Errata

Radio Frequency Circuit Design

September 7, 2006

p. xiii Old At the end of the second to last paragraph

. . . simply a microwave text.
Revised
. . . simply a microwave text. Computer programs referred to in the body of the text may
be found at http://www-ee.uta.edu/online/adavis/rfsoftware.

p. 3 Old
. . . since their mechanical size normally correspondings to the wavelength.
Revised
. . . since their mechanical size normally corresponds to the wavelength.

p. 4 Old In second full paragraph

Clearly, the more distinct time intervals τ these are in the total time span T , . . .
Revised
Clearly, the more distinct time intervals τ there are in the total time span T , . . .
p. 5 Old
n · n · n · n . . . nT /τ (1.1)

Revised

n · n · n · n . . . = nT /τ (1.1)

p. 6 Old First paragraph in Section 1.3

. . . each interval that is independent from the others is nT /τ .
Revised
. . . each interval that is independent from the others is nT /τ .
p. 11
Revised
Table 2.1 Resistor Materials

1
 Resistor Type Resistance Temperature Coeff. Voltage Coeff.
Diffused Si 10 - 100 Ω/ 1500 ppm/◦ C 200 ppm/V
Diffused GaAs 300 to 400 Ω/ 3000 to 3200 ppm/◦ C —
Polysilcon 30 to 200 Ω/ 1500 ppm/◦ C 100 ppm/V
Ion Implantation 0.5 to 2 kΩ/ 400 ppm/◦ C 800 ppm/V
AuGeNi (Alloyed) 2 Ω/ — —
Thin film Cr 13 µΩ − cm 3000 ppm/◦ C —
Thin film Ti 55 to 135 µΩ − cm 2500 ppm/◦ C —
Thin film Ta 180 to 220 µΩ − cm -100 to +500 ppm/◦ C —
Thin film TaN 280 µΩ − cm -180 to -300 ppm/◦ C —
Thin film Ni 7 µΩ − cm — —
Thin film NiCr 60 to 600 µΩ − cm 200 ppm/◦ C —

Sources: Refs. [1-3].

p. 18. below (2.16)

Old
. . . and Cg is the static gap capacitance between the fingers.
Revised
. . . and Cg is the static gap capacitance per unit length between the fingers.
p. 20.
Old
R p R s + R p Ls
Z=
s2 LCR p + s(Rs CRp + L) + Rs Rp

Revised
Rp Rs + Rp Ls
Z=
s2 LCRp + s(Rs CRp + L) + Rs + Rp

p. 21.
Old Beginning of Section 2.4.1
The dc current flowing through a wire with a cross-sectional area, A, will encounter twice
the resistance if the area is doubled.
Revised The dc current flowing through a wire with a cross-sectional area, A, will
encounter half the resistance if the area is doubled.
p. 29.
Old
Cqi = Cm + Cf′ e + Cf′ (2.56)
Revised
Cqi = Cm + Cf + Cf′ (2.56)

p. 35.

2
 Old   √
1
 + jωC − jωL = 2

R (3.7)
 R
Revised   √
1 j = 2

 + jωC − (3.7)
R ωL  R

p. 35
Old

∆f = ω2 − ω1 (3.11)

Revised

∆ω = ω2 − ω1 (3.11)

p. 38
Old

jR2 + (ω0 L)2

jX1′ = (3.22)
ω0 L

Revised

R2 + (ω0 L)2
jX1′ = j (3.22)
ω0 L

p. 42 Old
Table 3.3 T matching circuit design formulas.

Step Number R′′ > R R′′ < R

1 Q1 = Qmax Q2 = Qmax
2 R′ = R(1 + Q21 ) R′ = R′′ (1 + Q22 )
3 1 + Q22 = R′ /R′′ 1 + Q21 = R′ /R
4 X 1 = Q1 R X 1 = Q1 R
5 B2 = (Q1 + Q2 )/R′ B2 = (Q1 + Q2 )/R′
6 X3 = Q2 /R′′ X3 = Q2 /R′′

p. 42 Revised
Table 3.3 T matching circuit design formulas.

3
 Step Number R′′ > R R′′ < R
1 Q1 = Qmax Q2 = Qmax
2 R′ = R(1 + Q21 ) R′ = R′′ (1 + Q22 )
3 1 + Q22 = R′ /R′′ 1 + Q21 = R′ /R
4 X 1 = Q1 R X 1 = Q1 R
5 B2 = (Q1 + Q2 )/R′ B2 = (Q1 + Q2 )/R′
6 X3 = Q2 R′′ X3 = Q2 R′′

p. 44

Old
 1/2
R2
Qp = (1 + Q21 ) − 1 (3.42)
R

Revised
 1/2
R2
Qp = (1 + Q21 ) − 1 (3.42)
R′

p. 45

Old Table 3.4 step number 7

C1 = Cseqv C2 /(Cseqv − C2 )

Revised

C1 = Cseqv C/(Cseqv − C)

p. 45

Old Table 3.4 step number 7

C1 = Cseqv C2 /(Cseqv − C2 )

Table 3.4 Tapped C Matching Circuit Design Formulas.

