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Chapter 1 - Introduction
pi := 4 atan( 1 ) pi = 3.142
Problem 1.1
−3
Ip := 100 To := 8.3⋅ 10 −3
T := 16.67 ⋅ 10

Ip
IRMS := IRMS = 70.711
2

Ip
IAVG := 2 ⋅ IAVG = 63.662
pi

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Problem 1.2

−3
Ip := 100 k := 0.5 T := 16.67 ⋅ 10

k
IRMS := Ip ⋅ IRMS = 50
2

Ip
IAVG := IAVG = 31.831
pi

t1 := 0 t1 = 0

T −3
t2 := t 2 = 8.335 × 10
2
−3
To := k ⋅ T To = 8.335 × 10

t1
θ 1 := 2 ⋅ pi⋅ θ1 = 0
T
t2
θ 2 := 2 ⋅ pi⋅ θ 2 = 3.142
T
θ
Ip ⌠ 2
IAVG := ⋅ ⎮ sin( x ) dx
2 ⋅ pi ⌡θ IAVG = 31.831
1

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Chapter 1- Introduction
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Problem 1.3
−3
Ip := 100 k := 0.8 T := 16.67 ⋅ 10
−3
t 1 := T⋅ ( 1 − k ) t1 = 3.334 × 10

T −3
t 2 := t2 = 8.335 × 10
2

To := k ⋅ T To = 0.013

sin⎡To ⋅ ( 1 − k )⎤ cos[ pi⋅ ( 1 − k ) ]

IRMS := Ip ⋅
k
+
⎣ ⎦ IRMS = 63.273
2 2 ⋅ pi
t1
θ 1 := 2 ⋅ pi⋅ θ 1 = 1.257
T
t2
θ 2 := 2 ⋅ pi⋅ θ 2 = 3.142
T
θ
Ip ⌠ 2
IAVG := ⋅ ⎮ sin( x ) dx
2 ⋅ pi ⌡θ IAVG = 20.834
1

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Problem 1.4

−3
Ip := 100 k := 0.4 T := 1 ⋅ 10

−4
To := k ⋅ T To = 4 × 10

IRMS := Ip ⋅ k
IRMS = 63.246

IAVG := Ip ⋅ k
IAVG = 40

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Problem 1.5
−3
Ia := 80 Ib := 100 k := 0.4 T := 1 ⋅ 10

−4
To := k ⋅ T To = 4 × 10

Chapter 1- Introduction
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⎛ I 2 + I ⋅ I + I 2⎞
IRMS := k ⋅
⎝b a b a ⎠
IRMS = 57.038
3

1
2
(
⋅ k ⋅ T⋅ Ib − Ia )
IAVG := k ⋅ Ia +
T IAVG = 36

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Problem 1.6

From Fig. 1.10e,

3
Solving it,

k = 0.75 = 75%

.
0.75

T = 2ms

Chapter 1- Introduction
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&KDpter 2 –Diodes Circuits

Prob 2.1
−6 6
trr := 5⋅ 10 di_dt := 80⋅ 10

( a) Eq. (2.10)
2
QRR := 0.5⋅ di_dt⋅ trr 6 3
QRR⋅ 10 = 1 × 10 μC

( b) Eq. (2-11)
IRR := 2⋅ QRR⋅ di_dt IRR = 400 A

 
Prob 2.2
  Q 10000μC and I 4000A  

di
Q 0.5 t  
dt

di
I 2Q  
dt

Solving both equations, 

We get, t 5μs  and   800A/μs 

Chapter 2-Diodes Circuits

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Prob 2.3
−6
trr := 5⋅ 10 SF := 0.5
trr
ta := −6
1 + SF ta = 3.333 × 10
−6
tb := SF⋅ ta tb = 1.667 × 10

1
m := ⋅t ⋅t − 12
2 a rr m = 8.333 × 10

QRR ( x) := m⋅ x

Plot of the charge storage verus di/dt

0.008
Charge storage

0.006
QRR ( x)

0.004

0.002

0
2 .10 4 .10 6 .10 8 .10 1 .10
8 8 8 8 9
x
di/dt

Chapter 2-Diodes Circuits

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IRR ( x) := ta⋅ x

Plot of the charge storage verus di/dt

4000

3000
Charge storage

IRR ( x)
2000

1000

0
1 .10 2 .10 3 .10 4 .10 5 .10 6 .10 7 .10 8 .10 9 .10 1 .10
8 8 8 8 8 8 8 8 8 9
x
di/dt

−3
Prob 2.5 VT := 25.8⋅ 10
VD2 := 1.6 VD1 := 1.2 ID2 := 1500 ID1 := 100

Using Eq. (2-3),

VD2 − VD1
( a) η :=
η = 5.725
⎛ ID2 ⎞
VT⋅ ln ⎜ ⎟
ID1
⎝ ⎠
VD1
( b) x :=
η ⋅ VT x = 8.124

