) results are slightly different because of inaccuracies in reading
the clevated temperature values of nj from Fig. 2.20.
Part| T (K) | Na(cmm3)| Np(cm3)|_ nj (em3)_|_n(env3)_|_p (cnv3)_| Er-Ei (eV)
(a) | 300 0 1o!5__| 1.00x1010 | 1.00x10!5 |_1.00x105 | 0.298
(by | 300 | 10'6 0 | 1.00x1079 | 1.00x104 | 1.00x1016 [0.357
©) | 300 | 9x10!5 | 10!6 | 1.00x10!0 | 1.00x10!5 |_1.00x105 | 0.298
_@) | 450 0 10!4 | 4.71x1013 | 1.19x10!4 | 1.87x1013 | 0.0359
() | 650 0 1014 | 1.146x1016] 1.151x1016} 1.141x1016| 2.44104
2.20
‘There is more than one way to work this problem, with alternative approaches likely to
yield slightly different answers. ‘The most straightforward approach is recorded here.
At the onset of degeneracy
Ep = Ec-3kT n-type semiconductor
Ep = Ey+3kT ‘p-type semiconductor
and the maximum nondegenerate carrier concentrations are therefore
2-19 n= NceEr-ENT = Nee
p = Ny e&r- ERAT = yy e-3
However
n= Np n-type Si at room T
~
it
2
--p-type Si at room T
Thus
3.22 x 1019) e-3 = 1.60 x 10!8/em3
= (1.83 x 1019) e3 = 9.11 x 10!7%/cm3
Nc and Ny were computed using the expression Ne,y ~ (2.51 x 10!/em3)(rin,p"/iry)3
and the effective mass values in Table 2.1. The cited computational relationship is given in
the text below Eq.(2.14b). Also see Problem 2.13.
2.21
‘The MATLAB program listed below computes Ep — Ej vs. Na or Np up to the
nondegenerate limit (Va or Np = 1018/cm3) and yields results very similar to Fig. 2.21.
MATLAB program script...
SEF-Ei versus NA or ND (nondegenerate, fully ionized, 300K)
clear; close
Sspecification of basic parameters
kT=0.0259;
20e10;
ogspace (13,18); 8NBEND or NA
‘Computation of EF-Ei versus doping
EFAD=kT.*10g (NB. /ni) ;
EFLA=-EFAD;
SPlot out Fermi level positioning
semilogx(NB, EFiD, NB, EFiA);
axis ([1.0e13,1.0218,-0.56 0.56]);
grid; xlabel('ND or NA‘); ylabel(*EF-Ei');
text (1.0e14,0.30, ‘Donor'); "text (1.0e14,-0.30, Acceptor");
2-20 2.22
(a) Because mn* << mp" in GaAs, the density of states in the conduction band is
considerably smaller than the density of states in the valence band at a given energy
displacement from the respective band edges. To be precise, using the effective mass
values from Table 2.1,
gelEetOE) _ (cs) = (0,056) ~ o,04s
- =(2.056) = 0,
Bv(Ey-AE) OS
The required sketch is shown below.
"np
(b) Ej will lie [ABOVE] midgap. Because the density of states is smaller in the conduction
band, the Fermi level must be displaced from the middle of the band gap toward the
conduction band edge to achieve an equal number of filled states in the two bands.
(©) Employing kT = 0.0259 eV and the effective mass values from Table 2.1, we find
Ec+E, 3 te Fs,
Fey Be 5 FUT In(rn*im”) Eq.(2.36)
- Het be a 30. 0259) In(0.52/0.066)
or
+ Ey
2
Ej
+ 0.040 eV
E; lies approximately 0.04 eV above midgap in GaAs at room temperature. (Note
that the displacement from midgap is considerably larger for GaAs compared to Si. How-
ever, the room temperature displacement of 0.04 eV is still only 0.04/1.42 = 2.8% of the
total band gap.)
2-21 (A) Using the results of Problems 2.13 and 2.20, we know
Ne = 4.26 x 10!/em3
-GaAs
Ny = 9.41 x 1018/em3 at 300K
2.12 x 10!6/em3
"
Npimax = Nc e3 = (4.26 x 1017)
Naimax = Ny e-3 = (9.41 1018) e3
4.68 x 10!7/em3
Please note that n-type GaAs becomes degenerate at relatively low donor dopings. ‘This
fact is very important in the modeling of certain GaAs devices; constructive use is made of
this fact in other GaAs devices.
2.23
(a) At temperatures T > 0K there are essentially no filled levels above Ex and all levels
below Ep are filled. (The foregoing was pointed out in the Fermi function discussion.)
Moreover, as T —» 0K, freeze-out occurs and p — 0; all the acceptors are emptied of
electrons.” Now, Ef can't be below Ey because that would mean p #0. Likewise, EF
can't be above Ea because that would mean all of the acceptor are filled with electrons. We
therefore conclude Ey < Ep 0K.
For increasing T, Ep will move down from near the conduction band toward E}.
Eventually, Ef will merge with E at high temperatures.