4
 Step Number Tapped C Formula
f
(1) Q1 = 0
∆f
Q1 1
(2) C= =
ω0 R ′ 2π∆f R′
(3) L = 21
ω0 C
 1/2
(4) Qp = R 2 2
(1 + Q1 ) − 1
R′
Qp
(5) C2 = ω R
0 2
C2 (1 + Q2p )
(6) Cseqv =
Q2p
Cseqv C2
(7) C1 =
Cseqv − C2

Revised
TABLE 3.4 Tapped C Matching Circuit Design Formulas.

Step Number Tapped C Formula

1 Q1 = f0 /∆f
2 C = Q1 /ω0 R′ = 1/2π∆f R′
3 L = 1/ω02 C
4 Qp = [(R2 /R′ )(1 + Q21 ) − 1]1/2
5 C2 = Qp /ω0 R2
6 Cseqv = C2 (1 + Q2p )/Q2p
7 C1 = Cseqv C/(Cseqv − C)

p. 48
Old
1 RG
+ωm2 L′2 + = |Q2−m2 | (3.59)
ωm2 C2′ 1 + Q22−m2
Revised
1 RG
+ωm2 L′2 − = |Q2−m2 | (3.59)
ωm2 C2′ 1 + Q22−m2
p. 49
Old

 
1
Bm1 = Im (3.61)
jωm1 L2 + (1/G′L + jωm1 C2′ )
′

5
  
1
Bm2 = Im (3.62)
jωm2 L2 + (1/G′L + jωm2 C2′ )
′

Revised
 
1
Bm1 = Im (3.61)
jωm1 L′2 + 1/(G′L + jωm1 C2′ )
 
1
Bm2 = Im (3.62)
jωm2 L′2 + 1/(G′L + jωm2 C2′ )

p. 49
Old
1
− ωm2 C1 = |Bm2 | (3.64)
ωm2 L11
Revised
1
− ωm2 C1 = −|Bm2 | (3.64)
ωm2 L11
p. 61
Old
1 h  z  z i
I(z, t) = F1 t − + F2 t + (4.50)
Z0 v v
Revised
1 h  z  z i
I(z, t) = F1 t − − F2 t + (4.50)
Z0 v v
p. 62
Old
V− ZL − Z0
Γ= +
= . (4.56)
V ZL + Z0∗

Revised
V− ZL − Z0∗
Γ= = . (4.56)
V+ ZL + Z0
p. 63
Old
ZL + jZ0 tanh γℓ
Zin = Z0 (4.63)
Z0 + jZL tanh γℓ
Revised
ZL + Z0 tanh γℓ
Zin = Z0 (4.63)
Z0 + ZL tanh γℓ
Problem 4.3 p. 82

6
 Old
. . . at the left-hand side of the 30 Ω line?
Revised
. . . at the left-hand side of the 30 Ω line at 1 GHz?
p. 87 - Sections 5.2.3 and 5.3.4
Old References to ωc1 and ωc2
Revised Should be changed to ω1 and ω2 respectively. In addition the reference to
ωc in Section 5.3.4 should be ω1 .
p. 88
Old
P (s) a0 + a1 s + a2 s2 + · · · + am−1 sm
H(s) = = (5.4)
Q(s) b0 + b1 s + b2 s2 + · · · + bn−1 sn
Revised
P (s) a0 + a1 s + a2 s2 + · · · + am sm
H(s) = = (5.4)
Q(s) b0 + b1 s + b2 s2 + · · · + bn sn
p. 88
Old polynomial m be equal to or less than the denominator polynomial n, m < n.
Revised polynomial m be equal to or less than the denominator polynomial n.
p. 91
Old Since Tn (x) < 1 in the pass band, . . .
Revised Since |Tn (x)| < 1 in the pass band, . . .
p. 91
Old h
−1/2 i
arccosh 1ǫ 10αmax /10 − 1
n= (5.23)
arccosh(ωs /ωc )
Revised h
1/2 i
1
arccosh ǫ
10αmin /10 − 1
n= (5.23)
arccosh(ωs /ωc )
p. 96
Old The dc transfer function is

|Γ(0)|2 = 1 − H0 (5.47)

Revised The dc reflection coefficient is

|Γ(0)|2 = 1 − H0 (5.47)

p. 97

7
 Old
H0
|H(ω)| = (5.52)
1 + ω6

Revised
H0
|H(ω)|2 = (5.52)
1 + ω6

p. 98
Old
2s3 + 3.687s2 + 3.423s + 1.599
Zin = 20 (5.57)
0s3 + 0.313s2 + 0.577s + 0.400s

