BC237B

Amplifier Transistors
NPN Silicon

Features
• Pb−Free Packages are Available* http://onsemi.com

COLLECTOR
1
MAXIMUM RATINGS
Rating Symbol Value Unit 2
Collector −Emitter Voltage VCEO 45 Vdc BASE

Collector −Emitter Voltage VCES 50 Vdc

3
Collector −Emitter Voltage VEBO 6.0 Vdc EMITTER
Collector Current − Continuous IC 100 mAdc
Total Power Dissipation @ TA = 25°C PD 350 mW
Derate above TA = 25°C 2.8 mW/°C
TO−92
Total Power Dissipation @ TA = 25°C PD 1.0 W CASE 29
Derate above TA = 25°C 8.0 mW/°C STYLE 17
Operating and Storage Temperature TJ, Tstg −55 to +150 °C
Range 12 1
2
3 3
THERMAL CHARACTERISTICS
STRAIGHT LEAD BENT LEAD
Characteristic Symbol Max Unit BULK PACK TAPE & REEL
AMMO PACK
Thermal Resistance, Junction−to−Ambient RqJA 357 °C/W
Thermal Resistance, Junction−to−Case RqJC 125 °C/W MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the BC23
Recommended Operating Conditions may affect device reliability. 7B
AYWW G
G

A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)

ORDERING INFORMATION
Device Package Shipping†
BC237B TO−92 5000 Units / Bulk

BC237BG TO−92 5000 Units / Bulk

(Pb−Free)

BC237BRL1G TO−92 2000 / Tape & Reel

(Pb−Free)

*For additional information on our Pb−Free strategy and soldering details, please †For information on tape and reel specifications,
download the ON Semiconductor Soldering and Mounting Techniques including part orientation and tape sizes, please
Reference Manual, SOLDERRM/D. refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2007 1 Publication Order Number:

March, 2007 − Rev. 5 BC237/D
 BC237B

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage V(BR)CEO V
(IC = 2.0 mA, IB = 0) 45 − −

Emitter −Base Breakdown Voltage V(BR)EBO V

(IE = 100 mA, IC = 0) 6.0 − −

Collector Cutoff Current ICES

(VCE = 50 V, VBE = 0) − 0.2 15 nA
(VCE = 50 V, VBE = 0) TA = 125°C − 0.2 4.0 mA
ON CHARACTERISTICS
DC Current Gain hFE −
(IC = 10 mA, VCE = 5.0 V) − 150 −

(IC = 2.0 mA, VCE = 5.0 V) 200 290 460

(IC = 100 mA, VCE = 5.0 V) − 180 −

Collector −Emitter On Voltage VCE(sat) V

(IC = 10 mA, IB = 0.5 mA) − 0.07 0.2
(IC = 100 mA, IB = 5.0 mA) − 0.2 0.6
Base −Emitter Saturation Voltage VBE(sat) V
(IC = 10 mA, IB = 0.5 mA) − 0.6 0.83
(IC = 100 mA, IB = 5.0 mA) − − 1.05
Base−Emitter On Voltage VBE(on) V
(IC = 100 mA, VCE = 5.0 V) − 0.5 −
(IC = 2.0 mA, VCE = 5.0 V) 0.55 0.62 0.7
(IC = 100 mA, VCE = 5.0 V) − 0.83 −
DYNAMIC CHARACTERISTICS
Current −Gain — Bandwidth Product fT MHz
(IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz) − 100 −
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz) 150 200 −
Collector−Base Capacitance Cobo − − 4.5 pF
(VCB = 10 V, IC = 0, f = 1.0 MHz)

Emitter−Base Capacitance Cibo − 8.0 − pF

(VEB = 0.5 V, IC = 0, f = 1.0 MHz)

Noise Figure NF dB
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kW, f = 1.0 kHz, Df = 200 Hz) − 2.0 10

http://onsemi.com
2
 BC237B

2.0 1.0
VCE = 10 V TA = 25°C
hFE, NORMALIZED DC CURRENT GAIN
1.5 0.9
TA = 25°C
0.8
VBE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)
1.0 0.7
VBE(on) @ VCE = 10 V
0.8 0.6

0.6 0.5
0.4
0.4 0.3

0.3 0.2
VCE(sat) @ IC/IB = 10
0.1
0.2 0
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages

f T, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)

400 10
300
7.0
200 TA = 25°C
C, CAPACITANCE (pF) 5.0 Cib

100 VCE = 10 V
80 TA = 25°C 3.0
Cob
60
2.0
40
30

20 1.0
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40
IC, COLLECTOR CURRENT (mAdc) VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Current−Gain — Bandwidth Product Figure 4. Capacitances

170
r b, BASE SPREADING RESISTANCE (OHMS)

160

150
VCE = 10 V
f = 1.0 kHz
140
TA = 25°C

130

120
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mAdc)

Figure 5. Base Spreading Resistance

http://onsemi.com
3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−92 (TO−226)
CASE 29−11
SCALE 1:1 ISSUE AM
DATE 09 MAR 2007

