Philips RF Manual 4th Edition
Philips RF Manual 4th Edition
Philips RF Manual 4th Edition
RF Manual product & design manual for RF small signal discretes Page: 1
Philips
RF Manual
product & design manual for
RF small signal discretes
4 edition
th
March 2004
http://www.philips.semiconductors.com/markets/mms/products/
discretes/documentation/rf_manual
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The previous 2 editions of Philips RF Manual (2nd and 3rd together) have been
downloaded more than 200.000 times from the Philips Semiconductors website.
We can truly say that Philips RF Manual is THE LEADING document in the RF
market.
Many engineers, developers and purchasers use our RF Manual as their main source of
information for building applications and to make the right decisions.
A large subscribers database has been built to allow sending all of you our most recent issue.
You can download the RF Manual from many Philips websites as well as from websites of the
most important distributors.
The RF Manual covers a broad range of material and many aspects about RF small signal
systems. Starting at the RF basics, it covers many subjects including applications, our
product portfolio, cross-references, packaging, etc.
We keep our RF Manual as a dynamic source of information. We have committed to updating
the document twice a year to allow you to be informed on important developments for your
applications.
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Contents
Application notes:
Appendix D: Application of RF Switch BF1107/8 Mosfet
Appendix E: BGA2715-17 gen. purpose wideband ampl., 50 Ohm Gain Blocks
Appendix F: BGA6x89 gen. purpose medium power ampl., 50 Ohm Gain Blocks
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1 What’s New
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New MMIC's
Product Type Application/description RFS More info:
BGA2715
General purpose wideband 50 Ohm Gain Blocks for
Chapter
BGA2716 LNB IF, Cable systems, Satellite distribution amplifiers, Q1 2004
4.2
BGA2717 metering systems .
BGM1013
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Horizontal IF H low
antenna LNA AMP
IF IF out1
low AMP (subscriber 1)
IF V low
AMP
4x2
switch
IF H high
AMP
IF IF out 2
high
AMP (subscriber 2)
Vertical IF V high
antenna LNA AMP
H low
IF IF out3
AMP (subscriber 3)
V low
4x2
switch
H high
IF IF out 4
AMP (subscriber 4)
V high
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SPDT SMA
X1 BGA6589 GND
50 Ω X6
ANT
PA
tclosed = 0
0 V/2.25 V LP1 IC2 X3
Q3
3 mA TX
D4 4.7 V/83 mA
TX
D5
SPDT Q1 D7
BOARD PAVCC
X5
PROTECTION 9 V/89 mA
PActrl
X8
0 V/3 to 5 V
SPDT
X7
0 V/3 to 5 V
mse240
OSCILLATOR
Varicaps MOSFET
SOD323 SOD523 5V 9V 2-in -1.5 V BGA2717
VHF - low BB152 BB182 BF904, BF904A BF1100 BF1102
VHF - high BB153 BB178 BF909, BF909A BF1109 BF1102R
BB157 BB187 BF1201, BF1201A BF1203
UHF BB149A BB179 BF1105 BF1204
BF1211, BF1211R
BF1211WR,
BF1212, BF1212R
BF1212WR,
BF1205, BF1206
msd455
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Pin diodes
Limits RD (Ω) typ @ Cd (pF) type @
Type Package Conf
Vr(V) If(mA) 0.5mA 1 mA 10 mA 0V 1V 20V
BAP142L SOD882 S 60 60 5.5 3.6 1.5 0.40 0.30 0.2 @ 5V
BAP50-02 SOD523 S 50 50 25 14 3 0.4 0.3 0.22 @ 5V
BAP50-03 SOD323 S 50 50 25 14 3 0.4 0.3 0.2 @ 5V