Revised
2s3 + 3.687s2 + 3.423s + 1.599
Zin = 20 (5.57)
0s3 + 0.313s2 + 0.577s + 0.400

p. 98
Old
.361s
0.868s + 1.599 0.313s2 + 0.577s + 0.400
0.313s2 + 0.577s
0s2 + 0s + 0.868s + 0.400
Revised
.361s
0.868s + 1.599 0.313s2 + 0.577s + 0.400
0.313s2 + 0.577s
0s2 + 0s + 0.400
p. 99 RL → RG
Old
. . . to be changed from 1 to RL , then all inductors and resistors should should be multiplied
by RL , and all capacitors should be divided by RL .
Revised
. . . to be changed from 1 to RG , then all inductors and resistors should should be multiplied
by RG , and all capacitors should be divided by RG .
p. 99 (5.58) - (5.60)
Old

L = R L Lp (5.58)
Cp
C= (5.59)
RL
R = RL Rp (5.60)

8
 Revised

L = R G Lp (5.58)
Cp
C= (5.59)
RG
R = RG Rp (5.60)

p. 102 Fig. 5.10

Old In the Band pass column:
L
ω0 W
C
ω0 W
Revised In the Band pass column:

L
ω0 w
C
ω0 w

p. 113
Old

1 1 |Vg |2 (1 + cos θ)2 RL

Po = |I2 |2 RL = (6.15)
2 2 [2RG (1 + cos θ) + RL cos θ]2 + [(RG RL + Z02 /Z02 ]) sin2 θ

Revised

1 1 |Vg |2 (1 + cos θ)2 RL

Po = |I2 |2 RL = (6.15)
2 2 [2RG (1 + cos θ) + RL cos θ]2 + [(RG RL + Z02 ) /Z0 ]2 sin2 θ

p. 121 Problem 6.1

Old Determine the value of Rin in terms of Rout .
Revised Determine the value of Rin in terms of RL .
p. 130
Old

|S11 |2 − 1
(ΓL + m∗ )(Γ∗L + m) = |ΓL |2 + ΓL m + Γ∗L m∗ + |m|2 + (7.36)
|S22 |2 − |∆|2

Revised

9
 |S11 |2 − 1
(ΓL + m∗ )(Γ∗L + m) = |m|2 + (7.36)
|S22 |2 − |∆|2

p. 133
Old
Below (7.53). By subtracting |S12 S21 | inside the parenthesis . . .
Revised
By subtracting |S12 S21 |2 inside the parenthesis . . .
p. 138 After (7.79)
Old
. . . by setting bf b = b12a = −2.3092.
Revised
. . . by setting bf b = b12a = −2.3092 · 10−3 .
p. 141 Section 7.8
Old
However, eventually, the large the gate periphery . . . .
Revised
However, eventually, the large gate periphery . . . .
p. 200 Section 10.3
p. 179 Section 9.3 (9.35)
Old

iC (ωt) = IC − IˆC sin(ωt) −ψ ≤ ωt ≤ +ψ (9.35)
0 otherwise
Revised

iC (ωt) = IC − IˆC sin(ωt) 3π
2
− ψ ≤ ωt ≤ 3π
2
+ψ (9.35)
0 otherwise
p. 179 Section 9.3
Old
The point where quiescent current equals the total current is . . . .
Revised
The point where the total current = 0 is . . . .
p. 200 Section 10.3
Old
−1
y12f = (10.7)
sL
Revised

10
 −1
y12f = y21f = (10.7)
sL
p. 200 Section 10.3
Old
vo gm + y12f
= (10.8)
vgs (1/RD ) + y22f

Revised
vo gm + y21f
=− (10.8)
vgs (1/RD ) + y22f

p. 201 Section 10.3

Old
vo vo gm + y12f
a= = =− (10.9)
ii −vgs y11f y11f [(1/RD ) + y22f ]

Revised
vo vo gm + y21f
a= = = (10.9)
ii −vgs y11f y11f [(1/RD ) + y22f ]

p. 201 Section 10.3

Old
gm + y12f
1 = ay12f = (10.10)
y11f [(1/RD ) + y22f ]