12 1
2
3 3
STRAIGHT LEAD BENT LEAD
BULK PACK TAPE & REEL
AMMO PACK

NOTES:
A B STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI
BULK PACK Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
P BEYOND DIMENSION K MINIMUM.
L
SEATING INCHES MILLIMETERS
PLANE K DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
X X D G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
G J 0.015 0.020 0.39 0.50
H J K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
V C N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
SECTION X−X R 0.115 --- 2.93 ---
1 N V 0.135 --- 3.43 ---

NOTES:
A B BENT LEAD
R 1. DIMENSIONING AND TOLERANCING PER
TAPE & REEL ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
AMMO PACK 3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
P AND BEYOND DIMENSION K MINIMUM.
T
MILLIMETERS
SEATING
PLANE K DIM MIN MAX
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
D 0.40 0.54
X X D G 2.40 2.80
J 0.39 0.50
G K 12.70 ---
J N 2.04 2.66
V P 1.50 4.00
C R 2.93 ---
V 3.43 ---
SECTION X−X
1 N

STYLES ON PAGE 2

DOCUMENT NUMBER: 98ASB42022B Electronic versions are uncontrolled except when

accessed directly from the Document Repository. Printed
STATUS: ON SEMICONDUCTOR STANDARD versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
NEW STANDARD:
© Semiconductor Components Industries, LLC, 2002 http://onsemi.com Case Outline Number:
October, DESCRIPTION:
2002 − Rev. 0 TO−92 (TO−226) 1 PAGE 1 OFXXX3
 TO−92 (TO−226)
CASE 29−11
ISSUE AM
DATE 09 MAR 2007

STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:

PIN 1. EMITTER PIN 1. BASE PIN 1. ANODE PIN 1. CATHODE PIN 1. DRAIN
2. BASE 2. EMITTER 2. ANODE 2. CATHODE 2. SOURCE
3. COLLECTOR 3. COLLECTOR 3. CATHODE 3. ANODE 3. GATE

STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10:

PIN 1. GATE PIN 1. SOURCE PIN 1. DRAIN PIN 1. BASE 1 PIN 1. CATHODE
2. SOURCE & SUBSTRATE 2. DRAIN 2. GATE 2. EMITTER 2. GATE
3. DRAIN 3. GATE 3. SOURCE & SUBSTRATE 3. BASE 2 3. ANODE

STYLE 11: STYLE 12: STYLE 13: STYLE 14: STYLE 15:
PIN 1. ANODE PIN 1. MAIN TERMINAL 1 PIN 1. ANODE 1 PIN 1. EMITTER PIN 1. ANODE 1
2. CATHODE & ANODE 2. GATE 2. GATE 2. COLLECTOR 2. CATHODE
3. CATHODE 3. MAIN TERMINAL 2 3. CATHODE 2 3. BASE 3. ANODE 2

STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:
PIN 1. ANODE PIN 1. COLLECTOR PIN 1. ANODE PIN 1. GATE PIN 1. NOT CONNECTED
2. GATE 2. BASE 2. CATHODE 2. ANODE 2. CATHODE
3. CATHODE 3. EMITTER 3. NOT CONNECTED 3. CATHODE 3. ANODE

STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25:
PIN 1. COLLECTOR PIN 1. SOURCE PIN 1. GATE PIN 1. EMITTER PIN 1. MT 1
2. EMITTER 2. GATE 2. SOURCE 2. COLLECTOR/ANODE 2. GATE
3. BASE 3. DRAIN 3. DRAIN 3. CATHODE 3. MT 2

STYLE 26: STYLE 27: STYLE 28: STYLE 29: STYLE 30:
PIN 1. VCC PIN 1. MT PIN 1. CATHODE PIN 1. NOT CONNECTED PIN 1. DRAIN
2. GROUND 2 2. SUBSTRATE 2. ANODE 2. ANODE 2. GATE
3. OUTPUT 3. MT 3. GATE 3. CATHODE 3. SOURCE

STYLE 31: STYLE 32: STYLE 33: STYLE 34: STYLE 35:
PIN 1. GATE PIN 1. BASE PIN 1. RETURN PIN 1. INPUT PIN 1. GATE
2. DRAIN 2. COLLECTOR 2. INPUT 2. GROUND 2. COLLECTOR
3. SOURCE 3. EMITTER 3. OUTPUT 3. LOGIC 3. EMITTER

DOCUMENT NUMBER: 98ASB42022B Electronic versions are uncontrolled except when

accessed directly from the Document Repository. Printed
STATUS: ON SEMICONDUCTOR STANDARD versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
NEW STANDARD:
© Semiconductor Components Industries, LLC, 2002 http://onsemi.com Case Outline Number:
October, DESCRIPTION:
2002 − Rev. 0 TO−92 (TO−226) 2 PAGE 2 OFXXX3
 DOCUMENT NUMBER:
98ASB42022B

PAGE 3 OF 3

ISSUE REVISION DATE

AM ADDED BENT−LEAD TAPE & REEL VERSION. REQ. BY J. SUPINA. 09 MAR 2007

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

© Semiconductor Components Industries, LLC, 2007 Case Outline Number:

March, 2007 − Rev. 11AM 29
 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT: TECHNICAL SUPPORT
Email Requests to: [email protected] North American Technical Support: Europe, Middle East and Africa Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910
ON Semiconductor Website: www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative

◊ www.onsemi.com
1