BAP50-04 SOT23 SS 50 50 25 14 3 0.45 0.35 0.3 @ 5V
BAP50-04W SOT323 SS 50 50 25 14 3 0.45 0.35 0.3 @ 5V
BAP50-05 SOT23 CC 50 50 25 14 3 0.45 0.35 0.3 @ 5V
BAP50-05W SOT323 CC 50 50 25 14 3 0.45 0.35 0.3 @ 5V
BAP51L SOD882 S 60 60 5.5 3.6 1.5 0.4 0.3 0.2 @ 5V
BAP51-02 SOD523 S 60 60 5.5 3.6 1.5 0.4 0.3 0.2 @ 5V
BAP51-03 SOD323 S 60 60 5.5 3.6 1.5 0.4 0.3 0.2 @ 5V
BAP51-05W SOT323 CC 60 60 5.5 3.6 1.5 0.4 0.3 0.2 @ 5V
BAP51-06W SOT323 CA 50 50 5.5 3.6 15 0.4 0.3 0.2 @ 5V
BAP63L SOD882 S 50 100 2.5 1.95 1.17 0.36 0.32 0.25
BAP63-02 SOD523 S 50 100 2.5 1.95 1.17 0.36 0.32 0.25
BAP63-03 SOD323 S 50 100 2.5 1.95 1.17 0.4 0.35 0.27
BAP63-05W SOT323 CC 50 100 2.5 1.95 1.17 0.4 0.35 0.3
BAP64-02 SOD523 S 200 175 20 10 2 0.52 0.37 0.23
BAP64-03 SOD323 S 200 175 20 10 2 0.52 0.37 0.23
BAP64-04 SOT23 SS 200 175 20 10 2 0.52 0.37 0.23
BAP64-04W SOT323 SS 200 100 20 10 2 0.52 0.37 0.23
BAP64-05 SOT23 CC 200 175 20 10 2 0.52 0.37 0.23
BAP64-05W SOT323 CC 200 100 20 10 2 0.52 0.37 0.23
BAP64-06 SOT23 CA 200 175 20 10 2 0.52 0.37 0.23
BAP64-06W SOT323 S 100 100 20 10 2 0.52 0.37 0.23
BAP65-02 SOD523 S 30 100 1 0.56 0.65 0.6 0.375
BAP65-03 SOD323 S 30 100 1 0.56 0.65 0.6 0.375
BAP65-05 SOT23 CC 30 100 1 0.56 0.65 0.6 0.375
BAP65-05W SOT323 CC 30 100 1 0.56 0.65 0.6 0.375
BAP70-02 SOD523 S 70 100 70 27 4.5 0.29 0.2 0.125
BAP70-03 SOD323 S 70 100 70 27 4.5 0.29 0.2 0.125
BAP70-04W SOD324 S 70 100 70 27 4.5 0.29 0.2 0.125
BAP70-05 SOD325 S 70 100 70 27 4.5 0.29 0.2 0.125
BAP1321L SOD882 S 60 100 3.4 2.4 1.2 0.4 0.35 0.25
BAP1321-02 SOD523 S 60 100 3.4 2.4 1.2 0.4 0.35 0.25
BAP1321-03 SOD323 S 60 100 3.4 2.4 1.2 0.4 0.35 0.25
BAP1321-04 SOT23 SS 60 100 3.4 2.4 1.2 0.4 0.35 0.25
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3
Limits @ 900MHz @1800 MHz Gain (db) @ @
Type Package Vs Is Ptot NF Gain IIP 3 NF Gain IIP 3 100 1 2.6 Vs Is
3.0 GHz
(V) (mA) (mW) (dB) (dB) (dBm) (dB) (dB) (dBm) MHz GHz GHz (V) (mA)
1) 1)
Low Noise BGA2001 SOT343R 4.5 30 135 1.3 22 -7.4 1.3 19.5 -4.5 20 17.1 11.6 10.7 2.5 4
1) 1) 2)
Wideband BGA2003 SOT343R 4.5 30 135 1.8 24 -6.5 1.8 16 -4.8 26 18.6 11.1 10.1 2.5 10
4)
Amplifiers BGA2004 SOT363 3.3 15 50 1.4 18 -5 2.7 6
3)
BGA2011 SOT363 4.5 30 135 1.5 19 10 - - - 24 14.8 8 6.5 3 15
3)
BGA2012 SOT363 4.5 15 70 - - - 1.7 16 10 22 18.2 11.6 10.5 3 7
2)
BGU2003 SOT343R 4.5 30 135 1 23 -6 1.1 18 -5 25 19 12.3 11.6 2.5 10
2
Notes : 1. MSG 2. Adjustable bias 3. |S21| 4. Switched LNA with internal match for 1.8 GHz. Objective Data
3 1
General Limits @ 900MHz @1800 MHz Gain fu @
3 3
Purpose Type Package Vs Is Ptot NF Gain OIP3 P1dB NF Gain NF P1dB 2.5 @-3dB Vs Is
Med.Power (V) (mA) (mW) (dB) (dB) (dBm) (dBm) (dB) (dB) (dB) (dBm) GHz (MHz) (V) (mA)
Ampl., 50 BGA6289 SOT89 6 120 480 3.8 15 31 17 4.1 13 4.1 15 12 4000 3.8 83
ohm gain BGA6489 SOT89 6 120 480 3.1 20 33 20 3.3 16 3.3 17 15 4000 5.1 83
blocks BGA6589 SOT89 6 120 480 3 22 33 21 3.3 17 3.3 20 15 4000 4.8 83
Notes:1 Determined by return Loss(>10dB) 3. Gain = |S21|2
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Rd @ IF Cd @ VR
Type Package
VR (V) IF (mA) and f and f
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Primary value propositions of naked- over packaged die are lower parasitics and real estate
reduction.