Using Eq. (2-3), ID1

IS := IS = 0.03
x
⎛ ID1 ⎞ e
VT⋅ η ⋅ ln ⎜ ⎟ = 1.2
IS
⎝ ⎠

Chapter 2-Diodes Circuits

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Prob 2-7

VD1 := 2200 VD2 := 2200 R1 := 100⋅ 10

3

−3 −3
IS1 := 20⋅ 10 IS2 := 35⋅ 10

( a)
VD1
IR1 := IR1 = 0.022
R1
Using Eq. (2-13),
( b) IR2 := IS1 + IR1 − IS2 −3
IR2 = 7 × 10

VD2
5
R2 := R2 = 3.143 × 10
IR2

Prob 2.11
IT := 300 VD := 2.8

IT
I1 := I1 = 150
2
I2 := I1 I2 = 150

VD1 := 1.4 VD2 := 2.3

VD − VD1
−3
R1 := R1 = 9.333 × 10
I1

VD − VD2 −3
R2 := R2 = 3.333 × 10
I2

IT
I1 :=
2

Chapter 2-Diodes Circuits

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Prob 2-13

R R 50kΩ, 10 , 5225  , 4775 

From Eq. (2-12),

or
5225 4775
50000 50000

10000

10000

50000 50000 10000

Solving for and gives 20 and 30 .

Prob 2-15
Ip := 500 −6
f := 500 t1 := 100⋅ 10

1
T := 3
f T⋅ 10 = 2
t
Ip ⌠ 1
IAVG := ⋅ ⎮ sin ( 2⋅ π ⋅ f ⋅ t) dt IAVG = 3.895
T ⌡0

1 t
1 ⌠
⋅ ⎮ sin ( 2⋅ π ⋅ f ⋅ t) dt
2
IRMS := Ip IRMS = 20.08
T ⌡0

Ipeak := Ip Ipeak = 500

Chapter 2-Diodes Circuits

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Prob 2-16
−6
IRMS := 120 f := 500 t1 := 100⋅ 10

1
T := 3
f T⋅ 10 = 2
IRMS 3
Ip := Ip = 2.988 × 10
t
1
1 ⌠
⋅ ⎮ sin ( 2⋅ π ⋅ f ⋅ t) dt
2
T ⌡0

1 t
1 ⌠
⋅ ⎮ ( sin ( 2⋅ π ⋅ f ⋅ t) ) dt
2
IRMS := Ip IRMS = 120
T ⌡0

t
Ip ⌠ 1
IAVG := ⋅ ⎮ sin ( 2⋅ π ⋅ f ⋅ t) dt IAVG = 23.276
T ⌡0

Prob 2-17
−6
IAVG := 100 f := 500 t1 := 100⋅ 10

1
T := 3
T⋅ 10 = 2
f
IAVG
Ip :=
⎛ ⌠ t1 ⎞ Ip = 1.284 × 10
4
⎜1 ⎟
⋅ ⎮ sin ( 2⋅ π ⋅ f ⋅ t) dt
⎜T ⌡ ⎟
⎝ 0 ⎠
t
Ip ⌠ 1
IAVG := ⋅ ⎮ sin ( 2⋅ π ⋅ f ⋅ t) dt
T ⌡0 IAVG = 100

1 t
1 ⌠
⋅ ⎮ ( sin ( 2⋅ π ⋅ f ⋅ t) ) dt
2
IRMS := Ip
T ⌡0 IRMS = 515.55

Chapter 2-Diodes Circuits

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Prob 2-18
−6 −6 −6 −6
t1 := 100⋅ 10 t2 := 200⋅ 10 t3 := 400⋅ 10 t4 := 800⋅ 10
−3
t5 := 1⋅ 10 f := 250 Ia := 150 Ib := 100 Ip := 300

t2 − t1 ( )
( a) I
AVG := I ⋅ f
a 3 b⋅ t + I ⋅ f ⋅ t −
5 4t + 2 ⋅ I −
p aI ⋅(f ⋅
π
) ( )
IAVG = 22.387
( b) ( t2 − t1 )
(
Ir1 := Ip − Ia ⋅ f ⋅ ) 2 Ir1 = 16.771

Ir2 := Ia⋅ f ⋅ t3 Ir2 = 47.434

Ir3 := Ib⋅ f ⋅ t5 − t4 ( ) Ir3 = 22.361

2 2 2
Irms := Ir1 + Ir2 + Ir3 Irms = 55.057

Prob 2-19
−6 −6 −6 −6
t1 := 100⋅ 10 t2 := 200⋅ 10 t3 := 400⋅ 10 t4 := 800⋅ 10
−3
t5 := 1⋅ 10 f := 250 Ia := 150 Ib := 100 Ip := 150

t2 − t1 ( )
( a) I
AVG := I ⋅ f
a 3 b⋅ t + I ⋅ f ⋅ t −
5 4t + 2 ⋅ I −
p aI (
⋅ f ⋅
π
) ( ) IAVG = 20