Revised
gm + y21f
1 = ay12f = (10.10)
y11f [(1/RD ) + y22f ]

p. 212
Old

 dZ(ω) 2
 
dX 1 dA
0 =[R(ω) + Rd (A)] − [X(ω) + Xd (A)] + 
  (10.50)
dω dω  A dt
 dZ(ω) 2
 
dX dφ
0 =[X(ω) + Xd (A)] + [R(ω) + Rd (A)] + 
  (10.51)
dω dω  dt

Revised

11
  2
dX dR  dZ(ω)  1 dA
0 =[R(ω) + Rd (A)] − [X(ω) + Xd (A)] + (10.50)
dω dω  dω  A dt
 2
dX dR  dZ(ω)  dφ
0 =[X(ω) + Xd (A)] + [R(ω) + Rd (A)] + (10.51)
dω dω  dω  dt

p. 212
Old

dRd (A)
R(ω0 ) + Rd (A) =R(ω0 ) + Rd (A0 ) + δA
dA
dRd (A)
=δA (10.53)
dA
dXd (A)
X(ω0 ) + Xd (A) =δA (10.54)
dA

Revised

∂Rd (A)
R(ω0 ) + Rd (A) =R(ω0 ) + Rd (A0 ) + δA
∂A
∂Rd (A)
=δA (10.53)
∂A
∂Xd (A)
X(ω0 ) + Xd (A) =δA (10.54)
∂A

p. 213
Old

 2
dRd (A) dX(ω) dXd (A) dR(ω)  dZ(ω)  1 dδA
0 =δA − δA + (10.55)
dA dω dA dω dω  A0 dt

Revised

 2
∂Rd (A) dX(ω) ∂Xd (A) dR(ω)  dZ(ω)  1 dδA
0 =δA − δA + (10.55)
∂A dω ∂A dω dω  A0 dt

p. 213
Old

12
 ∆ ∂Rd (A) dX(ω) ∂Xd (A) dR(ω)
S= − >0 (10.57)
∂A dω ∂A dω

Revised

∆ ∂Rd (A) dX(ω) ∂Xd (A) dR(ω)

S= − (10.57)
∂A dω ∂A dω

p. 214
Old

∆ ∂Xd (φ) dX(ω) ∂Xd (φ) dR(ω)

S′ = + >0 (10.59)
∂φ dω ∂φ dω

Revised

∆ ∂Xd (φ) dX(ω) ∂Rd (φ) dR(ω)

S′ = + (10.59)
∂φ dω ∂φ dω

p. 214
Old
. . . Taylor series approximation for a change in phase.
Revised
. . . Taylor series approximation for a change in phase. The corresponding α′ = αA0 .
p. 222
Old

I(t) = Is eVDC /VT eVp cos ωp t · eV1 cos ω1 t

 
(11.2)

Revised
h i
I(t) = Is eVDC /VT eVp /VT cos ωp t · eV1 /VT cos ω1 t (11.2)

p. 223
Old

13
 " ∞
# " ∞
#
X X
I(t) = Is eVDC /VT I0 (Vp ) + 2 In (Vp ) cos nωp t · I0 (V1 ) + 2 In (V1 ) cos mω1 t
n=1 m=1
VDC /VT
= IDC e I0 (Vp )I0 (V1 )
∞ ∞
!
X X
+ 2IDC eVDC /VT I0 (V1 ) In (Vp ) cos nωp t + I0 (Vp ) Im (V1 ) cos mω1 t
n=1 m=1
" ∞
# " ∞
#
X X
+ 4IDC eVDC /VT In (Vp ) cos nωp t · Im (V1 ) cos mω1 t (11.4)
n=1 m=1

Revised

" ∞
# " ∞
#
X X
I(t) = Is eVDC /VT I0 (Vp /VT ) + 2 In (Vp /VT ) cos nωp t · I0 (V1 /VT ) + 2 In (V1 /VT ) cos mω1 t
n=1 m=1
VDC /VT
= IDC e I0 (Vp /VT )I0 (V1 /VT )
∞ ∞
!
X X
+ 2IDC eVDC /VT I0 (V1 /VT ) In (Vp /VT ) cos nωp t + I0 (Vp /VT ) Im (V1 /VT ) cos mω1 t
n=1 m=1
" ∞
# " ∞
#
X X
VDC /VT
+ 4IDC e In (Vp /VT ) cos nωp t · Im (V1 /VT ) cos mω1 t (11.4)
n=1 m=1

p. 225
Old

F (e−jωa ) = 2πδ(ω − ωa ) (11.11)

Revised

F (e−jfa ) = δ(f − fa ) (11.11)

p. 243
Old

1 GT (TG + Tn )
= ·
GT T
  G
Tn
= 1+ (11.35)
TG

Revised

14
 1 GT (TG + Tin )
= ·
GT T
  G
Tin
= 1+ (11.35)
TG

p. 244, three lines above (11.36)