• Electrical performance: The lower inductance & capacitance of bare die is vital in RF
applications. Signal propagation & ground distributions are also improved.
• Size: Usage of bare dies provide designers with opportunities to incorporate expanding
functions into reduced spaces.
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5 X-references
Alphabetical order on manufacturer type
Manufacturer Manufacturer Type closest Philips Type
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6 Packaging
SOT88x package platform
Maximum functionality, minimum space
Philips’ continues to address the trend for smaller, more energy-efficient solutions with the
launch of its SOT88x package platform. A milestone in package miniaturisation, the ultra-
small SOT88x brings unique space saving and power dissipation capabilities to a wide range
of our small-signal, RF and power discretes.
Key features
• Dimensions: 1.0 x 0.6 x 0.5 mm
• Footprint only 14% of SOT23 or SOT346 (SC-59)
• Power dissipation up to 250 mW
• SOT883 compatible with JEITA standard SC-101
• Lead-free, ‘green’ plastic
Key benefits
• Reduces board space requirements
• Power dissipation comparable to SOT23 or SOT346 (SC-59)
• Very efficient packing: up to 10000 products on standard 180 mm reel
• leading to lower inventory and assembly costs
• Environmentally friendly
Key applications
• Cordless and mobile phones
• Digital cameras and camcorders
• PDAs and notebook PCs
• Optical disc drives
• DC/DC converters
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Cost-effective and flexible, Philips’ new SOT88x surface mount, ultrasmall plastic package
platform delivers compact devices with excellent power dissipation. Its unique benefits are
utilized by a wide variety of our discrete semiconductors to form a comprehensive portfolio
covering small-signal, RF and power product ranges. Ideal for any market, SOT88x devices
are excellent solutions where power dissipation and limited space are critical design factors;
helping designers maximize functionality while minimizing space, particularly in hand-held,
portable and battery-operated applications.
SOT88x packages are built in a Quad Flat Non-leaded technology (QFN), a well-known and
proven technology for ICs. In terms of power dissipation, the leadless layout means they offer
efficiency comparable to SOT23.The SOT88x platform is also environmentally friendly, with
pure tin plating, green plastic and the highly efficient packing method – already standard for
passive components – meeting all environmental protection targets.
Initially released in two and three solder pad options (SOD882 and SOT883 / SC-101
respectively), the SOT88x platform is based on a leadframe encapsulated by a plastic body
compatible with existing pick and-place equipment and soldering methods. This superior, cost
effective design gives Philips the opportunity to introduce sophisticated, multi-pin devices
incorporating four, six or even more solder pads.
All SOD882 and SOT883 products are available in papertape and 180 mm standard reels
exclusively. Very thin papertape (h = 0.6 mm) combined with a 2 mm product pitch enables
Philips to offer 10000 devices on a single 180 mm standard reel, minimizing pick-and-place
handling effort, reducing warehouse space and creating less waste material.
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tape offers a state-of-the-art packing method with a superb device per reel ratio – better than
with any small-signal packages – which is also environmentally friendly.
The large number of devices per reel minimizes storage space and reduces waste, while
optimizing the changeover times at pick-and-place machines. We make exclusive use of a
‘flamed-off’ quality tape. This ensures no loose paper particles from the cavity stamping
process of the carrier tape contaminate your working environment – any particles are burned
off before the tape is delivered into production at Philips.
Surface resistively of paper tape varies with the relative humidity of the working environment
(following an inverse relationship). By enclosing the carrier tape with top and bottom anti-
static tape layers, there is no risk to the enclosed devices from possible ESD failures resulting
from humidity variations. ESD safety has been checked with very sensitive devices at
extremely low relative humidities (16 %) and the requirements were fulfilled.
PIN diodes
Type Conf Limits RD (ohm) typ @ CD (pF) type @
VR(V) IF(mA) 0.5 mA 1 mA 10 mA 0V 1V 20 V
BAP51L S 60 60 5.5 3.6 1.5 0.4 0.3 0.2 @ 5V
BAP1321L S 60 100 3.4 2.4 1.2 0.4 0.35 0.25
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7 Promotion Material
For samples or promotion materials below, please contact your Philips Account Manager or
contact person in your region, see contacts & references.
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Sample kits:
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Europe: Americas:
Editor:
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APPENDIX
In separate appendix-file !
Content:
Application notes:
Appendix D: Application of RF Switch BF1107/8 Mosfet
Appendix E: BGA2715-17 general purpose wideband amplifier,50 Ohm Gain Blocks
Appendix F: BGA6x89 general purpose medium power amplifier,50 Ohm Gain Blocks