DC Motor Driver for Servo Driver Applications TLE 4209

1 Overview

1.1 Features
• Optimized for headlight beam control applications
• Delivers up to 0.8 A
• Low saturation voltage;
typ. 1.2 V total @ 25 °C; 0.4 A
• Output protected against short circuit
• Overtemperature protection with hysteresis
• Over- and undervoltage lockout
• No crossover current
• Internal clamp diodes

1.2 Description
The TLE 4209 is a fully protected H-Bridge Driver designed specifically for automotive
headlight beam control and industrial servo control applications.
The part is built using Infineons bipolar high voltage power technology DOPL.
The device is available in a P-DIP-8-4 package.
The servo-loop-parameter pos.- and neg. Hysteresis, pos.- and neg. deadband and
angle-amplification are programmable with external resitors.
An internal window-comparator controls the input line. In the case of a fault condition,
like short circuit to GND, short circuit to supply-voltage, and broken wire, the
TLE 4209 stops the motor immediately (brake condition).
Furthermore the built in features like over- and undervoltage-lockout, short-circuit-
protection and over-temperature-protection will open a wide range of automotive- and
industrial applications.

Type Package
TLE 4209 P-DIP-8-4

Data Sheet 1 2000-09-05

 TLE 4209

Overview

1.3 Pin Definitions and Functions

Pin No. Symbol Function

P-DIP-8-4
1 FB Feedback Input
2 HYST Hysteresis I/O
3 OUT1 Power Output 1
4 VS Power Supply Voltage
5 OUT2 Power Output 2
6 GND Ground
7 RANGE Range Input
8 REF Reference Input

P-DIP-8-4

Figure 1 Pin Configuration

(top view)

Data Sheet 2 2000-09-05

 TLE 4209

Overview

1.4 Functional Block Diagram

Figure 2 Block Diagram

Data Sheet 3 2000-09-05

 TLE 4209

Overview

1.5 Absolute Maximum Ratings

Parameter Symbol Limit Values Unit Remarks
min. max.

Voltages

Supply voltage VS – 0.3 45 V –

Supply voltage VS –1 – V t < 0.5 s; IS > – 2 A
Logic input voltages VI – 0.3 20 V –
(FB, REF, RANGE, HYST)

Currents

Output current (OUT1, OUT2) IOUT – – A internally limited

Output current (Diode) IOUT –1 1 A –
Input current IIN –2 2 mA
(FB, REF, RANGE, HYST) –6 6 mA t < 2 ms; t/T < 0.1

Temperatures

Junction temperature Tj – 40 150 °C –

Storage temperature Tstg – 50 150 °C –

Thermal Resistances

Junction ambient (P-DIP-8-4) RthjA 100 K/W –

Note: Stresses above those listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.

Data Sheet 4 2000-09-05

 TLE 4209

Overview

1.6 Operating Range

Parameter Symbol Limit Values Unit Remarks

min. max.
Supply voltage VS 8 18 V After VS rising
above VUV ON
Supply voltage increasing VS – 0.3 VUV ON V Outputs in tristate
Supply voltage decreasing VS – 0.3 VUV OF V Outputs in tristate
F
Output current IOUT1-2 – 0.8 0.8 A –
Input current (FB, REF) IIN – 50 500 µA –
Junction temperature Tj – 40 150 °C –

Note: In the operating range, the functions given in the circuit description are fulfilled.

1.7 Electrical Characteristics

8 V < VS < 18 V; IOUT1-2 = 0 A; – 40 °C < Tj < 150 °C (unless otherwise specified)
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.

Current Consumption

Supply current IS – 12 20 mA –
Supply current IS – 20 30 mA IOUT1 = 0.4 A
IOUT2 = – 0.4 A
Supply current IS – 30 50 mA IOUT1 = 0.8 A
IOUT2 = – 0.8 A

Over- and Under Voltage Lockout

UV Switch ON voltage VUV ON – 7.4 8 V VS increasing

UV Switch OFF voltage VUV OFF 6.3 6.9 – V VS decreasing
UV ON/OFF Hysteresis VUVHY – 0.5 – V VUV ON – VUV OFF
OV Switch OFF voltage VOV OFF – 20.5 23 V VS increasing
OV Switch ON voltage VOV ON 17.5 20 – V VS decreasing
OV ON/OFF Hysteresis VOVHY – 0.5 – V VOV OFF – VOV ON

Data Sheet 5 2000-09-05

 TLE 4209

Overview

1.7 Electrical Characteristics (cont’d)

8 V < VS < 18 V; IOUT1-2 = 0 A; – 40 °C < Tj < 150 °C (unless otherwise specified)
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.