Old
. . . then this will designated as NSSB .
Revised
. . . then this is designated as NSSB .
p. 246
Old
This illustrates the of-stated difference between . . .
Revised
This illustrates the oft-stated difference between . . .
p. 246, problem 11.1
Old
11.1 Using the Fourier Transform pair, show that F (e−jωt ) = 2πδ(ω − ω0 ).
Revised
11.1 Using the Fourier Transform pair, show that F (e−jωt ) = δ(ω − ω0 ).
p. 255
Old
Z ∞
1
f (t) = F (s)est dt, ℜs > 0 (12.13)
2πi ∞
Revised
γ+iβ
1
Z
f (t) = lim F (s)est dt, ℜs > 0 (12.13)
2πi β→∞ γ−iβ

p. 256
Old
t
dφ2 (t) Km Va Vb
Z
= ω0 + f (t − µ) cos ∆φ(µ) (12.14)
dt 2 0

Revised

t
dφ2 (t) Kvco Km Va Vb
Z
= ω0 + Kvc0 Vtune−0 + f (t − µ) cos ∆φ(µ)dµ (12.14)
dt 2 0

15
p. 256
Old
t
d∆φ ∆ dφ1 Km Va Vb
Z
= − ω0 − f (t − µ) cos ∆φ(µ)dµ (12.15)
dt dt 2 0

Revised

t
d∆φ ∆ dφ1 Kvco Km Va Vb
Z
= − ω0 − Kvco Vtune−0 − f (t − µ) cos ∆φ(µ)dµ (12.15)
dt dt 2 0

p. 256
Old
∆
ψ1 (t) = φ1 (t) − ω0 t (12.16)

∆
ψ2 (t) = φ2 (t) − ω0 t (12.17)

Revised
∆
ψ1 (t) = φ1 (t) − (ω0 + Kvco Vtune−0 )t (12.16)

∆
ψ2 (t) = φ2 (t) − (ω0 + Kvco Vtune−0 )t (12.17)

p. 256
Old
t
d∆φ dψ1 Km Va Vb
Z
= − f (t − µ) cos ∆φ(µ)dµ (12.18)
dt dt 2 0

Revised
t
d∆φ dψ1 Kvco Km Va Vb
Z
= − f (t − µ) cos ∆φ(µ)dµ (12.18)
dt dt 2 0

p. 256
Old
by a small amount, cos(∆φ + 90◦ ) ≈ ∆φ.
Revised
by a small amount, cos(∆φ − 90◦ ) ≈ ∆φ.
p. 256
Old

16
 Km Va Vb
K= (12.20)
2
Revised
Kvco Km Va Vb
K= (12.20)
2
p. 257 after (12.23)
Old
where G(s) = Va Vb Km /2F (s)/s.
Revised
where G(s) = KF (s)/s.
p. 258
Old
 
1 ω − ω0 φ0
∆φ̃(s) = + (12.28)
K/s s2 s
Revised
 
s ω − ω0 φ0
∆φ̃(s) = 2
+ (12.28)
s+K s s
p. 260
Old
4
Ve = = −50 mV (12.36)
−100
Revised
5
Ve = = −50 mV (12.36)
−100
p. 262 center of page
Old
. . . the VCO tuning voltage will now be 8 volts. With a gain of . . .
Revised
. . . the VCO tuning voltage will now be 8 volts. This is found from fref = Kvco ·
Vtune + f0 where Vtune0 = 5 gives f0 = 95 MHz. Thus when fref = 103 MHz, Vtune must
be 8 volts. With a gain of . . .
p. 262 next paragraph
Old
This represents an angular difference of ∆φ = arccos(Ve /0.5 · 1.0) = 99.7◦ in contrast
to 95.7◦ found earlier when the reference frequency was 100 MHz.

17
 Revised
This represents an angular difference of ∆φ = arccos(Ve /0.5 · 1.0) = 99.2◦ in contrast
to 95.7◦ found earlier when the reference frequency was 100 MHz.
p. 265 below (12.41)
Old

In either case, when the gain, G(s), is large, |H(s) ≈ N .

Revised

In (12.40) G(s) = Kpd Kvco F (s)/s, and for (12.41) G(s) = −Kpd Kvco F (s)/s. In either
case, when the gain, G(s), is large, |H(s) ≈ N .
p. 265
Old

For a type 1 PLL, Rp → ∞ and

Revised

For a type 2 PLL, Rp → ∞ and

p. 266
Old

Kpd Kvco (Rp + sCRs )Rp /Rin

C(Rp + Rs )
H(s) = −   (12.45)
1 K pd K vco R p R s Kpd Kvco Rp
s2 + s + NR +
C(Rp + Rs ) in Rp + Rs N Rin C(Rp + Rs )
Revised

Kpd Kvco (1 + sCRs )Rp /Rin /[C(Rp + Rs )]