( b) ( t2 − t1)
(
Ir1 := Ip − Ia ⋅ ) f⋅
2 Ir1 = 0

Ir2 := Ia⋅ f ⋅ t3 Ir2 = 47.434

(
Ir3 := Ib⋅ f ⋅ t5 − t4 ) Ir3 = 22.361

2 2 2
Irms := Ir1 + Ir2 + Ir3 Irms = 52.44

Chapter 2-Diodes Circuits

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Prob 2-20
−6 −6 −6 −6
t1 := 100⋅ 10 t2 := 200⋅ 10 t3 := 400⋅ 10 t4 := 800⋅ 10
−3
t5 := 1⋅ 10 f := 250 Ia := 150 Ib := 100 Ip := 150

Irms := 180

Ir2 := Ia⋅ f ⋅ t3 Ir2 = 47.434

Ir3 := Ib⋅ f ⋅ t5 − t4( ) Ir3 = 22.361

2 2 2
Ir1 := Irms − Ir2 − Ir3 Ir1 = 172.192

( a) Ir1
3
Ip := + Ia Ip = 1.69 × 10

f⋅
( t2 − t1)
2

( t2 − t1)
(
Ir1 := Ip − Ia ⋅ f ⋅ ) 2 Ir1 = 172.192

2 2 2
Irms := Ir1 + Ir2 + Ir3 Irms = 180

t2 − t1 ( )
( b) I
(
AVG := Ia⋅ f ⋅ t3 + Ib⋅ f ⋅ t5 − t4 + 2⋅ Ip − Ia ⋅ f ⋅ ) π
( )
IAVG = 44.512

Chapter 2-Diodes Circuits

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Prob 2-21

t 100μs,  t 200μs,  t 400μs,  t 800μs,  t 1ms, f 250Hz, I 150A, I

100A & I 30A
(a)
2 /

30 15 5   2 150 250 200 100 10 /

Solving for ,
778
(b) /2 

778 150 250 200 100 10 /2 70.21

150 250 400 10 47.43

100 250 1000 800 10 22.36

The rms current is √70.21 47.43 22.36 87.36  

Chapter 2-Diodes Circuits

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Prob 2-22 −6 −6
VS := 220 R := 4.7 C := 10⋅ 10 t := 2⋅ 10
−5
τ := R⋅ C τ = 4.7 × 10
Using Eq. (2-20),
VS
( a) Ip :=
R Ip = 46.809

( b) VO := VS
2
W := 0.5⋅ C⋅ VO W = 0.242

Using Eq. (2-21),

⎛ − t⎞
⎜ τ ⎟
( c) Vc := VS⋅ ⎝ 1 − e ⎠ Vc = 9.165

Prob 2-24 −3
VS := 110 R := 4.7 L := 6.5⋅ 10

R
τ := τ = 723.077
L
Using Eq. (2-25),
VS
( a) ID :=
R ID = 23.404

( b) IO := ID
2
W := 0.5⋅ L⋅ IO W = 1.78

Using Eq. (2-27),

VS 4
( c) di := di = 1.692 × 10
L

Chapter 2-Diodes Circuits

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Prob 2-25 −3
VS := 220 R := 4.7 L := 6.5⋅ 10

R
τ := τ = 723.077
L
Using Eq. (2-25),

VS
( a) ID :=
R ID = 46.809

( b) IO := ID
2
W := 0.5⋅ L⋅ IO W = 7.121

Using Eq. (2-27),

VS
4
( c) di := di = 3.385 × 10
L

Prob 2-29
−6 −6
VS := 110 C := 10⋅ 10 L := 50⋅ 10
Using Eq. (2-32),

C
( a) Ip := VS⋅ Ip = 49.193
L

−5
( b) t1 := π ⋅ L⋅ C t1 = 7.025 × 10

Using Eq. (2-35),

( c) VC := 2⋅ VS VC = 220

Chapter 2-Diodes Circuits

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Example 2.31
−3 −6 Vs := 220
L := 4⋅ 10 C := 0.05⋅ 10

( a) R
R := 160 α := 4
2⋅ L α = 2 × 10

Using Eq. (2-41),

1 4
ω o := ω o = 7.071 × 10
L⋅ C
2 2 4
ω r := ωo − α ω r = 6.782 × 10

Vs
A2 :=
ω r⋅ L A2 = 0.811

π 6
( b) t1 := t1⋅ 10 = 46.32 μs
ωr

vc ( t) := e
− α⋅t
⋅ A2⋅ sin ω r⋅ t( )
Probl 2-32
−3 −6 Vs := 220
L := 2⋅ 10 C := 0.5⋅ 10

( a) R
R := 160 α := 4
2⋅ L α = 4 × 10
1
ω o := 4
ω o = 3.162 × 10 α > ωo
L⋅ C

2 2
s1 := −α + α − ωo 4
s1 = −1.551 × 10
2 2
s2 := −α − α − ωo 4
s2 = −6.449 × 10
at t = 0 i := 0 0 ≡ A1 + A2
Vs
at t = 0 di := 0 ≡ A1⋅ s1 + A2⋅ s2
L

Chapter 2-Diodes Circuits

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