ZTX650 ZTX651 ZTX650 ZTX651: NPN Silicon Planar Medium Power Transistors
ZTX650 ZTX651 ZTX650 ZTX651: NPN Silicon Planar Medium Power Transistors
ZTX650 ZTX651 ZTX650 ZTX651: NPN Silicon Planar Medium Power Transistors
Thermal Resistance:Junction to Ambient1 Rth(j-amb)1 175 °C/W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
Junction to Ambient2 Rth(j-amb)2 116 °C/W ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
Junction to Case Rth(j-case) 70 °C/W
ZTX650 ZTX651
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. PARAMETER SYMBOL UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
D=1 (D.C.)
3-220 3-219
ZTX650 NPN SILICON PLANAR ZTX650
ZTX651 MEDIUM POWER TRANSISTORS ZTX651
ISSUE 2 JULY 94
FEATURES
ZTX650 ZTX651
PARAMETER SYMBOL UNIT CONDITIONS. * 60 Volt VCEO
MIN. TYP. MAX. MIN. TYP. MAX. * 2 Amp continuous current
* Low saturation voltage
* Ptot=1 Watt
Transition fT 140 175 140 175 MHz IC=100mA, VCE=5V C
Frequency f=100MHz B
E
Thermal Resistance:Junction to Ambient1 Rth(j-amb)1 175 °C/W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
Junction to Ambient2 Rth(j-amb)2 116 °C/W ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
Junction to Case Rth(j-case) 70 °C/W
ZTX650 ZTX651
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. PARAMETER SYMBOL UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
D=1 (D.C.)
3-220 3-219
ZTX650
ZTX651
TYPICAL CHARACTERISTICS
0.6
0.5
225
0.4
VCE(sat) - (Volts)
IC/IB=10
175
hFE - Gain
0.3 VCE=2V
125
0.2
0.1 75
0
0.0001 0.001 0.01 0.1 1 10 0
0.01 0.1 1 10
VCE(sat) v IC hFE v IC
1.4
1.2
1.2
1.0
VBE(sat) - (Volts)
VBE - (Volts)
1.0 VCE=2V
IC/IB=10
0.8
0.8
0.6
0.6
0.4
0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10
tr IB1=IB2=IC/10
tf ts
ns ns
140 1400
1 120 1200
ts
Switching time
100 1000
D.C. td
80 800
1s
100ms
10ms 60 600
tf
0.1 1.0ms
400
40
100µs tr
20 200
0 0
ZTX650
ZTX650/51-5 0.01 0.1 1
ZTX651
0.01
0.1 1 10 100
VCE - Collector Voltage (Volts) IC - Collector Current (Amps)
3-221