Ec
‘\\<— Ep (retype material)
2-24 CHAPTER 3
31
(@) See Fig. 3.10(a).
) 2 Ee
Ey
e
@ 5,
Light ane
Ey
Oo
(0 See Fig. 3.15(a).
(g) See Fig. 3.15(b).
(h) See Fig. 3.15(¢)
© Ee
E
oleae YY
© e
Ee
‘Thermal
energy
Ey
° 32
(a) Given: vg = 103 cm/sec
€ = AVIL = 2V/em
Hp = vg/E = 500 cm?/V-sec
(b) @ Lattice scattering
Gi) Ionized impurity scattering
(See the Relationship to Scattering discussion in Subsection 3.1.3.)
(© Hintrinsic is higher than jUheavily doped
Reason: In intrinsic material the scattering is due exclusively to lattice scattering. In
heavily doped materials, ionized impurity scattering is also important. The more
scattering there is, the lower the mobility.
(@) Given Np1 and Nag >> ni, we know from Eqs. (3.8) that
Pe tN
nut-type wafer 1; p-type wafer 2
© dbtpNar
In most semiconductors including GaAs, fin is greater than pip for a given doping and
system temperature. Since we are given Np1 = Na2, taking the wafer temperatures to be
the same, and with fin > ftp, we conclude from the above equations that p{wafer 2) >
pwafer 1). Note that the conclusion here is consistent with Fig. 3.8(b).
(©) Dn = (kT/q)ftn = (0.0259)(1300) = 33.7 em2/sec
(O Ap << ng, 0
An << po, P
waif n-type
snif p-type
(g) R-G center
(h) Increase. Per Eq. (3.33a), tp = Lepr. Since Ny decreased after processing,
1p increased. 32
‘The MATLAB program script required to complete part (b) of Exercise 3.1 is listed below.
Except for labeling and elimination of the 10!5/em3 curves which lie almost on top of the
10!4/em3 curves, the output is identical to the solid line portions of Fig. 3.7. (A slightly
modified version of the program was in fact used to produce Fig. 3.7.)
MATLAB program script...
SMobility versus Temperature (Si)
Initialization
clear; close
T=logspace (10g10 (200) , logl0 (500))
semenu (‘Choose the carrier type', "Electrons", ‘Holes');
SFit Parameters
NDref-1.3e17; _Naref-
pnmin=92; ppmin=54.3;
HpO=406.9;
ap=0.88;
TNref=2.4; Tymin=-0.57;
2.33; Typ0=-2.23;
Ta=-0.146;
‘Mobility Calculation
for i=14:18,
0.44;
if s=1,
SBlectrons
NDrefT=NDref* (1. /300) .“TNref;
pnmint=pnmin,* (T./300) .~THmin;
qn0T=n0.* (1. /300) .~Tjn0;
ni. (T.. /300) “Paz
fin=pinminT+pnOT. / (1+ (N. /NDrefT) .“anT) ;
35e17;
else
sHoles
NArefT=NAref* (T./300) .~TNref;
Hpnin?=ppmin.* (1. /300) .“Tpimii
bpOT=up0.* (Tr. /300) . “THpO;
apT=ap.* (T./300) Ta;
Hp=ppmint4ppOT. / (1+ (N. /NArefT) apt) ;
yup:
end
SPlotting results
if i=14,
3-3 if s=1,
SElectrons
loglog (ty); grid:
axis([1e2, 163, 1e2,1e4])
xlabel (*T (K)");
ylabel ("Electron mobility (cm2/V-sec) *) ;
‘text (220, 3300, 'ND=1.0e14!
text (220,230, 'ND=1.0e18") ;
‘text (600, 6500, ‘SILICON') ;
else
SHoles
loglog(t,y); grid:
axis ({1e2,1e3, 162, 1e4])
xlabel (*T (K)");
ylabel ("Hole mobility (cm2/V-sec) ");
text (205,1150, 'NA=1.0e14") ;
text (205,125, 'NA=1.0e18") ;
text (600, 6500, SILICON") >
end
elseif i>=15,
hold on
Loglog (ty y):
else
end
end
34
(@) (Optional reading assignment.)
(b) MATLAB program script ...
Mobility vs. T(K) Data
‘%Determining the power-dependence exponent
clear; close
Input data and take log of data
'50:10:290;
yn=(6757 $910 $216 4619 4209 3743 3306 2978 2675 2415 2185 ...
1985 1805 1646 1501];
Perform least-squares fit to data
c=polyfit (x,¥/1);
azc(2)z
(1) + reit=121 350,
yEitqexp (a) .*T£it.*(-b)
SPlot data, draw fit line, note fit value
loglog(T, pn, 'o',TEit, yfit); grid
axis([le2,1¢3,1¢3,1¢4]) :
xlabel("T (K)'); ylabel('Electron mobility (cm2/V-sec)');
text (200, 4200, [*T*(-", num2str (b) ,")"])7
text (510, 6300, "ND < 10°14/om3");
text (510, 7300, *Si")
10
IND