Outputs OUT1-2

Saturation Voltages

Source (upper) VSAT U – 0.85 1.15 V Tj = 25 °C

IOUT = – 0.2 A
Source (upper) VSAT U – 0.90 1.20 V Tj = 25 °C
IOUT = – 0.4 A
Sink (upper) VSAT U – 1.10 1.50 V Tj = 25 °C
IOUT = – 0.8 A
Sink (lower) VSAT L – 0.15 0.23 V Tj = 25 °C
IOUT = 0.2 A
Sink (lower) VSAT L – 0.25 0.40 V Tj = 25 °C
IOUT = 0.4 A
Sink (lower) VSAT L – 0.45 0.75 V Tj = 25 °C
IOUT = 0.8 A

Total drop IOUT = 0.2 A VSAT – 1.0 1.4 V VSAT = VSAT U +

VSAT L
Total drop IOUT = 0.4 A VSAT – 1.2 1.7 V VSAT = VSAT U +
VSAT L
Total drop IOUT = 0.8 A VSAT – 1.6 2.5 V VSAT = VSAT U +
VSAT L

Clamp Diodes

Forward voltage; upper VFU – 1.0 1.5 V IF = 0.4 A

Upper leakage current ILKU – 5 mA IF = 0.4 A
Forward voltage; lower VFL – 0.9 1.4 V IF = 0.4 A

Data Sheet 6 2000-09-05

 TLE 4209

Overview

1.7 Electrical Characteristics (cont’d)

8 V < VS < 18 V; IOUT1-2 = 0 A; – 40 °C < Tj < 150 °C (unless otherwise specified)
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.

Input-Interface

Input REF

Quiescent voltage VREFq – 200 240 mV IREF = 0 µA

Input resistance RREF 4.5 6.0 7.5 kΩ 0 V < VREF < 0.5 V

Input FB

Quiescent voltage VFBq – 200 240 mV IFB = 0 µA

Input resistance RFB 4.5 6.0 7.5 kΩ 0 V < VFB < 0.5 V

Input/Output HYST

Current Offset IHYSTIO – 2 0.35 3 µA IREF = IFB =

250 250 µA
VHYST = VS / 2
IHYSTIO – 1.3 0 1.3 µA IREF = IFB =
40 40 µA
VHYST = VS / 2
Current Amplification AHYST 0.8 0.95 1.1 − – 20 µA < IHYST
AHYST = IHYST / (IREF – IFB) < – 10 µA;
10 µA < IHYST
< 20 µA;
IREF = 250 µA
VHYST = VS / 2
Current Gain GHYST 0.8 0.95 1.1 - IHYST = +/- 2 µA;
GHYST = (IHYST - IHYSTIO40) IREF = 40 µA;
/ (IREF – IFB) VHYST = VS / 2
Threshold voltage High VHYH / 51 52 54 % –
VS
Deadband voltage High VDBH / 50 50.4 51 % –
VS

Data Sheet 7 2000-09-05

 TLE 4209

Overview

1.7 Electrical Characteristics (cont’d)

8 V < VS < 18 V; IOUT1-2 = 0 A; – 40 °C < Tj < 150 °C (unless otherwise specified)
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Deadband voltage Low VDBL / 49 49.6 50 % –
VS
Threshold voltage Low VHYL / 46 48 49 % –
VS
Hysteresis Window VHYW / 3.0 4.0 5.0 % (VHYH – VHYL)/ VS
VS
Deadband Window VDBW / 0.4 0.8 1.2 % (VDBH – VDBL)/ VS
VS

Input RANGE

Input current IRANGE –1 – 1 µA 0 V < VRANGE

< VS
Switch-OFF voltage High VOFFH – 25 0 100 mV refer to VS
Switch-OFF voltage Low VOFFL 300 400 500 mV refer to GND

Thermal Shutdown

Thermal shutdown junction TjSD 150 175 200 °C –

temperature
Thermal switch-on junction TjSO 120 – 170 °C –
temperature
Temperature hysteresis ∆T – 30 K –

Note: The listed characteristics are ensured over the operating range of the integrated
circuit. Typical characteristics specify mean values expected over the production
spread. If not otherwise specified, typical characteristics apply at TA = 25 °C and
the given supply voltage.

Data Sheet 8 2000-09-05

 TLE 4209

Diagrams

2 Diagrams

Figure 3 Application Circuit

Data Sheet 9 2000-09-05

 TLE 4209

Diagrams

Figure 4 Hysteresis, Phaselag and Deadband-Definitions

Data Sheet 10 2000-09-05

 TLE 4209

Diagrams

Figure 5 Timing and Phase-Lag

Data Sheet 11 2000-09-05

 TLE 4209

Package Outlines

3 Package Outlines

P-DIP-8-4
(Plastic Dual In-line Package)

Sorts of Packing
Package outlines for tubes, trays etc. are contained in
our Data Book “Package Information”.
SMD = Surface Mounted Device Dimensions in mm

Data Sheet 12 2000-09-05

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