H(s) =
{s2
+ s[1 + CRp Rs Kpd Kvco /(Rin N )]/[C(Rp + Rs )]
+ Kpd Kvco Rp /[Rin N C(Rp + Rs )]} (12.45)

p. 267
Old

 
1 2ζKpd Kvco Kpd KvcoFdc N
Rp = + −
Kpd Kvco C ωn N ωn2 Fdc
2
 
1 2ζKt K Fdc 1
= + t 2 − (12.55)
Kt C ωn N ωn Fdc

Revised

18
 K 2 Fdc
 
1 2ζKt C
Rp = + t2 + (12.55)
Kt C ωn ωn Fdc

p. 267 below (12.57)

Old
The –3 dB gain frequency for a damping of 1.0 is 2.4 Hz. If a – 3 dB frequency of 50 kHz
were required with a damping of 1.0, then a natural frequency of 20.833 kHz would be
chosen.
Revised

The – 3 dB frequency is found by setting |H(s)/H(0)|2 = 1/2 and solving for ω/ωn . It is
assumed in doing this that only the denominator terms are frequency dependent. The –3
dB gain frequency, f , for a damping of 1.0 is 0.6436 times the natural frequency. If a – 3
dB frequency of 50 kHz were required with a damping of 1.0, then a natural frequency of
77.889 kHz would be chosen.
p. 268
Old
Design equations can be developed for a noninverting loop filter like that shown in Fig.
12.5.
Revised
Design equations can be developed for a loop filter like that shown in Fig. 12.8b.
p. 268
Old

Rp ||(Rs + 1 )
F (s) = 1 + sC
Rin
 
Rp Rp Rs
1 + R + sC Rin + Rp + Rs
in
= (12.58)
1 + sC(Rp + Rs )

Revised

Rp ||[Rs + 1/(sC)]
F (s) = 1 +
Rin
1 + Rp /Rin + sC[Rp Rs /Rin + Rp + Rs ]
= (12.58)
1 + sC(Rp + Rs )

p. 268
Old
The closed loop gain is found by substituting Eq. (12.58) into Eq. (12.37) while making
use Eq. (12.50).

19
 Revised
The closed loop gain is found by substituting Eq. (12.58) into Eq. (12.37) while making
use of Eq. (12.43) and Eq. (12.50).
p. 268
Old

  
Rp Rp Rs
N Kt 1 + R + sC Rin + Rp + Rs
s
H(s) =    (12.59)
Rp Rp Rs
s [1 + sC(Rp + Rs )] + 1 + R + sC 1 + R + Rp + Rs Kt
in in
  
N Kt Rp Rp Rs
1 + R + sC Rin + Rp + Rs
C(Rp + Rs ) s
=   (12.60)
2 1 R p R s K t Rin + Rp Kt
s +s + + Kt + R + R C
C(Rp + Rs ) (Rp + Rs )Rin p s

Revised

N Kt [1 + Rp /Rs + sC (Rp Rs /Rin + Rp + Rs )]

H(s) =
{s [1 + sC(Rp + Rs )]
+ Kt [1 + Rp /Rin + sC (Rp Rs /Rin + Rp + Rs )]} (12.59)
N Kt /[C(Rp + Rs )][1 + Rp /Rin + sC(Rp Rs /Rin + Rs + Rp )]
= 2
{s + s{1/[C(Rp + Rs )] + CRp Rs Kt /[(Rp + Rs )Rin C] + Kt }
+ Kt (1 + Rp /Rin )/[C(Rp + Rs )]} (12.60)

p. 269 below (12.63)

Old
then substitution gives
Revised

then substitution Rs into (12.62) gives

p. 269
Old

0 = Rp2 (Kt2 − CKt Rin ωn2 )

2
+ Rp 2Kt Rin (Kt ζ − ωn ) + Rin (ωn2 + Kt2 − 2ζKt ωn ) (12.65)
so that if

20
 a =Kt2 − CKt Rin ωn2 (12.66)
b =2Kt Rin (Kt ζ − ωn ) (12.67)
2
c =Rin (ωn2 + Kt2 − 2ζKt ωn ) (12.68)
then √
−b + b2 − 4ac
Rp = . (12.69)
2a
Revised

0 = Rp2 (Kt2 − CKt Rin ωn2 )

2
+ Rp 2Kt Rin (Kt − ζωn ) + Rin (ωn2 − 2ζKt ωn ) (12.65)
so that if
a =Kt2 − CKt Rin ωn2 (12.66)
b =2Kt Rin (Kt − ζωn ) (12.67)
2
c =Rin (ωn2 − 2ζKt ωn ) (12.68)
then √
−b + b2 − 4ac
Rp = . (12.69)
2a
p. 293
Old
Table D.1 S-Parameter Conversion Chart.
S
(1 + S11 )(1 − S22 ) + S12 S21
A
2S21
(1 + S11 )(1 + S22 ) − S12 S21
B Z0 2S21
C 1 (1 − S11 )(1 − S22 ) − S12 S21
Z0 2S21
(1 − S11 )(1 + S22 ) − S12 S21
D 2S21
Revised

Table D.1 S-Parameter Conversion Chart.

S
(1 + S11 )(1 − S22 ) + S12 S21
A 2S21
(1 + S11 )(1 + S22 ) − S12 S21
B Z0 2S21
1 (1 − S11 )(1 − S22 ) − S12 S21
C Z0 2S21
(1 − S11 )(1 + S22 ) + S12 S21
D 2S21

21
p. 296 Appendix E
Old
. . . Zs , Zg , or Zd . The incident and scattered waves from the three-port . . .
Revised
. . . Zs , Zg , or Zd . For example, rs = a2 /b2 in Fig. E.1 or b2 = a2 /rs . This is substituted
in the appropriate place in the following equations. The incident and scattered waves from
the three-port . . .
p. 296 Appendix E
Old
When one of the ports is terminated with ri , then the circuit . . .
Revised
When one of the ports is terminated with Z0 , then the circuit . . .
p. 301 Appendix F
Old

kT
Thermal voltage VT = = 0.259 V
q

Revised

kT
Thermal voltage VT = = 0.0259 V
q

p. 302 - 303 Appendix F

Old Sign of VA should conform with Spice usage.

Junction Field Effect Transistor Parameters (JFET)

Description Formula
 2  
VGS VDS
Saturated drain current ID = IDSS 1 − 1−
VP VA
VDS ≥ VGS − VP
3 (ψ0 + VGS − VDS )3/2 − (ψ0 + VGS )3/2
 
Ohmic region drain current ID = Go VDS +
2 (ψ0 + VP )1/2
VDS < VGS − VP
2aW
G0 = σc
L
2
 
ID ≈ K 2(VGS − VP )VDS − VDS

22
  
2IDSS VGS
Transconductance gm = 1−
VP VP
VA
Output resistance ro =
ID
Cgs0
Gate source capacitance Cgs =  1/3
VGS
1 − ψ0
Cgd0
Gate drain capacitance Cgd =  1/3
VGD
1− ψ0
Cgss0
Gate substrate capacitance Cgss =  1/2
VGSS
1− ψ0

N Channel JFET VP < 0

P Channel JFET VP > 0

Metal Oxide Semiconductor Field Effect Transistor Parameters (MOSFET)

Description Formula
 
µCox W 2 VDS
Saturation region drain current ID = (VGS − Vt ) 1 −
2L VA
VDS ≥ VGS − Vt
 
µCox W  2
 VDS
Ohmic region drain current ID = 2(VGS − Vt )VDS − VDS 1 −
2L VA
VDS < VGS − Vt
ǫox
Oxide capacitance Cox =
tox
W
Transconductance gm = µCox (VGS − Vt )
L
|VA |
Output resistance ro =
ID0
Input capacitance Cin = CGS + CGD = Cox LW
gm µs (VGS − Vt )
Transition frequency fc = =
2πCin 2πL2
Surface mobility Holes µs = 200cm2 /(V − sec)
Surface mobility Electrons µs = 450cm2 /(V − sec)

Revised Sign of VA should conform with Spice usage.

Junction Field Effect Transistor Parameters (JFET)

23
Description Formula
 2  
VGS VDS
Saturated drain current ID = IDSS 1 − 1+ VA > 0
VP VA
VDS ≥ VGS − VP
3 (ψ0 + VGS − VDS )3/2 − (ψ0 + VGS )3/2
 
Ohmic region drain current ID = Go VDS +
2 (ψ0 + VP )1/2
VDS < VGS − VP
2aW
G0 = σc
L
2
 
ID ≈ K 2(VGS − VP )VDS − VDS
 
2IDSS VGS
Transconductance gm = 1−
VP VP
VA
Output resistance ro =
ID
Cgs0
Gate source capacitance Cgs =  1/3
1 − VψGS
0

Cgd0
Gate drain capacitance Cgd =  1/3
VGD
1− ψ0
Cgss0
Gate substrate capacitance Cgss =  1/2
VGSS
1− ψ0
N Channel JFET VP < 0
P Channel JFET VP > 0

Metal Oxide Semiconductor Field Effect Transistor Parameters (MOSFET)

Description Formula
 
µCox W 2 VDS
Saturation region drain current ID = (VGS − Vt ) 1 + VA > 0
2L VA
VDS ≥ VGS − Vt
 
µCox W  2
 VDS
Ohmic region drain current ID = 2(VGS − Vt )VDS − VDS 1 +
2L VA
VDS < VGS − Vt
ǫox
Oxide capacitance Cox =
tox
W
Transconductance gm = µCox (VGS − Vt )
L
24
 |VA |
Output resistance ro =
ID0
Input capacitance Cin = CGS + CGD = Cox LW
gm µs (VGS − Vt )
Transition frequency fc = =
2πCin 2πL2
Surface mobility Holes µs = 200cm2 /(V − sec)
Surface mobility Electrons µs = 450cm2 /(V − sec)

p. 304 Appendix F
Old
The word “Common” misspelled and some equations revised.
Revised

25
 Small Signal Single–Transistor Amplifier Configurations

MOSFET BJT

Common Source Common Emitter

Rin = RB = R1 ||R2 Rin = (rπ + rb )||RB ≈ rπ
Rout = RD ||r0 Rout = Rc ||r0
AV = −gm (r0 ||RD ||RL ) ∝ √1 AV = −gm (Rc ||r0 ||RL )
ID

Source Degeneration Emitter Degeneration

Rin = RB = R1 ||R2 Rin = rπ + rb + (β + 1)RE

≈ rπ (1 + gm RE )
Rout = r0 [1 + (gm + gmb )RS ] + RS Rout = RC || {RE ||rπ + r0 [1 + gm (rπ ||RE )]}
≈ r0 (1 + gm RE )
gm gm
Gm = Gm =
1 + (gm + gmb )RS + RS /ro 1 + gm RE (1 + 1/β)

Common Gate Common Base

r0 + RD ||RL r0 + RC ||RL
Rin = Rin = gm
1 + (gm + gmb )r0 1+ [R ||R + (β0 + 1)r0 ]
β0 C L
RD ||RL α0 α0 RC ||RL
≈ g +1 g + ≈ +
m mb (gm + gmb )r0 gm g m r0
 
r0 + Rgen (1 + r0 gm /α0 )
Rout = RD || [r0 + RS + RS ro (gm + gmb )] Rout = RC ||
1 + Rgen /rπ
 
1
Gm = gm + gmb Gm = gm ≈ gm
1 + rb /rπ
AV = gm (RC ||RL )
gm RC Rgen
AI = ≈ g m re = α 0
RC + RL 1 + gm Rgen

Common Drain (Source Follower) Common Collector (Emitter Follower)

Rin = R1 ||R2 Rin = rπ + rb + (β + 1)(r0 ||RE )
r0 rπ + Rgen + rb 1 Rgen + rb
Rout = ≈ g +1 g Rout = ≈ +
1 + r0 (gm + gmb ) m mb 1+β gm 1+β
g m r0 1
AV = AV = ≈1
1 + r0 (gm + gmb ) + r0 /RL Rgen + rb + rπ
1+
(RE ||r0 )(β + 1)
≈ 1 ≈1
1 + gmb /gm

26
p. 314-315
Old

Analysis of a circuit for S11 and S21

*
* R01 and R02 are input and output resistance levels.
* RL is the load resistance. The load may be supplemented
* with additional elements.
.PARAM R01=50, R02=50. RLOAD=50. IIN=-1/R01
.FUNC N(R01,R02) SQRT(R02/R01)
R01 1 0 R01
VIN 10 11 AC 1
GI1 1 0 VALUE=-V(10,11)/R01
*GI1 1 0 10 11 "-1/R01"
E11 10 0 1 0 2
R11 11 0 1
Xcircuit 1 2 netname
RL 2 0 RLOAD
E21 21 0 VALUE=V(2)*2/N(R01,R02)
* n = SQRT(R02/R01)
*E21 21 0 2 0 "2/n"
R21 21 0 1
*
.SUBCKT netname "first node" "last node"
* Input side
* .
* .
* .
* Output side
.ENDS netname
* Code for S11 and S21
*.AC DEC "num" "f1" "f2"
.PROBE V(11) V(21)
.END
Revised

Include {. . .}
Analysis of a circuit for S11 and S21
*
* R01 and R02 are input and output resistance levels.
* RL is the load resistance. The load may be supplemented
* with additional elements.
.PARAM R01=50, R02=50. RLOAD=50. IIN={-1/R01}

27
.FUNC N(R01,R02) {SQRT(R02/R01)}
R01 1 0 {R01}
VIN 10 11 AC 1
GI1 1 0 VALUE={-V(10,11)/R01}
*GI1 1 0 10 11 "-1/R01"
E11 10 0 1 0 2
R11 11 0 1
Xcircuit 1 2 netname
RL 2 0 {RLOAD}
E21 21 0 VALUE={V(2)*2/N(R01,R02)}
* n = SQRT(R02/R01)
*E21 21 0 2 0 "2/n"
R21 21 0 1
*
.SUBCKT netname "first node" "last node"
* Input side
* .
* .
* .
* Output side
.ENDS netname
* Code for S11 and S21
*.AC DEC "num" "f1" "f2"
.PROBE V(11) V(21)
.END

28